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11. 发明授权

US5545912A Electronic device enclosure including a conductive cap and substrate 失效
标题翻译：电子设备外壳包括导电盖和基板
公开(公告)号：US5545912A
公开(公告)日：1996-08-13
申请号：US329927
申请日：1994-10-27
申请人： Ljubisa Ristic , Daniel N. Koury , John E. Schmiesing , Ronald J. Gutteridge , Henry G. Hughes
发明人： Ljubisa Ristic , Daniel N. Koury , John E. Schmiesing , Ronald J. Gutteridge , Henry G. Hughes
IPC分类号： G01D5/24 , G01P1/02 , G01P15/08 , G01P15/125 , H01L23/06 , H01L23/14
CPC分类号： G01P1/023 , G01P15/125 , H01L2224/48095 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025
摘要： An enclosure (8) for an electronic device (26) such as, for example, an accelerometer. The enclosure (8) includes a conductive semiconductor substrate (12) underlying the electronic device (26), a conductive cap (16) overlying the electronic device (26), and a power supply (25) having one or more outputs (27, 29) each with a substantially fixed potential wherein one output is electrically coupled to the conductive semiconductor substrate (12) and another output to the conductive cap (16). In a preferred embodiment, substrate ( 12 ) and cap (16) are coupled to the same power supply output (27). This coupling substantially eliminates the adverse effects of parasitic capacitances of the substrate (12) and cap (16) to reduce measurement error and EMI when a capacitive accelerometer is used as the electronic device (26).
摘要翻译：一种用于电子设备（26）的外壳（8），例如加速度计。所述外壳（8）包括位于所述电子设备（26）下方的导电半导体衬底（12），覆盖所述电子设备（26）的导电帽（16）和具有一个或多个输出（27）的电源（25） 29），每个具有基本上固定的电位，其中一个输出电耦合到导电半导体衬底（12），另一个输出与导电帽（16）电连接。在优选实施例中，衬底（12）和帽（16）耦合到相同的电源输出（27）。该耦合基本上消除了当使用电容加速度计作为电子器件（26）时，衬底（12）和帽（16）的寄生电容的不利影响，以减小测量误差和EMI。

12. 发明授权

US5550090A Method for fabricating a monolithic semiconductor device with integrated surface micromachined structures 失效
标题翻译：用于制造具有集成表面微加工结构的单片半导体器件的方法
公开(公告)号：US5550090A
公开(公告)日：1996-08-27
申请号：US523581
申请日：1995-09-05
申请人： Ljubisa Ristic , Frank A. Shemansky, Jr.
发明人： Ljubisa Ristic , Frank A. Shemansky, Jr.
IPC分类号： G01L9/04 , G01L9/00 , G01P15/08 , G01P15/125 , H01L21/822 , H01L29/84 , H01L21/461 , H01L21/4757
CPC分类号： H01L21/822 , G01P15/0802 , G01P15/125
摘要： A method for fabricating a monolithic semiconductor device with integrated surface micromachined structures is provided. A semiconductor substrate (10) has an interconnection layer (14) and a first sacrificial layer (16) overlying the substrate (10). Sensor areas (30) and IC areas (40) are formed by patterning the first sacrificial layer (16). A patterned sensor structural layer (32) is formed within sensor area (30) and protected by second sacrificial layer (34) and seal layer (36) while IC elements are formed in IC area (40). Subsequent to IC processing a RTA anneal is performed to relieve stress in sensor layer (32). Sensor area (30) is electrically coupled to IC area (40) and sacrificial layers (16, 34) removed to free sensor elements in sensor areas (40).
摘要翻译：提供了一种用于制造具有集成表面微加工结构的单片半导体器件的方法。半导体衬底（10）具有互连层（14）和覆盖衬底（10）的第一牺牲层（16）。通过图案化第一牺牲层（16）形成传感器区域（30）和IC区域（40）。图案化传感器结构层（32）形成在传感器区域（30）内并由第二牺牲层（34）和密封层（36）保护，而IC元件形成在IC区域（40）中。在IC处理之后，执行RTA退火以减轻传感器层（32）中的应力。传感器区域（30）电耦合到IC区域（40），去除牺牲层（16,34）以便在传感器区域（40）中释放传感器元件。

13. 发明授权

US5393678A Method for making collector arrangement for magnetotransistor 失效
标题翻译：磁电晶体管集电极配置方法
公开(公告)号：US5393678A
公开(公告)日：1995-02-28
申请号：US227745
申请日：1994-05-18
申请人： Ljubisa Ristic
发明人： Ljubisa Ristic
IPC分类号： H01L21/822 , G01R33/06 , H01L21/331 , H01L27/04 , H01L29/06 , H01L29/73 , H01L29/732 , H01L29/82 , H01L43/02 , H01L21/265
CPC分类号： H01L29/82 , G01R33/0088 , G01R33/06 , G01R33/066
摘要： A collector arrangement for a magnetotransistor (10, 25, 30) and a method for making the magnetotransistor (10, 25, 30). A portion of a semiconductor substrate (11) is doped to form a base region (13). The base region is doped to form an emitter region (16, 26, 36) and a collector region (17, 27, 37) such that the collector region (17, 27, 37) surrounds and is spaced apart from the emitter region (16, 26, 36). Collector contacts (C.sub.1 -C.sub.8 and C.sub.5 '-C.sub.8 ', C.sub.13 -C.sub.16) are symmetrically formed in the collector region (17, 27, 37). In a three-dimensional magnetotransistor (10, 25) the collector contacts include split-collector contacts (C.sub.5 -C.sub.8 and C.sub.5 '-C.sub.8 ').
摘要翻译：一种用于磁电晶体管（10,25,30）的集电器装置和用于制造磁电晶体管（10,25,30）的方法。半导体衬底（11）的一部分被掺杂以形成基极区域（13）。掺杂基极区域以形成发射极区域（16,26,36）和集电极区域（17,27,37），使得集电极区域（17,27,37）包围发射极区域（17,27,37）并且与发射极区域 16,26,36）。在集电极区域（17,27,37）中对称地形成集电极触点（C1-C8和C5'-C8'，C13-C16）。在三维磁电晶体管（10,25）中，集电极触点包括分集集电极触点（C5-C8和C5'-C8'）。

14. 发明授权

US5337606A Laterally sensitive accelerometer and method for making 失效
标题翻译：侧向敏感的加速度计和制造方法
公开(公告)号：US5337606A
公开(公告)日：1994-08-16
申请号：US926616
申请日：1992-08-10
申请人： Paul T. Bennett , Ronald J. Gutteridge , Daniel N. Koury, Jr. , David F. Mietus , Ljubisa Ristic
发明人： Paul T. Bennett , Ronald J. Gutteridge , Daniel N. Koury, Jr. , David F. Mietus , Ljubisa Ristic
IPC分类号： G01P15/08 , G01P15/125 , H01L29/84 , H01G7/00
CPC分类号： G01P15/125 , G01P15/0802 , Y10T29/43
摘要： A micromachined capacitor structure having a first anchor (12) attached to the substrate (24), a tether (13) coupled to the anchor (12) and having a portion free to move in a lateral direction over the substrate (24) in response to acceleration. A tie-bar (14) is coupled to the movable portion of the tether (13), and at least one movable capacitor plate (16) is coupled to the tie bar (13). A first fixed capacitor plate (16) is attached to the substrate (24) laterally overlapping and vertically spaced from the at least one movable capacitor plate (16).
摘要翻译：一种微加工电容器结构，其具有附接到所述基板（24）的第一锚固件（12），联接到所述锚固件（12）的系绳（13），并且具有在所述基板（24）上沿横向移动的部分，以响应加速。连杆（14）联接到系绳（13）的可移动部分，并且至少一个可移动电容器板（16）联接到连接杆（13）。第一固定电容器板（16）与至少一个可移动电容器板（16）横向重叠并垂直间隔地安装到基板（24）。

15. 发明授权

US4999692A Semiconductor magnetic field sensor 失效
标题翻译：半导体磁场传感器
公开(公告)号：US4999692A
公开(公告)日：1991-03-12
申请号：US192770
申请日：1988-05-11
申请人： Ljubisa Ristic , Heinrich P. Baltes , Thomas Smy
发明人： Ljubisa Ristic , Heinrich P. Baltes , Thomas Smy
IPC分类号： G01R33/06 , H01L27/22 , H01L29/82
CPC分类号： H01L29/82 , G01R33/06
摘要： A semiconductor magnetic field sensor has a base region, an emitter which injects minority carriers into the base region along an injection axis, and a collector intersected by the injection axis which collects minority carrier flows. An additional pair of collectors are laterally spaced from the emitter and the injection axis to receive lateral current components arising in the base region from the injected minority carriers. Magnetic fields applied to the base cause a redistribution of the minority carriers between the lateral current components and the strength of the magnetic field can be measured by comparing the magnitudes of the resulting collector currents. Base strips on laterally opposing sides of the emitter form junctions that suppress parasitic lateral injection. Reverse biasing the junctions focuses the injected minority carriers to a greater degree along the injection axis thereby markedly enhancing device sensitivity. Different biasing voltages can be applied to the junctions to shift the injection axis laterally thereby compensating for offsets in the quiescent currents in the two collectors. Base strips spaced outwardly and laterally relative to the pair of collectors permit the quiescent collector currents to be adjusted independent of the biasing voltages applied to the junctions.
摘要翻译：半导体磁场传感器具有基极区域，沿着注入轴将少数载流子注入基极区域的发射极和与收集少数载流子流体的注入轴相交的集电极。另外一对收集器与发射器和注入轴线横向间隔开，以便从注入的少数载流子接收在基极区域中产生的横向电流分量。施加到基极的磁场引起少数载流子在横向电流分量之间的再分布，并且可以通过比较所得集电极电流的大小来测量磁场的强度。在发射器的横向相对侧上的基带形成抑制寄生横向注射的结。连接处的反向偏置将注入的少数载流子沿着注入轴线聚焦到更大的程度，从而显着提高器件灵敏度。可以将不同的偏置电压施加到接合部以横向移动注射轴，从而补偿两个收集器中的静态电流的偏移。相对于一对收集器向外和横向间隔开的基带允许独立于施加到接合点的偏置电压来调节静态集电极电流。

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