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    • 14. 发明授权
    • Inkjet recording method and inkjet printed matter
    • 喷墨记录方法和喷墨打印物
    • US09010917B2
    • 2015-04-21
    • US13893622
    • 2013-05-14
    • Hiroshi GotouHidetoshi FujiiKohta Akiyama
    • Hiroshi GotouHidetoshi FujiiKohta Akiyama
    • C09D11/322C09D11/36C09D11/38B41M5/00B41J2/01
    • C09D11/36B41J2/01B41M5/0023C09D11/322C09D11/38Y10T428/24802
    • An inkjet recording method includes using ink for inkjet recording containing a hydrodispersible colorant, a surfactant, water, and an organic solvent containing a polyol, an amide compound represented by the following Formula I, and an oxetane compound represented by the following Formula II; using a recording medium having a particular transfer amount of highly deionized water as measured by an automatic scanning absorptometer; and forming an image on the recording medium with the ink, wherein the ink has a particular wettability, where γ′ represents dynamic surface tension as measured by maximum bubble pressure technique and θ represents a contact angle, where R represents an alkyl group, where R3 represent a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, a cyclohexyl group, and a phenyl group.
    • 喷墨记录方法包括使用含有水分散性着色剂,表面活性剂,水和含有多元醇的有机溶剂,由下式I表示的酰胺化合物和由下式II表示的氧杂环丁烷化合物的喷墨记录用油墨; 使用由自动扫描吸收计测量的具有特定转移量的高度去离子水的记录介质; 并用油墨在记录介质上形成图像,其中油墨具有特定的润湿性,其中γ'表示通过最大气泡压力技术测量的动态表面张力; 表示接触角,其中R表示烷基,其中R 3表示氢原子,具有1至8个碳原子的烷基,环己基和苯基。
    • 20. 发明授权
    • Thin film transistor substrate and display device with oxygen-containing layer
    • 薄膜晶体管基板和含氧层的显示装置
    • US07943933B2
    • 2011-05-17
    • US12126527
    • 2008-05-23
    • Aya HinoHiroshi Gotou
    • Aya HinoHiroshi Gotou
    • H01L29/04
    • H01L27/124H01L29/458H01L29/4908
    • Disclosed herein is a TFT substrate which exhibits good characteristic properties despite the omission of the barrier metal layer to be normally interposed between the source-drain electrodes and the semiconductor layer in the TFT. The TFT substrate permits sure and direct connection with the semiconductor layer of the TFT. The thin film transistor substrate has a substrate, a semiconductor layer and source-drain electrodes. The source-drain electrodes are composed of oxygen-containing layers and thin films of pure copper or a copper alloy. The oxygen-containing layer contains oxygen such that part or all of oxygen combines with silicon in the semiconductor layer. And, the thin films of pure copper or a copper alloy connect with the semiconductor layer of the thin film transistor through the oxygen-containing layers.
    • 本文公开了尽管不存在通常插入在TFT中的源 - 漏电极和半导体层之间的阻挡金属层的表现出良好的特性的TFT基板。 TFT基板可以确保和直接连接TFT的半导体层。 薄膜晶体管基板具有基板,半导体层和源极 - 漏极电极。 源漏电极由含氧层和纯铜或铜合金薄膜构成。 含氧层含有氧,使得部分或全部氧与半导体层中的硅结合。 并且,纯铜或铜合金的薄膜通过含氧层与薄膜晶体管的半导体层连接。