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11. 发明授权

US07585773B2 Non-conformal stress liner for enhanced MOSFET performance 失效
标题翻译：非保形应力衬垫，用于增强MOSFET性能
公开(公告)号：US07585773B2
公开(公告)日：2009-09-08
申请号：US11556591
申请日：2006-11-03
申请人： Sunfei Fang , Jun Jung Kim , Thomas Dyer
发明人： Sunfei Fang , Jun Jung Kim , Thomas Dyer
IPC分类号： H01L29/72
CPC分类号： H01L21/823807 , H01L29/7843
摘要： A semiconductor device is provided wherein at least one offset spacer is reduced and a non-conformal stress liner is thereafter deposited. By depositing the non-conformal stress liner in accordance with the present invention in close stress proximity to the FET, the carrier mobility and the performance of said device is significantly enhanced. The present invention is her directed to a method of fabricating said semiconductor device.
摘要翻译：提供半导体器件，其中至少一个偏移间隔物被还原，然后沉积非共形应力衬垫。通过在紧邻FET附近的紧压下沉积根据本发明的非共形应力衬垫，显着提高了所述器件的载流子迁移率和性能。本发明是针对制造所述半导体器件的方法。

12. 发明申请

US20080122003A1 NON-CONFORMAL STRESS LINER FOR ENHANCED MOSFET PERFORMANCE 失效
标题翻译：非稳定应力衬管，用于增强MOSFET性能
公开(公告)号：US20080122003A1
公开(公告)日：2008-05-29
申请号：US11556591
申请日：2006-11-03
申请人： Sunfei Fang , Jun Jung Kim , Thomas Dyer
发明人： Sunfei Fang , Jun Jung Kim , Thomas Dyer
IPC分类号： H01L27/092 , H01L21/336 , H01L29/78
CPC分类号： H01L21/823807 , H01L29/7843
摘要： A semiconductor device is provided wherein at least one offset spacer is reduced and a non-conformal stress liner is thereafter deposited. By depositing the non-conformal stress liner in accordance with the present invention in close stress proximity to the FET, the carrier mobility and the performance of said device is significantly enhanced. The present invention is her directed to a method of fabricating said semiconductor device.
摘要翻译：提供半导体器件，其中至少一个偏移间隔物被还原，然后沉积非共形应力衬垫。通过在紧邻FET附近的紧压下沉积根据本发明的非共形应力衬垫，显着提高了所述器件的载流子迁移率和性能。本发明是针对制造所述半导体器件的方法。

13. 发明申请

US20080041543A1 Process for increasing the basis weight of sheet materials 有权
公开(公告)号：US20080041543A1
公开(公告)日：2008-02-21
申请号：US11818504
申请日：2007-06-14
申请人： Thomas Dyer , Deborah Nickel , Kenneth Zwick , Mike Goulet , Jeffrey Timm , Perry Clough
发明人： Thomas Dyer , Deborah Nickel , Kenneth Zwick , Mike Goulet , Jeffrey Timm , Perry Clough
IPC分类号： B31F1/12
CPC分类号： A61K8/0208 , A61K8/8111 , A61K8/8147 , A61Q19/00 , D21H17/35 , D21H17/37 , D21H19/20 , D21H19/22 , D21H21/146 , D21H21/18 , D21H27/001 , D21H27/005 , D21H27/008
摘要： Sheet-like products are disclosed containing an additive composition. In accordance with the present disclosure, the additive composition is applied to a creping surface. A base sheet is then pressed against the creping surface for contact with the additive composition. The base sheet is then creped from the creping surface causing the additive composition to transfer to the base sheet. In particular, the additive composition is transferred to the base sheet in amounts greater than about 1% by weight, such as from about 2% to about 50% by weight. The additive composition can comprise, for instance, a thermoplastic polymer resin containing an aqueous dispersion, a lotion, a debonder, a softener, or mixtures thereof.

14. 发明申请

US20080000602A1 Wiping products having enhanced cleaning abilities 有权
标题翻译：擦拭具有增强清洁能力的产品
公开(公告)号：US20080000602A1
公开(公告)日：2008-01-03
申请号：US11818529
申请日：2007-06-14
申请人： Thomas Dyer , Michael Lostocco , Deborah Nickel , Troy Runge , Kenneth Zwick , Mike Goulet , Jeffrey Timm , Perry Clough , Michael Rekoske
发明人： Thomas Dyer , Michael Lostocco , Deborah Nickel , Troy Runge , Kenneth Zwick , Mike Goulet , Jeffrey Timm , Perry Clough , Michael Rekoske
IPC分类号： D21H27/00
CPC分类号： C11D17/049 , A61K8/0208 , A61K8/8111 , A61K8/8147 , A61Q19/00 , D21H17/35 , D21H17/37 , D21H19/20 , D21H19/22 , D21H21/146 , D21H21/18 , D21H27/001 , D21H27/005 , D21H27/008 , Y10T428/24405
摘要： Wiping products are disclosed containing an additive composition that enhances the cleaning properties of the product. The additive composition, for instance, comprises an aqueous dispersion containing an alpha-olefin polymer, an ethylene-carboxylic acid copolymer, or mixtures thereof. The alpha-olefin polymer may comprise an interpolymer of ethylene and octene, while the ethylene-carboxylic acid copolymer may comprise ethylene-acrylic acid copolymer. The additive composition may also contain a dispersing agent, such as a fatty acid.
摘要翻译：公开了含有增强产品清洁性能的添加剂组合物的擦拭产品。添加剂组合物例如包含含有α-烯烃聚合物，乙烯 - 羧酸共聚物或其混合物的水分散体。 α-烯烃聚合物可以包含乙烯和辛烯的互聚物，而乙烯 - 羧酸共聚物可以包含乙烯 - 丙烯酸共聚物。添加剂组合物还可以含有分散剂，例如脂肪酸。

15. 发明申请

US20070298552A1 HIGH PERFORMANCE 3D FET STRUCTURES, AND METHODS FOR FORMING THE SAME USING PREFERENTIAL CRYSTALLOGRAPHIC ETCHING 有权
标题翻译：高性能3D FET结构及其使用优选结晶蚀刻形成其的方法
公开(公告)号：US20070298552A1
公开(公告)日：2007-12-27
申请号：US11851464
申请日：2007-09-07
申请人： Thomas Dyer , Haining Yang
发明人： Thomas Dyer , Haining Yang
IPC分类号： H01L21/84
CPC分类号： H01L21/823807 , H01L21/823821 , H01L27/0922 , H01L27/1211 , H01L29/04 , H01L29/66795 , H01L29/7853
摘要： The present invention relates to high performance three-dimensional (3D) field effect transistors (FETs). Specifically, a 3D semiconductor structure having a bottom surface oriented along one of a first set of equivalent crystal planes and multiple additional surfaces oriented along a second, different set of equivalent crystal planes can be used to form a high performance 3D FET with carrier channels oriented along the second, different set of equivalent crystal planes. More importantly, such a 3D semiconductor structure can be readily formed over the same substrate with an additional 3D semiconductor structure having a bottom surface and multiple additional surfaces all oriented along the first set of equivalent crystal planes. The additional 3D semiconductor structure can be used to form an additional 3D FET, which is complementary to the above-described 3D FET and has carrier channels oriented along the first set of equivalent crystal planes.
摘要翻译：本发明涉及高性能三维（3D）场效应晶体管（FET）。具体而言，可以使用具有沿着第一组等效晶面中的一个取向的底表面和沿着第二不同组的等效晶面取向的多个附加表面的3D半导体结构，以形成具有载体通道定向的高性能3D FET 沿着第二个不同组的等效晶面。更重要的是，这种3D半导体结构可以容易地在具有底表面和多个附加表面的附加3D半导体结构的同一衬底上形成，所述另外的三维半导体结构全部沿着第一组等效晶面取向。附加的3D半导体结构可以用于形成附加的3D FET，其与上述3D FET互补，并且具有沿着第一组等效晶面取向的载流子通道。

16. 发明申请

US20070284069A1 PROCESS FOR INCREASING THE BASIS WEIGHT OF SHEET MATERIALS 有权
标题翻译：增加材料基重的方法
公开(公告)号：US20070284069A1
公开(公告)日：2007-12-13
申请号：US11763278
申请日：2007-06-14
申请人： Thomas Dyer , Deborah Nickel , Kenneth Zwick , Mike Goulet , Jeffrey Timm , Perry Clough
发明人： Thomas Dyer , Deborah Nickel , Kenneth Zwick , Mike Goulet , Jeffrey Timm , Perry Clough
IPC分类号： B31F1/12
CPC分类号： D21H25/005 , A47K10/16 , B32B5/22 , D21H13/10 , D21H17/34 , D21H17/37 , D21H19/12 , D21H19/18 , D21H19/20 , D21H21/146 , D21H21/18 , D21H27/002
摘要： Sheet-like products are disclosed containing an additive composition. In accordance with the present disclosure, the additive composition is applied to a creping surface. The additive composition includes at least an aqueous dispersion containing a thermoplastic polymer. A base sheet is then pressed against the creping surface for contact with the additive composition. The base sheet is then creped from the creping surface causing the additive composition to transfer to the base sheet. In particular, the additive composition is transferred to the base sheet in amounts greater than about 1% by weight, such as from about 2% to about 50% by weight. The additive composition may further include a lotion, a debonder, a softener, or mixtures thereof.
摘要翻译：公开了含有添加剂组合物的片状产品。根据本公开，将添加剂组合物施加到起皱表面。所述添加剂组合物至少包含含有热塑性聚合物的水性分散体。然后将基片压在起皱表面上以与添加剂组合物接触。然后将基片从起皱表面起皱，使添加剂组合物转移到基片。特别地，添加剂组合物以大于约1重量％，例如约2重量％至约50重量％的量转移到基材片材。添加剂组合物还可以包括洗剂，脱粘剂，软化剂或其混合物。

17. 发明申请

US20070194387A1 EXTENDED RAISED SOURCE/DRAIN STRUCTURE FOR ENHANCED CONTACT AREA AND METHOD FOR FORMING EXTENDED RAISED SOURCE/DRAIN STRUCTURE 有权
标题翻译：用于增强接触区域的扩展源/排水结构和形成扩展源/排水结构的方法
公开(公告)号：US20070194387A1
公开(公告)日：2007-08-23
申请号：US11307759
申请日：2006-02-21
申请人： Thomas Dyer , Sunfei Fang
发明人： Thomas Dyer , Sunfei Fang
IPC分类号： H01L29/94 , H01L29/76 , H01L31/00
CPC分类号： H01L21/823814 , H01L21/823418 , H01L21/823425 , H01L21/823475 , H01L21/823871 , H01L29/517 , H01L29/66628 , H01L29/7834
摘要： A semiconductor device comprises a gate electrode stack having sidewalls and a top surface with a gate dielectric layer and the gate electrode, and LDD/LDS regions in the substrate aligned with the stack. Conformal L-shaped etch-stop layers with a thickness from about 50 Å to about 200 Å are formed with a vertical leg on the sidewalls of the stack and a horizontal leg reaching over the LDD/LDS regions next to the stack. RSD regions are formed in contact with the substrate aside from the etch-stop layers. The RSD regions cover the horizontal leg of the etch-stop layer and cover at least a portion of the vertical leg of the etch-stop layer on the sidewall of the gate electrode.
摘要翻译：半导体器件包括具有侧壁的栅极电极堆叠和具有栅极电介质层和栅电极的顶表面，并且衬底中的LDD / LDS区域与堆叠对准。形成厚度为约至约200的保形L形蚀刻停止层，其在堆叠的侧壁上具有垂直支腿，并且在堆叠旁边的LDD / LDS区域上形成水平支线。除了蚀刻停止层之外，RSD区域与基板形成接触。 RSD区域覆盖蚀刻停止层的水平支腿并且覆盖栅电极的侧壁上的蚀刻停止层的垂直支腿的至少一部分。

18. 发明申请

US20070137808A1 Treated tissue products having increased strength 有权
标题翻译：经处理的纸巾制品具有增强的强度
公开(公告)号：US20070137808A1
公开(公告)日：2007-06-21
申请号：US11303002
申请日：2005-12-15
申请人： Michael Lostocco , Thomas Dyer , Deborah Nickel , Troy Runge , Jerry Baker , Thomas Shannon
发明人： Michael Lostocco , Thomas Dyer , Deborah Nickel , Troy Runge , Jerry Baker , Thomas Shannon
IPC分类号： D21H27/00 , B31F1/12 , D21H19/20 , D21H17/34 , D21H17/37 , D21H27/02 , D21H21/18
CPC分类号： B32B29/005 , A47K10/16 , B32B5/22 , B32B2307/54 , B32B2317/12 , B32B2432/00 , D21H17/37 , D21H19/20 , D21H21/146 , D21H21/18 , D21H27/002
摘要： Tissue products are disclosed containing an additive composition. The additive composition, for instance, comprises an aqueous dispersion containing an olefin polymer, an ethylene-carboxylic acid copolymer, or mixtures thereof. The olefin polymer may comprise an interpolymer of ethylene and octene, while the ethylene-carboxylic acid copolymer may comprise ethylene-acrylic acid copolymer. The additive composition may also contain a dispersing agent, such as a fatty acid. The additive composition may be incorporated into the tissue web by being combined with the fibers that are used to form the web. Alternatively, the additive composition may be topically applied to the web after the web has been formed. For instance, in one embodiment, the additive composition may be applied to the web as a creping adhesive during a creping operation. The additive composition may improve the strength of the tissue web without substantially affecting the perceived softness of the web in an adverse manner.
摘要翻译：公开了含有添加剂组合物的组织产品。添加剂组合物例如包含含有烯烃聚合物，乙烯 - 羧酸共聚物或其混合物的水分散体。烯烃聚合物可以包含乙烯和辛烯的互聚物，而乙烯 - 羧酸共聚物可以包含乙烯 - 丙烯酸共聚物。添加剂组合物还可以含有分散剂，例如脂肪酸。添加剂组合物可以通过与用于形成纤维网的纤维组合而结合到组织纤维网中。或者，添加剂组合物可以在幅材已经形成之后局部施加到幅材上。例如，在一个实施方案中，添加剂组合物可以在起皱操作期间作为起皱粘合剂施加到幅材上。添加剂组合物可以改善组织织物的强度，而不会以不利的方式基本上影响纤维网的感觉到的柔软度。

19. 发明申请

US20070114605A1 ION IMPLANTATION OF NITROGEN INTO SEMICONDUCTOR SUBSTRATE PRIOR TO OXIDATION FOR OFFSET SPACER FORMATION 失效
标题翻译：在离子间隙形成的氧化物之前将氮离子注入半导体衬底
公开(公告)号：US20070114605A1
公开(公告)日：2007-05-24
申请号：US11164376
申请日：2005-11-21
申请人： Thomas Dyer , Jinghong Li , Zhijiong Luo
发明人： Thomas Dyer , Jinghong Li , Zhijiong Luo
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/26506 , H01L21/2658 , H01L21/28247
摘要： A method of formation of integrated circuit devices includes forming a gate electrode stack over a portion of a semiconductor. The stack includes a gate dielectric layer with a gate electrode thereabove. Implant diatomic nitrogen and/or nitrogen atoms into the substrate aside from the stack at a maximum energy less than or equal to 10 keV for diatomic nitrogen and at a maximum energy less than or equal to 5 keV for atomic nitrogen at a temperature less than or equal to 1000° C. for a time of less than or equal to 30 minutes. Then form silicon oxide offset spacers on sidewalls of the stack. Form source/drain extension regions in the substrate aside from the offset spacers. Form nitride sidewall spacers on outer surfaces of the offset spacers over another portion of the nitrogen implanted layer. Then form source/drain regions in the substrate aside from the sidewall spacers.
摘要翻译：形成集成电路器件的方法包括在半导体的一部分上形成栅电极堆叠。堆叠包括其上方具有栅电极的栅介质层。将双原子氮和/或氮原子从堆叠中以最低能量小于或等于10keV的双原子氮并且在小于或等于5keV的最大能量下，在低于或等于等于1000℃，时间小于或等于30分钟。然后在堆叠的侧壁上形成氧化硅偏移间隔物。在偏移间隔物之外的衬底中形成源极/漏极延伸区域。在氮注入层的另一部分上的偏移间隔物的外表面上形成氮化物侧壁间隔物。然后在侧壁间隔物之外形成衬底中的源极/漏极区域。

20. 发明授权

US07842592B2 Channel strain engineering in field-effect-transistor 有权
标题翻译：场效应晶体管中的通道应变工程
公开(公告)号：US07842592B2
公开(公告)日：2010-11-30
申请号：US11760056
申请日：2007-06-08
申请人： Thomas Dyer , Rajendran Krishnasamy , Jin-Ping Han , Ernst Demm
发明人： Thomas Dyer , Rajendran Krishnasamy , Jin-Ping Han , Ernst Demm
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L29/7845 , H01L21/28026 , H01L21/28079 , H01L21/823807 , H01L29/165 , H01L29/49 , H01L29/665 , H01L29/66545 , H01L29/66553 , H01L29/66636 , H01L29/78 , H01L29/7843 , H01L29/7848
摘要： There is disclosed a method of applying stress to a channel region underneath a gate of a field-effect-transistor, which includes the gate, a source region, and a drain region. The method includes steps of embedding stressors in the source and drain regions of the FET; forming a stress liner covering the gate and the source and drain regions; removing a portion of the stress liner, the portion of the stress liner being located on top of the gate of the FET; removing at least a substantial portion of the gate of a first gate material and thus creating an opening therein; and filling the opening with a second gate material.
摘要翻译：公开了一种对包括栅极，源极区和漏极区的场效应晶体管的栅极下面的沟道区域施加应力的方法。该方法包括以下步骤：将应力源嵌入在FET的源极和漏极区域中; 形成覆盖所述栅极和所述源极和漏极区域的应力衬垫; 去除所述应力衬垫的一部分，所述应力衬垫的所述部分位于所述FET的栅极顶部; 去除第一栅极材料的栅极的至少大部分，从而在其中形成开口; 并用第二栅极材料填充开口。

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