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11. 发明申请

US20150053847A1 SILICON PHOTOMULTIPLIER 有权
标题翻译：硅胶光刻胶
公开(公告)号：US20150053847A1
公开(公告)日：2015-02-26
申请号：US14388162
申请日：2012-03-29
申请人： Tetsuo Furumiya
发明人： Tetsuo Furumiya
IPC分类号： G01J1/44 , G01J1/42
CPC分类号： G01J1/44 , G01J1/4228 , G01J2001/4413 , G01J2001/446 , G01T1/20 , G01T1/208 , G01T1/248 , H01L27/1446 , H01L31/02019
摘要： One embodiment of the disclosure includes an A-D conversion circuit connected to a photodiode for providing a silicon photomultiplier that with enhanced detection accuracy and a time resolution. A current generated upon photon detection by the photodiode partially flows into another photodiode adjacent to the photodiode arranged in parallel via a resistor. At this time, the current is charged into a parasitic capacitance adjacent to the photodiode, and thereafter is discharged. However, the discharged current cannot flow toward an output terminal by the A-D conversion circuit, and also cannot switch the A-D conversion circuit. Consequently, the construction of the disclosure can detect light with no influence of the current discharged from the parasitic capacitance. As a result, the disclosure achieves a silicon photomultiplier with high detection accuracy and a satisfactory time resolution.
摘要翻译：本公开的一个实施例包括连接到光电二极管的A-D转换电路，用于提供具有增强的检测精度和时间分辨率的硅光电倍增管。通过光电二极管的光子检测产生的电流部分地通过电阻器流入与光电二极管相邻的另一个光电二极管。此时，将电流充电到与光电二极管相邻的寄生电容，然后放电。然而，放电电流不能通过A-D转换电路流向输出端子，也不能切换A-D转换电路。因此，本公开的结构可以不受从寄生电容放电的电流的影响来检测光。结果，本发明实现了具有高检测精度和令人满意的时间分辨率的硅光电倍增管。

12. 发明授权

US09568360B2 Silicon photomultiplier with improved detection accuracy 有权
标题翻译：硅光电倍增管，检测精度提高
公开(公告)号：US09568360B2
公开(公告)日：2017-02-14
申请号：US14388162
申请日：2012-03-29
申请人： Tetsuo Furumiya
发明人： Tetsuo Furumiya
IPC分类号： G01J1/42 , G01J1/44 , H01L31/02 , G01T1/24 , H01L27/144 , G01T1/20 , G01T1/208
CPC分类号： G01J1/44 , G01J1/4228 , G01J2001/4413 , G01J2001/446 , G01T1/20 , G01T1/208 , G01T1/248 , H01L27/1446 , H01L31/02019
摘要： One embodiment of the disclosure includes an A-D conversion circuit connected to a photodiode for providing a silicon photomultiplier that with enhanced detection accuracy and a time resolution. A current generated upon photon detection by the photodiode partially flows into another photodiode adjacent to the photodiode arranged in parallel via a resistor. At this time, the current is charged into a parasitic capacitance adjacent to the photodiode, and thereafter is discharged. However, the discharged current cannot flow toward an output terminal by the A-D conversion circuit, and also cannot switch the A-D conversion circuit. Consequently, the construction of the disclosure can detect light with no influence of the current discharged from the parasitic capacitance. As a result, the disclosure achieves a silicon photomultiplier with high detection accuracy and a satisfactory time resolution.
摘要翻译：本公开的一个实施例包括连接到光电二极管的A-D转换电路，用于提供具有增强的检测精度和时间分辨率的硅光电倍增管。通过光电二极管的光子检测产生的电流部分地通过电阻器流入与光电二极管相邻的另一个光电二极管。此时，将电流充电到与光电二极管相邻的寄生电容，然后放电。然而，放电电流不能通过A-D转换电路流向输出端子，也不能切换A-D转换电路。因此，本公开的结构可以不受从寄生电容放电的电流的影响来检测光。结果，本发明实现了具有高检测精度和令人满意的时间分辨率的硅光电倍增管。

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