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11. 发明授权

US06661225B2 Revolution detecting device 有权
公开(公告)号：US06661225B2
公开(公告)日：2003-12-09
申请号：US10348187
申请日：2003-01-22
申请人： Inao Toyoda , Yasutoshi Suzuki , Yuichiro Murata , Hirofumi Uenoyama
发明人： Inao Toyoda , Yasutoshi Suzuki , Yuichiro Murata , Hirofumi Uenoyama
IPC分类号： G11B5147
CPC分类号： G01D5/145 , B82Y25/00 , G01P3/487 , G01R33/093
摘要： In a revolution detecting device, a tunneling magnetoresistance sensor having an element located in a region is provided. The tunneling magnetoresistance sensor comprises a substrate, a pinned layer composed of ferromagnetism material and located to one side of the substrate, a tunneling layer composed of insulating film and located to one side of the pinned layer and a free layer composed of ferromagnetism film and located to one side of the tunneling layer. The element is configured to detect a change of magnetoresistance of the element according to a magnetic field applied in the region in which the element is located. The change of the magnetoresistance of the element is based on a change of current flowing through the tunneling layer between the pinned layer and the free layer. In the revolution detecting device, a revolution member is disposed in a vicinity of the element in the Y axis from a viewpoint of the element. The revolution member has a surface portion opposite to the element. The surface portion is formed with S poles and N poles which are alternately arranged. In the revolution detecting device, a magnet is disposed in a vicinity of the element and generating the magnetic field and a direction of the magnetic field is substantially parallel to the Y axis at a center portion of the element. When the revolution member revolves, the S poles and N poles are configured to move substantially in parallel to the X axis on the Y axis determined by the element.

12. 发明授权

US5936159A Semiconductor sensor having multi-layer movable beam structure film 失效
标题翻译：具有多层可移动束结构膜的半导体传感器
公开(公告)号：US5936159A
公开(公告)日：1999-08-10
申请号：US755097
申请日：1996-11-25
申请人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
发明人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
IPC分类号： G01P15/08 , G01P15/12 , H01L21/28 , H01L29/51 , H01L29/84
CPC分类号： H01L21/28238 , G01P15/0802 , G01P15/124 , H01L29/51 , H01L29/84 , G01P2015/0814 , G01P2015/0828
摘要： A semiconductor sensor including a movable member beam structure having a reduced deflection characteristic. The sensor includes a movable beam structure film suspended from a semiconductor substrate, with a gap interposed between the beam structure film and the substrate. The beam structure film is composed of a plurality of film layers that are laminated in a direction of film thickness. Further, a stress relieving layer is interposed between respective films to reduce overall internal stress on the structure.
摘要翻译：一种半导体传感器，包括具有减小的偏转特性的可动构件梁结构。传感器包括从半导体衬底悬挂的可移动的光束结构膜，其间插入在光束结构膜和衬底之间。束结构膜由沿膜厚方向层叠的多个膜层构成。此外，应力消除层插入在各个膜之间以减小结构上的整体内部应力。

13. 发明授权

US06812694B2 Magnetic sensor adjusting method, magnetic sensor adjusting device and magnetic sensor 有权
标题翻译：磁传感器调节方法，磁传感器调节装置及磁传感器
公开(公告)号：US06812694B2
公开(公告)日：2004-11-02
申请号：US10811874
申请日：2004-03-30
申请人： Hirofumi Uenoyama
发明人： Hirofumi Uenoyama
IPC分类号： G01B714
CPC分类号： G01D5/24452 , G01D5/147 , G01D5/24428
摘要： The present invention provides a magnetic sensor adjusting method that can always be accurate in sensing a sensing target satisfactorily irrespective of fluctuations of a sensing gap length that may occur between different magnetic sensor products or in one magnetic sensor product, and that can prevent from occurring an irregularity of a phase of a binarized waveform edge. Within a magnetic gap of the magnetic sensor, a sensing gap length formed between a concave and convex portions of a sensing target units and a magnetic filed detecting sections is changed among a plurality of setting values. Then, the magnetic filed detecting sections 3, 5 obtain detection waveforms 201, 202 in every setting values of the sensing gap length. Next, an intersection point level value AG0 obtained by superimposing the plurality of detection waveforms in phase is calculated. Then, a threshold value VTH is adjusted so as to agree with the calculated intersection point level value AG0.
摘要翻译：本发明提供了一种磁传感器调节方法，其无论在不同磁传感器产品之间或在一个磁传感器产品中可能发生的感测间隙长度的波动如何，都可以令人满意地感测感测目标是准确的，并且可以防止发生二值化波形边缘的相位不规则。在磁传感器的磁隙中，在多个设定值之间改变形成在检测对象单元的凹部和凸部之间的感测间隙长度和磁场检测部。然后，磁场检测部3,5在检测间隙长度的各设定值中取得检测波形201,202。接下来，计算通过叠加多个相位检测波形而获得的交点电平值AG0。然后，调整阈值VTH，使其与计算出的交点电平值AG0一致。

14. 发明授权

US5851851A Method for fabricating a semiconductor acceleration sensor 失效
标题翻译：半导体加速度传感器的制造方法
公开(公告)号：US5851851A
公开(公告)日：1998-12-22
申请号：US399342
申请日：1995-03-06
申请人： Hirofumi Uenoyama , Masakazu Kanosue , Kenichi Ao , Yasutoshi Suzuki
发明人： Hirofumi Uenoyama , Masakazu Kanosue , Kenichi Ao , Yasutoshi Suzuki
IPC分类号： G01P15/08 , G01P15/12 , H01L21/78
CPC分类号： G01P15/0802 , G01P15/124 , G01P2015/0814
摘要： It is an object to provide a method of fabrication for a semiconductor acceleration sensor which can prevent destruction of a movable portion during dicing. A sacrificial layer composed of silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the sacrificial layer. A polyimide film is applied on the movable member at room temperature and heated to approximately 350.degree. C. to harden. The movable member is supported by this polyimide film. Accordingly, etching liquid penetration holes are formed on the polyimide film. Further, the sacrificial layer disposed between the movable member and the silicon substrate is etched away by means of dipping the silicon substrate into hydrofluoric acid-based etching liquid. Thereafter, the silicon substrate is dipped into demineralized water to replace the etching liquid with demineralized water, and subsequently the silicon substrate is dried. Accordingly, the silicon substrate is diced and thereafter the polyimide film is etched away by O.sub.2 ashing.
摘要翻译：本发明的目的是提供一种半导体加速度传感器的制造方法，其可以防止在切割期间可动部分的破坏。在硅衬底上形成由氧化硅膜构成的牺牲层，在牺牲层上形成由多晶硅构成的可动构件。将聚酰亚胺膜在室温下涂布在可动件上并加热至约350℃以硬化。可动构件由该聚酰亚胺膜支撑。因此，在聚酰亚胺膜上形成蚀刻液体穿透孔。此外，通过将硅衬底浸入氢氟酸蚀刻液中，设置在可移动部件和硅衬底之间的牺牲层被蚀刻掉。此后，将硅衬底浸入软化水中以用软化水代替蚀刻液，随后将硅衬底干燥。因此，对硅衬底进行切割，然后通过氧化物灰蚀蚀刻掉聚酰亚胺膜。

15. 发明授权

US5627397A Semiconductor acceleration sensor with source and drain regions 失效
标题翻译：具有源极和漏极区域的半导体加速度传感器
公开(公告)号：US5627397A
公开(公告)日：1997-05-06
申请号：US402949
申请日：1995-03-13
申请人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama , Kenichi Nara
发明人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama , Kenichi Nara
IPC分类号： G01P1/00 , G01P15/12 , H01L29/84 , H01L29/82
CPC分类号： G01P15/124 , G01P1/006 , Y10S73/01
摘要： A semiconductor acceleration sensor according to the present invention performs acceleration detection by means of detecting increase or decrease in electrical current flowing between fixed electrodes formed on a semiconductor substrate taking a movable section in a movable state supported on the semiconductor substrate as a gate electrode. Two transistor structures are utilized in this detection. Current between fixed electrodes in one transistor structure increases when the movable section is subjected to acceleration and is displaced. At that time, current between fixed electrodes in the other transistor structure decreases. These two transistor structures are disposed proximately. By means of this proximate disposition, fluctuations in characteristics of both transistors are reduced, and by means of acceleration detection by differential type, temperature characteristics of the two transistors can be canceled favorably.
摘要翻译：根据本发明的半导体加速度传感器通过检测形成在半导体衬底上的固定电极之间的电流的增加或减少来执行加速度检测，该半导体衬底以可移动状态支撑在作为栅电极的半导体衬底上的可移动状态。在该检测中使用两个晶体管结构。一个晶体管结构中的固定电极之间的电流在可移动部分受到加速并被移位时增加。此时，另一晶体管结构中的固定电极之间的电流降低。这两个晶体管结构靠近地设置。通过这种接近的配置，两个晶体管的特性波动减小，并且通过差分类型的加速度检测，可以有利地消除两个晶体管的温度特性。

16. 发明授权

US5551586A Method for manufacturing an electromagnetic conversion device and a displacement detector which uses an electromagnetic conversion device 失效
标题翻译：一种使用电磁转换装置的电磁转换装置和位移检测器的制造方法
公开(公告)号：US5551586A
公开(公告)日：1996-09-03
申请号：US293966
申请日：1994-08-24
申请人： Hirofumi Uenoyama , Kenichi Ao , Yasutoshi Suzuki , Yoshimi Yoshino , Motofumi Suzuki
发明人： Hirofumi Uenoyama , Kenichi Ao , Yasutoshi Suzuki , Yoshimi Yoshino , Motofumi Suzuki
IPC分类号： G01B7/00 , C23C28/00 , G01D5/14 , G01D5/16 , G01D5/18 , G01P3/487 , G01R33/09 , H01L27/22 , B44C1/22 , C23F1/00 , H01L21/00
CPC分类号： G01D5/145 , B82Y25/00 , C23C28/00 , G01P3/487 , G01R33/093 , H01L27/22
摘要： A method of manufacturing a magneto-electric conversion device having a large rate of change of magnetic resistance and which is easy to position with respect to a magnetized surface, and a moving subject displacement detector using a magneto-electric conversion device manufactured by that method. A magnet which rotates together with the rotation of a drive gear is magnetized in alternately differing north and south poles, arranged in an equal sized section from a center portion thereof. An IC chip is positioned opposite to and at a distance from the magnetized surface of the magnet. Magneto-electric conversion devices are located on the IC chip. These magneto-electric conversion devices are formed by repeated alternate depositions, onto a surface of a single-crystal silicon substrate, of magnetic cobalt films having a thickness of several to several tens of angstroms and non-magnetic copper films having a thickness of several to several tens of angstroms.
摘要翻译：一种制造磁阻变化率大且相对于磁化面容易定位的磁电转换装置的方法，以及使用该方法制造的磁电转换装置的移动体位移检测器。与驱动齿轮的旋转一起旋转的磁体被磁化为交替不同的北极和南极，其中心部分以相同的尺寸设置。 IC芯片位于与磁体的磁化表面相对且距离磁化表面一定距离处。磁电转换装置位于IC芯片上。这些磁电转换装置通过重复交替沉积形成在单晶硅衬底的表面上，具有几个至几十埃厚度的磁性钴膜和非磁性铜膜，其厚度为几个至几十几十埃。

17. 发明授权

US08130115B2 Signal processing circuit for rotation detecting device 有权
标题翻译：旋转检测装置的信号处理电路
公开(公告)号：US08130115B2
公开(公告)日：2012-03-06
申请号：US12507916
申请日：2009-07-23
申请人： Norihiro Kurumado , Hiroshi Okada , Nobukazu Oba , Hirofumi Uenoyama
发明人： Norihiro Kurumado , Hiroshi Okada , Nobukazu Oba , Hirofumi Uenoyama
IPC分类号： G08B21/00
CPC分类号： G01P13/045 , G01D5/24428 , G01D5/2451
摘要： In the normal rotation direction, a change in the main sensing signal caused by a front edge is defined as a signal change caused by an effective edge, and a change in the main sensing signal caused by a back edge is defined as a signal change caused by an ineffective edge. In the reverse direction, a change in the main sensing signal caused by the back edge is defined as a signal change caused by an effective edge, and a change caused by a front edge is defined as a signal change caused by an ineffective edge. Regardless of the rotation direction, a detection signal generating circuit generates a detection signal including falling-edge changes and rising edge changes caused by the effective edge and ineffective edge respectively. When the direction is changed, the signal change on the detection signal is prohibited. As a result, gear tooth detection discrepancies are prevented.
摘要翻译：在正常旋转方向上，由前沿引起的主感测信号的变化被定义为由有效边缘引起的信号变化，并且由后沿引起的主感测信号的变化被定义为引起的信号变化由无效的边缘。在相反方向上，由后沿引起的主感测信号的变化被定义为由有效边缘引起的信号变化，并且由前沿引起的变化被定义为由无效边缘引起的信号变化。不管旋转方向如何，检测信号发生电路分别产生包括下降沿变化和由有效边缘和无效边缘引起的上升沿变化的检测信号。当方向改变时，检测信号上的信号变化被禁止。结果，防止齿轮齿检测差异。

18. 发明申请

US20100019917A1 SIGNAL PROCESSING CIRCUIT FOR ROTATION DETECTING DEVICE 有权
标题翻译：用于旋转检测装置的信号处理电路
公开(公告)号：US20100019917A1
公开(公告)日：2010-01-28
申请号：US12507916
申请日：2009-07-23
申请人： Norihiro Kurumado , Hiroshi Okada , Nobukazu Oba , Hirofumi Uenoyama
发明人： Norihiro Kurumado , Hiroshi Okada , Nobukazu Oba , Hirofumi Uenoyama
IPC分类号： G08B21/00
CPC分类号： G01P13/045 , G01D5/24428 , G01D5/2451
摘要： In the normal rotation direction, a change in the main sensing signal caused by a front edge is defined as a signal change caused by an effective edge, and a change in the main sensing signal caused by a back edge is defined as a signal change caused by an ineffective edge. In the reverse direction, a change in the main sensing signal caused by the back edge is defined as a signal change caused by an effective edge, and a change caused by a front edge is defined as a signal change caused by an ineffective edge. Regardless of the rotation direction, a detection signal generating circuit generates a detection signal including falling-edge changes and rising edge changes caused by the effective edge and ineffective edge respectively. When the direction is changed, the signal change on the detection signal is prohibited. As a result, gear tooth detection discrepancies are prevented.
摘要翻译：在正常旋转方向上，由前沿引起的主感测信号的变化被定义为由有效边缘引起的信号变化，并且由后沿引起的主感测信号的变化被定义为引起的信号变化由无效的边缘。在相反方向上，由后沿引起的主感测信号的变化被定义为由有效边缘引起的信号变化，并且由前沿引起的变化被定义为由无效边缘引起的信号变化。不管旋转方向如何，检测信号发生电路分别产生包括下降沿变化和由有效边缘和无效边缘引起的上升沿变化的检测信号。当方向改变时，检测信号上的信号变化被禁止。结果，防止齿轮齿检测差异。

19. 发明授权

US07078238B2 Method for manufacturing magnetic sensor 失效
公开(公告)号：US07078238B2
公开(公告)日：2006-07-18
申请号：US10458631
申请日：2003-06-11
申请人： Yuichiro Murata , Inao Toyoda , Yasutoshi Suzuki , Hirofumi Uenoyama , Toshihisa Suzuki , Osamu Mochizuki , Kiyoshi Natsume
发明人： Yuichiro Murata , Inao Toyoda , Yasutoshi Suzuki , Hirofumi Uenoyama , Toshihisa Suzuki , Osamu Mochizuki , Kiyoshi Natsume
IPC分类号： H01L21/00
CPC分类号： B82Y25/00 , G01R33/093 , H01L27/22
摘要： Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.

20. 发明授权

US06734671B2 Magnetic sensor and manufacturing method therefor 有权
标题翻译：磁传感器及其制造方法
公开(公告)号：US06734671B2
公开(公告)日：2004-05-11
申请号：US10091592
申请日：2002-03-07
申请人： Yuichiro Murata , Inao Toyoda , Yasutoshi Suzuki , Hirofumi Uenoyama , Toshihisa Suzuki , Osamu Mochizuki , Kiyoshi Natsume
发明人： Yuichiro Murata , Inao Toyoda , Yasutoshi Suzuki , Hirofumi Uenoyama , Toshihisa Suzuki , Osamu Mochizuki , Kiyoshi Natsume
IPC分类号： G01R3309
CPC分类号： B82Y25/00 , G01R33/093 , H01L27/22
摘要： Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.
摘要翻译：在由硅制成的衬底的绝缘表面上形成磁阻器件。这些器件通过使用形成在衬底表面上的布线层的绝缘膜串联连接。形成用于钝化的绝缘膜以覆盖器件和布线层。通过有机膜在钝化绝缘膜上形成Ni-Fe合金的磁屏蔽层，用于缓解热应力以覆盖其中一个器件。在从晶片去除包含磁阻器件和其他部件的传感器芯片之后，通过热处理将芯片通过Ag糊层结合到引线框架。优选地，磁屏蔽层由Ni含量为69％以下的Ni-Fe合金制成。

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