专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07416904B2 Method for forming dielectric layer of capacitor 失效
标题翻译：电容器介质层形成方法
公开(公告)号：US07416904B2
公开(公告)日：2008-08-26
申请号：US10293530
申请日：2002-11-12
申请人： Jae-Hyoung Choi , Cha-Young Yoo , Suk-Jin Chung , Wan-Don Kim
发明人： Jae-Hyoung Choi , Cha-Young Yoo , Suk-Jin Chung , Wan-Don Kim
IPC分类号： H01L21/00 , H01L21/8242 , H01L21/8222 , H01L21/20
CPC分类号： H01L21/02183 , H01L21/02271 , H01L21/02304 , H01L21/02356 , H01L21/31691 , H01L28/55
摘要： A fabrication method for forming a semiconductor device having a capacitor is provided. A capacitor dielectric layer is formed by depositing a first layer and a second layer. The second layer is a major portion of the capacitor dielectric layer. The first layer acts as a seed layer, while the second layer is expitaxially grown. The material of the second layer as deposited is partially crystal. Nuclear generation and crystal growth occur separately so that the crystalline characteristic of the capacitor dielectric layer and the capacitance characteristic of the capacitor are enhanced. Moreover, the capacitor dielectric layer is crystallized at a relatively low temperature or for a relatively short time, thereby reducing leakage current as well as reducing deformation in the lower electrode. Optionally, The material of the second layer as deposited is not partially crystal but amorphous.
摘要翻译：提供一种用于形成具有电容器的半导体器件的制造方法。通过沉积第一层和第二层形成电容器电介质层。第二层是电容器介电层的主要部分。第一层用作种子层，而第二层被外延生长。沉积的第二层的材料是部分晶体的。核生成和晶体生长分开发生，使得电容器介电层的晶体特性和电容器的电容特性得到增强。此外，电容器电介质层在相对较低的温度或相当短的时间内结晶，从而减少漏电流以及减小下电极的变形。任选地，沉积的第二层的材料不是部分晶体而是无定形的。

12. 发明授权

US08318560B2 Methods of forming integrated circuit devices including a capacitor 有权
标题翻译：形成包括电容器的集成电路器件的方法
公开(公告)号：US08318560B2
公开(公告)日：2012-11-27
申请号：US11680148
申请日：2007-02-28
申请人： Wan-Don Kim , Cha-Young Yoo , Suk-Jin Chung , Jin-Yong Kim
发明人： Wan-Don Kim , Cha-Young Yoo , Suk-Jin Chung , Jin-Yong Kim
IPC分类号： H01L21/8242
CPC分类号： H01L28/65 , H01L28/55 , H01L28/91
摘要： Methods of forming a capacitor of an integrated circuit device include forming a lower electrode of the capacitor on an integrated circuit substrate without exposing a contact plug to be coupled to the lower electrode. A supporting conductor is formed coupling the lower electrode to the contact plug after forming the lower electrode. A capacitor dielectric layer is formed on the lower electrode and an upper electrode of the capacitor is formed on the capacitor dielectric layer.
摘要翻译：形成集成电路器件的电容器的方法包括在集成电路衬底上形成电容器的下电极，而不会暴露要耦合到下电极的接触插头。在形成下电极之后，形成将下电极耦合到接触插塞的支撑导体。电容器电介质层形成在下电极上，电容器的上电极形成在电容器电介质层上。

13. 发明授权

US07842581B2 Methods of forming metal layers using oxygen gas as a reaction source and methods of fabricating capacitors using such metal layers 有权
标题翻译：使用氧气作为反应源形成金属层的方法和使用这种金属层制造电容器的方法
公开(公告)号：US07842581B2
公开(公告)日：2010-11-30
申请号：US11616406
申请日：2006-12-27
申请人： Suk-Jin Chung , Jin-Yong Kim , Wan-Don Kim , Kwang-Hee Lee , Cha-Young Yoo
发明人： Suk-Jin Chung , Jin-Yong Kim , Wan-Don Kim , Kwang-Hee Lee , Cha-Young Yoo
IPC分类号： H01L21/20
CPC分类号： H01L21/28562 , C23C16/06 , C23C16/45542 , H01L28/65
摘要： When a metal layer formed by reaction of a metal source and an oxygen (O2) source is deposited, oxidization of a conductive layer disposed under or on the metal layer can be reduced and/or prevented by a method of forming the metal layer and a method of fabricating a capacitor using the same. Between forming the conductive layer and the metal layer, and between forming the metal layer and the conductive layer, a cycle of supplying a metal source, purging, supplying an oxygen source, purging, plasma processing of reduction gas and purging is repeated at least once. In this case, the metal layer is formed by repeating a cycle of supplying a metal source, purging, supplying an oxygen source and purging.
摘要翻译：当沉积由金属源和氧（O 2）源反应而形成的金属层时，可通过形成金属层的方法和/或通过形成金属层的方法来减少和/或防止设置在金属层下面或金属层上的导电层的氧化制造使用该电容器的电容器的方法。在形成导电层和金属层之间，并且在形成金属层和导电层之间，重复提供金属源，净化，供应氧源，净化，还原气体的等离子体处理和清洗的循环至少一次。在这种情况下，通过重复提供金属源，净化，供应氧源和清洗的循环来形成金属层。

14. 发明申请

US20070207587A1 Integrated Circuit Devices Including a Capacitor and Methods of Forming the Same 有权
标题翻译：包括电容器的集成电路器件及其形成方法
公开(公告)号：US20070207587A1
公开(公告)日：2007-09-06
申请号：US11680148
申请日：2007-02-28
申请人： Wan-Don Kim , Cha-Young Yoo , Suk-Jin Chung , Jin-Yong Kim
发明人： Wan-Don Kim , Cha-Young Yoo , Suk-Jin Chung , Jin-Yong Kim
IPC分类号： H01L21/20
CPC分类号： H01L28/65 , H01L28/55 , H01L28/91
摘要： Methods of forming a capacitor of an integrated circuit device include forming a lower electrode of the capacitor on an integrated circuit substrate without exposing a contact plug to be coupled to the lower electrode. A supporting conductor is formed coupling the lower electrode to the contact plug after forming the lower electrode. A capacitor dielectric layer is formed on the lower electrode and an upper electrode of the capacitor is formed on the capacitor dielectric layer.
摘要翻译：形成集成电路器件的电容器的方法包括在集成电路衬底上形成电容器的下电极，而不会暴露要耦合到下电极的接触插头。在形成下电极之后，形成将下电极耦合到接触插塞的支撑导体。电容器电介质层形成在下电极上，电容器的上电极形成在电容器电介质层上。

15. 发明申请

US20070167006A1 METHODS OF FORMING METAL LAYERS USING OXYGEN GAS AS A REACTION SOURCE AND METHODS OF FABRICATING CAPACITORS USING SUCH METAL LAYERS 有权
标题翻译：使用氧气作为反应源形成金属层的方法和使用这种金属层制造电容器的方法
公开(公告)号：US20070167006A1
公开(公告)日：2007-07-19
申请号：US11616406
申请日：2006-12-27
申请人： Suk-Jin Chung , Jin-Yong Kim , Wan-Don Kim , Kwang-Hee Lee , Cha-Young Yoo
发明人： Suk-Jin Chung , Jin-Yong Kim , Wan-Don Kim , Kwang-Hee Lee , Cha-Young Yoo
IPC分类号： H01L21/44 , H01L21/8242
CPC分类号： H01L21/28562 , C23C16/06 , C23C16/45542 , H01L28/65
摘要： When a metal layer formed by reaction of a metal source and an oxygen (O2) source is deposited, oxidization of a conductive layer disposed under or on the metal layer can be reduced and/or prevented by a method of forming the metal layer and a method of fabricating a capacitor using the same. Between forming the conductive layer and the metal layer, and between forming the metal layer and the conductive layer, a cycle of supplying a metal source, purging, supplying an oxygen source, purging, plasma processing of reduction gas and purging is repeated at least once. In this case, the metal layer is formed by repeating a cycle of supplying a metal source, purging, supplying an oxygen source and purging.
摘要翻译：当沉积通过金属源和氧（O 2 O 2）源的反应形成的金属层时，可以通过以下方法减少和/或防止设置在金属层下面或之上的导电层的氧化：形成金属层的方法和使用其制造电容器的方法。在形成导电层和金属层之间，并且在形成金属层和导电层之间，重复提供金属源，净化，供应氧源，净化，还原气体的等离子体处理和清洗的循环至少一次。在这种情况下，通过重复提供金属源，净化，供应氧源和清洗的循环来形成金属层。

16. 发明授权

US6090704A Method for fabricating a high dielectric capacitor 失效
标题翻译：高介电电容器制造方法
公开(公告)号：US6090704A
公开(公告)日：2000-07-18
申请号：US113142
申请日：1998-07-10
申请人： Wan-Don Kim , Byoung-Taek Lee
发明人： Wan-Don Kim , Byoung-Taek Lee
IPC分类号： H01L21/28 , H01L21/02 , H01L21/60 , H01L21/74 , H01L21/8242 , H01L21/4763 , H01L21/20 , H01L21/44
CPC分类号： H01L27/10894 , H01L21/743 , H01L21/76897 , H01L28/75 , H01L27/10852 , H01L28/55
摘要： A method for fabricating a semiconductor device using a high dielectric material as a dielectric film of a capacitor wherein an etch stopping layer such as BST having a good dry etch selectivity with respect to an interlayer insulating film is formed on the adhesion layer formed on an upper electrode. This etch stopping layer prevents the upper electrode of a capacitor from being exposed to be etched during forming a metal contact.
摘要翻译：一种制造使用高介电材料作为电容器的电介质膜的半导体器件的方法，其中在上层形成的粘合层上形成有相对于层间绝缘膜具有良好的干蚀刻选择性的诸如BST的蚀刻停止层，电极。该蚀刻停止层防止在形成金属接触期间电容器的上电极被暴露而被蚀刻。

17. 发明授权

US09812448B2 Semiconductor devices and methods for fabricating the same 有权
公开(公告)号：US09812448B2
公开(公告)日：2017-11-07
申请号：US14963271
申请日：2015-12-09
申请人： Oh-Seong Kwon , Jin-Kyu Jang , Wan-Don Kim , Hoon-Joo Na , Sang-Jin Hyun
发明人： Oh-Seong Kwon , Jin-Kyu Jang , Wan-Don Kim , Hoon-Joo Na , Sang-Jin Hyun
IPC分类号： H01L27/088 , H01L21/28 , H01L29/49 , H01L29/66 , H01L27/02 , H01L27/11 , H01L29/51 , H01L29/78 , H01L29/165 , H01L21/8234
CPC分类号： H01L27/088 , H01L21/28088 , H01L21/82345 , H01L27/0207 , H01L27/0886 , H01L27/1104 , H01L29/165 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/7848
摘要： Provided are a semiconductor device configured to block a physical diffusion path by forming an oxide layer between barrier layers to prevent impurities from being diffused through the physical diffusion path between the barrier layers, and a method for fabricating the semiconductor device. The semiconductor device includes a gate insulation layer formed on a substrate, a first barrier layer formed on the gate insulation layer, an oxide layer formed on the first barrier layer, the oxide layer including an oxide formed by oxidizing a material included in the first barrier layer, a second barrier layer formed on the oxide layer, a gate electrode formed on the second barrier layer, and source/drains disposed at opposite sides of the gate electrode in the substrate.

18. 发明申请

US20160181412A1 SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160181412A1
公开(公告)日：2016-06-23
申请号：US14963271
申请日：2015-12-09
申请人： Oh-Seong Kwon , Jin-Kyu Jang , Wan-Don Kim , Hoon-Joo Na , Sang-Jin Hyun
发明人： Oh-Seong Kwon , Jin-Kyu Jang , Wan-Don Kim , Hoon-Joo Na , Sang-Jin Hyun
IPC分类号： H01L29/78 , H01L29/06 , H01L27/088
CPC分类号： H01L27/088 , H01L21/28088 , H01L21/82345 , H01L27/0207 , H01L27/0886 , H01L27/1104 , H01L29/165 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/7848
摘要： Provided are a semiconductor device configured to block a physical diffusion path by forming an oxide layer between barrier layers to prevent impurities from being diffused through the physical diffusion path between the barrier layers, and a method for fabricating the semiconductor device. The semiconductor device includes a gate insulation layer formed on a substrate, a first barrier layer formed on the gate insulation layer, an oxide layer formed on the first barrier layer, the oxide layer including an oxide formed by oxidizing a material included in the first barrier layer, a second barrier layer formed on the oxide layer, a gate electrode formed on the second barrier layer, and source/drains disposed at opposite sides of the gate electrode in the substrate.
摘要翻译：提供了一种半导体器件，其被配置为通过在阻挡层之间形成氧化物层来阻挡物理扩散路径，以防止杂质通过阻挡层之间的物理扩散路径扩散，以及制造半导体器件的方法。半导体器件包括：形成在基板上的栅极绝缘层，形成在栅极绝缘层上的第一势垒层，形成在第一势垒层上的氧化物层，氧化物层包括通过氧化包含在第一势垒中的材料形成的氧化物形成在氧化物层上的第二阻挡层，形成在第二阻挡层上的栅电极和设置在基板中的栅电极的相对侧的源极/漏极。

19. 发明授权

US09780183B2 Semiconductor devices having work function metal films and tuning materials 有权
公开(公告)号：US09780183B2
公开(公告)日：2017-10-03
申请号：US14989154
申请日：2016-01-06
申请人： Wan-Don Kim , Oh-Seong Kwon , Hoon-Joo Na , Hyeok-Jun Son , Jae-Yeol Song , Sung-Kee Han , Sang-Jin Hyun
发明人： Wan-Don Kim , Oh-Seong Kwon , Hoon-Joo Na , Hyeok-Jun Son , Jae-Yeol Song , Sung-Kee Han , Sang-Jin Hyun
IPC分类号： H01L29/49 , H01L27/088 , H01L29/423 , H01L21/8234
CPC分类号： H01L29/4966 , H01L21/823431 , H01L21/82345 , H01L21/823462 , H01L27/0886 , H01L29/42364 , H01L29/4238
摘要： A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, and a third transistor comprising a third dielectric film on the substrate and a third work function metal film of the first conductivity type on the third dielectric film. The first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material. The first work function metal film has different thickness than the third work function metal film. Related methods are also described.

20. 发明授权

US06982205B2 Method and manufacturing a semiconductor device having a metal-insulator-metal capacitor 有权
标题翻译：制造具有金属 - 绝缘体 - 金属电容器的半导体器件的方法和制造
公开(公告)号：US06982205B2
公开(公告)日：2006-01-03
申请号：US10055270
申请日：2002-01-22
申请人： Jae-Hyun Joo , Wan-Don Kim
发明人： Jae-Hyun Joo , Wan-Don Kim
IPC分类号： H01L21/8242 , H01L21/469 , H01L21/321
CPC分类号： H01L28/55 , H01L28/60
摘要： A fabrication method for forming a semiconductor device having a MIM (Metal-Insulator-Metal) capacitor is provided. A lower electrode is formed on a substrate. The lower electrode is subjected to a pre-annealing. The pre-annealing includes a thermal annealing in a hydrogen atmosphere, a nitrogen atmosphere or a mixed atmosphere of hydrogen and nitrogen. A capacitor dielectric layer is formed on the lower electrode. An upper electrode is formed on the capacitor dielectric layer. According to the present invention, the characteristic of a MIM capacitor can be enhanced by the pre-annealing without any substantial change in the materiality of the lower electrode.
摘要翻译：提供一种用于形成具有MIM（金属 - 绝缘体 - 金属）电容器的半导体器件的制造方法。在基板上形成下电极。对下电极进行预退火。预退火包括氢气氛，氮气氛或氢气和氮气的混合气氛中的热退火。在下电极上形成电容电介质层。在电容器电介质层上形成上电极。根据本发明，可以通过预退火来提高MIM电容器的特性，而不会使下电极的材料性质发生显着变化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式