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11. 发明申请

US20130019749A1 Method for Recovering High-Value Components from Waste Gas Streams 有权
标题翻译：从废气流中回收高价值成分的方法
公开(公告)号：US20130019749A1
公开(公告)日：2013-01-24
申请号：US13359053
申请日：2012-01-26
申请人： Jeffrey Raymond Hufton , Thomas Stephen Farris , Timothy Christopher Golden , Eugene Joseph Karwacki, JR.
发明人： Jeffrey Raymond Hufton , Thomas Stephen Farris , Timothy Christopher Golden , Eugene Joseph Karwacki, JR.
IPC分类号： B01D53/04
CPC分类号： B01D53/02 , B01D2253/108 , B01D2256/10 , B01D2256/16 , B01D2256/18 , B01D2257/108 , B01D2257/11 , B01D2258/0216 , B01D2259/40083 , B01D2259/455 , C01B23/0052 , C01B2210/0037 , C01B2210/0046
摘要： Method for recovering a desired component from a waste gas comprising (a) at an operating facility, introducing a waste gas comprising the desired component and one or more undesired components into an adsorber containing adsorbent material selective for the desired component, adsorbing at least a portion of the desired component therein, (b) terminating flow of waste gas into the adsorber; and (c) recovering and concentrating the desired component by either (1) isolating the adsorber, transporting the adsorber to a central processing facility, or (2) withdrawing from the adsorber an intermediate gas enriched in the desired component, compressing the intermediate gas and storing it in a vessel, isolating the vessel, transporting the vessel to a central processing facility to provide a concentrated product further enriched in the desired component.
摘要翻译：用于从废气中回收所需组分的方法，包括（a）在操作设施处，将包含所需组分的废气和一种或多种不需要的组分引入含有对所需组分有选择性的吸附材料的吸附剂中，吸附至少一部分的（b）终止废气进入吸附器的流动; （c）通过（1）分离吸附器，将吸附器输送到中央处理设备来回收和浓缩所需组分，或者（2）从吸附器抽出富含所需组分的中间气体，压缩中间气体和将其储存在容器中，分离容器，将容器运输到中央处理设备以提供进一步富集所需组分的浓缩产物。

12. 发明申请

US20110171583A1 Process Solutions Containing Surfactants 审中-公开
标题翻译：含有表面活性剂的工艺解决方案
公开(公告)号：US20110171583A1
公开(公告)日：2011-07-14
申请号：US12959067
申请日：2010-12-02
申请人： Peng Zhang , Danielle Megan King Curzi , Eugene Joseph Karwacki, JR. , Leslie Cox Barber
发明人： Peng Zhang , Danielle Megan King Curzi , Eugene Joseph Karwacki, JR. , Leslie Cox Barber
IPC分类号： G03F7/20 , G03F7/40
CPC分类号： G03F7/32 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/322 , G03F7/38 , G03F7/40 , G03F7/425
摘要： Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain embodiments, the process solution may reduce post-development defects such as pattern collapse or line width roughness when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of defects such as pattern collapse and/or line width roughness on a plurality of photoresist coated substrates employing the process solution of the present invention.
摘要翻译：使用包含一种或多种表面活性剂的工艺溶液来减少半导体器件制造中的缺陷数量。在某些实施方案中，当在图案化光致抗蚀剂层的显影期间或之后，当用作冲洗溶液时，所述工艺溶液可以减少显影后缺陷，例如图案塌陷或线宽粗糙度。还公开了一种使用本发明的工艺溶液来减少多个光致抗蚀剂涂覆的基板上的图案塌陷和/或线宽粗糙度等缺陷的数量的方法。

13. 发明申请

US20090054674A1 Mechanical Enhancement of Dense and Porous Organosilicate Materials by UV Exposure 有权
标题翻译：通过紫外线曝光对密集和多孔有机硅酸盐材料的机械增强
公开(公告)号：US20090054674A1
公开(公告)日：2009-02-26
申请号：US12262879
申请日：2008-10-31
申请人： Aaron Scott Lukas , Mark Leonard O'Neill , Jean Louise Vincent , Raymond Nicholas Vrtis , Mark Daniel Bitner , Eugene Joseph Karwacki, JR.
发明人： Aaron Scott Lukas , Mark Leonard O'Neill , Jean Louise Vincent , Raymond Nicholas Vrtis , Mark Daniel Bitner , Eugene Joseph Karwacki, JR.
IPC分类号： C07F7/18 , C23C16/56
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/56 , H01L21/02203 , H01L21/02274 , H01L21/02348 , H01L21/3105 , H01L21/31695
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.
摘要翻译：当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。在本发明的一个方面，将有机硅酸盐玻璃膜暴露于紫外光源，其中曝光后的膜与其相比具有至少10％或更大的机械性能（即，材料硬度和弹性模量）的改善沉积膜。

14. 发明申请

US20090008426A1 Addition of D2 to H2 to Detect and Calibrate Atomic Hydrogen Formed By Dissociative Electron attachment 审中-公开
标题翻译：添加D2至H2以检测和校准通过分离电子附着形成的原子氢
公开(公告)号：US20090008426A1
公开(公告)日：2009-01-08
申请号：US12233678
申请日：2008-09-19
申请人： Chun Christine Dong , Eugene Joseph Karwacki, JR. , Richard E. Patrick
发明人： Chun Christine Dong , Eugene Joseph Karwacki, JR. , Richard E. Patrick
IPC分类号： B23K37/00
CPC分类号： B23K1/206 , H01L2924/0002 , H05K3/3489 , H01L2924/00
摘要： A method of detecting and calibrating dry fluxing metal surfaces of one or more components to be soldered by electron attachment using a gas mixture of reducing gas comprising hydrogen and deuterium, comprising the steps of: a) providing one or more components to be soldered which are connected to a first electrode as a target assembly; b) providing a second electrode adjacent the target assembly; c) providing a gas mixture comprising a reducing gas comprising hydrogen and deuterium between the first and second electrodes; d) providing a direct current (DC) voltage to the first and second electrodes to form an emission current between the electrodes and donating electrons to the reducing gas to form negatively charged ionic reducing gas and molecules of hydrogen bonded to deuterium; e) contacting the target assembly with the negatively charged ionic reducing gas and reducing oxides on the target assembly. Related apparatus is also disclosed.
摘要翻译：一种通过使用包括氢和氘的还原气体的气体混合物通过电子附着来检测和校准要焊接的一种或多种组分的干熔剂金属表面的方法，包括以下步骤：a）提供一种或多种待焊接的组分，连接到作为目标组件的第一电极; b）提供邻近目标组件的第二电极; c）在所述第一和第二电极之间提供包含包含氢和氘的还原气体的气体混合物; d）向所述第一和第二电极提供直流（DC）电压以在所述电极之间形成发射电流并且将电子供给到所述还原气体以形成带负电荷的离子还原气体和键合到氘的氢分子; e）使目标组件与负电荷的离子还原气体和目标组件上的还原氧化物接触。还公开了相关装置。

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