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11. 发明申请

US20060275710A1 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US20060275710A1
公开(公告)日：2006-12-07
申请号：US11440175
申请日：2006-05-25
申请人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
发明人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
IPC分类号： G03F7/26
CPC分类号： H01L21/02683 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L27/1285 , H01L27/1288
摘要： To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.

12. 发明授权

US08633542B2 SOI substrate and manufacturing method thereof 有权
公开(公告)号：US08633542B2
公开(公告)日：2014-01-21
申请号：US13230086
申请日：2011-09-12
申请人： Tetsuya Kakehata , Hideto Ohnuma , Yoshiaki Yamamoto , Kenichiro Makino
发明人： Tetsuya Kakehata , Hideto Ohnuma , Yoshiaki Yamamoto , Kenichiro Makino
IPC分类号： H01L27/12 , H01L29/02
CPC分类号： H01L27/1218 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/0649 , H01L29/66772 , H01L29/78 , H01L29/78603 , H01L31/0352
摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.

13. 发明申请

US20120270413A1 Silicon Nitride Film, A Semiconductor Device, A Display Device and a Method for Manufacturing a Silicon Nitride Film 有权
标题翻译：氮化硅膜，A半导体器件，显示装置和氮化硅膜的制造方法
公开(公告)号：US20120270413A1
公开(公告)日：2012-10-25
申请号：US13540259
申请日：2012-07-02
申请人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
发明人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L27/3244 , H01L51/0022 , H01L51/5228 , H01L51/5253
摘要： The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH4), nitrogen (N2) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.
摘要翻译：本发明提供了一种通过等离子体CVD形成可以在热敏元件上形成的氮化硅膜以及电致发光元件并具有良好的阻挡特性的方法。此外，本发明还提供一种通过使用氮化硅膜形成的半导体器件，显示器件和发光显示器件。在通过等离子体CVD形成氮化硅膜的方法中，在沉积中将硅烷（SiH4），氮（N2）和稀有气体引入淀积室中，反应压力在0.01托至0.1托的范围内。

14. 发明授权

US08207045B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08207045B2
公开(公告)日：2012-06-26
申请号：US12692768
申请日：2010-01-25
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L21/302
CPC分类号： H01L21/76254 , Y10S438/977
摘要： An object is to reduce occurrence of defective bonding between a base substrate and a semiconductor substrate even when a silicon nitride film or the like is used as a bonding layer. Another object is to provide a method for manufacturing an SOI substrate by which an increase in the number of steps can be suppressed. A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween.
摘要翻译：即使在使用氮化硅膜等作为接合层的情况下，也可以减少基底基板与半导体基板之间的不良接合的发生。另一个目的是提供一种用于制造可以抑制步数增加的SOI衬底的方法。制备半导体衬底和基底衬底; 在半导体衬底上形成氧化膜; 半导体衬底通过氧化膜被加速离子照射，以在半导体衬底的表面的预定深度处形成分离层; 在离子照射之后在氧化膜上方形成含氮层; 半导体衬底和基底衬底彼此相对设置，以将氮含量层的表面和基底衬底的表面彼此粘合; 并且半导体衬底被加热以沿着分离层分离，从而在氧化膜和含氮层之间形成在基底衬底上的单晶半导体层。

15. 发明授权

US07994022B2 Semiconductor substrate and semiconductor device and manufacturing method of the same 有权
标题翻译：半导体衬底和半导体器件及其制造方法相同
公开(公告)号：US07994022B2
公开(公告)日：2011-08-09
申请号：US12249437
申请日：2008-10-10
申请人： Tetsuya Kakehata
发明人： Tetsuya Kakehata
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/321 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： A semiconductor substrate having an SOI layer is provided. Between an SOI layer and a glass substrate, a bonding layer is provided which is formed of one layer or a plurality of layers of phosphosilicate glass, borosilicate glass, and/or borophosphosilicate glass, using organosilane as one material by a thermal CVD method at a temperature of 500° C. to 800° C.
摘要翻译：提供具有SOI层的半导体衬底。在SOI层和玻璃基板之间，提供由一层或多层磷硅酸盐玻璃，硼硅酸盐玻璃和/或硼磷硅酸盐玻璃形成的接合层，使用有机硅烷作为一种材料，通过热CVD法在温度为500°C至800°C

16. 发明授权

US07842584B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07842584B2
公开(公告)日：2010-11-30
申请号：US12339413
申请日：2008-12-19
申请人： Sho Kato , Fumito Isaka , Tetsuya Kakehata , Hiromichi Godo , Akihisa Shimomura
发明人： Sho Kato , Fumito Isaka , Tetsuya Kakehata , Hiromichi Godo , Akihisa Shimomura
IPC分类号： H01L21/18
CPC分类号： H01L21/84 , H01L21/76254 , H01L27/1203 , H01L29/78606 , H01L29/78621 , H01L29/78696
摘要： There are provided a semiconductor device having a structure which can realize not only suppression of a punch-through current but also reuse of a silicon wafer used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. A semiconductor film into which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted is formed over a substrate, and a single crystal semiconductor film is bonded to the semiconductor film by an SOI technique to form a stacked semiconductor film. A channel formation region is formed using the stacked semiconductor film, thereby suppressing a punch-through current in a semiconductor device.
摘要翻译：提供了一种半导体器件及其制造方法，该半导体器件不仅可以实现穿通电流的抑制，而且可以实现用于接合的硅晶片的再利用，在制造使用SOI技术的半导体器件中。在衬底上形成其中注入了与源极区域和漏极区域相反的导电类型的杂质的半导体膜，并且通过SOI技术将单晶半导体膜结合到半导体膜，以形成堆叠半导体膜。使用堆叠的半导体膜形成沟道形成区域，从而抑制半导体器件中的穿通电流。

17. 发明授权

US07790563B2 Semiconductor device, electronic device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置，电子装置及半导体装置的制造方法
公开(公告)号：US07790563B2
公开(公告)日：2010-09-07
申请号：US12216548
申请日：2008-07-08
申请人： Tetsuya Kakehata
发明人： Tetsuya Kakehata
IPC分类号： H01L21/331
CPC分类号： H01L27/1266 , H01L27/1214 , H01L29/66772
摘要： A semiconductor device of the present invention is manufactured by the following steps: forming a single-crystal semiconductor layer over a substrate having an insulating surface; irradiating a region of the single-crystal semiconductor layer with laser light; forming a circuit of a pixel portion using a region of the single-crystal semiconductor layer which is not irradiated with the laser light; and forming a driver circuit for driving the circuit of the pixel portion using the region of the single-crystal semiconductor layer which is irradiated with the laser light. Thus, a semiconductor device using a single-crystal semiconductor layer which is suitable for a peripheral driver circuit region and a single-crystal semiconductor layer which is suitable for a pixel region can be provided.
摘要翻译：通过以下步骤制造本发明的半导体器件：在具有绝缘表面的衬底上形成单晶半导体层; 用激光照射单晶半导体层的区域; 使用未被激光照射的单晶半导体层的区域来形成像素部的电路; 以及使用被激光照射的单晶半导体层的区域形成用于驱动像素部分的电路的驱动电路。因此，可以提供使用适合于外围驱动电路区域的单晶半导体层的半导体装置和适合像素区域的单晶半导体层。

18. 发明授权

US07781306B2 Semiconductor substrate and method for manufacturing the same 有权
标题翻译：半导体基板及其制造方法
公开(公告)号：US07781306B2
公开(公告)日：2010-08-24
申请号：US12155338
申请日：2008-06-03
申请人： Tetsuya Kakehata
发明人： Tetsuya Kakehata
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L27/112 , H01L27/1122 , H01L27/12 , H01L27/1214 , H01L29/66772
摘要： A semiconductor device and a method for manufacturing thereof are provided. The method includes a step of forming a first insulating film containing silicon and oxygen as its composition over a single-crystal semiconductor substrate, a step of forming a second insulating film containing silicon and nitrogen as its composition over the first insulating film, a step of irradiating the second insulating film with first ions to form a separation layer in the single-crystal semiconductor substrate, a step of irradiating the second insulating film with second ions so that halogen is contained in the first insulating film, and a step of performing heat treatment to separate the single-crystal semiconductor substrate with a single-crystal semiconductor film left over the supporting substrate.
摘要翻译：提供半导体器件及其制造方法。该方法包括在单晶半导体衬底上形成含有硅和氧作为其组成的第一绝缘膜的步骤，在第一绝缘膜上形成含有硅和氮作为其组成的第二绝缘膜的步骤，用第一离子照射第二绝缘膜以在单晶半导体衬底中形成分离层，用第二离子照射第二绝缘膜使得第一绝缘膜中包含卤素的步骤和进行热处理的步骤以将单晶半导体衬底与留在支撑衬底上的单晶半导体膜分开。

19. 发明申请

US20080318394A1 Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device 失效
标题翻译：半导体衬底，半导体衬底的制造方法，半导体器件和电子器件
公开(公告)号：US20080318394A1
公开(公告)日：2008-12-25
申请号：US12213308
申请日：2008-06-18
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided.
摘要翻译：通过以下步骤在具有绝缘表面的衬底上形成单晶半导体层：从单晶半导体衬底的表面形成在给定深度处的离子掺杂层; 对所述单晶半导体衬底的表面进行等离子体处理; 在进行等离子体处理的单晶半导体基板上形成绝缘层; 将单晶半导体衬底与绝缘表面的衬底接合在绝缘层之间; 以及使用离子掺杂层作为分离表面分离单晶半导体衬底。结果，可以提供其中单晶半导体层和绝缘层之间的界面的缺陷减小的半导体衬底。

20. 发明授权

US09837300B2 Method for manufacturing SOI substrate 有权
公开(公告)号：US09837300B2
公开(公告)日：2017-12-05
申请号：US13467082
申请日：2012-05-09
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L21/58 , H01L21/762
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween.

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