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11. 发明授权

US5257335A Single mode optical fiber device including a short lens optical fiber 失效
标题翻译：单模光纤装置包括短透镜光纤
公开(公告)号：US5257335A
公开(公告)日：1993-10-26
申请号：US824078
申请日：1992-01-23
申请人： Kazuhiro Kurata , Koya Komatsu , Koji Yamamoto
发明人： Kazuhiro Kurata , Koya Komatsu , Koji Yamamoto
IPC分类号： G02B6/00 , G02B6/24 , G02B6/26 , G02B6/36
CPC分类号： G02B6/264 , G02B6/262
摘要： An optical terminal structure includes a single mode optical fiber having a short length, and a cylindrical member in which the single mode optical fiber is fixed. The cylindrical member has the co-axis as that of a core of the single mode optical fiber. Each of both facets of the cylindrical member is polished to have a mirror surface. The core and a clad of the single mode optical fiber have refractive indexes so that the normalized frequency in operation state of the single mode optical fiber becomes at most 2.405 as a value converted at a wavelength in use of 1.28 .mu.m. The wavelength in use is preferably in the range of 1.29 to 1.33 .mu.m.

12. 发明授权

US4984035A Monolithic light emitting diode array 失效
标题翻译：单片发光二极管阵列
公开(公告)号：US4984035A
公开(公告)日：1991-01-08
申请号：US178648
申请日：1988-04-07
申请人： Ryosaku Kanzawa , Ken Takahashi , Hisumi Sano , Kazuhiro Kurata
发明人： Ryosaku Kanzawa , Ken Takahashi , Hisumi Sano , Kazuhiro Kurata
IPC分类号： B41J2/45 , H01L27/15 , H01L33/00
CPC分类号： H01L33/0025 , B41J2/45 , H01L27/153 , H01L33/0062
摘要： A monolithic light emitting diode array includes: at least one mixed crystal layer formed on a substrate by an epitaxial growth to provide a P-N junction at the boundary surface thereof; row of a plurality of light emitting diode portions each having the P-N junction; at least one forward mesa etching groove provided along the row of a plurality of light emitting diode portions on the at least one mixed crystal layer; a plurality of reverse mesa etching grooves provided so to be orthogonal to the at least one forward mesa etching groove and positioned between the plurality of light emitting diode portions on the at least one mixed crystal layer; a plurality of individual electrodes having electrode portions extending respectively to the plurality of light emitting diode portions so as to cross the at least one forward mesa etching groove, and a common electrode provided on a back surface of said substrate. Each of the emitting diode portions is surrounded by the forward and reverse mesa etching grooves so that the manufacturing thereof becomes easier and the characteristic thereof is improved.
摘要翻译：单片发光二极管阵列包括：通过外延生长在衬底上形成的至少一个混晶层，以在其边界表面提供P-N结; 行的多个发光二极管部分，每个具有P-N结; 沿着所述至少一个混晶层上的多个发光二极管部分的行设置的至少一个前台面蚀刻槽; 多个反向台面蚀刻槽，设置成与所述至少一个前台面蚀刻槽正交，并位于所述至少一个混晶层上的所述多个发光二极管部分之间; 多个单独电极，具有分别延伸到所述多个发光二极管部分以与所述至少一个前台面蚀刻槽交叉的电极部分和设置在所述基板的背面上的公共电极。每个发光二极管部分被正向和反向台面蚀刻槽包围，使得其制造变得更容易并且其特性得到改善。

13. 发明授权

US4933601A Light emitting diode array chip and method of fabricating same 失效
标题翻译：发光二极管阵列芯片及其制造方法
公开(公告)号：US4933601A
公开(公告)日：1990-06-12
申请号：US282175
申请日：1988-12-09
申请人： Toshio Sagawa , Kazuhiro Kurata
发明人： Toshio Sagawa , Kazuhiro Kurata
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L25/075 , H01L27/15 , H01L33/08 , H01L33/30 , H01L33/40 , H01L33/58 , H01L33/62
CPC分类号： H01L27/153 , B41J2/45 , H01L25/0753 , H01L2224/45144 , H01L2224/48091 , H01L2924/01039 , H01L2924/01079 , H01L2924/12041 , H01L33/58
摘要： An LED array chip comprising; a first semiconductor layer having p-type conduction; a second semiconductor layer having a n-type conduction, possessing forbidden band width smaller than the first layer and provided on the first layer, so as to form a semiconductor chip having a pn junction at the interface with the first layer; the second layer being divided into a first region and a second region by etching the second layer through to the pn junction, the first region thereof being divided to form individual plural LEDs of predetermined configuration, and the n-type layer in the second region being converted to the p-type layer as so to serve as a common region; individual electrodes respectively provided to the surfaces of the LEDs; and a common electrode provided to the common region, parts of the exposed surface of the p-type layer corresponding to the LEDs serving as light emitting surfaces. The LED array chip is mounted on a printed circuit board by directly bonding the individual electrodes and the common electrode to the corresponding electrode pads of the printed circuit.

14. 发明授权

US06273946B1 Method for production of multi-layered epitaxially grown crystal and apparatus therefor 失效
标题翻译：生产多层外延生长晶体的方法及其设备
公开(公告)号：US06273946B1
公开(公告)日：2001-08-14
申请号：US08050078
申请日：1993-05-05
申请人： Kazuhiro Kurata , Hajime Nakamura , Hiroshi Tomida
发明人： Kazuhiro Kurata , Hajime Nakamura , Hiroshi Tomida
IPC分类号： C30B1906
CPC分类号： C30B19/064
摘要： A used melt receptacle 40, a holder 60 for the alignment of crystalline substrates and a melt receptacle 20 are piled up in this order along a vertically extending central axis. A plurality of melt reservoirs 21a to 21d for different kinds of melts are disposed in the melt receptacle 20 concentrically about the central axis, while a plurality of used melt reservoirs are disposed in the used melt receptacle 40 in the same way. The supply of each melt from the corresponding melt reservoir 21a to 21d to the receiving cavity 63 of the holder 60 is changed by a cover 65, in which a melt supply hole 66 is formed, rotatable together with the holder 60. The melt used for crystal growth is discharged from the holder 60 to the used melt receptacle 40 through a cover 42 having used melt dropping holes 43a to 43d. Since the melt fills the receiving cavity 63 while partially remaining in the corresponding melt reservoir 21a to 21d, neither oxide films nor microcrystals are introduced into the receiving cavity 63. Hereby, a multi-layered crystal grows on the surface of each crystalline substrate without the harmful influence of the oxide films and the microcrystals.
摘要翻译：使用的熔体容器40，用于对准结晶衬底的保持器60和熔体容器20沿着垂直延伸的中心轴依次堆积。用于不同种类的熔体的多个熔体储存器21a至21d在熔体容器20中围绕中心轴线同心地设置，而多个使用的熔体储存器以相同的方式设置在所使用的熔体容器40中。通过其中形成有熔体供给孔66的盖65与保持器60一起旋转，将来自相应的熔体储存器21a至21d的每个熔体的供应改变为保持器60的容纳腔63。晶体生长通过具有使用的熔滴点孔43a至43d的盖42从保持器60排出到使用的熔体容器40。由于熔体填充接收腔63而部分保留在相应的熔体储存器21a至21d中，所以氧化物膜和微晶都不会被引入到容纳腔63中。因此，多层晶体在每个晶体衬底的表面上生长，氧化膜和微晶的有害影响。

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