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11. 发明授权

US6153260A Method for heating exhaust gas in a substrate reactor 失效
标题翻译：在衬底反应器中加热废气的方法
公开(公告)号：US6153260A
公开(公告)日：2000-11-28
申请号：US835955
申请日：1997-04-11
申请人： Paul B. Comita , David K. Carlson , Norma B. Riley , Doria W. Fan , Rekha Ranganathan
发明人： Paul B. Comita , David K. Carlson , Norma B. Riley , Doria W. Fan , Rekha Ranganathan
IPC分类号： C23C16/44 , C23C16/455 , C23C16/48 , C30B25/14 , C30B31/16 , H01L21/205 , C23C16/00
CPC分类号： C23C16/4408 , C23C16/4412 , C23C16/481 , C30B25/14 , C30B31/16
摘要： The present invention is a single wafer reactor having a vented lower liner for heating exhaust gas. The apparatus of the present invention includes a reaction chamber. A wafer support member which divides the chamber into an upper and lower portion is positioned within the chamber. A gas outlet for exhausting gas from the chamber has a vent to exhaust gas from the lower portion of the chamber and an exhaust passage opening to exhaust gas from the upper portion of the chamber. Heated inert purge gas is fed from the lower chamber portion through the vent at a rate so as to prevent the deposition gas from condensing in the exhaust passage.
摘要翻译：本发明是具有用于加热废气的排气下衬板的单晶片反应器。本发明的装置包括反应室。将腔室分成上部和下部的晶片支撑构件定位在腔室内。用于从腔室排出气体的气体出口具有从腔室的下部排出的排气和从腔室的上部排出废气的排气通道。加热的惰性吹扫气体以一定的速度从下室部分通过排气口供给，以防止沉积气体在排气通道中冷凝。

12. 发明授权

US6042654A Method of cleaning CVD cold-wall chamber and exhaust lines 失效
标题翻译： CVD冷壁室和排气管的清洗方法
公开(公告)号：US6042654A
公开(公告)日：2000-03-28
申请号：US6463
申请日：1998-01-13
申请人： Paul B. Comita , Hali J. L. Forstner , Rekha Ranganathan
发明人： Paul B. Comita , Hali J. L. Forstner , Rekha Ranganathan
IPC分类号： B01J3/00 , B01J19/00 , C23C16/44 , H01L21/205 , C03C23/00 , B08B5/04
CPC分类号： C23C16/4405
摘要： A method of cleaning post deposition deposits from a processing chamber by providing a chlorine gas (Cl.sub.2), forming chlorine radicals and reacting the chlorine radicals with the deposits.
摘要翻译：一种通过提供氯气（Cl2），从而形成氯自由基并使氯自由基与沉积物反应的方法，从处理室清洗沉积物沉积物。

13. 发明授权

US07758697B2 Silicon-containing layer deposition with silicon compounds 有权
标题翻译：含硅层沉积与硅化合物
公开(公告)号：US07758697B2
公开(公告)日：2010-07-20
申请号：US11969139
申请日：2008-01-03
申请人： Paul B. Comita , Lance A. Scudder , David K. Carlson
发明人： Paul B. Comita , Lance A. Scudder , David K. Carlson
IPC分类号： C30B21/02
CPC分类号： C07F7/0896 , C01B33/04 , C01B33/107 , C07F7/12 , C23C16/24 , C23C16/30
摘要： Methods for depositing a silicon-containing film are described. The methods may include delivering a silicon compound to a surface or a substrate, and reacting the silicon compound to grow the silicon-containing film. The silicon compound may be one or more compounds having a formula selected from the group Si4X8, Si4X10, Si5X10, and Si5X12, where X is independently a hydrogen or halogen.
摘要翻译：描述了沉积含硅膜的方法。所述方法可以包括将硅化合物递送到表面或基底，并使硅化合物反应生长含硅膜。硅化合物可以是一种或多种具有选自Si 4 X 8，Si 4 X 10，Si 5 X 10和Si 5 X 12的式的化合物，其中X独立地是氢或卤素。

14. 发明申请

US20080206888A1 Screening using polarization anisotropy in FRET emissions 失效
标题翻译：在FRET排放中使用偏振各向异性进行筛选
公开(公告)号：US20080206888A1
公开(公告)日：2008-08-28
申请号：US12069724
申请日：2008-02-11
申请人： Steven C. Miller , Paul B. Comita , Christopher B. Shumate , Evan F. Cromwell
发明人： Steven C. Miller , Paul B. Comita , Christopher B. Shumate , Evan F. Cromwell
IPC分类号： G01N33/566 , G01N21/76
CPC分类号： G01N33/542 , G01N2500/00
摘要： Methods and apparatus are described for detecting specific binding between first and second chemical entities. The first chemical entity in association with a first fluorophore is immobilized. The second chemical entity is allowed to bind with the immobilized first chemical entity. The second chemical entity is or becomes coupled to a second fluorophore, which forms a FRET pair with the first fluorophore. The bound chemical entities are exposed to radiation at an excitation frequency for either the first or the second fluorophore, and polarization anisotropy of a FRET fluorescent signal from the bound chemical entities is measured to detect specific binding between the first and second chemical entities. Techniques are also disclosed for detecting whether a FRET interaction is occurring between a first chemical entity including a donor fluorophore and a second chemical entity including an acceptor fluorophore, using simultaneous anisotropy measurements at the wavelengths of the donor and acceptor fluorophores.
摘要翻译：描述了用于检测第一和第二化学实体之间的特异性结合的方法和装置。与第一荧光团相关联的第一化学实体被固定化。允许第二化学实体与固定化的第一化学实体结合。第二化学实体是或连接到与第一荧光团形成FRET对的第二荧光团。结合的化学实体以第一或第二荧光团的激发频率暴露于辐射，并且测量来自结合的化学实体的FRET荧光信号的偏振各向异性以检测第一和第二化学实体之间的特异性结合。还公开了用于检测在包括供体荧光团的第一化学实体和包括受体荧光团的第二化学实体之间是否发生FRET相互作用的技术，其使用在供体和受体荧光团的波长处的同时各向异性测量。

15. 发明授权

US07141378B2 Exploring fluorophore microenvironments 有权
标题翻译：探索荧光团微环境
公开(公告)号：US07141378B2
公开(公告)日：2006-11-28
申请号：US11173814
申请日：2005-07-01
申请人： Steven C. Miller , Paul B. Comita , Evan F. Cromwell , Christopher B. Shumate
发明人： Steven C. Miller , Paul B. Comita , Evan F. Cromwell , Christopher B. Shumate
IPC分类号： C12Q1/68 , G01N33/53
CPC分类号： G01N33/582 , B82Y5/00 , B82Y10/00 , C12Q1/6816 , G01N21/6408 , G01N21/6428 , G01N21/6445 , G01N2021/6419 , G01N2021/6421 , G01N2021/6432 , G01N2021/6441 , G01N2021/6478 , G01N2021/6484 , G01N2201/067 , G01N2201/0697 , G01N2201/0833 , C12Q2563/107 , C12Q2561/119
摘要： Methods, apparatus, and system, implementing and using techniques for detecting a presence of one or more target analytes in particular regions of interest of one or more samples. One or more samples including objects and one or more target analytes are provided. Some of the target analytes are labeled with a fluorophore and are bound to some of the objects in the samples. The samples are illuminated with fluorescence inducing light and fluorescent light is collected from one or more regions of the one or more samples. At least one anisotropy measurement of the samples is performed to identify regions of interest where one or more target analytes are bound to the objects. The collected fluorescent light from the regions of interest is analyzed to determine a presence of target analytes that are bound to the objects in the one or more samples.
摘要翻译：方法，装置和系统，实施和使用用于检测一个或多个样品的特定感兴趣区域中一种或多种目标分析物的存在的技术。提供了一个或多个样品，包括物体和一种或多种目标分析物。一些目标分析物用荧光团标记，并且与样品中的某些对象结合。用荧光诱导光照射样品，并从一个或多个样品的一个或多个区域采集荧光。进行样品的至少一个各向异性测量以识别一个或多个目标分析物与物体结合的感兴趣区域。分析来自感兴趣区域的收集的荧光以确定与一个或多个样品中的物体结合的目标分析物的存在。

16. 发明授权

US06376387B2 Method of sealing an epitaxial silicon layer on a substrate 失效
标题翻译：在衬底上密封外延硅层的方法
公开(公告)号：US06376387B2
公开(公告)日：2002-04-23
申请号：US09350805
申请日：1999-07-09
申请人： David K Carlson , Paul B. Comita , Norma B. Riley , Dale R. Du Bois
发明人： David K Carlson , Paul B. Comita , Norma B. Riley , Dale R. Du Bois
IPC分类号： H01L21302
CPC分类号： H01L21/67167 , C01B13/10 , C30B29/06 , C30B33/005 , H01L21/67017 , H01L21/67201 , H01L21/67745 , Y10S414/139
摘要： According to one aspect of the invention, a method of processing a wafer is provided. The wafer is located in a wafer processing chamber of a system for processing a wafer. A silicon layer is then formed on the wafer while the wafer is located in the wafer processing chamber. The wafer is then transferred from the wafer processing chamber to a loadlock chamber of the system. Communication between the processing chamber and the loadlock chamber is closed off. The wafer is then exposed to ozone gas while located in the loadlock chamber, whereafter the wafer is removed from the loadlock chamber out of the system.
摘要翻译：根据本发明的一个方面，提供了一种处理晶片的方法。晶片位于用于处理晶片的系统的晶片处理室中。然后在晶片上形成硅层，同时晶片位于晶片处理室中。然后将晶片从晶片处理室转移到系统的负载锁定室。处理室和负载锁定室之间的通信被关闭。然后将晶片暴露于臭氧气体，同时位于负载锁定室中，此后将晶片从负载锁定室移出系统外。

17. 发明授权

US5914050A Purged lower liner 失效
标题翻译：清洗下层衬垫
公开(公告)号：US5914050A
公开(公告)日：1999-06-22
申请号：US934920
申请日：1997-09-22
申请人： Paul B. Comita , David K. Carlson , Kimberly E. Klinck , Harold J. Mellen, III
发明人： Paul B. Comita , David K. Carlson , Kimberly E. Klinck , Harold J. Mellen, III
IPC分类号： C23C16/44 , C23C16/48 , H01L21/205 , C23C16/00
CPC分类号： C23C16/4405 , C23C16/4401
摘要： Chemical vapor deposition apparatus 10 which includes a chemical vapor deposition processing chamber 12 having a base ring 18 and upper and lower quartz windows 20 and 22, and a quartz liner 26 lining the base ring 18, wherein a purge channel 46 is formed, in an outer surface of the liner 26, to remove contaminant material from an interface between the base ring 18 and the liner 26.
摘要翻译：化学气相沉积装置10包括具有基环18和上，下石英窗20和22的化学气相沉积处理室12和衬在基环18上的石英衬垫26，其中形成有净化通道46 衬套26的外表面，以从基环18和衬套26之间的界面去除污染物质。

18. 发明授权

US07812956B2 Time dependent fluorescence measurements 有权
标题翻译：时间依赖荧光测量
公开(公告)号：US07812956B2
公开(公告)日：2010-10-12
申请号：US12072047
申请日：2008-02-22
申请人： Evan F. Cromwell , Johann F. Adam , Andrei Brunfeld , Paul B. Comita , Christopher J. Seipert
发明人： Evan F. Cromwell , Johann F. Adam , Andrei Brunfeld , Paul B. Comita , Christopher J. Seipert
IPC分类号： G01N21/55 , G01N21/25 , G01N21/00 , G01N21/64 , G01J3/30 , G01J1/58 , G01J1/10 , F21V9/16 , G21H3/02 , H01J65/06 , H01J65/08
CPC分类号： G01N21/6452 , G01N21/6408 , G01N21/6445 , G01N21/6458 , G01N2021/6484 , G02B21/0048 , G02B21/0068 , G02B21/0076 , G02B21/16
摘要： Methods and apparatus, including computer program products, implementing and using techniques for collecting optical data pertaining to one or more characteristics of a sample. The apparatus has a light source, one or more illumination optical elements, a scanner, one or more collection optical elements, and a device forming an aperture that limits detection of light from the sample. The illumination optical elements direct a light beam from the light source onto the sample. The scanner scans the light beam across the sample. The collection optical elements collect light from the sample and transmit the collected light to a detector. None of the collection optical elements are included among the illumination optical elements. The device forming an aperture limits detection of light from the sample to light associated with a limited vertical depth within the sample, and is one of the collection optical elements.
摘要翻译：方法和装置，包括计算机程序产品，用于收集与样品的一个或多个特征有关的光学数据的实施和使用技术。该装置具有光源，一个或多个照明光学元件，扫描器，一个或多个收集光学元件，以及形成限制来自样品的光的检测的孔径的装置。照明光学元件将来自光源的光束引导到样品上。扫描仪扫描样品上的光束。收集光学元件收集来自样品的光并将收集的光传输到检测器。在照明光学元件中不包括收集光学元件。形成孔径的装置将从样品的光的检测限制到与样品内的有限垂直深度相关联的光，并且是收集光学元件之一。

19. 发明授权

US07645339B2 Silicon-containing layer deposition with silicon compounds 有权
标题翻译：含硅层沉积与硅化合物
公开(公告)号：US07645339B2
公开(公告)日：2010-01-12
申请号：US11549033
申请日：2006-10-12
申请人： Kaushal K. Singh , Paul B. Comita , Lance A. Scudder , David K. Carlson
发明人： Kaushal K. Singh , Paul B. Comita , Lance A. Scudder , David K. Carlson
IPC分类号： C30B21/04
CPC分类号： C07F7/0896 , C01B33/04 , C01B33/107 , C07F7/12 , C23C16/24 , C23C16/30
摘要： Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces. Generally, the silicon carbide blanket layer contains a silicon carbide epitaxial layer selectively deposited on the crystalline surface.
摘要翻译：本发明的实施例涉及在衬底上沉积含硅材料的方法。在一个实例中，提供了一种用于选择性和外延沉积含硅材料的方法，其包括在处理室内定位和加热含有结晶表面和非结晶表面的基底，将基底暴露于含有新戊硅烷的工艺气体中，以及在所述晶体表面上沉积外延层。在另一个实例中，提供了一种用于覆盖沉积含硅材料的方法，其包括定位和加热含有结晶表面的基底和处理室内的特征表面，并将基底暴露于含有新戊硅烷和碳源的工艺气体沉积跨过结晶表面和特征表面的碳化硅毯层。通常，碳化硅覆盖层包含选择性地沉积在晶体表面上的碳化硅外延层。

20. 发明授权

US06833322B2 Apparatuses and methods for depositing an oxide film 失效
公开(公告)号：US06833322B2
公开(公告)日：2004-12-21
申请号：US10273830
申请日：2002-10-17
申请人： Roger N. Anderson , Paul B. Comita , Ann Waldhauer , Norma B. Riley
发明人： Roger N. Anderson , Paul B. Comita , Ann Waldhauer , Norma B. Riley
IPC分类号： H01L2144
CPC分类号： C23C16/4408 , C23C16/402 , C23C16/4585 , C23C16/481 , C23C16/52 , C23C16/54 , H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L21/31612 , H01L21/76254
摘要： Methods and apparatuses for forming an oxide film. The method includes depositing an oxide film on a substrate using a process gas mixture that comprises a silicon source gas, an oxygen gas, and a hydrogen gas, and a process temperature between 800° C. and 1300° C. During the deposition of the oxide film, the process gas mixture comprises less than 6% oxygen, silicon gas, and predominantly hydrogen.

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