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11. 发明授权

US06944078B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06944078B2
公开(公告)日：2005-09-13
申请号：US10892271
申请日：2004-07-16
申请人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
发明人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
IPC分类号： G11C7/06 , G11C11/406 , G11C11/4074 , G11C11/4091 , G11C7/00
CPC分类号： G11C7/065 , G11C5/025 , G11C5/14 , G11C7/06 , G11C7/08 , G11C11/406 , G11C11/4074 , G11C11/4091 , G11C2207/065 , H01L27/0207 , H01L27/10894
摘要： A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.
摘要翻译：一种读出放大器即使在存储器阵列电压降低的情况下，也能够使用来自存储单元的微小信号，以较低的功耗进行高速数据检测操作。用于过驱动的多个驱动开关被分布地布置在感测放大器区域中，并且用于恢复操作的多个驱动开关被集中地布置在一行的读出放大器的一端。使用网状电力线电路提供过驱动的可能性。通过使用用于过驱动的驱动开关，可以利用具有大于数据线幅度的电压的数据线对执行初始感测操作，从而实现高速感测操作。驱动器的分布布置使得用于过驱动的驱动器能够在感测操作中分散地提供电流，从而减小感测放大器的远和近位置的感测电压的差异。

12. 发明申请

US20050002251A1 Semiconductor device 有权
公开(公告)号：US20050002251A1
公开(公告)日：2005-01-06
申请号：US10892271
申请日：2004-07-16
申请人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
发明人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
IPC分类号： G11C7/06 , G11C11/406 , G11C11/4074 , G11C11/4091 , G11C7/02
CPC分类号： G11C7/065 , G11C5/025 , G11C5/14 , G11C7/06 , G11C7/08 , G11C11/406 , G11C11/4074 , G11C11/4091 , G11C2207/065 , H01L27/0207 , H01L27/10894
摘要： A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.

13. 发明授权

US07345938B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07345938B2
公开(公告)日：2008-03-18
申请号：US11797984
申请日：2007-05-09
申请人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
发明人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
IPC分类号： G11C7/00
CPC分类号： G11C7/065 , G11C5/025 , G11C5/14 , G11C7/06 , G11C7/08 , G11C11/406 , G11C11/4074 , G11C11/4091 , G11C2207/065 , H01L27/0207 , H01L27/10894
摘要： A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.
摘要翻译：一种读出放大器即使在存储器阵列电压降低的情况下，也能够使用来自存储单元的微小信号，以较低的功耗进行高速数据检测操作。用于过驱动的多个驱动开关被分布地布置在感测放大器区域中，并且用于恢复操作的多个驱动开关被集中地布置在一行的读出放大器的一端。使用网状电力线电路提供过驱动的可能性。通过使用用于过驱动的驱动开关，可以利用具有大于数据线幅度的电压的数据线对执行初始感测操作，从而实现高速感测操作。驱动器的分布布置使得用于过驱动的驱动器能够在感测操作中分散地提供电流，从而减小感测放大器的远和近位置的感测电压的差异。

14. 发明授权

US06535415B2 Semiconductor device 失效
公开(公告)号：US06535415B2
公开(公告)日：2003-03-18
申请号：US10251772
申请日：2002-09-23
申请人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
发明人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
IPC分类号： G11C506
CPC分类号： G11C7/065 , G11C5/025 , G11C5/14 , G11C7/06 , G11C7/08 , G11C11/406 , G11C11/4074 , G11C11/4091 , G11C2207/065 , H01L27/0207 , H01L27/10894
摘要： A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.

15. 发明授权

US06477100B2 Semiconductor memory device with over-driving sense amplifier 失效
标题翻译：具有过驱动读出放大器的半导体存储器件
公开(公告)号：US06477100B2
公开(公告)日：2002-11-05
申请号：US09933815
申请日：2001-08-22
申请人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
发明人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
IPC分类号： G11C700
CPC分类号： G11C7/06 , G11C7/065 , G11C11/406 , G11C11/4074 , G11C11/4091 , G11C2207/065
摘要： A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.
摘要翻译：一种读出放大器即使在存储器阵列电压降低的情况下，也能够使用来自存储单元的微小信号，以较低的功耗进行高速数据检测操作。用于过驱动的多个驱动开关被分布地布置在感测放大器区域中，并且用于恢复操作的多个驱动开关被集中地布置在一行的读出放大器的一端。使用网状电力线电路提供过驱动的可能性。通过使用用于过驱动的驱动开关，可以利用具有大于数据线幅度的电压的数据线对执行初始感测操作，从而实现高速感测操作。驱动器的分布布置使得用于过驱动的驱动器能够在感测操作中分散地提供电流，从而减小感测放大器的远和近位置的感测电压的差异。

16. 发明授权

US07230867B2 Semiconductor device 失效
公开(公告)号：US07230867B2
公开(公告)日：2007-06-12
申请号：US11206016
申请日：2005-08-18
申请人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
发明人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
IPC分类号： G11C7/00
CPC分类号： G11C7/065 , G11C5/025 , G11C5/14 , G11C7/06 , G11C7/08 , G11C11/406 , G11C11/4074 , G11C11/4091 , G11C2207/065 , H01L27/0207 , H01L27/10894
摘要： A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.

17. 发明授权

US06717835B2 Semiconductor device 失效
公开(公告)号：US06717835B2
公开(公告)日：2004-04-06
申请号：US10347804
申请日：2003-01-22
申请人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
发明人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
IPC分类号： G11C506
CPC分类号： G11C7/065 , G11C5/025 , G11C5/14 , G11C7/06 , G11C7/08 , G11C11/406 , G11C11/4074 , G11C11/4091 , G11C2207/065 , H01L27/0207 , H01L27/10894
摘要： A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.

18. 发明授权

US07759714B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07759714B2
公开(公告)日：2010-07-20
申请号：US11768824
申请日：2007-06-26
申请人： Kiyoo Itoh , Riichiro Takemura
发明人： Kiyoo Itoh , Riichiro Takemura
IPC分类号： H01L27/108
CPC分类号： H01L27/10897 , G11C11/4091 , G11C11/4097 , G11C2211/4016 , H01L27/0207 , H01L27/108 , H01L27/1203 , H01L27/1207
摘要： A high-speed and low-voltage DRAM memory cell capable of operating at 1 V or less and an array peripheral circuit are provided. A DRAM cell is comprised of a memory cell transistor and planar capacitor which utilize a FD-SOI MOST structure. Since there is no junction leakage current, loss of stored charge is eliminated, and the low-voltage operation can be realized. Further, a gate and a well in a cross-coupled type sense amplifier using FD-SOI MOSTs are connected. By this means, a threshold value dynamically changes and high-speed sensing operation can be realized.
摘要翻译：提供能够以1V以下工作的高速低电压DRAM存储单元和阵列外围电路。 DRAM单元由利用FD-SOI MOST结构的存储单元晶体管和平面电容器组成。由于没有结漏电流，消除了存储电荷的损失，并且可以实现低电压操作。此外，使用FD-SOI MOST的交叉耦合型读出放大器中的栅极和阱连接。通过这种方式，阈值动态地变化，并且可以实现高速感测操作。

19. 发明申请

US20060039218A1 Semiconductor device 失效
公开(公告)号：US20060039218A1
公开(公告)日：2006-02-23
申请号：US11206016
申请日：2005-08-18
申请人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
发明人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
IPC分类号： G11C7/00
CPC分类号： G11C7/065 , G11C5/025 , G11C5/14 , G11C7/06 , G11C7/08 , G11C11/406 , G11C11/4074 , G11C11/4091 , G11C2207/065 , H01L27/0207 , H01L27/10894
摘要： A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.

20. 发明授权

US06819613B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06819613B2
公开(公告)日：2004-11-16
申请号：US10692811
申请日：2003-10-27
申请人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
发明人： Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
IPC分类号： G11C700
CPC分类号： G11C7/065 , G11C5/025 , G11C5/14 , G11C7/06 , G11C7/08 , G11C11/406 , G11C11/4074 , G11C11/4091 , G11C2207/065 , H01L27/0207 , H01L27/10894
摘要： A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.
摘要翻译：一种读出放大器即使在存储器阵列电压降低的情况下，也能够使用来自存储单元的微小信号，以较低的功耗进行高速数据检测操作。用于过驱动的多个驱动开关被分布地布置在感测放大器区域中，并且用于恢复操作的多个驱动开关被集中地布置在一行的读出放大器的一端。使用网状电力线电路提供过驱动的可能性。通过使用用于过驱动的驱动开关，可以利用具有大于数据线幅度的电压的数据线对执行初始感测操作，从而实现高速感测操作。驱动器的分布布置使得用于过驱动的驱动器能够在感测操作中分散地提供电流，从而减小感测放大器的远和近位置的感测电压的差异。

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