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11. 发明申请

US20130044284A1 ELECTRO-OPTIC APPARATUS AND ELECTRONIC APPARATUS 有权
标题翻译：电光设备和电子设备
公开(公告)号：US20130044284A1
公开(公告)日：2013-02-21
申请号：US13572869
申请日：2012-08-13
申请人： Minoru Moriwaki
发明人： Minoru Moriwaki
IPC分类号： G02F1/1333
CPC分类号： G02F1/136277 , G02F1/136213 , G02F1/136227
摘要： A retention capacity in which a first electrode, a lower side capacity insulation film, a second electrode, an upper side capacity insulation film, and a third electrode are laminated is formed between a pixel electrode and a TFT. The lower side capacity insulation film and the upper side capacity insulation film respectively include a plurality of insulation films, and the lamination order thereof is the same.
摘要翻译：在像素电极和TFT之间形成有第一电极，下侧电容绝缘膜，第二电极，上侧电容绝缘膜和第三电极层叠的保持容量。下侧电容绝缘膜和上侧电容绝缘膜分别包括多个绝缘膜，并且其层叠顺序相同。

12. 发明授权

US08072080B2 Connection structure, electro-optical device, and method for production of electro-optical device 失效
标题翻译：连接结构，电光装置及电光装置的制造方法
公开(公告)号：US08072080B2
公开(公告)日：2011-12-06
申请号：US11962618
申请日：2007-12-21
申请人： Minoru Moriwaki
发明人： Minoru Moriwaki
IPC分类号： H01L23/48
CPC分类号： G02F1/136227 , G02F1/136209 , G02F1/136213 , G02F1/136286 , H01L27/124
摘要： The invention provides a connection structure including: a first electro-conductive film that is formed on a substrate; an insulation film that is formed on the first electro-conductive film, an end surface of the insulation film facing in a direction in which an end surface of the first electro-conductive film faces; and a second electro-conductive film that extends from the upper surface of the insulation film to reach the end surface of the first electro-conductive film across the end surface of the insulation film, the second electro-conductive film being electrically connected to the first electro-conductive film via the end surface of the first electro-conductive film.
摘要翻译：本发明提供一种连接结构，包括：形成在基板上的第一导电膜; 形成在所述第一导电膜上的绝缘膜，所述绝缘膜的端面朝向所述第一导电膜的端面的方向; 以及第二导电膜，其从所述绝缘膜的上表面延伸穿过所述绝缘膜的端面到达所述第一导电膜的端面，所述第二导电膜电连接到所述第一导电膜，导电膜经由第一导电膜的端面。

13. 发明申请

US20070255864A1 Information transfer apparatus and information transfer method 审中-公开
标题翻译：信息传递装置和信息传递方法
公开(公告)号：US20070255864A1
公开(公告)日：2007-11-01
申请号：US11705717
申请日：2007-02-14
申请人： Minoru Moriwaki
发明人： Minoru Moriwaki
IPC分类号： G06F13/28
CPC分类号： G06F13/28 , H04N21/42692
摘要： According to one embodiment, an information transfer apparatus for performing direct memory access (DMA) between a memory unit and an input/output device comprises a first port to form a first transfer path which performs DMA transfer of information between the memory and the input/output device via a general-purpose bus, a second port to form a second transfer path which directly performs DMA transfer of information between the memory unit and the input/output device no via the general-purpose bus, and a selecting unit to select the first transfer path and the second transfer path on the basis of control from the outside.
摘要翻译：根据一个实施例，用于在存储器单元和输入/输出设备之间执行直接存储器访问（DMA）的信息传送设备包括：第一端口，用于形成在存储器和输入/输出设备之间执行信息DMA传输的第一传送路径; 输出设备，第二端口，以形成第二传送路径，其直接通过通用总线在存储器单元和输入/输出设备之间直接执行信息的DMA传送;以及选择单元，用于选择基于来自外部的控制的第一传送路径和第二传送路径。

14. 发明申请

US20050127810A1 Method of manufacturing electro-optical device, electro-optical device, and electronic apparatus comprising the same 审中-公开
标题翻译：电光装置的制造方法，电光装置以及包含该装置的电子装置
公开(公告)号：US20050127810A1
公开(公告)日：2005-06-16
申请号：US10981680
申请日：2004-11-05
申请人： Keiji Fukuhara , Minoru Moriwaki
发明人： Keiji Fukuhara , Minoru Moriwaki
IPC分类号： G02F1/1368 , B05D5/06 , B05D5/12 , G02F1/133 , G02F1/1333 , G02F1/136 , G02F1/1362 , G09F9/30 , G09G3/36 , H01J29/00 , H01L21/00 , H01L21/316 , H01L21/336 , H01L29/786
CPC分类号： G02F1/136227
摘要： To provide an electro-optical device, which has a high manufacturing yield and high quality display, the electro-optical device includes above a substrate, display electrodes, at least one of wiring lines and electronic elements that drive the display electrodes, and interlayer insulating films provided below the display electrodes to electrically insulate the display electrodes and at least one of the wiring lines and electronic elements from each other. At least one of the interlayer insulating films includes a boron phosphorus silicate glass film and has its top face subjected to planarizing treatment by being put into a fluidized state.
摘要翻译：为了提供具有高制造成本和高质量显示的电光装置，电光装置包括：基板，显示电极，驱动显示电极的布线和电子元件中的至少一个以及层间绝缘提供在显示电极下方的电膜，以使显示电极和至少一个布线和电子元件彼此电绝缘。层间绝缘膜中的至少一层包括硼磷硅玻璃膜，并且其顶面通过进入流化状态进行平坦化处理。

15. 发明授权

US5760032A Thienylazole compound and thienotriazolodiazepine compound 失效
标题翻译：噻吩唑化合物和噻吩并三唑并噻嗪类化合物
公开(公告)号：US5760032A
公开(公告)日：1998-06-02
申请号：US750025
申请日：1996-11-22
申请人： Hiroshi Kitajima , Syuji Ehara , Hideaki Sato , Minoru Moriwaki , Kenichi Onishi
发明人： Hiroshi Kitajima , Syuji Ehara , Hideaki Sato , Minoru Moriwaki , Kenichi Onishi
IPC分类号： C07D409/04 , C07D409/14 , C07D495/14 , A61K31/55 , C07D491/00 , C07D513/00 , C07D515/00
CPC分类号： C07D409/14 , C07D409/04 , C07D495/14
摘要： Thienylazole compounds (I) and thienotriazolodiazepine compounds (II) of the formulas ##STR1## wherein R.sup.1 and R.sup.2 are hydrogen, halogen, C.sub.1 -C.sub.5 alkyl and the like; --A.dbd.B-- is --N.dbd.N-- and the like; R.sup.3 and R.sup.19 are hydrogen, C.sub.1 -C.sub.5 alkyl and the like; Y is --NHCO--, --NHCONH--, --NHCOO-- and the like; Z.sup.1 and Z.sup.2 are aryl, heteroaryl and the like; Ar is halogen-substituted phenyl and the like; and m is 0 or an integer of 1-5. The compounds of the present invention have CCK antagonistic action and gastrin antagonistic action, particularly potent antagonistic action against CCK-A receptor, and are useful as agents for the prophylaxis and treatment of central and peripheral nervous system diseases (e.g., anxiety, schizophrenia, and the like) and digestive diseases (e.g., pancreatitis, gastric ulcer, enterelcosis, irritable bowel syndrome, constipation, and the like).
摘要翻译： PCT No.PCT / JP95 / 01071 Sec。 371日期：1996年11月22日 102（e）日期1996年11月22日PCT归档1995年6月1日PCT公布。公开号WO95 / 32964 日期：1995年12月7日式（I）其中R 1和R 2为氢，卤素，C 1 -C 5烷基等的噻吩唑化合物（I）和噻吩并三唑并二氮杂化合物（Ⅱ） -A = B-是-N = N-等; R3和R19是氢，C1-C5烷基等; Y是-NHCO-，-NHCONH-，-NHCOO-等; Z 1和Z 2是芳基，杂芳基等; Ar是卤素取代的苯基等; m为0或1-5的整数。本发明的化合物具有CCK拮抗作用和胃泌素拮抗作用，特别是针对CCK-A受体的强效拮抗作用，可用作预防和治疗中枢和周围神经系统疾病（例如焦虑，精神分裂症和类似物）和消化疾病（例如胰腺炎，胃溃疡，入侵性肠易激综合征，便秘等）。

16. 发明授权

US4386092A Heterocyclic-substituted oxoalkanoic acid derivatives 失效
标题翻译：杂环取代的氧代链烷酸衍生物
公开(公告)号：US4386092A
公开(公告)日：1983-05-31
申请号：US297696
申请日：1981-08-28
申请人： Takanori Oe , Minoru Moriwaki , Kazuhiro Goto , Masao Hisadome
发明人： Takanori Oe , Minoru Moriwaki , Kazuhiro Goto , Masao Hisadome
IPC分类号： A61K31/435 , A61P25/04 , A61P29/00 , A61P35/00 , A61P37/08 , C07D471/04 , C07D513/04 , A61K31/425
CPC分类号： C07D471/04 , C07D513/04
摘要： A heterocyclic-substituted oxoalkanoic acid derivative having immunomodulatory activities of the formula: ##STR1## wherein R.sup.1 is hydrogen, lower alkyl, phenyl which may be substituted by at least one substituent selected from halogen, lower alkyl, lower alkoxy, mono- or di-lower alkyl amino-substituted lower alkoxy, lower alkylthio, lower alkylsulfinyl, amino, nitro and cyano at any position(s) on the nucleus, thienyl or furyl, each of R.sup.2 and R.sup.3 is hydrogen or lower alkyl, A is lower alkylene, X is sulfur or vinylene, Y is nitrogen or methine which may be substituted by lower alkyl, Z is carbonyl or direct bond.
摘要翻译： PCT No.PCT / JP81 / 00007 Sec。 371日期1981年8月28日 102（e）日期1981年8月28日PCT提交1981年1月13日PCT公布。出版物WO81 / 02013 日本1981年7月23日。具有下式的免疫调节活性的杂环取代的氧代链烷酸衍生物：其中R 1是氢，低级烷基，可以被至少一个选自卤素，低级烷基，低级烷氧基，单 - 或二 - 低级烷基氨基取代的低级烷氧基，低级烷硫基，低级烷基亚磺酰基，氨基，硝基和氰基在任何位置，噻吩基或呋喃基，R2和R3各自为氢或低级烷基 A为低级亚烷基，X为硫或亚乙烯基，Y为可被低级烷基取代的氮或次甲基，Z为羰基或直接键。

17. 发明授权

US09030616B2 Electro-optic apparatus and electronic apparatus 有权
标题翻译：电光设备和电子设备
公开(公告)号：US09030616B2
公开(公告)日：2015-05-12
申请号：US13572869
申请日：2012-08-13
申请人： Minoru Moriwaki
发明人： Minoru Moriwaki
IPC分类号： G02F1/1343 , G02F1/1333 , G02F1/1362
CPC分类号： G02F1/136277 , G02F1/136213 , G02F1/136227
摘要： A retention capacity in which a first electrode, a lower side capacity insulation film, a second electrode, an upper side capacity insulation film, and a third electrode are laminated is formed between a pixel electrode and a TFT. The lower side capacity insulation film and the upper side capacity insulation film respectively include a plurality of insulation films, and the lamination order thereof is the same.
摘要翻译：在像素电极和TFT之间形成有第一电极，下侧电容绝缘膜，第二电极，上侧电容绝缘膜和第三电极层叠的保持容量。下侧电容绝缘膜和上侧电容绝缘膜分别包括多个绝缘膜，并且其层叠顺序相同。

18. 发明申请

US20110242470A1 ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS 有权
标题翻译：电光设备和电子设备
公开(公告)号：US20110242470A1
公开(公告)日：2011-10-06
申请号：US13079203
申请日：2011-04-04
申请人： Minoru Moriwaki
发明人： Minoru Moriwaki
IPC分类号： G02F1/1333
CPC分类号： G02F1/136213 , G02F2001/13629 , H01L27/1255
摘要： An electro-optical device includes: a pixel electrode provided on a substrate; a transistor being provided between the substrate and the pixel electrodes; and a holding capacitor, provided between the pixel electrode and the transistor, configured of a first electrode, a second electrode provided opposing the first electrode via a first capacitor insulation film, and a third electrode provided opposing the first electrode via a second capacitor insulation film. Both the first capacitor insulation film and the second capacitor insulation film have multiple layers; the first capacitor insulation film and the second electrode are formed symmetrical to the second capacitor insulation film and the third electrode when viewed from the first electrode.
摘要翻译：电光装置包括：设置在基板上的像素电极; 在所述基板和所述像素电极之间设置晶体管; 以及设置在像素电极和晶体管之间的保持电容器，由第一电极，经由第一电容器绝缘膜与第一电极相对设置的第二电极和经由第二电容器绝缘膜设置成与第一电极相对设置的第三电极。第一电容绝缘膜和第二电容绝缘膜都有多层; 当从第一电极观察时，第一电容器绝缘膜和第二电极形成为与第二电容器绝缘膜和第三电极对称。

19. 发明授权

US07226836B2 Method of manufacturing substrate for electro-optical device, substrate for electro-optical device, electro-optical device, and electronic apparatus 失效
标题翻译：电光装置用基板，电光装置用基板，电光装置及电子装置的制造方法
公开(公告)号：US07226836B2
公开(公告)日：2007-06-05
申请号：US10964732
申请日：2004-10-15
申请人： Minoru Moriwaki
发明人： Minoru Moriwaki
IPC分类号： H01L21/8242
CPC分类号： G02F1/136213 , G02F1/136227
摘要： Exemplary embodiments provide a method of manufacturing a substrate for an electro-optical device. The method includes sequentially depositing on the substrate a lower conductive layer which is a lower electrode of the capacitor, an intermediate layer which is a dielectric film of the capacitor, and an upper conductive layer which is an upper electrode of the capacitor, in which the lower conductive layer is made of a material having an etching rate lower than an etching rate of a material of the upper conductive layer with respect to a predetermined etching agent; forming a mask having a predetermined planar pattern on the upper conductive layer; patterning the upper conductive layer, the intermediate layer and the lower conductive layer by etching with the mask, in which the etching agent is applied to at least the upper conductive layer and the lower conductive layer; and removing the mask. Accordingly, it is possible to simply manufacture a high reliable capacitor on the substrate.
摘要翻译：示例性实施例提供了一种制造用于电光器件的衬底的方法。该方法包括在基板上依次沉积作为电容器的下电极的下导电层，作为电容器的电介质膜的中间层和作为电容器的上电极的上导电层，下导电层由蚀刻速率低于上导电层的材料相对于预定蚀刻剂的蚀刻速率的材料制成; 在上导电层上形成具有预定平面图案的掩模; 通过用掩模进行蚀刻来图案化上导电层，中间层和下导电层，其中将蚀刻剂施加到至少上导电层和下导电层; 并取下面罩。因此，可以简单地在基板上制造高可靠性的电容器。

20. 发明申请

US20050104066A1 Method of manufacturing substrate for electro-optical device, substrate for electro-optical device, electro-optical device, and electronic apparatus 失效
标题翻译：电光装置用基板，电光装置用基板，电光装置及电子装置的制造方法
公开(公告)号：US20050104066A1
公开(公告)日：2005-05-19
申请号：US10964732
申请日：2004-10-15
申请人： Minoru Moriwaki
发明人： Minoru Moriwaki
IPC分类号： G02F1/1368 , G02F1/133 , G02F1/1362 , G09F9/30 , H01L21/28 , H01L21/786 , H01L29/786 , H01L31/036
CPC分类号： G02F1/136213 , G02F1/136227
摘要： Exemplary embodiments provide a method of manufacturing a substrate for an electro-optical device. The method includes sequentially depositing on the substrate a lower conductive layer which is a lower electrode of the capacitor, an intermediate layer which is a dielectric film of the capacitor, and an upper conductive layer which is an upper electrode of the capacitor, in which the lower conductive layer is made of a material having an etching rate lower than an etching rate of a material of the upper conductive layer with respect to a predetermined etching agent; forming a mask having a predetermined planar pattern on the upper conductive layer; patterning the upper conductive layer, the intermediate layer and the lower conductive layer by etching with the mask, in which the etching agent is applied to at least the upper conductive layer and the lower conductive layer; and removing the mask. Accordingly, it is possible to simply manufacture a high reliable capacitor on the substrate.
摘要翻译：示例性实施例提供了一种制造用于电光器件的衬底的方法。该方法包括在基板上依次沉积作为电容器的下电极的下导电层，作为电容器的电介质膜的中间层和作为电容器的上电极的上导电层，下导电层由蚀刻速率低于上导电层的材料相对于预定蚀刻剂的蚀刻速率的材料制成; 在上导电层上形成具有预定平面图案的掩模; 通过用掩模进行蚀刻来图案化上导电层，中间层和下导电层，其中将蚀刻剂施加到至少上导电层和下导电层; 并取下面罩。因此，可以简单地在基板上制造高可靠性的电容器。

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