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11. 发明授权

US5599493A Method of producing silicon nitride ceramic component 失效
标题翻译：氮化硅陶瓷部件的制造方法
公开(公告)号：US5599493A
公开(公告)日：1997-02-04
申请号：US429067
申请日：1995-04-26
申请人： Yasushi Ito , Takehisa Yamamoto , Takao Nishioka , Akira Yamakawa , Osamu Komura
发明人： Yasushi Ito , Takehisa Yamamoto , Takao Nishioka , Akira Yamakawa , Osamu Komura
IPC分类号： C04B41/80 , B24B1/00 , C04B35/584 , C04B35/593 , C04B35/599 , C04B35/63 , C04B41/00 , B29C71/02
CPC分类号： C04B41/009 , C04B35/5935 , C04B41/00
摘要： A method of producing a silicon nitride ceramic component, comprising: grinding a silicon nitride sintered body comprising .alpha.--Si.sub.3 N.sub.4 having an average grain size of 0.5 .mu.m or smaller and .beta.'-sialon having an average grain size of 3 .mu.m or smaller in major axis and 1 .mu.m or smaller in minor axis into a predetermined size with a surface roughness of 1-7 .mu.m in ten-point mean roughness; heat treating the same at temperature range of 800.degree.-1200.degree. C. in the air; and standing it to allow to be cooled, whereby providing a residual stress in the ground surface before and after the heat treating as a residual compressive stress at a ratio of 1 or higher of the residual compressive stress after the heat treating to that before the heat treating (residual compressive stress after the heat treating/residual compressive stress before the heat treating), preferably 5 or more.
摘要翻译：一种氮化硅陶瓷成分的制造方法，其特征在于，包括：研磨包含平均粒径为0.5μm以下的α-Si 3 N 4，平均粒径为3μm以下的β'赛隆的氮化硅烧结体长轴和1μm或更小的短轴成预定尺寸，十点平均粗糙度的表面粗糙度为1-7μm; 在空气中在800〜1200℃的温度范围进行热处理; 并将其放置以允许冷却，由此在热处理之前和之后的地面中提供作为残余压应力的残余应力在热处理后的剩余压缩应力为1或更高的比例处理（热处理后的残余压应力/热处理前的残余压应力）优选为5以上。

12. 发明授权

US5564966A Grind-machining method of ceramic materials 失效
标题翻译：陶瓷材料的研磨加工方法
公开(公告)号：US5564966A
公开(公告)日：1996-10-15
申请号：US200997
申请日：1994-02-24
申请人： Takao Nishioka , Takehisa Yamamoto , Yasushi Ito , Akira Yamakawa
发明人： Takao Nishioka , Takehisa Yamamoto , Yasushi Ito , Akira Yamakawa
IPC分类号： B24B1/00 , B24B7/22 , B24B9/06
CPC分类号： B24B7/228 , B24B1/00 , B24B9/065
摘要： A grind-machining method of ceramic materials characterized in that a peripheral speed of a grinding wheel relative to a working surface is set to 50 to 300 m/sec, a feed stroke speed of the working surface of the grinding wheel in a working direction is set to 50 to 200 m/min, and preferably, a down-feed speed of the working surface of the grinding wheel in a direction orthogonal to the surface of the workpiece is set to 0.05 to 3 mm/min. The grind-machining method of ceramic materials can reduce a grinding force at the time of grinding of ceramic materials and residual defects due to machining, and at the same time, can accomplish high machining efficiency.
摘要翻译：一种陶瓷材料的研磨加工方法，其特征在于，砂轮相对于工作面的圆周速度设定为50〜300m /秒，砂轮的工作方向的工作面的进给行程速度为设定为50〜200m / min，优选将砂轮的工作面在与工件表面正交的方向上的下降速度设定为0.05〜3mm / min。陶瓷材料的研磨加工方法可以减少磨削陶瓷材料时的磨削力和由于机械加工造成的残余缺陷，同时可以实现高加工效率。

13. 发明授权

US5275986A Silicon nitride sintered body 失效
标题翻译：氮化硅烧结体
公开(公告)号：US5275986A
公开(公告)日：1994-01-04
申请号：US941659
申请日：1992-09-08
申请人： Takehisa Yamamoto , Takao Nishioka , Tomoyuki Awazu , Akira Yamakawa
发明人： Takehisa Yamamoto , Takao Nishioka , Tomoyuki Awazu , Akira Yamakawa
IPC分类号： C04B35/584 , C04B35/593 , C04B35/597 , C04B35/58
CPC分类号： C04B35/5935 , C04B35/597
摘要： A silicon nitride sintered body comprising .alpha.-silicon nitride including .alpha.'-sialon and .beta.'-sialon including .beta.-silicon nitride in which the content of the .alpha.-silicon nitride including .alpha.'-sialon in the surface part thereof is less than its content in the inner part thereof. The silicon nitride sintered body is excellent in mechanical strength at ordinary temperature, productivity and cost efficiency.
摘要翻译：包括（α） - 硅氮化物的氮化硅烧结体，其包含（α） - 赛隆和（β）' - 赛隆，包括（β） - 氮化硅，其中（α） - 硅氮化物的含量包括（α）其表面部分中的赛隆细胞的含量小于其内部的含量。氮化硅烧结体在常温下的机械强度，生产率和成本效率优异。

14. 发明授权

US5767026A Silicon nitride ceramic and process for forming the same 失效
标题翻译：氮化硅陶瓷及其形成方法
公开(公告)号：US5767026A
公开(公告)日：1998-06-16
申请号：US633797
申请日：1996-04-10
申请人： Naoki Kondoh , Fumihiro Wakai , Yoshihiro Obata , Akira Yamakawa , Takao Nishioka , Masashi Yoshimura
发明人： Naoki Kondoh , Fumihiro Wakai , Yoshihiro Obata , Akira Yamakawa , Takao Nishioka , Masashi Yoshimura
IPC分类号： B28B1/00 , C04B35/584 , C04B35/593 , C04B35/597 , C04B35/599 , C04B35/626
CPC分类号： C04B35/593 , C04B35/597
摘要： There are provided a process for forming a silicon nitride sintered body, encompassing a sialon sintered body, by making much of the superplasticity of the sintered body intact as a simple material without formation thereof into a composite material, and a formed sintered body produced by the foregoing process. A silicon nitride sintered body (encompassing a sialon sintered body) having a relative density of at least 95% and a linear density of 120 to 250 in terms of the number of grains per 50 .mu.m in length in a two-dimensional cross section of the sintered body is formed through plastic deformation thereof at a strain rate of at most 10.sup.-1 /sec under a tensile or compressive pressure at a temperature of 1,300 to 1,700.degree. C. The formed sintered body has a degree of orientation of 5 to 80% as examined according to a method specified by Saltykov, a linear density of 80 to 200, and excellent mechanical properties especially at ordinary temperatures.
摘要翻译： PCT No.PCT / JP95 / 02026 Sec。 371日期：1996年4月10日 102（e）日期1996年4月10日PCT提交1995年10月4日PCT公布。公开号WO96 / 10546 日本特开1996年4月11日提供了一种形成氮化硅烧结体的方法，其包括塞隆烧结体，通过使烧结体的大部分超塑性作为简单材料而不被形成为复合材料而形成，并形成通过上述方法制造的烧结体。一种氮化硅烧结体（包括赛隆烧结体），其相对密度至少为95％，线密度为120-250，以二维截面为单位长度的每50微米的颗粒数该烧结体通过在1300〜1700℃的拉伸或压缩压力下以至多10-1 /秒的应变速率的塑性变形形成。所形成的烧结体的取向度为5〜80 ％，根据Saltykov规定的方法，线密度为80〜200，特别是在常温下，具有优异的机械性能。

15. 发明授权

US5605494A Facility for grinding silicon nitride ceramic workpiece 失效
标题翻译：研磨氮化硅陶瓷工件的设备
公开(公告)号：US5605494A
公开(公告)日：1997-02-25
申请号：US423726
申请日：1995-04-18
申请人： Takao Nishioka , Kenji Matsunuma , Akira Yamakawa
发明人： Takao Nishioka , Kenji Matsunuma , Akira Yamakawa
IPC分类号： B24B1/00 , B24B7/22 , B24B19/22 , B24D3/00 , C04B35/584
CPC分类号： B24B19/22 , B24B1/00
摘要： An industrially feasible method of grinding silicon nitride ceramics is disclosed and provides a sufficiently smooth surface. Namely, the surface has a maximum height-roughness Rmax of 0.1 microns or less and a ten-point mean roughness Rz of 0.05 micron. Further, with this method, surface damage can be repaired while grinding. The vertical cutting feed rate of a grinding wheel into a workpiece should be within the range of 0.005-0.1 micron for each rotation of the working surface of the wheel and change linearly or stepwise. The cutting speed of the grinding wheel in a horizontal (rotational) direction should be within the range of 25 to 75 m/sec. With this arrangement, the contact pressure and grinding heat that is generated between the workpiece and the hard abrasive grains during grinding are combined. In other words, mechanical and thermal actions are combined.
摘要翻译：公开了一种工业上可行的研磨氮化硅陶瓷的方法，并提供了足够光滑的表面。即，表面的最大高度粗糙度Rmax为0.1微米以下，十点平均粗糙度Rz为0.05微米。此外，通过该方法，可以在磨削时修复表面损伤。研磨轮进入工件的垂直切削进给速率应在车轮工作表面的每次旋转时在0.005-0.1微米的范围内，并且线性或逐步改变。砂轮在水平（旋转）方向上的切割速度应在25至75米/秒的范围内。通过这种布置，在磨削期间在工件和硬磨粒之间产生的接触压力和磨削热被组合。换句话说，组合了机械和热动作。

16. 发明授权

US5584745A Method of machining silicon nitride ceramics and silicon nitride ceramics products 失效
标题翻译：氮化硅陶瓷和氮化硅陶瓷制品的加工方法
公开(公告)号：US5584745A
公开(公告)日：1996-12-17
申请号：US162302
申请日：1993-12-06
申请人： Takao Nishioka , Kenji Matsunuma , Akira Yamakawa
发明人： Takao Nishioka , Kenji Matsunuma , Akira Yamakawa
IPC分类号： B24B1/00 , B24B7/22 , B24B19/22 , B24D3/00 , C04B35/584
CPC分类号： B24B19/22 , B24B1/00
摘要： An industrially feasible method of grinding silicon nitride ceramics is disclosed and provides a sufficiently smooth surface. Namely, the surface has a maximum height-roughness Rmax of 0.1 microns or less and a ten-point mean roughness Rz of 0.05 microns. Further, with this method, surface damage can be repaired while grinding. The vertical cutting feed rate of a grinding wheel into a work piece should be within the range of 0.005-0.1 micron for each rotation of the working surface of the wheel and change linearly or stepwise. The cutting speed of the grinding wheel in a horizontal (rotational) direction should be within the range of 25 to 75 m/sec. With this arrangement, the contact pressure and grinding heat that is generated between the work piece and the hard abrasive grains during grinding are combined. In other words, mechanical and thermal actions are combined.
摘要翻译：公开了一种工业上可行的研磨氮化硅陶瓷的方法，并提供了足够光滑的表面。即，表面的最大高度粗糙度Rmax为0.1微米以下，十点平均粗糙度Rz为0.05微米。此外，通过该方法，可以在磨削时修复表面损伤。研磨轮进入工件的垂直切削进给速率应在车轮工作表面的每次旋转中在0.005-0.1微米的范围内，并且线性或逐步改变。砂轮在水平（旋转）方向上的切割速度应在25至75米/秒的范围内。通过这种布置，在磨削期间在工件和硬磨料颗粒之间产生的接触压力和磨削热被组合。换句话说，组合了机械和热动作。

17. 发明授权

US5582215A Ceramic die for cutting and shaping lead frames and method of cleaning the same 失效
标题翻译：用于切割和成型引线框架的陶瓷模具及其清洁方法
公开(公告)号：US5582215A
公开(公告)日：1996-12-10
申请号：US391958
申请日：1995-02-21
申请人： Takehisa Yamamoto , Takao Nishioka , Akira Yamakawa , Matsuo Higuchi
发明人： Takehisa Yamamoto , Takao Nishioka , Akira Yamakawa , Matsuo Higuchi
IPC分类号： B21D28/34 , B08B3/08 , B21D28/14 , B21D37/01 , C04B35/48 , H01L21/48 , H01L23/50 , H05K13/00
CPC分类号： B21D37/01 , B08B3/08 , B21D28/14 , H01L21/4842 , H05K13/0092 , H01L2224/32245 , H01L2224/48247
摘要： A ceramic die for cutting and shaping lead frames, in which at least a working section thereof is made of a specific ceramic material having an iron and cobalt content of less than 100 ppm in total. The ceramic die can be formed in a complex shape with a high precision and has a prolonged lifetime because of its superior mechanical properties, such as high wear resistance and high strength, and less probability of adhesion of foreign matter such as solder or the lead frame material thereto. Even if the solder or lead frame material is adhered onto the die, the adhered matter can be removed through a simple procedure in a shortened time. The die is further improved by depositing a hard carbon film onto the surface of the working section.
摘要翻译：一种用于切割和成型引线框架的陶瓷模具，其中至少其工作部分由铁和钴含量总计小于100ppm的特定陶瓷材料制成。陶瓷模具可以以高精度形成复杂形状，并且由于其优异的机械性能，例如高耐磨性和高强度，并且具有较少的诸如焊料或引线框架的异物附着的可能性而具有延长的寿命材料。即使将焊料或引线框架材料粘附到模具上，可以通过简单的过程在缩短的时间内去除附着物质。通过在工作部分的表面上沉积硬质碳膜来进一步改善模具。

18. 发明授权

US5516269A Zirconia vane for rotary compressors 失效
标题翻译：旋转压缩机用氧化锆叶片
公开(公告)号：US5516269A
公开(公告)日：1996-05-14
申请号：US412199
申请日：1995-03-28
申请人： Takao Nishioka , Akira Yamakawa , Matsuo Higuchi , Harutoshi Ukegawa
发明人： Takao Nishioka , Akira Yamakawa , Matsuo Higuchi , Harutoshi Ukegawa
IPC分类号： F04C18/356 , C04B35/48 , F01C21/08 , F01C21/00
CPC分类号： F01C21/0809 , F04C2210/26 , F05C2203/0895
摘要： A zirconia vane used in a rotary compressor, the zirconia vane being formed of a partially stabilized zirconia sintered body containing 92 through 98 molar percent of ZrO.sub.2 and being stabilized with Y.sub.2 O.sub.3, zirconia crystals constituting the zirconia sintered body having a mean grain diameter of 0.1 to 0.6 .mu.m and a maximum grain diameter of not greater than 2 .mu.m, the zirconia sintered body having a mean three-point flexural strength of not less than 120 kg/mm.sup.2 measured in conformity with JIS R1601, a surface of the zirconia sintered body in contact with a rotor of the rotary compressor having a first surface roughness in a direction of rotations of the rotor, specified by a ten-point mean roughness Rz, of not greater than 1 .mu.m and a second surface roughness in a direction perpendicular to the direction of rotation of the rotor, specified by the ten-point mean roughness Rz, of not greater than 0.6 .mu.m. The vane is light-weight and has excellent sliding properties to effectively prevent cohesion and seizure in an atmosphere of a coolant of chlorine-free like an HFC.
摘要翻译：用于旋转压缩机的氧化锆叶片，氧化锆叶片由部分稳定的氧化锆烧结体形成，该氧化锆烧结体含有92至98摩尔％的ZrO 2，并且用Y 2 O 3，构成氧化锆烧结体的氧化锆晶体稳定，其平均粒径为0.1至 0.6μm，最大粒径不大于2μm，氧化锆烧结体的平均三点弯曲强度不小于120kg / mm2，符合JIS R1601，氧化锆烧结体的表面与旋转式压缩机的转子接触，该旋转压缩机的旋转压缩机的转子方向的第一表面粗糙度由十点平均粗糙度Rz指定为不大于1μm，第二表面粗糙度在垂直于由十点平均粗糙度Rz表示的转子的旋转方向不大于0.6μm。叶片重量轻，具有优异的滑动性能，有效地防止了像无卤素这样的无氯冷却剂的气氛中的内聚力和卡滞。

19. 发明授权

US5502011A Silicon nitride sintered body 失效
标题翻译：氮化硅烧结体
公开(公告)号：US5502011A
公开(公告)日：1996-03-26
申请号：US303591
申请日：1994-09-09
申请人： Takehisa Yamamoto , Takao Nishioka , Kenji Matsunuma , Akira Yamakawa
发明人： Takehisa Yamamoto , Takao Nishioka , Kenji Matsunuma , Akira Yamakawa
IPC分类号： C04B35/597 , C04B35/587 , C04B35/599
CPC分类号： C04B35/597
摘要： A silicon nitride sintered body characterized by comprising crystal grains having a linear density of 60 to 120 per 50 .mu.m length as measured in an arbitrary two-dimensional section of the sintered body. The silicon nitride sintered body has a shock compressive elasticity limit (Hugoniot-elastic limit) of 15 GPa or more and is substantially composed of crystal phases of .alpha.-silicon nitride and .beta.'-sialon. The percentages of the .alpha.-silicon nitride and .beta.'-sialon are not more than 30% and not less than 70%, respectively. The silicon nitride sintered body is particularly excellent in mechanical strengths at room temperature as well as in productivity and cost efficiency and is useful for applications as the material of parts where a particularly high impact strength is required, such as a valve train mechanism for automobile parts.
摘要翻译：一种氮化硅烧结体，其特征在于包括在烧结体的任意二维截面中测得的每50μm长度的线密度为60至120的晶粒。氮化硅烧结体具有15GPa或更高的冲击压缩弹性极限（Hugoniot弹性极限），并且基本上由α-氮化硅和β'塞隆的结晶相组成。 α硅氮化物和β' - 赛隆的百分比分别不超过30％且不小于70％。氮化硅烧结体在室温下的机械强度以及生产率和成本效率方面特别优异，作为需要特别高的冲击强度的部件的材料，例如汽车部件的气门机构。

20. 发明授权

US5204297A Silicon nitride sintered body and process for producing the same 失效
标题翻译：硅氮化物烧结体及其制造方法
公开(公告)号：US5204297A
公开(公告)日：1993-04-20
申请号：US825989
申请日：1992-01-27
申请人： Takehisa Yamamoto , Takao Nishioka , Kenji Matsunuma , Akira Yamakawa , Masaya Miyake
发明人： Takehisa Yamamoto , Takao Nishioka , Kenji Matsunuma , Akira Yamakawa , Masaya Miyake
IPC分类号： C04B35/593 , C04B35/597
CPC分类号： C04B35/5935 , C04B35/597
摘要： The present invention relates to a silicon nitride sintered body [wherein the composition of Si.sub.3 N.sub.4 -first aid (Y.sub.2 O.sub.3 +MgO)-second aid (at least one of Al.sub.2 O.sub.3 and AlN)] falls within a range defined by lines joining points A, B, C and D in FIG. 1, the crystal phase of the sintered body contains both .alpha.-Si.sub.3 N.sub.4 and .beta.'-sialon, and the relative density is 98% or more. This sintered body is produced by subjecting a green compact of the above-described source to primary sintering in a nitrogen gas atmosphere at 1300.degree. to 1700.degree. C. so that the relative density reaches 96% or more, and the precipitation ratio of the .alpha.-Si.sub.3 N.sub.4 crystal phases to the .beta.'-sialon crystal phase in the sintered body is in the range of from 40:60 to 80:20; and then subjecting the primary sintered body to secondary sintering in a nitrogen gas atmosphere at 1300.degree. to 1700.degree. C. so that the relative density reaches 98% or more. The sintered body has superior strength properties, especially at ordinary temperatures, and can be produced with a high productivity in a high yield at a low cost.

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