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    • 11. 发明授权
    • Veneer reeling unit
    • 单板卷取单元
    • US4442982A
    • 1984-04-17
    • US327488
    • 1981-12-04
    • Yasuhiko Iwamoto
    • Yasuhiko Iwamoto
    • B65H18/00B27D1/00B27L5/02B65H16/10B65H29/00B65H17/08B65H75/02
    • B65H29/006B65H2301/4191
    • A veneer reeling unit in a device for reeling veneer is provided. The unit comprises a rotatable reeling roll disposed in parallel to the grain of veneer sheet to be wound thereon, thread storage member which contains a winding of thread of a required length for supplying said thread during reeling operation and re-collecting said thread after said operation, and thread guiding member which is adapted to guide said thread supplied from the said storage member so that the thread may be wound together with the veneer round the periphery of said reeling roll in such a way that the former may guide and support the latter. The use of this unit in reeling device can make possible smooth reeling of veneer sheets of various shapes and widths.
    • 提供了一种用于卷取胶合板的设备中的单板卷取单元。 该单元包括与要卷绕在其上的单板片平行设置的可旋转的卷取辊,螺纹存储部件,其包含在卷取操作期间供应所述螺纹所需长度的线的卷绕,并且在所述操作之后重新收集所述螺纹 以及引导构件,其适于引导从所述存储构件供应的所述螺纹,使得所述螺纹可以以所述单板缠绕在所述卷取辊的周边上,使得所述螺纹可以引导和支撑所述螺纹。 在卷取装置中使用该单元可以使各种形状和宽度的单板的平滑卷取成为可能。
    • 13. 发明授权
    • Image processing device, method, system and the associated program for generating a composite image
    • 图像处理装置,方法,系统和用于生成合成图像的相关程序
    • US08599457B2
    • 2013-12-03
    • US12394552
    • 2009-02-27
    • Yasuhiko Iwamoto
    • Yasuhiko Iwamoto
    • H04N1/46G06K9/00H04N7/167
    • H04N1/32352H04N1/32208H04N1/32229H04N1/32336
    • An image processing device, which includes: an original reception unit that receives an original image; a dot image generation unit that generates, on the basis of additive information to be added to the original image, a dot image in which a plurality of dots each formed by one or more pixels are arranged; a state alteration unit that, when any of the dots in the dot image is determined to be not extractable, alters a state of the non-extractable dot on the basis of a relationship between a position on the dot image generated by the dot image generation unit and a corresponding position on the original image; and a composite image generation unit that generates a composite image by superimposing, on the original image, the dot image having the state of the non-extractable dot altered by the state alteration unit.
    • 一种图像处理装置,包括:接收原始图像的原始接收单元; 一个点图像生成单元,其基于要添加到原始图像的添加信息生成其中排列有由一个或多个像素形成的多个点的点图像; 状态改变单元,当所述点图像中的任何点被确定为不可抽出时,基于由所述点图像生成产生的点图像上的位置之间的关系来改变所述不可提取点的状态 单位和原始图像上的相应位置; 以及合成图像生成单元,其通过在原始图像上叠加具有由状态改变单元改变的不可提取点的状态的点图像来生成合成图像。
    • 16. 发明授权
    • Method for manufacturing a BiCMOS semiconductor device
    • BiCMOS半导体器件的制造方法
    • US6100124A
    • 2000-08-08
    • US132661
    • 1998-08-12
    • Yasuhiko Iwamoto
    • Yasuhiko Iwamoto
    • H01L27/06H01L21/8249H01L21/8238
    • H01L21/8249
    • In a method for manufacturing a BiCMOS semiconductor device including bipolar transistors and MOS transistors, a thin gate oxide film is formed on a principal surface of a semiconductor substrate, and a first polysilicon film is formed on the thin gate oxide film. This first polysilicon film is selectively removed from a bipolar transistor formation area, and impurities are introduced into a principal surface region of a semiconductor substrate through only the thin gate oxide film so that a collector region is formed in the semiconductor substrate in the bipolar transistor formation area, and a base region is formed in the collector region, Therefore, a second polysilicon film is formed on the whole surface, and the second polysilicon film and the underlying thin gate oxide film are removed from an emitter formation area within the base region. A third polysilicon film having a high impurity concentration is formed on the whole surface, and thereafter, the polysilicon layers are patterned to form a gate composed of the first, second and third polysilicon films, and an emitter composed of the second and third polysilicon films. The impurity included in the third polysilicon is thermally diffused in the base region so that an emitter region is formed in the base region. Thus, without increasing the number of masks, and without giving an adverse influence to the MOS transistor, the performance of the bipolar transistor can be elevated, and the stable yield of production can be realized. In addition, the microminiaturization of the bipolar transistor becomes possible
    • 在制造包括双极晶体管和MOS晶体管的BiCMOS半导体器件的方法中,在半导体衬底的主表面上形成薄栅氧化膜,并且在薄栅氧化膜上形成第一多晶硅膜。 该第一多晶硅膜从双极晶体管形成区选择性地去除,并且杂质仅通过薄栅氧化膜被引入到半导体衬底的主表面区域,从而在双极晶体管形成中在半导体衬底中形成集电极区 区域,并且在集电区域形成基极区域。因此,在整个表面上形成第二多晶硅膜,并且从基极区域内的发射极形成区域去除第二多晶硅膜和下面的薄栅氧化膜。 在整个表面上形成具有高杂质浓度的第三多晶硅膜,然后对多晶硅层进行构图以形成由第一,第二和第三多晶硅膜构成的栅极,以及由第二和第三多晶硅膜 。 包含在第三多晶硅中的杂质在基极区域中热扩散,使得在基极区域中形成发射极区域。 因此,在不增加掩模数量的情况下,并且不会对MOS晶体管产生不利影响,可以提高双极晶体管的性能,并且可以实现稳定的产量。 此外,双极晶体管的微小化变得可能