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11. 发明授权

US08284811B2 Gallium nitride-based semiconductor laser diode 有权
标题翻译：氮化镓基半导体激光二极管
公开(公告)号：US08284811B2
公开(公告)日：2012-10-09
申请号：US12837143
申请日：2010-07-15
申请人： Takamichi Sumitomo , Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Katsushi Akita , Takashi Kyono
发明人： Takamichi Sumitomo , Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Katsushi Akita , Takashi Kyono
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/3202 , H01S2302/00
摘要： Provided is a III-nitride semiconductor laser diode capable of lasing to emit light of not less than 500 nm with use of a semipolar plane. Since an active layer 29 is provided so as to generate light at the wavelength of not less than 500 nm, the wavelength of light to be confined into a core semiconductor region 19 is a long wavelength. A first optical guide layer 27 is provided with a two-layer structure, and a second optical guide layer 31 is provided with a two-layer structure. A material of a cladding layer 21 comprised of at least either of AlGaN and InAlGaN is different from the III-nitride semiconductor, and the thickness D15 of a first epitaxial semiconductor region 15 is larger than the thickness D19 of the core semiconductor region 19; however, the misfit dislocation densities at first to third interfaces J1, J2 and J3 are not more than 1×106 cm−1, thereby preventing lattice relaxation from occurring in the semiconductor layers at these interfaces J1, J2 and J3 because of the c-plane that acts as a slip plane.
摘要翻译：提供了能够利用半极性平面发光的不少于500nm的光的III族氮化物半导体激光二极管。由于设置有源层29以产生波长不小于500nm的光，所以被限制在芯半导体区域19中的光的波长是长波长。第一光导层27设置有两层结构，第二光导层31设置有两层结构。由AlGaN和InAlGaN中的至少一个组成的包覆层21的材料与III族氮化物半导体不同，第一外延半导体区域15的厚度D15大于芯半导体区域19的厚度D19; 然而，第一至第三界面J1，J2和J3处的失配位错密度不大于1×106cm-1，从而防止在这些界面J1，J2和J3处的半导体层中发生晶格弛豫，因为c- 作为滑行平面的飞机。

12. 发明授权

US08207544B2 Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device 失效
标题翻译： III族氮化物半导体器件，外延衬底以及III族氮化物半导体器件的制造方法
公开(公告)号：US08207544B2
公开(公告)日：2012-06-26
申请号：US12836144
申请日：2010-07-14
申请人： Yohei Enya , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei Enya , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L33/00 , H01L29/04
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/3202 , H01S5/34333 , H01S2302/00
摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle ALPHA with respect to the c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes a plurality of GaN-based semiconductor layers. The reference axis is inclined at a first angle ALPHA1 in the range of not less than 10 degrees, and less than 80 degrees from the c-axis of the III-nitride semiconductor toward a first crystal axis, either one of the m-axis and a-axis. The reference axis is inclined at a second angle ALPHA2 in the range of not less than −0.30 degrees and not more than +0.30 degrees from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. The predetermined angle, the first angle, and the second angle have a relation of ALPHA=(ALPHA12+ALPHA22)1/2. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.
摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，具有主要表面沿垂直于相对于III型氮化物半导体的c轴倾斜预定角度ALPHA的参考轴线的第一参考平面延伸，氮化物半导体，以及设置在支撑基体的主表面上的外延半导体区域。外延半导体区域包括多个GaN基半导体层。基准轴在距离III族氮化物半导体的c轴朝向第一晶轴不小于10度且小于80度的范围内以第一角度ALPHA1倾斜，m轴和 a轴。参考轴在距离III族氮化物半导体的c轴朝向第二晶轴不小于-0.30度且不大于+0.30度的范围内以第二角度ALPHA2倾斜，另一个m- 轴和a轴。预定角度，第一角度和第二角度具有ALPHA =（ALPHA12 + ALPHA22）1/2的关系。外延半导体区域的最外表面的形态包括多个凹坑。坑的坑密度不大于5×104cm-2。

13. 发明申请

US20110227035A1 NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US20110227035A1
公开(公告)日：2011-09-22
申请号：US12999987
申请日：2010-06-14
申请人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Takamichi Sumitomo , Masaki Ueno
发明人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Takamichi Sumitomo , Masaki Ueno
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , H01L33/12
摘要： Provided is a nitride-based semiconductor light-emitting element having improved carrier injection efficiency into the well layer. The element comprises a substrate (5) formed from a hexagonal-crystal gallium nitride semiconductor; an n-type gallium nitride semiconductor region (7) disposed on a main surface (S1) of the substrate (5); a light-emitting layer (11) having a single quantum well structure disposed on the n-type gallium nitride semiconductor region (7); and a p-type gallium nitride semiconductor region (19) disposed on the light-emitting layer (11). The light-emitting layer (11) is disposed between the n-type gallium nitride semiconductor region (7) and the p-type gallium nitride semiconductor region (19). The light-emitting layer (11) comprises a well layer (15), a barrier layer (13), and a barrier layer (17). The well layer (15) is InGaN. The main surface (S1) extends, from a surface perpendicular to the c axial direction of the hexagonal-crystal gallium nitride semiconductor, along a reference plane (S5) inclined at an angle of inclination within a range between 63° and 80° or between 100° and 117°.
摘要翻译：提供了一种具有提高到阱层的载流子注入效率的氮化物基半导体发光元件。元件包括由六方晶系氮化镓半导体形成的基板（5）设置在所述基板（5）的主表面（S1）上的n型氮化镓半导体区域（7）。具有设置在n型氮化镓半导体区域（7）上的单量子阱结构的发光层（11）; 和设置在发光层（11）上的p型氮化镓半导体区域（19）。发光层（11）设置在n型氮化镓半导体区域（7）和p型氮化镓半导体区域（19）之间。发光层（11）包括阱层（15），阻挡层（13）和阻挡层（17）。阱层（15）是InGaN。主表面（S1）从垂直于六方晶系氮化镓半导体的c轴方向的表面沿着在63°至80°之间的范围内倾斜的参考平面（S5）延伸，或者在 100°和117°。

14. 发明申请

US20110124142A1 GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM 审中-公开
标题翻译： GAN半导体光学元件，制造GAN半导体光学元件的方法，外延晶体和用于生长GAN半导体膜的方法
公开(公告)号：US20110124142A1
公开(公告)日：2011-05-26
申请号：US13019067
申请日：2011-02-01
申请人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Katsushi Akita , Takashi Kyono , Takamichi Sumitomo , Takao Nakamura
发明人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Katsushi Akita , Takashi Kyono , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01L33/04
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L33/0075 , H01L33/16 , H01L33/32 , H01S5/34333
摘要： In a GaN based semiconductor optical device 11a, the primary surface 13a of the substrate 13 tilts at a tilting angle toward an m-axis direction of the first GaN based semiconductor with respect to a reference axis “Cx” extending in a direction of a c-axis of the first GaN based semiconductor, and the tilting angle is 63 degrees or more, and is less than 80 degrees. The GaN based semiconductor epitaxial region 15 is provided on the primary surface 13a. On the GaN based semiconductor epitaxial region 15, an active layer 17 is provided. The active layer 17 includes one semiconductor epitaxial layer 19. The semiconductor epitaxial layer 19 is composed of InGaN. The thickness direction of the semiconductor epitaxial layer 19 tilts with respect to the reference axis “Cx.” The reference axis “Cx” extends in the direction of the [0001] axis. This structure provides the GaN based semiconductor optical device that can reduces decrease in light emission characteristics due to the indium segregation.
摘要翻译：在GaN系半导体光学元件11a中，基板13的主表面13a相对于沿c方向延伸的基准轴“Cx”朝向第一GaN基半导体的m轴方向倾斜倾斜第一GaN基半导体的角度，倾斜角度为63度以上，小于80度。 GaN基半导体外延区域15设置在主表面13a上。在GaN基半导体外延区域15上，设置有源层17。有源层17包括一个半导体外延层19.半导体外延层19由InGaN构成。半导体外延层19的厚度方向相对于基准轴“Cx”倾斜。参考轴“Cx”沿[0001]轴的方向延伸。这种结构提供可以减少由于铟偏析导致的发光特性的降低的GaN基半导体光学器件。

15. 发明授权

US07851243B1 Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device 有权
标题翻译：基于氮化物的半导体光学器件，用于氮化物半导体光学器件的外延晶片，以及制造半导体发光器件的方法
公开(公告)号：US07851243B1
公开(公告)日：2010-12-14
申请号：US12852060
申请日：2010-08-06
申请人： Masaki Ueno , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
发明人： Masaki Ueno , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01L21/205
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L33/18 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3407 , H01S2301/173 , H01S2304/04
摘要： In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.
摘要翻译：在基于氮化物的半导体光学器件LE1中，应变阱层21沿着从与c轴方向延伸的参考轴正交的平面以倾斜角α倾斜的参考平面SR1延伸。倾斜角α在大于59度至小于80度或大于150度至小于180度的范围内。氮化镓基半导体层P与具有负的压电场的发光层SP相邻，并且具有比阻挡层的带隙大的带隙。阱层W3中的压电场的方向指向从n型层到p型层的方向，并且氮化镓基半导体层P中的压电场指向从p型层的方向，类型层到n型层。因此，价带，而不是导带，在发光层SP-和氮化镓基半导体层P之间的界面处有下沉。

16. 发明授权

US08619828B2 Group III nitride semiconductor laser diode 失效
标题翻译： III族氮化物半导体激光二极管
公开(公告)号：US08619828B2
公开(公告)日：2013-12-31
申请号：US12836065
申请日：2010-07-14
申请人： Katsushi Akita , Yohei Enya , Takashi Kyono , Masahiro Adachi , Shinji Tokuyama , Yusuke Yoshizumi , Takamichi Sumitomo , Masaki Ueno
发明人： Katsushi Akita , Yohei Enya , Takashi Kyono , Masahiro Adachi , Shinji Tokuyama , Yusuke Yoshizumi , Takamichi Sumitomo , Masaki Ueno
IPC分类号： H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/3202
摘要： A group III nitride substrate has a semi-polar primary surface. A first cladding layer has a first conductivity type, and comprises aluminum-containing group III nitride. The first cladding layer is provided on the substrate. An active layer is provided on the first cladding layer. A second cladding layer has a second conductivity type, and comprises aluminum-containing group III nitride. The second cladding layer is provided on the active layer. An optical guiding layer is provided between the first cladding layer and the active layer and/or between the second cladding layer and the active layer. The optical guiding layer comprises a first layer comprising Inx1Ga1-x1N (0≦x1
摘要翻译： III族氮化物衬底具有半极性主表面。第一包层具有第一导电类型，并且包括含铝的III族氮化物。第一包层设置在基板上。在第一包层上设置有源层。第二包层具有第二导电类型，并且包括含铝的III族氮化物。第二包覆层设置在有源层上。在第一包层和有源层之间和/或第二包层和有源层之间设置光导层。光引导层包括包含In x Ga 1-x N（0 @ x1 <1）的第一层和包括In x 2 Ga 1-x 2 N（x 1

17. 发明授权

US08487327B2 Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device 失效
标题翻译： III族氮化物半导体器件，外延衬底以及III族氮化物半导体器件的制造方法
公开(公告)号：US08487327B2
公开(公告)日：2013-07-16
申请号：US13484776
申请日：2012-05-31
申请人： Yohei Enya , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei Enya , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L33/00 , H01L29/04
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/3202 , H01S5/34333 , H01S2302/00
摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.
摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，其具有沿与第一参考平面垂直的第一参考平面延伸的第一表面，所述第一参考平面垂直于相对于III族氮化物的c轴以预定角度倾斜的参考轴半导体和设置在支撑基体的主表面上的外延半导体区域。外延半导体区域包括GaN基半导体层。基准轴从III族氮化物半导体的c轴朝向第一晶轴倾斜第一角度，即m轴或a轴。基准轴从III族氮化物半导体的c轴向第二晶轴倾斜第二角度，m轴和a轴的另一方倾斜。外延半导体区域的最外表面的形态包括多个凹坑。坑的坑密度不大于5×104cm-2。

18. 发明授权

US08405066B2 Nitride-based semiconductor light-emitting device 有权
标题翻译：氮化物系半导体发光元件
公开(公告)号：US08405066B2
公开(公告)日：2013-03-26
申请号：US12999987
申请日：2010-06-14
申请人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Takamichi Sumitomo , Masaki Ueno
发明人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Takamichi Sumitomo , Masaki Ueno
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , H01L33/12
摘要： A nitride-based semiconductor light-emitting device having enhanced efficiency of carrier injection to a well layer is provided. The nitride-based semiconductor light-emitting device comprises a hexagonal gallium nitride-based semiconductor substrate 5, an n-type gallium nitride-based semiconductor region 7 disposed on the principal surface S1 of the substrate 5, a light-emitting layer 11 having a single-quantum-well structure disposed on the n-type gallium nitride-based semiconductor region 7, and a p-type gallium nitride-based semiconductor region 19 disposed on the light-emitting layer 11. The light-emitting layer 11 is disposed between the n-type gallium nitride-based semiconductor region 7 and the p-type gallium nitride-based semiconductor region 19. The light-emitting layer 11 includes a well layer 15 and barrier layers 13 and 17. The well layer 15 comprises InGaN. The principal surface S1 extends along a reference plane S5 tilting from a plane perpendicular to the c-axis of the hexagonal gallium nitride-based semiconductor at a tilt angle in a range of not less than 63 degrees and not more than 80 degrees or in a range of not less than 100 degrees and not more than 117 degrees.
摘要翻译：提供了一种具有提高载流子注入阱层效率的氮化物基半导体发光器件。氮化物系半导体发光元件包括六方晶系氮化镓系半导体基板5，配置在基板5的主面S1上的n型氮化镓系半导体区域7，发光层11具有设置在n型氮化镓系半导体区域7上的单量子阱结构以及配置在发光层11上的p型氮化镓系半导体区域19.发光层11配置在 n型氮化镓基半导体区域7和p型氮化镓基半导体区域19.发光层11包括阱层15和势垒层13和17.阱层15包括InGaN。主表面S1沿着垂直于六方晶系氮化镓基半导体的c轴的平面倾斜的参考平面S5延伸，倾斜角度在不小于63度且不大于80度的范围内，或者在范围不小于100度且不大于117度。

19. 发明授权

US08183071B2 Method for producing nitride semiconductor optical device and epitaxial wafer 失效
标题翻译：氮化物半导体光学器件和外延晶片的制造方法
公开(公告)号：US08183071B2
公开(公告)日：2012-05-22
申请号：US12539887
申请日：2009-08-12
申请人： Katsushi Akita , Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Yusuke Yoshizumi , Masaki Ueno , Takao Nakamura
发明人： Katsushi Akita , Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Yusuke Yoshizumi , Masaki Ueno , Takao Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L33/0075 , H01L33/06 , H01L33/16 , H01S2304/04
摘要： In step S106, an InXGa1-XN well layer is grown on a semipolar main surface between times t4 and t5 while a temperature in a growth furnace is maintained at temperature TW. In step S107, immediately after completion of the growth of the well layer, the growth of a protective layer covering the main surface of the well layer is initiated at temperature TW. The protective layer is composed of a gallium nitride-based semiconductor with a band gap energy that is higher than that of the well layer and equal to or less than that of a barrier layer. In step S108, the temperature in the furnace is changed from temperatures TW to TB before the barrier layer growth. The barrier layer composed of the gallium nitride-based semiconductor is grown on the protective layer between times t8 and t9 while the temperature in the furnace is maintained at temperature TB.
摘要翻译：在步骤S106中，在时间t4〜t5的半极性主面上生长InXGa1-XN阱层，而生长炉内的温度保持在温度TW。在步骤S107中，在阱层生长完成之后，在温度TW下开始覆盖阱层主表面的保护层的生长。保护层由氮化镓系半导体构成，带隙能量高于阱层的带隙能量，并且等于或小于势垒层的带隙能量。在步骤S108中，在阻挡层生长之前，炉中的温度从温度TW变为TB。由氮化镓系半导体构成的阻挡层在时刻t8〜t9的保护层上生长，同时炉内的温度保持在温度TB。

20. 发明申请

US20120080659A1 NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：基于氮化物的半导体光学器件，用于基于氮化物的半导体光学器件的外延晶体管，以及制造半导体发光器件的方法
公开(公告)号：US20120080659A1
公开(公告)日：2012-04-05
申请号：US13279005
申请日：2011-10-21
申请人： Masaki UENO , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
发明人： Masaki UENO , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01L33/04
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L33/18 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3407 , H01S2301/173 , H01S2304/04
摘要： In the nitride based semiconductor optical device, the strained well layers extend along a reference plane tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. A gallium nitride based semiconductor layer is adjacent to a light-emitting layer with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer and the gallium nitride based semiconductor layer.
摘要翻译：在基于氮化物的半导体光学器件中，应变阱层沿着从与c轴方向延伸的参考轴正交的平面以倾斜角α倾斜的参考平面延伸。氮化镓基半导体层与具有负的压电场的发光层相邻，并且具有比阻挡层的带隙大的带隙。阱层中的压电场的方向指向从n型层到p型层的方向，并且氮化镓基半导体层中的压电场沿着从p型层的方向到n型层。因此，价带，而不是导带，在发光层和氮化镓基半导体层之间的界面处有下沉。

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