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11. 发明授权

US07691692B2 Substrate processing apparatus and a manufacturing method of a thin film semiconductor device 失效
标题翻译：基板处理装置及薄膜半导体装置的制造方法
公开(公告)号：US07691692B2
公开(公告)日：2010-04-06
申请号：US12232433
申请日：2008-09-17
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , C23C16/303 , C23C16/345 , C23C16/402 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/67155 , H01L21/67207 , H01L27/1281 , H01L29/41733 , Y10S438/905 , Y10S438/908
摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
摘要翻译：基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能，所述处理室中的至少一个具有加热功能。所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

12. 发明申请

US20090029509A1 Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device 失效
公开(公告)号：US20090029509A1
公开(公告)日：2009-01-29
申请号：US12232433
申请日：2008-09-17
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
IPC分类号： H01L21/336
CPC分类号： H01L21/02686 , C23C16/303 , C23C16/345 , C23C16/402 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/67155 , H01L21/67207 , H01L27/1281 , H01L29/41733 , Y10S438/905 , Y10S438/908
摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

13. 发明授权

US07271082B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07271082B2
公开(公告)日：2007-09-18
申请号：US10164019
申请日：2002-06-07
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , C23C16/303 , C23C16/345 , C23C16/402 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/67155 , H01L21/67207 , H01L27/1281 , H01L29/41733 , Y10S438/905 , Y10S438/908
摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
摘要翻译：基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能，所述处理室中的至少一个具有加热功能。所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

14. 发明授权

US07374938B2 Process for producing non-cellulosic callose fiber by plant protoplast and callose fiber 失效
标题翻译：通过植物原生质体和胼lose质纤维生产非纤维素胼lose纤维的方法
公开(公告)号：US07374938B2
公开(公告)日：2008-05-20
申请号：US10333225
申请日：2001-03-30
申请人： Tetsuo Kondou , Jun Magoshi , Hisashi Abe , Hamako Sasamoto
发明人： Tetsuo Kondou , Jun Magoshi , Hisashi Abe , Hamako Sasamoto
IPC分类号： A01H4/00 , C12P19/04
CPC分类号： C12P19/04 , C08B37/00 , C08B37/0024 , D01F9/00
摘要： A method for producing non-cellulosic callose fiber by using plant protoplast, which imposes less burden to the environment with reduced energy consumption compared to conventional natural fibers is provided; it comprises the addition of an inorganic ion to a plant protoplast cultivation system, which leads the plant protoplast to produce non-cellulosic callose fiber.
摘要翻译：提供了一种通过使用植物原生质体生产非纤维素胼lose纤维的方法，其与常规天然纤维相比降低了能量消耗对环境的负担较小; 它包括向植物原生质体培养系统中添加无机离子，其导致植物原生质体生产非纤维素胼lose质纤维。

15. 发明申请

US20070173046A1 Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device 失效
标题翻译：基板处理装置及方法以及薄膜半导体装置的制造方法
公开(公告)号：US20070173046A1
公开(公告)日：2007-07-26
申请号：US11727257
申请日：2007-03-26
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , C23C16/303 , C23C16/345 , C23C16/402 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/67155 , H01L21/67207 , H01L27/1281 , H01L29/41733 , Y10S438/905 , Y10S438/908
摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
摘要翻译：基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能，所述处理室中的至少一个具有加热功能。所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

16. 发明申请

US20050073250A1 Apparatus for testing electroluminescent display 有权
标题翻译：用于测试电致发光显示器的装置
公开(公告)号：US20050073250A1
公开(公告)日：2005-04-07
申请号：US10952642
申请日：2004-09-29
申请人： Hisashi Abe , Derek Luke
发明人： Hisashi Abe , Derek Luke
IPC分类号： G09G3/30 , H01J1/62 , H01J63/04 , H05B33/12
CPC分类号： H01L27/3288 , G09G3/006 , G09G2300/0426
摘要： An apparatus for improving testability of electroluminescent displays (ELDs) is provided, incorporating at least two sets of electrodes, one set for connecting rows of pixels, and a second set for connecting columns of pixels, wherein at least one electrode set is interleaved in two subsets. The first subset has electrode extensions of a first length, and the second subset has electrode extensions of a second, shorter, length. A first connector is disposed generally in a direction perpendicular to the electrode extensions of both subsets and in electrical contact with the electrode extensions of the second subset. A second connector is disposed generally in a direction perpendicular to the electrode extensions of the first subset, and in electrical contact with the electrode extensions of only the first subset. A set of insulating patches separate the electrode extensions of the first subset from the first connector. The apparatus of the present invention restricts overvoltage during connection/disconnection of test apparatus.
摘要翻译：提供一种用于提高电致发光显示器（ELD）的可测试性的装置，其包括至少两组电极，一组用于连接像素行，以及用于连接像素列的第二组，其中至少一个电极组交错在两个子集第一子集具有第一长度的电极延伸部分，第二子集具有第二长度较短的电极延伸部分。第一连接器通常设置在垂直于两个子集的电极延伸部分的方向上并且与第二子集的电极延伸部电接触。第二连接器通常设置在垂直于第一子集的电极延伸部分的方向上，并且仅与第一子集的电极延伸部电接触。一组绝缘贴片将第一子集的电极延伸部与第一连接器分开。本发明的装置在测试装置的连接/断开期间限制过电压。

17. 发明授权

US06499427B1 Plasma CVD apparatus 有权
标题翻译：等离子体CVD装置
公开(公告)号：US06499427B1
公开(公告)日：2002-12-31
申请号：US09935660
申请日：2001-08-24
申请人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
发明人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
IPC分类号： C23C16509
CPC分类号： H01J37/32477 , C23C16/4401 , C23C16/5096 , Y10S438/905
摘要： In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.
摘要翻译：在等离子体CVD装置中，防止了不必要的放电，例如电弧放电，由于附着在反应室上的膜的剥离引起的颗粒的量减少，并且在该设备的工作时间内有助于生产的时间的百分比增加同时保持设备的扩大和易于加工的性能。等离子体CVD装置被构造成使得在具有电源113，真空排气装置118和反应气体引入管114的导电反应室104中，在由电极111围绕的空间中产生等离子体115，衬底保持器 112和绝缘体120。

18. 发明授权

US5330578A Plasma treatment apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5330578A
公开(公告)日：1994-07-19
申请号：US849738
申请日：1992-03-11
申请人： Mitsunori Sakama , Takeshi Fukada , Mitsuhiro Ichijo , Hisashi Abe
发明人： Mitsunori Sakama , Takeshi Fukada , Mitsuhiro Ichijo , Hisashi Abe
IPC分类号： C23C16/458 , C23C16/509 , H01J37/32 , C23C16/50 , C23C16/54
CPC分类号： H01J37/32091 , C23C16/4587 , C23C16/5096 , H01J37/32532
摘要： A plasma gaseous reaction apparatus including a reaction chamber, a system for supplying reaction gas to the reaction chamber and an exhaust system for exhausting unnecessary reaction products. Specifically, the apparatus includes a pair of facing electrodes disposed in the reaction chamber which are covered by shields except the area in which the electrodes face each other. The shields may include a first and second shield wherein the inner first shield is electrically insulated from the electrodes and the outer second shield is kept at earth potential. The apparatus further includes a substrate container for supporting substrates which surrounds the substrates by a frame. The outside of the substrate container is kept in the earth potential and is covered by a conductor plate electrically insulated from the container. The shields and substrate container are configured such that plasma generated by electric power supplied by the electrodes is confined in a space surrounded by the shields and the container.
摘要翻译：一种等离子气体反应装置，包括反应室，用于向反应室供应反应气体的系统和用于排出不必要的反应产物的排气系统。具体地说，该装置包括设置在反应室中的一对面对电极，除了电极彼此面对的区域之外，被屏蔽物覆盖。屏蔽件可以包括第一和第二屏蔽件，其中内部第一屏蔽件与电极电绝缘，并且外部第二屏蔽件保持在地电位。该装置还包括用于支撑通过框架围绕基板的基板的基板容器。基板容器的外部保持在地电势中并被与容器电绝缘的导体板覆盖。屏蔽和基板容器被配置为使得由电极提供的电力产生的等离子体被限制在由屏蔽件和容器包围的空间中。

19. 发明授权

US08304350B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08304350B2
公开(公告)日：2012-11-06
申请号：US12705004
申请日：2010-02-12
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
IPC分类号： H01L21/461
CPC分类号： H01L21/02686 , C23C16/303 , C23C16/345 , C23C16/402 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/67155 , H01L21/67207 , H01L27/1281 , H01L29/41733 , Y10S438/905 , Y10S438/908
摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
摘要翻译：基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能，所述处理室中的至少一个具有加热功能。所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

20. 发明授权

US08278195B2 Plasma CVD apparatus 有权
标题翻译：等离子体CVD装置
公开(公告)号：US08278195B2
公开(公告)日：2012-10-02
申请号：US13287597
申请日：2011-11-02
申请人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
发明人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
IPC分类号： H01L21/469
CPC分类号： H01J37/32477 , C23C16/4401 , C23C16/5096 , Y10S438/905
摘要： In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.
摘要翻译：在等离子体CVD装置中，防止了不必要的放电，例如电弧放电，由于附着在反应室上的膜的剥离引起的颗粒的量减少，并且在该设备的工作时间内有助于生产的时间的百分比增加同时保持设备的扩大和易于加工的性能。等离子体CVD装置被构造成使得在具有电源113，真空排气装置118和反应气体引入管114的导电反应室104中，在由电极111围绕的空间中产生等离子体115，衬底保持器 112和绝缘体120。

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