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11. 发明申请

US20110007421A1 MAGNETORESISTIVE EFFECT ELEMENT IN CPP-TYPE STRUCTURE AND MAGNETIC DISK DEVICE 有权
标题翻译： CPP型结构和磁盘设备中的磁阻效应元件
公开(公告)号：US20110007421A1
公开(公告)日：2011-01-13
申请号：US12500907
申请日：2009-07-10
申请人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
发明人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
IPC分类号： G11B5/33 , G11B5/60
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , H01L43/08
摘要： An MR element in a CPP-GMR structure includes a first ferromagnetic layer, a spacer layer that is epitaxially formed on the first ferromagnetic layer, a second ferromagnetic layer that is located on the spacer layer, and that is laminated with the first ferromagnetic layer to sandwich the spacer layer. A sense current flows along a lamination direction of the first and second ferromagnetic layers. Angle of magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer relatively change due to an externally applied magnetic field.
摘要翻译： CPP-GMR结构中的MR元件包括第一铁磁层，外延形成在第一铁磁层上的间隔层，位于间隔层上的第二铁磁层，并且与第一铁磁层层压到夹住间隔层。感测电流沿着第一和第二铁磁层的层叠方向流动。第一铁磁层和第二铁磁层的磁化方向的角度由于外部施加的磁场而相对变化。

12. 发明申请

US20100232073A1 Magnetoresistance effect element having layer containing Zn at the interface between magnetic layer and non-magnetic intermediate layer 有权
标题翻译：磁阻效应元件具有在磁性层和非磁性中间层之间的界面处含有Zn的层
公开(公告)号：US20100232073A1
公开(公告)日：2010-09-16
申请号：US12382140
申请日：2009-03-10
申请人： Tsutomu Chou , Shinji Hara , Yoshihiro Tsuchiya , Hironobu Matsuzawa
发明人： Tsutomu Chou , Shinji Hara , Yoshihiro Tsuchiya , Hironobu Matsuzawa
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A thin film magnetic head includes a magnetoresistive effect (MR) laminated body that has the following structure: first and second magnetic layers in which the magnetization direction of at least one of the magnetic layers changes according to an external magnetic field; the first magnetic layer is provided at a lower side of a laminated direction; the second magnetic layer is provided at an upper side of the laminated direction; a non-magnetic intermediate layer made of ZnO sandwiched between the first and the second magnetic layers; a first intermediate interface layer is provided at the interface between the first magnetic layer and the non-magnetic intermediate layer; and a second intermediate interface layer is provided at the interface between the non-magnetic intermediate layer and the second magnetic layer. At least the first intermediate interface layer contains Ag and Zn, or Au and Zn.
摘要翻译：薄膜磁头包括具有以下结构的磁阻效应（MR）层叠体：其中至少一个磁性层的磁化方向根据外部磁场而变化的第一和第二磁性层; 第一磁性层设置在层叠方向的下侧; 第二磁性层设置在层叠方向的上侧; 由夹在第一和第二磁性层之间的ZnO制成的非磁性中间层; 第一中间界面层设置在第一磁性层和非磁性中间层之间的界面处; 并且在非磁性中间层和第二磁性层之间的界面处设置第二中间界面层。至少第一中间界面层含有Ag和Zn，或Au和Zn。

13. 发明申请

US20100149689A1 Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layer including amorphous layer 审中-公开
公开(公告)号：US20100149689A1
公开(公告)日：2010-06-17
申请号：US12314464
申请日：2008-12-11
申请人： Yoshihiro Tsuchiya , Tsutomu Chou , Daisuke Miyauchi , Shinji Hara , Takahiko Machita , Hironobu Matsuzawa
发明人： Yoshihiro Tsuchiya , Tsutomu Chou , Daisuke Miyauchi , Shinji Hara , Takahiko Machita , Hironobu Matsuzawa
IPC分类号： G11B5/60 , G11B5/33
CPC分类号： G11B5/3912 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F10/3272 , H01F10/3295
摘要： A thin film magnetic head includes a magnetoresistance (MR) layered body that has first and second magnetic layers whose magnetization direction are changed according to an external magnetic field, a nonmagnetic middle layer and where the first magnetic layer, the nonmagnetic middle layer and the second magnetic layer are disposed in a manner of facing each other in respective order, first and second shield layers that are disposed in a manner of sandwiching the MR-stack in the film surface orthogonal direction of the MR-stack facing the first magnetic layer and the second magnetic layer, respectively, and that also serve as an electrode for applying a sense current to the film surface orthogonal direction of the MR-stack; and a bias magnetic field application means that is disposed on an opposite surface of an air bearing surface (ABS) of the MR-stack, and that applies a bias magnetic field to the MR-stack in the direction orthogonal to the ABS. The first shield layer has a first exchange coupling magnetic field (ECMF) application layer that is disposed in a manner of facing the first magnetic layer, and that transmits to the first magnetic layer an exchange coupling magnetic field in the direction in parallel with the ABS, and that includes an amorphous layer, and has a first antiferromagnetic layer that is disposed on a rear surface of the first ECMF application layer viewed from the first magnetic layer in a manner of facing the first ECMF application layer, and that is exchange-coupled with the first ECMF application layer. The second shield layer has a second exchange coupling magnetic field (ECMF) application layer that is disposed in a manner of facing the second magnetic layer, and that transmits to the second magnetic layer the exchange coupling magnetic field in a direction in parallel with the ABS; and a second antiferromagnetic layer that is disposed on a rear surface of the second ECMF application layer viewed from the second magnetic layer, and that is exchange-coupled with the second ECMF application layer.

14. 发明申请

US20100124617A1 Fabrication process for magnetoresistive devices of the CPP type 有权
标题翻译： CPP型磁阻器件的制造工艺
公开(公告)号：US20100124617A1
公开(公告)日：2010-05-20
申请号：US12292566
申请日：2008-11-20
申请人： Hironobu Matsuzawa , Tsutomu Chou , Yoshihiro Tsuchiya , Shinji Hara
发明人： Hironobu Matsuzawa , Tsutomu Chou , Yoshihiro Tsuchiya , Shinji Hara
IPC分类号： B05D5/12
CPC分类号： G11B5/3163 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F41/307 , H01L43/12
摘要： The inventive fabrication process for magnetoresistive devices (CPP-GMR devices) involves the formation of a zinc oxide or ZnO layer that provides the intermediate layer of a spacer layer, comprising Zn film formation operation for forming a zinc or Zn layer and Zn film oxidization operation for oxidizing the zinc film after the Zn film formation operation. The Zn film formation operation is implemented such that after a multilayer substrate having a multilayer structure before the formation of the Zn film is cooled down to the temperature range of −140° C. to −60° C., the formation of the Zn film is set off, and the Zn film oxidization operation is implemented such that after the completion of the Zn film oxidization operation, oxidization treatment is set off at the substrate temperature range of −120° C. to −40° C. Thus, excelling in both flatness and crystallizability, the ZnO layer makes sure the device has high MR ratios, and can further have an area resistivity AR best suited for the device.
摘要翻译：用于磁阻器件（CPP-GMR器件）的本发明制造方法涉及形成提供间隔层的中间层的氧化锌或ZnO层，其包括用于形成锌或Zn层的Zn膜形成操作和Zn膜氧化操作用于在Zn膜形成操作之后氧化锌膜。实施Zn膜形成操作，使得在形成Zn膜之前具有多层结构的多层基板被冷却至-140℃至-60℃的温度范围，形成Zn膜并且进行Zn膜氧化操作，使得在Zn膜氧化操作完成之后，在-120℃至-40℃的衬底温度范围内，氧化处理被降低。因此，优异的平坦度和结晶性，ZnO层确保器件具有高MR比，并且还可以具有最适合于器件的面积电阻率AR。

15. 发明授权

US08345390B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US08345390B2
公开(公告)日：2013-01-01
申请号：US12379625
申请日：2009-02-26
申请人： Yoshihiro Tsuchiya , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa
发明人： Yoshihiro Tsuchiya , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa
IPC分类号： G11B5/39
CPC分类号： G01R33/098 , B82Y25/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/10 , Y10T29/49021 , Y10T428/1114 , Y10T428/1171
摘要： An MR element according to the present invention has the superior effects that further improve an MR ratio because a structure of a spacer layer 40 is configured of a certain three-layer structure with certain materials, and at least one of a first ferromagnetic layer 30 and a second ferromagnetic layer 50 contains a certain amount of an element selected from the group of nitrogen (N), carbon (C), and oxygen (O).
摘要翻译：根据本发明的MR元件具有进一步提高MR比的优越效果，因为间隔层40的结构由具有某些材料的特定三层结构构成，并且第一铁磁层30和第二铁磁层50含有一定量的选自氮（N），碳（C）和氧（O）的元素。

16. 发明授权

US08331063B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US08331063B2
公开(公告)日：2012-12-11
申请号：US12500907
申请日：2009-07-10
申请人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
发明人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , H01L43/08
摘要： An MR element in a CPP-GMR structure includes a first ferromagnetic layer, a spacer layer that is epitaxially formed on the first ferromagnetic layer, a second ferromagnetic layer that is located on the spacer layer, and that is laminated with the first ferromagnetic layer to sandwich the spacer layer. A sense current flows along a lamination direction of the first and second ferromagnetic layers. Angle of magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer relatively change due to an externally applied magnetic field.
摘要翻译： CPP-GMR结构中的MR元件包括第一铁磁层，外延形成在第一铁磁层上的间隔层，位于间隔层上的第二铁磁层，并且与第一铁磁层层压到夹住间隔层。感测电流沿着第一和第二铁磁层的层叠方向流动。第一铁磁层和第二铁磁层的磁化方向的角度由于外部施加的磁场而相对变化。

17. 发明授权

US08029853B2 Fabrication process for magnetoresistive devices of the CPP type 有权
标题翻译： CPP型磁阻器件的制造工艺
公开(公告)号：US08029853B2
公开(公告)日：2011-10-04
申请号：US12292566
申请日：2008-11-20
申请人： Hironobu Matsuzawa , Tsutomu Chou , Yoshihiro Tsuchiya , Shinji Hara
发明人： Hironobu Matsuzawa , Tsutomu Chou , Yoshihiro Tsuchiya , Shinji Hara
IPC分类号： B05D5/12
CPC分类号： G11B5/3163 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F41/307 , H01L43/12
摘要： The inventive fabrication process for magnetoresistive devices (CPP-GMR devices) involves the formation of a zinc oxide or ZnO layer that provides the intermediate layer of a spacer layer, comprising Zn film formation operation for forming a zinc or Zn layer and Zn film oxidization operation for oxidizing the zinc film after the Zn film formation operation. The Zn film formation operation is implemented such that after a multilayer substrate having a multilayer structure before the formation of the Zn film is cooled down to the temperature range of −140° C. to −60° C., the formation of the Zn film is set off, and the Zn film oxidization operation is implemented such that after the completion of the Zn film oxidization operation, oxidization treatment is set off at the substrate temperature range of −120° C. to −40° C. Thus, excelling in both flatness and crystallizability, the ZnO layer makes sure the device has high MR ratios, and can further have an area resistivity AR best suited for the device.
摘要翻译：用于磁阻器件（CPP-GMR器件）的本发明制造方法涉及形成提供间隔层的中间层的氧化锌或ZnO层，其包括用于形成锌或Zn层的Zn膜形成操作和Zn膜氧化操作用于在Zn膜形成操作之后氧化锌膜。实施Zn膜形成操作，使得在形成Zn膜之前具有多层结构的多层基板被冷却至-140℃至-60℃的温度范围，形成Zn膜并且进行Zn膜氧化操作，使得在Zn膜氧化操作完成之后，在-120℃至-40℃的衬底温度范围内，氧化处理被降低。因此，优异的平坦度和结晶性，ZnO层确保器件具有高MR比，并且还可以具有最适合于器件的面积电阻率AR。

18. 发明申请

US20110051295A1 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US20110051295A1
公开(公告)日：2011-03-03
申请号：US12461972
申请日：2009-08-31
申请人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
发明人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01L43/08 , H01L43/10
摘要： In an MR element of the present invention, an effect of an extremely-high MR ratio is obtained since a crystal structure of a CoFe magnetic layer in the vicinity of an interface with a spacer layer is formed as a close packed structure, such as an hcp structure and an fcc structure, and a total existing ratio of these crystal structures is 25% or more by an area ratio.
摘要翻译：在本发明的MR元件中，由于在与间隔层的界面附近的CoFe磁性层的晶体结构形成为紧密堆积结构，所以获得了极高的MR比的效果，例如 hcp结构和fcc结构，并且这些晶体结构的总存在比例通过面积比为25％以上。

19. 发明授权

US08405935B2 Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and nonmagnetic layer 有权
标题翻译：具有间隔层的磁阻效应元件包括含有氧化镓和非磁性层的主间隔层
公开(公告)号：US08405935B2
公开(公告)日：2013-03-26
申请号：US12979613
申请日：2010-12-28
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa , Hayato Koike
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa , Hayato Koike
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996 , Y10T428/1121
摘要： A magnetoresistive effect element (MR element) includes first and second magnetic layers of which relative angles formed by magnetization directions change in relation to an external magnetic field; and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned on a side closer than the second magnetic layer in regards to a substrate above which the magnetoresistive effect element is formed, and the spacer layer includes a main spacer layer made of gallium oxide as the primary component, and a first nonmagnetic layer positioned between the main spacer layer and the first magnetic layer and contains copper and gallium.
摘要翻译：磁阻效应元件（MR元件）包括由磁化方向形成的相对角度相对于外部磁场而变化的第一和第二磁性层; 以及位于所述第一磁性层和所述第二磁性层之间的间隔层。相对于其上形成有磁阻效应元件的基板，第一磁性层位于比第二磁性层更靠近的一侧，并且间隔层包括以氧化镓为主要成分的主间隔层，第一磁性层位于主间隔层和第一磁性层之间并且包含铜和镓的非磁性层。

20. 发明授权

US08564911B2 Magneto-resistive effect element having spacer layer including gallium oxide layer with metal element 有权
标题翻译：具有间隔层的磁阻效应元件包括具有金属元素的氧化镓层
公开(公告)号：US08564911B2
公开(公告)日：2013-10-22
申请号：US13029415
申请日：2011-02-17
申请人： Hayato Koike , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
发明人： Hayato Koike , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3929 , G11B2005/3996
摘要： A magneto-resistive effect (MR) element includes: first and second magnetic layers in which a relative angle formed by magnetization directions changes according to an external magnetic field; and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer includes a main spacer layer composed of gallium oxide as a primary component and containing at least one metal element selected from a group of magnesium, zinc, indium and aluminum.
摘要翻译：磁阻效应（MR）元件包括：由磁化方向形成的相对角度根据外部磁场而变化的第一和第二磁性层; 以及位于所述第一磁性层和所述第二磁性层之间的间隔层。间隔层包括由氧化镓作为主要成分构成的主要间隔层，并含有至少一种选自镁，锌，铟和铝的金属元素。

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