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11. 发明申请

US20050077593A1 WIRING PROTECTION ELEMENT FOR LASER DELETED TUNGSTEN FUSE 失效
标题翻译：用于激光去除的TUNGSTEN保险丝的接线保护元件
公开(公告)号：US20050077593A1
公开(公告)日：2005-04-14
申请号：US10605617
申请日：2003-10-14
申请人： William Motsiff , Christopher Muzzy
发明人： William Motsiff , Christopher Muzzy
IPC分类号： H01L23/525 , H01L27/10
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A structure and associated method for protecting an electrical structure during a fuse link deletion by focused radiation. The structure comprises a fuse element, a protection plate, a first dielectric layer, and a second dielectric layer. The structure is formed within a semiconductor device. The protection plate is formed within the first dielectric layer using a damascene process. The second dielectric layer is formed over the protection plate and the first dielectric layer. The fuse element is formed over the second dielectric layer. The fuse element is adapted to be cut with a laser beam. The dielectric constant of the second dielectric layer is greater than the dielectric constant of the first dielectric layer. The protection plate is adapted to shield the first dielectric layer from energy from the laser beam.
摘要翻译：一种用于通过聚焦辐射在熔断体缺失期间保护电气结构的结构和相关方法。该结构包括熔丝元件，保护板，第一电介质层和第二电介质层。该结构形成在半导体器件内。使用镶嵌工艺在第一介电层内形成保护板。第二电介质层形成在保护板和第一介电层上。熔丝元件形成在第二介电层上。熔丝元件适于用激光束切割。第二电介质层的介电常数大于第一介电层的介电常数。保护板适于屏蔽来自激光束的能量的第一介电层。

12. 发明申请

US20050067673A1 ADJUSTABLE SELF-ALIGNED AIR GAP DIELECTRIC FOR LOW CAPACITANCE WIRING 有权
标题翻译：用于低电容接线的可调自对准的气隙电介质
公开(公告)号：US20050067673A1
公开(公告)日：2005-03-31
申请号：US10605440
申请日：2003-09-30
申请人： Robert Geffken , William Motsiff
发明人： Robert Geffken , William Motsiff
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532 , H01L27/082
CPC分类号： H01L21/76831 , H01L21/76811 , H01L21/7682 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An adjustable self aligned low capacitance integrated circuit air gap structure comprises a first interconnect adjacent a second interconnect on an interconnect level, spacers formed along adjacent sides of the first and second interconnects, and an air gap formed between the first and second interconnects. The air gap extends above an upper surface of at least one of the first and second interconnects and below a lower surface of at least one of the first and second interconnects, and the distance between the spacers defines the width of the air gap. The air gap is self-aligned to the adjacent sides of the first and second interconnects.
摘要翻译：可调整的自对准低电容集成电路气隙结构包括邻近互连层上的第二互连的第一互连，沿着第一和第二互连的相邻侧形成的隔离物，以及形成在第一和第二互连之间的气隙。空气间隙在第一和第二互连中的至少一个的上表面上方延伸并且在第一和第二互连中的至少一个互连的下表面之下，并且间隔件之间的距离限定气隙的宽度。气隙与第一和第二互连的相邻侧自对准。

13. 发明申请

US20050051868A1 Method of closing an antifuse 失效
标题翻译：关闭反熔丝的方法
公开(公告)号：US20050051868A1
公开(公告)日：2005-03-10
申请号：US10971238
申请日：2004-10-22
申请人： William Motsiff , William Tonti , Richard Williams
发明人： William Motsiff , William Tonti , Richard Williams
IPC分类号： H01L23/525 , H01L29/00
CPC分类号： H01L23/5252 , H01L23/5254 , H01L2924/0002 , H01L2924/00
摘要： A structure and method for providing an antifuse which is closed by laser energy with an electrostatic assist. Two or more metal segments are formed over a semiconductor structure with an air gap or a porous dielectric between the metal segments. Pulsed laser energy is applied to one or more of the metal segments while a voltage potential is applied between the metal segments to create an electrostatic field. The pulsed laser energy softens the metal segment, and the electrostatic field causes the metal segments to move into contact with each other. The electrostatic field reduces the amount of laser energy which must be applied to the semiconductor structure to close the antifuse.
摘要翻译：一种用于提供通过静电辅助由激光能量闭合的反熔丝的结构和方法。在半导体结构之间形成两个或更多个金属段，在金属段之间具有气隙或多孔电介质。将脉冲激光能量施加到一个或多个金属片段，同时在金属片段之间施加电压电位以产生静电场。脉冲激光能量软化金属片段，静电场使金属片段彼此接触。静电场减少必须施加到半导体结构以关闭反熔丝的激光能量的量。

14. 发明申请

US20080026566A1 DUAL DAMASCENE INTERCONNECT STRUCTURES HAVING DIFFERENT MATERIALS FOR LINE AND VIA CONDUCTORS 有权
标题翻译：具有不同材料的双线性互连结构用于线路和通道导体
公开(公告)号：US20080026566A1
公开(公告)日：2008-01-31
申请号：US11847657
申请日：2007-08-30
申请人： Jeffrey Gambino , Edward Cooney , Anthony Stamper , William Motsiff , Michael Lane , Andrew Simon
发明人： Jeffrey Gambino , Edward Cooney , Anthony Stamper , William Motsiff , Michael Lane , Andrew Simon
IPC分类号： H01L21/4763
CPC分类号： H01L21/76811 , H01L21/76807 , H01L21/76808 , H01L21/76813 , H01L21/76843 , H01L21/76846 , H01L21/76865 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Methods are disclosed for forming dual damascene back-end-of-line (BEOL) interconnect structures using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.
摘要翻译：公开了用于形成双镶嵌后端（BEOL）互连结构的方法，其使用与用于线路导体的那些不同的通孔或螺柱的材料，或者使用不同于所使用的通孔衬垫的材料用于沟槽衬垫，或者具有不同于沟槽衬套的通孔衬垫厚度。优选地，在通孔中使用厚的难熔金属以改善机械强度，同时仅在沟槽中使用薄的难熔金属来提供低电阻。

15. 发明申请

US20070018280A1 Antifuse structure and system for closing thereof 失效
标题翻译：防腐结构及其闭合系统
公开(公告)号：US20070018280A1
公开(公告)日：2007-01-25
申请号：US11527343
申请日：2006-09-26
申请人： William Motsiff , William Tonti , Richard Williams
发明人： William Motsiff , William Tonti , Richard Williams
IPC分类号： H01L29/00 , H01L21/326
CPC分类号： H01L23/5252 , H01L23/5254 , H01L2924/0002 , H01L2924/00
摘要： A structure and method for providing an antifuse which is closed by laser energy with an electrostatic assist. Two or more metal segments are formed over a semiconductor structure with an air gap or a porous dielectric between the metal segments. Pulsed laser energy is applied to one or more of the metal segments while a voltage potential is applied between the metal segments to create an electrostatic field. The pulsed laser energy softens the metal segment, and the electrostatic field causes the metal segments to move into contact with each other. The electrostatic field reduces the amount of laser energy which must be applied to the semiconductor structure to close the antifuse.
摘要翻译：一种用于提供通过静电辅助由激光能量闭合的反熔丝的结构和方法。在半导体结构之间形成两个或更多个金属段，在金属段之间具有气隙或多孔电介质。将脉冲激光能量施加到一个或多个金属片段，同时在金属片段之间施加电压电位以产生静电场。脉冲激光能量软化金属片段，静电场使金属片段彼此接触。静电场减少必须施加到半导体结构以关闭反熔丝的激光能量的量。

16. 发明申请

US20050245098A1 METHOD AND APPARATUS FOR SELECTIVELY ALTERING DIELECTRIC PROPERTIES OF LOCALIZED SEMICONDUCTOR DEVICE REGIONS 有权
标题翻译：用于选择性地改变局部化半导体器件区域的介电性质的方法和装置
公开(公告)号：US20050245098A1
公开(公告)日：2005-11-03
申请号：US10709313
申请日：2004-04-28
申请人： Edward Cooney , William Motsiff
发明人： Edward Cooney , William Motsiff
IPC分类号： H01L21/31 , H01L21/316 , H01L21/336 , H01L21/469 , H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L21/7682 , H01L21/02107 , H01L21/02203 , H01L21/02318 , H01L21/31695 , H01L23/5222 , H01L23/5329 , H01L2224/05093 , H01L2924/01019 , H01L2924/01077
摘要： A method for selectively altering dielectric properties of a semi-conductor device. In an exemplary embodiment, the method includes applying energy to a local region of interest, the local region of interest including a thermally alterable dielectric such that said heating caused by the applied energy causes a dielectric constant of the thermally alterable dielectric to change.
摘要翻译：一种用于选择性地改变半导体器件的介电特性的方法。在示例性实施例中，该方法包括将能量施加到局部感兴趣区域，局部感兴趣区域包括可热改变的电介质，使得由所施加的能量引起的所述加热导致热可变电介质的介电常数发生变化。

17. 发明申请

US20050245068A1 Dual damascene interconnect structures having different materials for line and via conductors 失效
标题翻译：双镶嵌互连结构具有不同的材料用于线路和通孔导体
公开(公告)号：US20050245068A1
公开(公告)日：2005-11-03
申请号：US11174985
申请日：2005-07-05
申请人： Jeffrey Gambino , Edward Cooney , Anthony Stamper , William Motsiff , Michael Lane , Andrew Simon
发明人： Jeffrey Gambino , Edward Cooney , Anthony Stamper , William Motsiff , Michael Lane , Andrew Simon
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： H01L21/76811 , H01L21/76807 , H01L21/76808 , H01L21/76813 , H01L21/76843 , H01L21/76846 , H01L21/76865 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Methods are disclosed for forming dual damascene back-end-of-line (BEOL) interconnect structures using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.
摘要翻译：公开了用于形成双镶嵌后端（BEOL）互连结构的方法，其使用与用于线路导体的那些不同的通孔或螺柱的材料，或者使用不同于所使用的通孔衬垫的材料用于沟槽衬垫，或者具有不同于沟槽衬套的通孔衬垫厚度。优选地，在通孔中使用厚的难熔金属以改善机械强度，同时仅在沟槽中使用薄的难熔金属来提供低电阻。

18. 发明申请

US20050160575A1 INTEGRATION OF HIGH PERFORMANCE COPPER INDUCTORS WITH BOND PADS 有权
标题翻译：高性能铜电感器与BOND PADS的集成
公开(公告)号：US20050160575A1
公开(公告)日：2005-07-28
申请号：US10707896
申请日：2004-01-22
申请人： Jeffrey Gambino , William Motsiff , Erick Walton
发明人： Jeffrey Gambino , William Motsiff , Erick Walton
IPC分类号： H01F41/04 , H01L21/02 , H01L21/3205 , H01L21/60 , H01L21/822 , H01L23/31 , H01L23/52 , H01L23/522 , H01L23/532 , H01L27/04 , H01F7/06 , H05K3/02
CPC分类号： H01L28/10 , H01F41/041 , H01L21/76852 , H01L21/76885 , H01L23/3192 , H01L23/5227 , H01L23/53238 , H01L24/02 , H01L2224/0401 , H01L2224/13022 , H01L2224/13147 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01044 , H01L2924/0105 , H01L2924/01055 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , Y10T29/4902 , Y10T29/49155 , Y10T29/49165 , H01L2924/00
摘要： Integration of high performance copper inductors are provided wherein a tall, Cu laminate spiral inductor is formed at the last metal level, and at the last metal+1 level, with the metal levels being interconnected by a bar via having the same spiral shape as the spiral metal inductors at the last metal level and the last metal+1 level. The invention provides methods for integrating the formation of thick inductors with the formation of bond pads, terminals and interconnect wiring with the last metal+1 wiring. The subject invention uses dielectric deposition, spacer formation, and/or selective deposition of a passivating metal such as CoWP, to passivate a Cu inductor that is formed after the last metal layer.
摘要翻译：提供了高性能铜电感器的集成，其中在最后的金属水平上形成高的Cu层叠螺旋电感器，并且在最后的金属+ 1级上，金属层通过与所述金属层相同的螺旋形状与棒相互连接螺旋金属电感在最后一个金属水平和最后一个金属+ 1水平。本发明提供了将厚电感器的形成与最后的金属+ 1布线形成接合焊盘，端子和互连布线的方法。本发明使用诸如CoWP的钝化金属的电介质沉积，间隔物形成和/或选择性沉积来钝化在最后一个金属层之后形成的Cu电感器。

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