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11. 发明授权

US08227275B2 Method to form semiconductor laser diode with mesa structure buried by current blocking layer 有权
标题翻译：用电流阻挡层掩埋的台面结构形成半导体激光二极管的方法
公开(公告)号：US08227275B2
公开(公告)日：2012-07-24
申请号：US12692177
申请日：2010-01-22
申请人： Tomokazu Katsuyama
发明人： Tomokazu Katsuyama
IPC分类号： H01L27/15 , H01L33/00 , H01S3/16
CPC分类号： H01S5/227 , B82Y20/00 , H01L21/02543 , H01L21/02609 , H01S5/12 , H01S5/2086 , H01S5/2201 , H01S5/2206 , H01S5/2223 , H01S5/2275 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/34306 , H01S2304/04
摘要： A method to form a an LD with the buried mesa type is disclosed, in which the n-type current blocking layer is stably kept with a distance to the active layer in the buried mesa. The method of the invention includes a step to form the mesa by iterating the RIE and the ashing to obtain in a mesa side a steep edge with the (110) surface. A wet-etching process subsequent to the iterative etching and ashing removes residuals left on the mesa side. Then, the growth of the current blocking layer shows two modes of the horizontal growth of the (110) surface and the vertical growth of the (001) surface comparably.
摘要翻译：公开了一种形成具有埋地台面型的LD的方法，其中n型电流阻挡层在埋入台面中稳定地保持与活性层的距离。本发明的方法包括通过迭代RIE和灰化以在台面中获得具有（110）表面的陡峭边缘来形成台面的步骤。在迭代蚀刻和灰化之后的湿蚀刻工艺去除留在台面侧的残留物。然后，电流阻挡层的生长显示（110）表面的水平生长和（001）表面的垂直生长的两种模式相当。

12. 发明申请

US20090117676A1 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US20090117676A1
公开(公告)日：2009-05-07
申请号：US11902781
申请日：2007-09-25
申请人： Tomokazu Katsuyama
发明人： Tomokazu Katsuyama
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01S5/0265 , B82Y20/00 , G02F1/015 , G02F1/01708 , H01S5/12 , H01S5/2224 , H01S5/2275 , H01S5/34306
摘要： A method of fabricating a semiconductor optical device is disclosed. This semiconductor optical device includes first and second optical semiconductor elements. This method comprises the steps of: growing, in a metal-organic vapor phase deposition reactor, plural semiconductor layers for the first semiconductor optical element on a primary surface of a substrate which has first and second areas for the first semiconductor optical element and the second optical semiconductor element, respectively; forming an insulating mask on the plural semiconductor layers and the first area; etching the plural semiconductor layers by use of the insulating mask to form a semiconductor portion having an end face; growing a layer of a first semiconductor on the second area and deposit of the first semiconductor on the end face in the reactor by use of the insulating mask; supplying etchant for etching the first semiconductor to remove at least a part of the deposit of the first semiconductor on the end face by use of the insulating mask; and after removing the deposit of the first semiconductor, growing a layer of a second semiconductor for the second optical element on the second area in the reactor by use of the insulating mask.
摘要翻译：公开了制造半导体光学器件的方法。该半导体光学器件包括第一和第二光学半导体元件。该方法包括以下步骤：在金属 - 有机气相沉积反应器中生长用于第一半导体光学元件的第一半导体光学元件的第一和第二区域的第一半导体光学元件的主表面上的多个半导体层，光半导体元件; 在所述多个半导体层和所述第一区域上形成绝缘掩模; 通过使用绝缘掩模蚀刻多个半导体层以形成具有端面的半导体部分; 在第二区域上生长第一半导体层，并且通过使用绝缘掩模将第一半导体沉积在反应器的端面上; 提供用于蚀刻第一半导体的蚀刻剂，以通过使用绝缘掩模去除端面上的第一半导体的沉积物的至少一部分; 并且在去除第一半导体的沉积物之后，通过使用绝缘掩模在反应器的第二区域上生长用于第二光学元件的第二半导体层。

13. 发明申请

US20080003704A1 Integrated optical device and fabrication method thereof 失效
标题翻译：集成光学元件及其制造方法
公开(公告)号：US20080003704A1
公开(公告)日：2008-01-03
申请号：US11806067
申请日：2007-05-29
申请人： Tomokazu Katsuyama
发明人： Tomokazu Katsuyama
IPC分类号： H01L21/18 , H01L21/66
CPC分类号： H01L22/26 , B82Y20/00 , H01L27/15 , H01S5/0265 , H01S5/12 , H01S5/34306
摘要： An integrated optical device comprising a first semiconductor optical element provided on a first region of the main face of a substrate and a second semiconductor optical element provided on a second region and optically coupled to the first semiconductor optical element is fabricated. A first III-V compound semiconductor layer containing Al element is formed on the main face. A second III-V compound semiconductor layer for forming the first semiconductor optical element is then formed on the first III-V compound semiconductor layer. An etching mask M is formed on the first region. The end point of the dry etching is detected by using the etching mask M to dry-etch the second III-V compound semiconductor layer while detecting Al element. The first semiconductor optical element is thus formed. The second semiconductor optical element is formed on the second region.
摘要翻译：一种集成光学器件，其包括设置在基板的主面的第一区域上的第一半导体光学元件和设置在第二区域上并光学耦合到第一半导体光学元件的第二半导体光学元件。在主面上形成含有Al元素的第一III-V族化合物半导体层。然后在第一III-V族化合物半导体层上形成用于形成第一半导体光学元件的第二III-V族化合物半导体层。在第一区域上形成蚀刻掩模M. 通过使用蚀刻掩模M来检测干蚀刻的终点，以在检测Al元素的同时对第二III-V化合物半导体层进行干法蚀刻。由此形成第一半导体光学元件。第二半导体光学元件形成在第二区域上。

14. 发明授权

US06791159B2 Optical module 失效
公开(公告)号：US06791159B2
公开(公告)日：2004-09-14
申请号：US10452938
申请日：2003-06-03
申请人： Akihiro Moto , Tomokazu Katsuyama
发明人： Akihiro Moto , Tomokazu Katsuyama
IPC分类号： H01L2900
CPC分类号： H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2223/665 , H01L2224/05554 , H01L2224/45014 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48195 , H01L2224/49113 , H01L2924/00014 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/1423 , H01L2924/19041 , H01L2924/19042 , H01L2924/30107 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： The present invention reduces the capacitance components of pads to improve high frequency characteristics. An optical module includes a light emitting element having an electrode to which a bias current is supplied, an interconnect substrate on which an interconnect pattern is formed to supply the bias current, and a ferrite bead inductor having one terminal connected to a pad connected to the electrode using a bonding wire and the other terminal connected to a pad as the interconnect pattern.

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