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11. 发明授权

US08343454B2 Spherical assembly particle composition of cuprous oxide and preparation method thereof 有权
标题翻译：氧化亚铜的球形组装颗粒组成及其制备方法
公开(公告)号：US08343454B2
公开(公告)日：2013-01-01
申请号：US12452794
申请日：2008-06-25
申请人： Woo-Ram Lee , Sang-Ho Kim , Sung-Ho Yoon
发明人： Woo-Ram Lee , Sang-Ho Kim , Sung-Ho Yoon
IPC分类号： C01G3/00
CPC分类号： C01G3/02 , B01J23/72 , B01J35/0013 , B01J35/08 , B01J37/16 , B82Y30/00 , C01P2002/72 , C01P2004/03 , C01P2004/04 , C01P2004/32 , C01P2004/50 , C01P2004/52 , C01P2004/61 , C01P2004/62 , H01L31/0328 , H01L31/035281 , Y02E10/50 , Y10T428/2991 , Y10T428/2998
摘要： A Cu2O spherical assembly particle composition is composed of Cu2O spherical assembly particles, each of which is formed by agglomerating a plurality of Cu2O ultrafine particles that have an average diameter in the range from 1 to 100 nm and a standard deviation on the diameter in the range from 0 to 10%. The Cu2O spherical assembly particles have an average diameter in the range from 0.1 to 10 μm and a standard deviation on the diameter in the range from 0 to 40%. This Cu2O spherical assembly particle composition is composed of Cu2O assembly particles with excellent uniformity, so it shows excellent properties such as realizing a good electric conductivity during a curing process for wiring. Accordingly, the spherical Cu2O assembly particle composition may be usefully used as precursors for solar energy conversion, magnetic storage medium, catalyst, gas sensor, and copper wire formation.
摘要翻译： Cu2O球形组件颗粒组合物由Cu2O球形组件颗粒组成，每个颗粒通过使平均直径在1至100nm范围内的多个Cu 2 O超细颗粒聚集而形成，并且在该范围内的直径的标准偏差从0到10％。 Cu2O球形组件颗粒的平均直径在0.1至10μm的范围内，直径的标准偏差在0至40％的范围内。该Cu 2 O球形组合物颗粒组合物由均匀性良好的Cu 2 O组合颗粒组成，因此在布线固化过程中实现良好的导电性。因此，球形Cu 2 O组合粒子组合物可以有用地用作太阳能转换，磁存储介质，催化剂，气体传感器和铜线形成的前体。

12. 发明授权

US06881467B2 Vacuum insulator using glass white wool and its fabrication method 失效
标题翻译：玻璃白羊毛真空绝缘子及其制作方法
公开(公告)号：US06881467B2
公开(公告)日：2005-04-19
申请号：US10030528
申请日：2001-03-16
申请人： Hyung-Jin Jung , Goo-Dae Kim , No-Kyung Park , Yong-Gyu Shin , Sung-Ho Yoon , Sung-Kyu Lee
发明人： Hyung-Jin Jung , Goo-Dae Kim , No-Kyung Park , Yong-Gyu Shin , Sung-Ho Yoon , Sung-Kyu Lee
IPC分类号： F16L59/06 , B32B1/06 , B32B27/12 , C04B30/02 , D04H13/00 , E04B1/80 , F16L59/065 , B32B1/04 , B32B3/02
CPC分类号： C03C13/06 , B32B1/06 , B32B27/12 , C04B30/02 , C04B2111/00612 , D04H1/4218 , D04H1/559 , D04H13/00 , E04B1/803 , F16L59/065 , Y02A30/242 , Y02B80/12 , Y10T428/231 , Y10T428/239 , C04B14/42 , C04B40/0071 , C04B40/0082 , C04B40/0089
摘要： The vacuum insulator in accordance with the present invention comprises glass white wool body which density is 0.1˜0.5 g/cm3 in density and is below 0.0023 kcal/mh° C. in thermal conductivity, and a non permeable container surrounding the body in which the pressure is between 10−6 ˜10−1 torr. The vacuum insulator is fabricated by piling up glass white wool, thermal-pressutizing the piled glass white wool to form a body of 0.1˜0.5 g/cm3 in density wherein the pressurizing is done at 0.007˜1.5 kg/cm2 and under 20° C. for more than 10 minutes, putting the body in the non-permeable container, and producing a vacuum in the container.
摘要翻译：根据本发明的真空绝热体包括密度为0.1〜0.5g / cm 3，密度低于0.0023kcal / m·h的玻璃白色羊毛体，导热系数为围绕身体的可渗透容器，其中压力在10 -6 -6托之间。真空绝缘子通过堆积玻璃白色羊毛制成，对堆积的玻璃白色羊毛进行热压，形成密度为0.1〜0.5g / cm 3的体，其中加压在0.007〜1.5 kg / cm 2，20℃以下10分钟以上，将本体置于不可渗透容器中，并在容器内产生真空。

13. 发明授权

US06642123B2 Method of fabricating a silicon wafer including steps of different temperature ramp-up rates and cool-down rates 有权
标题翻译：制造硅晶片的方法包括不同温度升温速率和冷却速率的步骤
公开(公告)号：US06642123B2
公开(公告)日：2003-11-04
申请号：US10156180
申请日：2002-05-29
申请人： Young-Hee Mun , Gun Kim , Sung-Ho Yoon
发明人： Young-Hee Mun , Gun Kim , Sung-Ho Yoon
IPC分类号： H01L2176
CPC分类号： C30B33/00 , C30B29/06 , H01L21/3225
摘要： A method of fabricating a silicon wafer, which includes the steps of preparing a silicon wafer by slicing, grinding, and cleaning an ingot, inserting the silicon wafer in a diffusion furnace having an ambience of one of Ar, N2 and inert gas including Ar and N2, pre-heating and maintaining the diffusion furnace at about 500° C., changing the ambience into one of H2, Ar and inert gas including H2 and Ar successively, increasing a temperature of the diffusion furnace by a temperature-increasing speed of 50˜70° C./min between 500˜800° C., 10˜50° C./min between 800˜900° C., 0.5˜10° C./min between 900˜1000° C., and 0.1˜0.5° C./min between 1000˜1250° C., maintaining the diffusion furnace at 1200˜1250° C. for 1˜120 min, changing the ambience inside the diffusion furnace into one of Ar, N2 and inert gas ambience including Ar and N2 successively, and decreasing the temperature of the diffusion furnace down to 500 ° C. by a temperature-decreasing speed of 0.1˜0.5° C./min between 1000˜1250° C., 0.5˜10° C./min between 900˜1000° C., 10˜50° C./min between 800˜900° C., and 50˜70° C./min between 500˜800° C.
摘要翻译：一种制造硅晶片的方法，包括以下步骤：通过切片，研磨和清洁锭来制备硅晶片，将硅晶片插入具有Ar，N2和包括Ar的惰性气体之一的扩散炉中， N2，将扩散炉预热并维持在约500℃，连续地将气氛改变为包括H 2和Ar的H 2，Ar和惰性气体中的一种，将扩散炉的温度升高50℃ 在500〜800℃之间为〜70℃/分钟，800〜900℃之间为10〜50℃/分钟，900〜1000℃为0.5〜10℃/分钟，在1000〜1250℃之间为0.5℃/分钟，将扩散炉保持在1200〜1250℃1〜120分钟，将扩散炉内的氛围改变为Ar，N2和惰性气体环境中的一种，包括Ar N2连续下降，扩散炉温度降至500℃，降温速度为0.1〜0.5℃/ min，1000〜在900〜1000℃之间为0.5〜10℃/分钟，800〜900℃为10〜50℃/分钟，500〜800℃为50〜70℃/分钟 C。

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