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    • 14. 发明授权
    • Variable delay circuit for varying delay time and pulse width
    • 可变延迟电路,用于改变延迟时间和脉冲宽度
    • US5949268A
    • 1999-09-07
    • US914803
    • 1997-08-15
    • Manabu MiuraMakoto Hatakenaka
    • Manabu MiuraMakoto Hatakenaka
    • H03K5/04H03K5/13H03K17/16H03K17/687
    • H03K17/164H03K5/131
    • A variable delay circuit for controlling delay time includes P channel transistors connected in parallel, with respective source electrodes connected to a power supply, respective drain electrodes connected to an output terminal for providing delayed signal, and respective gate electrodes connected to respective control signal input terminals for receiving control signals. The circuit further includes N channel transistors with respective source electrodes connected to ground, respective drain electrodes connected to the output terminal, and respective gate electrode connected to the respective control signal input terminals. Identical or mutually inverted data signals or control signals are supplied to the respective gate electrodes of the P channel transistors and the respective gate electrodes of the N channel transistors.
    • 用于控制延迟时间的可变延迟电路包括并联连接的P沟道晶体管,各个源电极连接到电源,连接到用于提供延迟信号的输出端的相应漏电极以及连接到相应控制信号输入端的各个栅电极 用于接收控制信号。 电路还包括具有连接到地的各个源极的N沟道晶体管,连接到输出端的相应的漏极和连接到各个控制信号输入端的相应的栅电极。 将相同或相互反转的数据信号或控制信号提供给P沟道晶体管的各个栅电极和N沟道晶体管的各个栅电极。
    • 15. 发明授权
    • Phase-locked circuit and interated circuit device
    • 锁相电路和集成电路器件
    • US5539344A
    • 1996-07-23
    • US225885
    • 1994-04-11
    • Makoto Hatakenaka
    • Makoto Hatakenaka
    • G06F1/10G06F1/12G11C11/407H03L7/00H04L7/00H04L7/033
    • H03L7/00G06F1/12
    • The objects are to speed up the operation of an integrated circuit device having a sequential circuit and increase margin of phase synchronization for performing data processing of time sequential circuit. The phase-locked circuit (57) is provided in the integrated circuit (50), and the clock signal (CK7) which is inputted from the outside through the phase-locked circuit is supplied to the sequential circuit (52). The data outputted from the sequential circuit (52) is fed back from the output end of the buffer (Bu56) to the phase-locked circuit (57). In the phase-locked circuit (57), the clock signal (CK7) inputted through the buffer (Bu50) and the output data of the sequential circuit (52) are compared in phase and the phase of the clock signal outputted to the sequential circuit (52) is adjusted so that the phases thereof agree. The output data (DO7) outputted from the sequential circuit (52) is not delayed with respect clock signal (CK7). Accordingly, the data processing in the integrated circuit (70) can be speeded up.
    • 目的是加快具有时序电路的集成电路装置的操作,并且增加用于执行时序电路的数据处理的相位同步的余量。 锁相电路(57)设置在集成电路(50)中,并且通过锁相电路从外部输入的时钟信号(CK7)被提供给顺序电路(52)。 从顺序电路(52)输出的数据从缓冲器(Bu56)的输出端反馈到锁相电路(57)。 在锁相电路57中,通过缓冲器(Bu50)输入的时钟信号(CK7)和时序电路(52)的输出数据进行比较,输出到时序电路的时钟信号的相位 (52)被调节,使得其相位一致。 从时序电路(52)输出的输出数据(DO7)不依赖于时钟信号(CK7)延迟。 因此,可以加快集成电路(70)中的数据处理。
    • 19. 发明授权
    • Semiconductor device downsizing its built-in driver
    • 半导体器件缩小其内置驱动器
    • US06756803B2
    • 2004-06-29
    • US10330072
    • 2002-12-30
    • Manabu MiuraMakoto HatakenakaTakekazu Yamashita
    • Manabu MiuraMakoto HatakenakaTakekazu Yamashita
    • G01R3102
    • G01R31/2884H01L2224/05554H01L2224/48091H01L2224/48137H01L2224/49175H01L2924/3011H01L2924/00014H01L2924/00
    • A semiconductor device includes a first pad, a second pad, a first buffer and a second buffer. The first pad is connected to another semiconductor device in a multi-chip package, and the second pad makes a probing connection in a wafer test. The first buffer drives the another semiconductor device connected to the first pad. The second buffer, being driven by the first buffer, drives a load capacitance of a tester connected to the second pad with the driving power greater than the driving power of the first buffer, and has its active/inactive state controlled by a control signal. The semiconductor device can provide the driving power necessary for the wafer test, and drive the another semiconductor device with preventing generation of drive noise and suppressing current consumption in the normal operation of the multi-chip package.
    • 半导体器件包括第一焊盘,第二焊盘,第一缓冲器和第二缓冲器。 第一焊盘以多芯片封装连接到另一半导体器件,并且第二焊盘在晶片测试中进行探测连接。 第一缓冲器驱动连接到第一焊盘的另一个半导体器件。 由第一缓冲器驱动的第二缓冲器以大于第一缓冲器的驱动功率的驱动功率驱动连接到第二焊盘的测试仪的负载电容,并且由控制信号控制其主动/不活动状态。 半导体器件可以提供晶片测试所需的驱动功率,并驱动另一半导体器件,防止产生驱动噪声并抑制多芯片封装的正常工作中的电流消耗。
    • 20. 发明授权
    • Memory circuit
    • 存储电路
    • US07237175B2
    • 2007-06-26
    • US10193319
    • 2002-07-12
    • Makoto HatakenakaKoji NiiAtsuo MangyoTakeshi Fujino
    • Makoto HatakenakaKoji NiiAtsuo MangyoTakeshi Fujino
    • G11C29/00
    • G06F11/1012
    • When to a memory cell array 21 a read/write operation is performed of the 7-bit data in which parity bits of 3 bits are added to data of 4 bits, an error correction is carried out in concern to each of the 7-bit data. The memory cell array is divided into memory units 31 to 37 each of which has four bits which are arranged along a direction of a word line. On writing the 7-bit data in the memory cell array, bits of the 7-bit data that are different from one another are written as written bit data along the direction of the word line in the memory units 31 to 37, respectively. In the 7-bit data, the written bit data has an interval of four bits. Error correcting circuits performs an error correction of the 7-bit data in each of the 7-bit data.
    • 对于存储单元阵列21,对其中将3位的奇偶校验位加到4位的数据的7位数据执行读/写操作,关于7位的每一位执行错误校正 数据。 存储单元阵列被分成存储器单元31至37,每个存储单元具有沿着字线的方向布置的四位。 在将7位数据写入存储单元阵列时,7位数据彼此不同的位被分别写入存储单元31至37中的字线方向的写入位数据。 在7位数据中,写入位数据的间隔为4位。 误差校正电路对7位数据中的每一个执行7位数据的纠错。