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11. 发明授权

US08270850B2 Demodulator and receiving device 失效
标题翻译：解调器和接收装置
公开(公告)号：US08270850B2
公开(公告)日：2012-09-18
申请号：US12621949
申请日：2009-11-19
申请人： Takashi Shimizu , Koji Terada , Kiyomi Narita , Kazuyuki Mori
发明人： Takashi Shimizu , Koji Terada , Kiyomi Narita , Kazuyuki Mori
IPC分类号： H04B10/06
CPC分类号： H04B10/677
摘要： A demodulator includes: a splitter that branches a differential phase shift keying optical signal into a first branched optical signal passing through a first optical path and a second branched optical signal passing through a second optical path; a multiplexer that multiplexes the first branched optical signal having passed through the first optical path and the second branched optical signal having passed through the second optical path and makes interference between the first branched optical signal and the second branched optical signal; and a double refraction medium that reduces difference between phase differences between each polarized wave between the first branched optical signal and the second branched optical signal multiplexed by the multiplexer.
摘要翻译：解调器包括：分离器，其将差分相移键控光信号分支成通过第一光路的第一分支光信号和通过第二光路的第二分支光信号; 复用多路复用器，其经过第一光路的第一分支光信号和穿过第二光路的第二分支光信号，并使第一分支光信号和第二分支光信号之间产生干涉; 以及双折射介质，其减小由所述多路复用器复用的所述第一分支光信号与所述第二分支光信号之间的每个极化波之间的相位差之间的差异。

12. 发明申请

US20120123634A1 CONTROL APPARATUS 有权
标题翻译：控制装置
公开(公告)号：US20120123634A1
公开(公告)日：2012-05-17
申请号：US13292413
申请日：2011-11-09
申请人： Takashi Shimizu
发明人： Takashi Shimizu
IPC分类号： G06F7/00
CPC分类号： B60R21/0173
摘要： A control apparatus for vehicles including a first vehicle compatible with an airbag-linked emergency and a second vehicle incompatible with the airbag-linked emergency is provided. The control apparatus includes: a receiver section for receiving an airbag signal from an airbag apparatus; an abnormality determination section for determining that the airbag apparatus is abnormal when the receiver section does not receive the airbag signal from the airbag apparatus; and a control section for activating the abnormality determination section when the control apparatus is mounted to the first vehicle, and for deactivating the abnormality determination section when the control apparatus is mounted to the second vehicle.
摘要翻译：提供一种用于车辆的控制装置，其包括与气囊连接的紧急情况兼容的第一车辆和与气囊连接的紧急情况不兼容的第二车辆。控制装置包括：接收部，用于从气囊装置接收气囊信号; 异常判定部，其用于当所述接收部未从所述气囊装置接收到所述气囊信号时，判定为所述气囊装置异常; 以及控制部，其用于当所述控制装置安装到所述第一车辆时激活所述异常判定部，并且用于当所述控制装置安装到所述第二车辆时停止所述异常判定部。

13. 发明申请

US20120052600A1 MANUFACTURING METHOD AND APPARATUS FOR SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法和装置
公开(公告)号：US20120052600A1
公开(公告)日：2012-03-01
申请号：US13217736
申请日：2011-08-25
申请人： Masaki Kamimura , Takashi Shimizu , Kunihiro Miyazaki
发明人： Masaki Kamimura , Takashi Shimizu , Kunihiro Miyazaki
IPC分类号： H01L21/66 , H01L21/306 , B65D85/86 , B05C11/00
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/32194 , G05B2219/32198 , G05B2219/45031 , Y02P90/22
摘要： A manufacturing method for a semiconductor device, comprising: performing first processing on a plurality of wafers in a first processing order in a first processing apparatus; obtaining a processed amount with respect to each of the plurality of wafers in the first processing; obtaining a processed amount with respect to each of the plurality of wafers by second processing in a second processing apparatus after the first processing; deciding a second processing order, which is different from the first processing order, from the processed amount with respect to each of the plurality of wafers by the first processing and the processed amount with respect to each of the plurality of wafers by the second processing; and performing the second processing on the plurality of wafers in the second processing order in the second processing apparatus.
摘要翻译：一种半导体器件的制造方法，包括：在第一处理装置中以第一处理顺序对多个晶片执行第一处理; 在所述第一处理中获得关于所述多个晶片中的每一个的处理量; 通过在第一处理之后的第二处理装置中的第二处理来获得关于多个晶片中的每一个的处理量; 通过所述第一处理，通过所述第一处理和相对于所述多个晶片中的每一个处理的量，通过所述第二处理来确定与所述第一处理顺序不同的第二处理顺序相对于所述多个晶片中的每一个的处理量; 以及在所述第二处理装置中以所述第二处理顺序对所述多个晶片执行所述第二处理。

14. 发明授权

US08089117B2 Semiconductor structure 有权
标题翻译：半导体结构
公开(公告)号：US08089117B2
公开(公告)日：2012-01-03
申请号：US12065901
申请日：2006-08-22
申请人： Takashi Shimizu
发明人： Takashi Shimizu
IPC分类号： H01L29/49
CPC分类号： C23C16/406 , H01L21/28088 , H01L21/28273 , H01L23/53238 , H01L29/42384 , H01L29/4908 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/66666 , H01L29/66825 , H01L29/7827 , H01L29/785 , H01L29/78642 , H01L29/78648 , H01L29/7881 , H01L2924/0002 , H01L2924/00
摘要： A desired property for a metal gate electrode layer is that it can cover a three-dimensional semiconductor structure having a microstructure with high step coverage. Another desired property for the metal gate electrode layer is that the surface of a deposited electrode layer is flat on a nanometer scale, enables a dielectric layer for electrical insulation to be coated without performing special planization after deposition of the electrode layer. Furthermore, another desired property for the metal gate electrode layer is that it has the similar etching workability to materials used in an ordinary semiconductor manufacturing process. Furthermore, another desired property for the metal gate electrode layer is that it has a structure in which diffusion of impurity is suppressed due to homogeneity thereof and the absence of grain boundaries. It was found that an amorphous metal electrode is most suitable for realizing the metal gate electrode layer satisfying the above-mentioned properties and thereby the present invention was achieved.
摘要翻译：用于金属栅电极层的期望性质是其可以覆盖具有高阶覆盖的微结构的三维半导体结构。用于金属栅极电极层的另一期望性质是沉积电极层的表面是纳米级的平坦的，能够在沉积电极层之后进行电绝缘的电介质层而不进行特殊的平面化。此外，对于金属栅电极层的另一期望特性是它具有与在普通半导体制造工艺中使用的材料相似的蚀刻可加工性。此外，用于金属栅电极层的另一期望性质是其具有由于其均匀性和不存在晶界而抑制杂质扩散的结构。发现非晶金属电极最适于实现满足上述性能的金属栅电极层，从而实现了本发明。

15. 发明申请

US20110316095A1 Semiconductor device and manufacturing method thereof 审中-公开
公开(公告)号：US20110316095A1
公开(公告)日：2011-12-29
申请号：US13137650
申请日：2011-08-31
申请人： Takashi Shimizu
发明人： Takashi Shimizu
IPC分类号： H01L29/772
CPC分类号： H01L21/28202 , H01L21/823462 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A semiconductor device includes a silicon substrate, an SiO film, and a High-K film. The SiO film is first formed on the silicon substrate and then subjected to a nitridation process to obtain an SiON film from the SiO film. The nitridation process is performed such that nitrogen concentration in the SiO film decreases from an interface with the silicon substrate below and an interface with the High-K film above, and nitrogen having predetermined concentration or more is introduced in a thickness within a range of 0.2 nm to 1 nm from the interface with the silicon substrate. The SiON film is etched up to a depth to which nitrogen of the predetermined concentration or more is introduced. The High-K film is then formed on the SiON film.

16. 发明授权

US07989896B2 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07989896B2
公开(公告)日：2011-08-02
申请号：US12612238
申请日：2009-11-04
申请人： Tomonori Aoyama , Seiji Inumiya , Kazuaki Nakajima , Takashi Shimizu
发明人： Tomonori Aoyama , Seiji Inumiya , Kazuaki Nakajima , Takashi Shimizu
IPC分类号： H01L27/11
CPC分类号： H01L21/823462 , H01L21/823412 , H01L21/823807 , H01L21/823857 , H01L27/0629 , H01L29/517
摘要： A method of fabricating a semiconductor device according to one embodiment includes: laying out a first region, a second region, a third region and a fourth region on a semiconductor substrate by forming an element isolation region in the semiconductor substrate; forming a first insulating film on the first region and the second region; forming a first semiconductor film on the first insulating film; forming a second insulating film and an aluminum oxide film thereon on the fourth region after forming of the first semiconductor film; forming a third insulating film and a lanthanum oxide film thereon on the third region after forming of the first semiconductor film; forming a high dielectric constant film on the aluminum oxide film and the lanthanum oxide film; forming a metal film on the high dielectric constant film; forming a second semiconductor film on the first semiconductor film and the metal film; and patterning the first insulating film, the first semiconductor film, the second insulating film, the aluminum oxide film, the third insulating film, the lanthanum oxide film, the high dielectric constant film, the metal film and the second semiconductor film.
摘要翻译：根据一个实施例的制造半导体器件的方法包括：通过在半导体衬底中形成元件隔离区，在半导体衬底上铺设第一区域，第二区域，第三区域和第四区域; 在所述第一区域和所述第二区域上形成第一绝缘膜; 在所述第一绝缘膜上形成第一半导体膜; 在形成第一半导体膜之后的第四区域上形成第二绝缘膜和氧化铝膜; 在形成第一半导体膜之后，在第三区域上形成第三绝缘膜和氧化镧膜; 在氧化铝膜和氧化镧膜上形成高介电常数膜; 在高介电常数膜上形成金属膜; 在所述第一半导体膜和所述金属膜上形成第二半导体膜; 以及图案化第一绝缘膜，第一半导体膜，第二绝缘膜，氧化铝膜，第三绝缘膜，氧化镧膜，高介电常数膜，金属膜和第二半导体膜。

17. 发明授权

US07961993B2 Optical switch and control method of optical switch, and control method of MEMS device 有权
标题翻译：光开关的光开关和控制方法以及MEMS器件的控制方法
公开(公告)号：US07961993B2
公开(公告)日：2011-06-14
申请号：US12292278
申请日：2008-11-14
申请人： Takashi Shimizu , Kazuyuki Mori
发明人： Takashi Shimizu , Kazuyuki Mori
IPC分类号： G02B6/26 , G02B26/08
CPC分类号： G02B6/359 , G02B6/3518 , G02B6/357 , Y10S359/90
摘要： A control section of an optical switch calculates information relating to a polarization amount in an insulating film at each predetermined time, to update the information relating to the polarization amount in the insulating film. On the other hand, when a drive voltage is applied to a MEMS mirror, an initial value of the drive voltage corresponding to an input setting command is read out from an initial value memory, and also, the information relating to the polarization amount in the insulating film is read out from the polarization amount memory, and the initial value of the drive voltage is corrected according to the read information relating to the polarization amount in the insulating film, to thereby set a new drive voltage, and the new drive voltage is applied on electrodes of the MEMS mirror.
摘要翻译：光开关的控制部分在每个预定时间计算与绝缘膜中的极化量相关的信息，以更新与绝缘膜中的极化量有关的信息。另一方面，当向MEMS反射镜施加驱动电压时，从初始值存储器读出对应于输入设定指令的驱动电压的初始值，并且还将与从极化量存储器读出绝缘膜，根据与绝缘膜中的极化量相关的读取信息来校正驱动电压的初始值，从而设定新的驱动电压，新的驱动电压为施加在MEMS反射镜的电极上。

18. 发明申请

US20110110117A1 Optical member and backlight using the same 审中-公开
标题翻译：光学构件和背光使用相同
公开(公告)号：US20110110117A1
公开(公告)日：2011-05-12
申请号：US10590872
申请日：2005-02-24
申请人： Masashi Takai , Sachiko Ando , Yohei Funabashi , Yasumaro Toshima , Takashi Shimizu , Masayuki Nakatani , Reiko Takahashi , Hiroshi Matsuyama
发明人： Masashi Takai , Sachiko Ando , Yohei Funabashi , Yasumaro Toshima , Takashi Shimizu , Masayuki Nakatani , Reiko Takahashi , Hiroshi Matsuyama
IPC分类号： F21V8/00 , G02B1/10 , G09F13/04
CPC分类号： G02B1/18 , G02B1/105 , G02B5/02 , G02B6/0035 , G02B6/0051
摘要： There is provided a light diffusive plate and a light guide plate, in which the generation of deflection, a cause of defective imaging, can be prevented.On both surfaces and/or end surfaces of a light diffusive plate 1 made of synthetic resin, a moisture proof layer 2 made of a material having lower vapor permeability than that of the light diffusive plate 1 is formed to produce a light diffusive plate 3. On both surfaces and/or end surfaces of a light guide plate 1 made of synthetic resin, which has at least on end as a light incident surface and a surface almost orthogonal with it as a light emergent surface, a moisture proof layer 2 made of a material having lower vapor permeability than that of the light guide plate 1 is formed to produce a light guide plate 3.
摘要翻译：提供了一种光漫射板和导光板，其中可以防止产生偏转，导致成像不良的原因。在由合成树脂制成的光漫射板1的两个表面和/或端面上形成由透光率低于光漫射板1的材料制成的防潮层2，以产生光扩散板3。在由合成树脂制成的导光板1的至少一端作为光入射面的表面和/或表面几乎与其作为光出射表面几乎正交的两面和/或端面上，形成防潮层2 形成透光率低于导光板1的材料，以制造导光板3。

19. 外观设计

USD635412S1 Grater 有权
公开(公告)号：USD635412S1
公开(公告)日：2011-04-05
申请号：US29370430
申请日：2010-07-15
申请人： Takashi Shimizu
设计人： Takashi Shimizu

20. 发明授权

US07891961B2 Mounting structure of discharge valve in scroll compressor 有权
标题翻译：涡旋压缩机排气阀的安装结构
公开(公告)号：US07891961B2
公开(公告)日：2011-02-22
申请号：US12506008
申请日：2009-07-20
申请人： Takashi Shimizu , Yoshitaka Shibamoto , Kazuhiro Furusho , Kazutaka Hori , Takazo Sotojima , Masanori Masuda
发明人： Takashi Shimizu , Yoshitaka Shibamoto , Kazuhiro Furusho , Kazutaka Hori , Takazo Sotojima , Masanori Masuda
IPC分类号： F01C1/02 , F03C2/00
CPC分类号： F04C29/128 , F04C18/0215 , F04C18/045 , F04C23/008 , F04C28/16 , F16K15/16
摘要： A bolt hole receiving a fixing bolt is formed in a portion of an end plate overlapping an annular piston or a fixed wrap as viewed in a thickness direction of the end plate to open at the back face of the end plate. In fixing a discharge valve to the end plate, the fixing bolt is screwed into the bolt hole.
摘要翻译：在端板的厚度方向观察时，在端板重叠的环形活塞或固定保持件的一部分上形成有接合固定螺栓的螺栓孔，以在端板的背面开口。在将排气阀固定到端板上时，固定螺栓拧入螺栓孔中。

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