专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US5684528A Camera controlling apparatus for television conference system 失效
标题翻译：电视会议系统相机控制装置
公开(公告)号：US5684528A
公开(公告)日：1997-11-04
申请号：US566736
申请日：1995-12-04
申请人： Noriko Okutsu , Youichi Ashida , Yu Jun Cui
发明人： Noriko Okutsu , Youichi Ashida , Yu Jun Cui
IPC分类号： H04N7/15 , H04M3/56 , H04N7/14
CPC分类号： H04N7/142
摘要： A camera controlling apparatus for a television conference system wherein the turning speed of a camera is varied in response to an operation mode. The camera controlling apparatus includes a preset control section for outputting a preset control signal for moving the camera at a first turning speed to a predetermined point, and a self room manual control section for outputting a self room manual control signal for moving the camera at a second turning speed lower than the first turning speed. The camera controlling apparatus further includes a reception manual control section for outputting a reception manual control signal for moving the camera at a third turning speed lower than the second turning speed in response to a manual signal transmitted thereto by way of a communication line. Any of the control signals is inputted to a speed control section, and the camera is controlled to be turned at a turning speed represented by the thus inputted control signal by the speed control section.
摘要翻译：一种用于电视会议系统的相机控制装置，其中相机的转动速度响应于操作模式而变化。相机控制装置包括：预设控制部分，用于输出用于将照相机以第一转动速度移动到预定点的预设控制信号;以及自动室手动控制部分，用于输出用于在相机处移动相机的自室手动控制信号第二转速低于第一转速。相机控制装置还包括接收手动控制部分，用于响应于通过通信线路发送到其的手动信号，以低于第二转动速度的第三转向速度输出用于移动照相机的接收手动控制信号。任何控制信号被输入到速度控制部分，并且通过速度控制部分控制照相机以由这样输入的控制信号表示的转动速度转动。

12. 发明授权

US5003532A Multi-point conference system 失效
标题翻译：多点会议系统
公开(公告)号：US5003532A
公开(公告)日：1991-03-26
申请号：US531455
申请日：1990-05-31
申请人： Youichi Ashida , Yuji Yoshida , Hitoshi Ishiguro , Hitoshi Sato , Hiroaki Natori
发明人： Youichi Ashida , Yuji Yoshida , Hitoshi Ishiguro , Hitoshi Sato , Hiroaki Natori
IPC分类号： H04N7/15
CPC分类号： H04N7/15 , H04N7/152
摘要： A multi-point conference system for making a video conference includes a center unit having a controller and an image selector, and three or more stations respectively coupled to the center unit, where each station includes at least one camera for picking up an image to output an image data, a display for displaying an image based on an image data and a request part for making a request. The controller initially sets master, sub and participating stations in conformance with a predetermined rule. The image selector automatically supplies the image data from the master station to the sub and participating stations to be displayed on the display thereof and supplies the image data from the sub station to the master station to be displayed on the display thereof. The controller automatically sets a new master station in response to a request from the request part of an arbitrary station requesting the new master station, sets the master station prior to receiving the request as a new sub station and sets all stations other than the new master and sub stations as new participating stations.

13. 发明授权

US09136362B2 Semiconductor device having lateral element 有权
标题翻译：具有侧向元件的半导体器件
公开(公告)号：US09136362B2
公开(公告)日：2015-09-15
申请号：US13615912
申请日：2012-09-14
申请人： Takeshi Sakai , Akira Yamada , Shigeki Takahashi , Youichi Ashida , Satoshi Shiraki
发明人： Takeshi Sakai , Akira Yamada , Shigeki Takahashi , Youichi Ashida , Satoshi Shiraki
IPC分类号： H01L29/02 , H01L29/739 , H01L21/765 , H01L29/40 , H01L29/417 , H01L29/861 , H01L29/868 , H01L29/06 , H01L29/08
CPC分类号： H01L29/7394 , H01L21/765 , H01L29/0696 , H01L29/0834 , H01L29/404 , H01L29/405 , H01L29/41725 , H01L29/8611 , H01L29/868
摘要： A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second electrode is less than a voltage applied to the first electrode. The resistive field plate has a first end portion and a second end portion opposite to the first end portion. The second end portion is located closer to the second electrode than the first end portion. An impurity concentration in the second end portion is equal to or greater than 1×1018 cm−3.
摘要翻译：具有横向元件的半导体器件包括半导体衬底，衬底上的第一和第二电极以及从第一电极延伸到第二电极的电阻场板。横向元件在第一和第二电极之间通过电流。施加到第二电极的电压小于施加到第一电极的电压。电阻场板具有与第一端部相对的第一端部和第二端部。第二端部比第一端部更靠近第二电极。第二端部的杂质浓度为1×1018cm-3以上。

14. 发明授权

US08791690B2 Current sensor, inverter circuit, and semiconductor device having the same 有权
公开(公告)号：US08791690B2
公开(公告)日：2014-07-29
申请号：US13150764
申请日：2011-06-01
申请人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
发明人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
IPC分类号： G01R1/20
摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.

15. 发明授权

US08604513B2 Semiconductor device having SOI substrate 有权
标题翻译：具有SOI衬底的半导体器件
公开(公告)号：US08604513B2
公开(公告)日：2013-12-10
申请号：US12923469
申请日：2010-09-23
申请人： Youichi Ashida , Norihito Tokura , Shigeki Takahashi , Yoshiaki Nakayama , Satoshi Shiraki , Kouji Senda
发明人： Youichi Ashida , Norihito Tokura , Shigeki Takahashi , Yoshiaki Nakayama , Satoshi Shiraki , Kouji Senda
IPC分类号： H01L29/66
CPC分类号： H01L27/1203 , H01L21/76264 , H01L21/84 , H01L29/0634 , H01L29/0657 , H01L29/0692 , H01L29/1608 , H01L29/404 , H01L29/405 , H01L29/407 , H01L29/408 , H01L29/66128 , H01L29/7394 , H01L29/7824 , H01L29/8611
摘要： A semiconductor device includes: a SOI substrate; a semiconductor element having first and second impurity layers disposed in an active layer of the SOI substrate, the second impurity layer surrounding the first impurity layer; and multiple first and second conductive type regions disposed in a part of the active layer adjacent to an embedded insulation film of the SOI substrate. The first and second conductive type regions are alternately arranged. The first and second conductive type regions have a layout, which corresponds to the semiconductor element.
摘要翻译：半导体器件包括：SOI衬底; 半导体元件，其具有设置在所述SOI衬底的有源层中的第一和第二杂质层，所述第二杂质层围绕所述第一杂质层; 以及设置在与SOI衬底的嵌入式绝缘膜相邻的有源层的一部分中的多个第一和第二导电类型区域。交替地布置第一和第二导电类型区域。第一和第二导电类型区域具有对应于半导体元件的布局。

16. 发明申请

US20130075877A1 SEMICONDUCTOR DEVICE HAVING LATERAL ELEMENT 有权
标题翻译：具有横向元件的半导体器件
公开(公告)号：US20130075877A1
公开(公告)日：2013-03-28
申请号：US13615912
申请日：2012-09-14
申请人： Takeshi SAKAI , Akira Yamada , Shigeki Takahashi , Youichi Ashida , Satoshi Shiraki
发明人： Takeshi SAKAI , Akira Yamada , Shigeki Takahashi , Youichi Ashida , Satoshi Shiraki
IPC分类号： H01L29/861
CPC分类号： H01L29/7394 , H01L21/765 , H01L29/0696 , H01L29/0834 , H01L29/404 , H01L29/405 , H01L29/41725 , H01L29/8611 , H01L29/868
摘要： A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second electrode is less than a voltage applied to the first electrode. The resistive field plate has a first end portion and a second end portion opposite to the first end portion. The second end portion is located closer to the second electrode than the first end portion. An impurity concentration in the second end portion is equal to or greater than 1×1018 cm−3.
摘要翻译：具有横向元件的半导体器件包括半导体衬底，衬底上的第一和第二电极以及从第一电极延伸到第二电极的电阻场板。横向元件在第一和第二电极之间通过电流。施加到第二电极的电压小于施加到第一电极的电压。电阻场板具有与第一端部相对的第一端部和第二端部。第二端部比第一端部更靠近第二电极。第二端部的杂质浓度为1×1018cm-3以上。

17. 发明授权

US08354691B2 Lateral insulated-gate bipolar transistor 有权
标题翻译：侧面绝缘栅双极晶体管
公开(公告)号：US08354691B2
公开(公告)日：2013-01-15
申请号：US13226636
申请日：2011-09-07
申请人： Norihito Tokura , Shigeki Takahashi , Youichi Ashida , Akio Nakagawa
发明人： Norihito Tokura , Shigeki Takahashi , Youichi Ashida , Akio Nakagawa
IPC分类号： H01L29/739
CPC分类号： H01L29/7394 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/405 , H01L29/43 , H01L29/7397
摘要： A N-channel lateral insulated-gate bipolar transistor includes a semiconductor substrate, a drift layer, a collector region, a channel layer, an emitter region, a gate insulation film, a gate electrode, a collector electrode, an emitter electrode. The collector region includes a high impurity concentration region having a high impurity concentration and a low impurity concentration region having a lower impurity concentration than the high impurity concentration region. The collector electrode is in ohmic contact with the high impurity concentration region and in schottky contact with the low impurity concentration region.
摘要翻译： N沟道横向绝缘栅双极晶体管包括半导体衬底，漂移层，集电极区，沟道层，发射极区，栅极绝缘膜，栅电极，集电极，发射极。集电极区域包括具有高杂质浓度的高杂质浓度区域和杂质浓度低于高杂质浓度区域的低杂质浓度区域。集电极与高杂质浓度区域欧姆接触，与低杂质浓度区域进行肖特基接触。

18. 发明申请

US20120061726A1 LATERAL INSULATED-GATE BIPOLAR TRANSISTOR 有权
标题翻译：横向绝缘栅双极晶体管
公开(公告)号：US20120061726A1
公开(公告)日：2012-03-15
申请号：US13226636
申请日：2011-09-07
申请人： Norihito TOKURA , Shigeki Takahashi , Youichi Ashida , Akio Nakagawa
发明人： Norihito TOKURA , Shigeki Takahashi , Youichi Ashida , Akio Nakagawa
IPC分类号： H01L29/739
CPC分类号： H01L29/7394 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/405 , H01L29/43 , H01L29/7397
摘要： A N-channel lateral insulated-gate bipolar transistor includes a semiconductor substrate, a drift layer, a collector region, a channel layer, an emitter region, a gate insulation film, a gate electrode, a collector electrode, an emitter electrode. The collector region includes a high impurity concentration region having a high impurity concentration and a low impurity concentration region having a lower impurity concentration than the high impurity concentration region. The collector electrode is in ohmic contact with the high impurity concentration region and in schottky contact with the low impurity concentration region.
摘要翻译： N沟道横向绝缘栅双极晶体管包括半导体衬底，漂移层，集电极区，沟道层，发射极区，栅极绝缘膜，栅电极，集电极，发射极。集电极区域包括具有高杂质浓度的高杂质浓度区域和杂质浓度低于高杂质浓度区域的低杂质浓度区域。集电极与高杂质浓度区域欧姆接触，与低杂质浓度区域进行肖特基接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式