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    • 12. 发明授权
    • Low pressure CVD apparatus comprising gas distribution collimator
    • 低压CVD装置包括气体分配准直器
    • US5421888A
    • 1995-06-06
    • US175690
    • 1993-12-30
    • Toshiaki Hasegawa
    • Toshiaki Hasegawa
    • C23C16/04C23C16/44C23C16/455C23C16/00
    • C23C16/45565C23C16/045C23C16/45591
    • The present invention provides a low-pressure CVD apparatus capable of forming a film with improved step coverage and which fills up contact holes without forming any seam therein. The low-pressure CVD apparatus comprises a CVD reaction chamber (6) provided with a source gas inlet (5), a susceptor (1) for supporting a wafer (2), and a gas distributing means (3) disposed between the source gas inlet (5) and a wafer (2) supported on the susceptor (1) to distribute a source gas uniformly over the surface of the wafer (2). The gas distributing means (3) is provided with a plurality of minute pores (16) serving as passages (10a) for the source gas and extending substantially perpendicularly to the surface of the wafer (2).
    • 本发明提供一种低压CVD装置,其能够形成具有改善的台阶覆盖率的膜,并且填充接触孔而不在其中形成任何接缝。 低压CVD装置包括设置有源气体入口(5)的CVD反应室(6),用于支撑晶片(2)的基座(1)和设置在源气体之间的气体分配装置 入口(5)和支撑在基座(1)上的晶片(2),以将源气体均匀地分布在晶片(2)的表面上。 气体分配装置(3)设置有用作源气体的通道(10a)的多个微孔(16),并基本上垂直于晶片(2)的表面延伸。
    • 13. 发明授权
    • Method of making a metal plug
    • 制作金属插头的方法
    • US5374591A
    • 1994-12-20
    • US856115
    • 1992-03-23
    • Toshiaki HasegawaJunichi Sato
    • Toshiaki HasegawaJunichi Sato
    • H01L21/285H01L21/28H01L21/302H01L21/3065H01L21/768H01L21/441
    • H01L21/76802H01L21/76841H01L21/76877
    • A metal plug is formed in a connection hole such as a via hole or a contact hole to provide an interconnection between multilayer wires in a semiconductor integrated circuit. First, an adhesion layer is deposited on an insulating film, and an area of the adhesion layer is etched away isotropic etching through an opening in a resist mask, the area being larger than the opening in the resist mask. Thereafter, the insulating film is etched through the opening in the resist mask by anisotropic etching, forming a connection hole in the insulating film. Then, a metal layer such as a blanket tungsten layer is deposited on the adhesion layer and in the connection hole. The metal layer is etched back and the adhesion layer is etched away, leaving the metal layer as a metal plug in the connection hole.
    • 金属插塞形成在诸如通孔或接触孔的连接孔中,以在半导体集成电路中的多层导线之间形成互连。 首先,在绝缘膜上沉积粘合层,并且通过抗蚀剂掩模中的开口蚀刻粘附层的区域各向同性蚀刻,该面积大于抗蚀剂掩模中的开口。 此后,通过各向异性蚀刻在抗蚀剂掩模中的开口蚀刻绝缘膜,在绝缘膜中形成连接孔。 然后,在粘合层和连接孔中沉积诸如覆盖钨层的金属层。 金属层被回蚀刻,并且粘附层被蚀刻掉,使金属层作为连接孔中的金属塞。
    • 14. 发明授权
    • Process and device for production of allyl chloride
    • 制备烯丙基氯的方法和装置
    • US5367105A
    • 1994-11-22
    • US139851
    • 1993-10-22
    • Hidetaka MiyazakiToshiaki HasegawaYoshihiko KajimotoSusumu Mochida
    • Hidetaka MiyazakiToshiaki HasegawaYoshihiko KajimotoSusumu Mochida
    • C07C17/02B01J19/26C07C17/10C07C21/067
    • B01J19/26C07C17/10
    • A process for the production of allyl chloride, which comprises introducing propylene and chlorine into a reactor having at least one propylene-injection opening and at least one chlorine-injection opening, these openings being independent of each other, through the respective injection openings, and reacting them in a vapor phase, wherein propylene and chlorine are introduced into the reactor by injecting them in almost the same direction from the propylene-injection opening and the chlorine-injection opening which is closest to said propylene-injection opening, with a linear velocity in the propylene-injection opening, calculated as a value of at 300.degree. C. and 1 kg/cm.sup.2.G, of 100 m/sec or higher and a linear velocity of the chlorine-injection opening, calculated as a value of at 100.degree. C. and 1 kg/cm.sup.2.G, of 70 m/sec or higher, and the propylene-injection opening and the chlorine-injection opening are situated to meet the following expression (1),0.5.ltoreq.L/(dp+dc).ltoreq.20 (1)wherein dp is a diameter of the propylene-injection opening, dc is a diameter of the chlorine-injection opening which is closest to said propylene-injection opening, and L is a distance between centers of these two injection openings.
    • 一种制备烯丙基氯的方法,其包括将丙烯和氯引入具有至少一个丙烯注射开口和至少一个氯注入口的反应器中,这些开口彼此独立地通过相应的注射开口,以及 在气相中使它们反应,其中丙烯和氯通过从丙烯注入开口和最接近所述丙烯注入口的氯注入口以几乎相同的方向注入反应器,以线速度 在丙烯注入口中,以300℃和1kg / cm 2 G的值计算为100m / sec或更高,氯注入口的线速度计算为100的值 ℃和1kg / cm 2 .G,为70m / sec以上,丙烯注入口和氯气注入口为满足下式(1),0.5≤L/(dp + dc)
    • 19. 发明申请
    • REACTOR COMBUSTION CONTROL METHOD AND REACTOR
    • 反应器燃烧控制方法与反应器
    • US20050191591A1
    • 2005-09-01
    • US10508929
    • 2003-03-28
    • Takaaki MohriToshiaki YoshiokaYoshikazu HozumiTetsu ShiozakiToshiaki HasegawaSusumu Mochida
    • Takaaki MohriToshiaki YoshiokaYoshikazu HozumiTetsu ShiozakiToshiaki HasegawaSusumu Mochida
    • F23C1/00F23C5/08F23L15/02F27D13/00
    • F23L15/02F23C5/08Y02E20/348
    • A reactor combustion control method using a high temperature air combustion technology capable of reducing a temperature difference in a reactor without producing cracking and caulking in reaction tubes and the reactor controlled by using the method, the reactor wherein second burners (8) are disposed in a space formed between two or more reaction tubes (7) adjacent to each other so as to inject fuel in the extending direction of the reaction tubes (7), and partial combustion air feeding devices (10) and (11) for the second burners discharging exhaust gas in a combustion chamber (2) to the outside of the reactor through a permeable heat reservoir and feeding combustion air heated to a high temperature by the latent heat of the heat reservoir to the second burners (8) are installed; the method comprising the steps of raising the temperature in the reactor by the combustion of only the first burners (3a) to (6a) until the inside of a reactor body (1) is brought into a high temperature air combustion state, starting the combustion of the second burners (8) after the inside of the reactor body (1) is brought into the high temperature air combustion state, and decreasing the amount of combustion of the plurality of first burners (3a) to (6a) according an increase in combustion amount of the second burners (8) whereby a necessary combustion state can be provided.
    • 一种使用高温空气燃烧技术的反应器燃烧控制方法,其中第二燃烧器(8)设置在反应器中,其中第二燃烧器(8)设置在反应器中,所述反应器燃烧控制方法能够降低反应器中的温度差而不产生反应管中的裂缝和填缝, 在彼此相邻的两个或更多个反应管(7)之间形成的空间,以便在反应管(7)的延伸方向上喷射燃料,以及用于第二燃烧器排出的部分燃烧空气供给装置(10)和(11) 燃烧室(2)中的废气通过可渗透的储热器并通过蓄热器的潜热将第一燃烧器(8)的加热到高温的燃烧空气供给到反应器的外部; 该方法包括以下步骤:通过仅第一燃烧器(3a)至(6a)的燃烧使反应器中的温度升高直到反应器主体(1)的内部进入高温空气燃烧状态,起动 第二燃烧器(8)在反应器主体(1)内部的燃烧进入高温空气燃烧状态,并且减少多个第一燃烧器(3a)至(6a)的燃烧量, 根据第二燃烧器(8)的燃烧量的增加,由此可以提供必要的燃烧状态。