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11. 发明申请

US20110242588A1 AUTOMATIC FILE TRANSFER SYSTEM AND STORAGE MEDIUM 有权
标题翻译：自动文件传输系统和存储介质
公开(公告)号：US20110242588A1
公开(公告)日：2011-10-06
申请号：US13041915
申请日：2011-03-07
申请人： Mina KAWAI , Tetsuya NOSE , Hiroki INOUE
发明人： Mina KAWAI , Tetsuya NOSE , Hiroki INOUE
IPC分类号： G06F3/12
CPC分类号： G06F3/1284 , G06F3/1204 , G06F3/127
摘要： An automatic file transfer system includes a personal computer and one or more printers. The automatic file transfer system includes a transfer folder capable of containing one or more files, wherein, when the personal computer recognizes, through plug-and-play, that a printer among the one or more printers which are connected to the personal computer is powered on, if the printer currently recognized is a transfer-target printer, the personal computer executes in a repetitive manner, for the printer currently recognized, processes of: (i) determining whether or not a new file is moved into the transfer folder; and (ii) transferring, if it is determined that a new file is moved into the transfer folder, the new file to the printer currently recognized.
摘要翻译：自动文件传送系统包括个人计算机和一个或多个打印机。自动文件传送系统包括能够容纳一个或多个文件的传送文件夹，其中，当个人计算机通过即插即用来识别连接到个人计算机的一个或多个打印机中的打印机被供电时如果当前识别的打印机是转印目标打印机，则个人计算机以重复的方式对当前识别的打印机执行以下处理：（i）确定新文件是否被移动到传送文件夹中; 和（ii）如果确定新文件被移动到传送文件夹中，则将新文件传送到当前被识别的打印机。

12. 发明申请

US20130026497A1 SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD AND SILICON CARBIDE SUBSTRATE 有权
标题翻译：硅碳化硅基板制造方法和碳化硅基板
公开(公告)号：US20130026497A1
公开(公告)日：2013-01-31
申请号：US13557749
申请日：2012-07-25
申请人： Hiroki INOUE , Keiji Ishibashi , Shinsuke Fujiwara
发明人： Hiroki INOUE , Keiji Ishibashi , Shinsuke Fujiwara
IPC分类号： H01L29/38 , H01L21/20
CPC分类号： H01L21/02019 , H01L21/02013 , H01L29/1608 , H01L29/66068 , H01L29/7802
摘要： Silicon carbide single crystal is prepared. Using the silicon carbide single crystal as a material, a silicon carbide substrate having a first face and a second face located at a side opposite to the first face is formed. In the formation of the silicon carbide substrate, a first processed damage layer and a second processed damage layer are formed at the first face and second face, respectively. The first face is polished such that at least a portion of the first processed damage layer is removed and the surface roughness of the first face becomes less than or equal to 5 nm. At least a portion of the second processed damage layer is removed while maintaining the surface roughness of the second plane greater than or equal to 10 nm.
摘要翻译：制备碳化硅单晶。使用碳化硅单晶作为材料，形成具有位于与第一面相反的一侧的第一面和第二面的碳化硅衬底。在形成碳化硅衬底时，分别在第一面和第二面上形成第一加工损伤层和第二处理损伤层。抛光第一面使得第一经处理的损伤层的至少一部分被去除并且第一面的表面粗糙度变得小于或等于5nm。第二处理的损伤层的至少一部分被去除，同时保持第二平面的表面粗糙度大于或等于10nm。

13. 发明申请

US20110272087A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：制造碳化硅基板的方法
公开(公告)号：US20110272087A1
公开(公告)日：2011-11-10
申请号：US13100460
申请日：2011-05-04
申请人： Shin HARADA , Makoto SASAKI , Hiroki INOUE
发明人： Shin HARADA , Makoto SASAKI , Hiroki INOUE
IPC分类号： B32B37/02 , B32B37/10 , B32B38/10 , B32B37/16 , B32B38/00 , B32B38/04 , B32B37/06 , B32B37/14
CPC分类号： H01L29/7802 , H01L21/02002 , H01L21/187 , H01L29/1608 , H01L29/66068 , Y10T156/1052 , Y10T156/1092
摘要： Upon arranging a base portion and first and second silicon carbide layers such that each of a first backside surface of the first silicon carbide layer and a second backside surface of the second silicon carbide layer faces a first main surface of the base portion, at least one of the first and second silicon carbide layers is partially projected as a projection to outside the first main surface when viewed in a planar view. Each of the first and second backside surfaces and the first main surface are connected to each other by heating. This heating carbonizes at least a part of the projection, thereby forming a carbonized portion. When removing the projection, the carbonized portion is processed. In this way, the planar shape of a silicon carbide substrate can be readily adjusted.
摘要翻译：在布置基部和第一和第二碳化硅层时，使得第一碳化硅层的第一后侧表面和第二碳化硅层的第二后侧表面中的每一个面向基部的第一主表面，至少一个当在平面视图中观察时，第一和第二碳化硅层的一部分作为突起部分地投影到第一主表面的外部。第一和第二背面和第一主表面中的每一个通过加热彼此连接。该加热使突起的至少一部分碳化，从而形成碳化部。当移除投影时，碳化部分被处理。以这种方式，可以容易地调整碳化硅衬底的平面形状。

14. 发明申请

US20120072069A1 COMMUNICATION SYSTEM FOR VEHICLE 有权
标题翻译：车辆通讯系统
公开(公告)号：US20120072069A1
公开(公告)日：2012-03-22
申请号：US13235655
申请日：2011-09-19
申请人： Hiroki INOUE , Yuichi Ochiai , Tomohiro Kani , Ichiro Usami , Takashi Wada
发明人： Hiroki INOUE , Yuichi Ochiai , Tomohiro Kani , Ichiro Usami , Takashi Wada
IPC分类号： G06F7/00
CPC分类号： B60R25/00
摘要： A communication system for a vehicle includes: a plurality of controllers mounted on the vehicle; a data communication network for coupling the plurality of controllers with each other so that the controllers transmit data to and receive data from each other via the data communication network; a failure diagnosis device for diagnosing whether each controller is normal; a failure diagnosis activation device for activating the failure diagnosis device; and an avoiding condition setting device for setting an avoiding condition, which provides to avoid execution of the failure diagnosis when the failure diagnosis device is activated.
摘要翻译：车辆通信系统包括：安装在车辆上的多个控制器; 数据通信网络，用于将多个控制器彼此耦合，使得控制器经由数据通信网络将数据彼此传输和接收数据; 用于诊断每个控制器是否正常的故障诊断装置; 用于激活故障诊断装置的故障诊断激活装置; 以及用于设置避免条件的避免条件设置装置，其提供在故障诊断装置被激活时避免执行故障诊断。

15. 发明申请

US20110198027A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：制造碳化硅基板的方法
公开(公告)号：US20110198027A1
公开(公告)日：2011-08-18
申请号：US13025879
申请日：2011-02-11
申请人： Taro NISHIGUCHI , Makoto SASAKI , Shin HARADA , Kyoko OKITA , Hiroki INOUE , Yasuo NAMIKAWA
发明人： Taro NISHIGUCHI , Makoto SASAKI , Shin HARADA , Kyoko OKITA , Hiroki INOUE , Yasuo NAMIKAWA
IPC分类号： C09J5/10
CPC分类号： H01L29/7802 , H01L21/02002 , H01L21/7602 , H01L29/045 , H01L29/0878 , H01L29/1608 , H01L29/66068
摘要： A base portion and first and second silicon carbide substrates are disposed in a processing chamber such that a first side surface of a first silicon carbide substrate and a side surface of a second silicon carbide substrate face each other. The processing chamber has an inner surface at least a portion of which is covered with an absorbing portion including Ta atoms and C atoms. In order to connect the first and second side surfaces to each other, a temperature in the processing chamber is increased to reach or exceed a temperature at which silicon carbide can sublime. In the step of increasing the temperature, at least a portion of the absorbing portion is carbonized.
摘要翻译：基底部分和第一和第二碳化硅衬底设置在处理室中，使得第一碳化硅衬底的第一侧面和第二碳化硅衬底的侧表面彼此面对。处理室具有内表面，其至少一部分被包含Ta原子和C原子的吸收部分覆盖。为了将第一和第二侧表面彼此连接，处理室中的温度增加到达或超过碳化硅可以升华的温度。在增加温度的步骤中，吸收部分的至少一部分被碳化。

16. 发明申请

US20070222422A1 POWER SUPPLY DEVICE AND ELECTRICAL DEVICE EQUIPPED WITH THE SAME 审中-公开
标题翻译：电源装置及其装置
公开(公告)号：US20070222422A1
公开(公告)日：2007-09-27
申请号：US11688313
申请日：2007-03-20
申请人： Hiroki INOUE , Kenya KONDO
发明人： Hiroki INOUE , Kenya KONDO
IPC分类号： G05F1/00
CPC分类号： G05F1/573
摘要： A power supply device includes a first transistor connected in series between an input terminal to which an input voltage is applied and an output terminal from which an output voltage is led out; a second transistor connected between the input terminal and the output terminal in parallel with the first transistor, and which is arranged to supply a portion of the output current to a load as a detection current; a control voltage production unit arranged to produce a control voltage of the first and second transistors so that the output voltage is maintained at a specified target value; a first constant current source arranged to produce a first constant current; a variable current source arranged to produce a variable current in accordance with the output voltage; a first resistor arranged to produce a reference voltage in accordance with a combined current of the first constant current and the variable current; a second constant current source arranged to produce a second constant current; a second resistor arranged to produce a detection voltage in accordance with a combined current of the second constant current and the detection current; and an offset circuit arranged to apply an offset to the control voltage in accordance with the reference voltage and the detection voltage.
摘要翻译：电源装置包括串联连接在施加输入电压的输入端子和输出电压被输出的输出端子之间的第一晶体管; 连接在所述输入端子和所述输出端子之间的第二晶体管，与所述第一晶体管并联，并且被配置为将一部分所述输出电流提供给负载作为检测电流; 控制电压产生单元，其布置成产生第一和第二晶体管的控制电压，使得输出电压保持在指定的目标值; 布置成产生第一恒定电流的第一恒流源; 可变电流源，被布置成根据输出电压产生可变电流; 第一电阻器，被布置成根据第一恒定电流和可变电流的组合电流产生参考电压; 布置成产生第二恒定电流的第二恒流源; 第二电阻器，被布置成根据第二恒定电流和检测电流的组合电流产生检测电压; 以及偏置电路，被配置为根据所述参考电压和所述检测电压向所述控制电压施加偏移。

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