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11. 发明申请

US20050236667A1 Manufacture of semiconductor device with selective amorphousizing 审中-公开
标题翻译：具有选择性非晶化的半导体器件的制造
公开(公告)号：US20050236667A1
公开(公告)日：2005-10-27
申请号：US11169666
申请日：2005-06-30
申请人： Kenichi Goto , Hiroshi Morioka , Manabu Kojima , Kenichi Okabe
发明人： Kenichi Goto , Hiroshi Morioka , Manabu Kojima , Kenichi Okabe
IPC分类号： H01L21/265 , H01L21/28 , H01L21/336 , H01L21/8238 , H01L29/78 , H01L29/45
CPC分类号： H01L21/26506 , H01L21/28035 , H01L21/823814 , H01L21/823842 , H01L29/6659 , H01L29/7833
摘要： A p-channel MOS transistor capable of lowering the height of a gate electrode, suppressing penetration of boron through a gate insulating film, and reducing a source/drain parasitic capacitance. A method for manufacturing a semiconductor device comprises the steps of: (a) forming a gate insulating film on each surface of active regions including an n-type active region; (b) depositing a poly-Si gate electrode layer on the gate insulating film; (c) implanting amorphousizing ions, Ge or Si, to transform an upper portion of the gate electrode layer into amorphous phase; (d) patterning the gate electrode layer to form a gate electrode; (e) forming side wall spacers on side walls of the gate electrode at a temperature not crystallizing the amorphous layer; and (f) implanting p-type impurity ions, B, into the n-type active region by using as a mask the gate electrode and the side wall spacers, to form high concentration source/drain regions.
摘要翻译：能够降低栅电极的高度的p沟道MOS晶体管，抑制硼穿过栅极绝缘膜的渗透，并降低源/漏寄生电容。一种制造半导体器件的方法包括以下步骤：（a）在包括n型有源区的有源区的每个表面上形成栅极绝缘膜; （b）在栅极绝缘膜上沉积多晶硅栅电极层; （c）注入非晶化离子Ge或Si，以将栅电极层的上部转变成非晶相; （d）图案化栅电极层以形成栅电极; （e）在不使非晶层结晶的温度下，在栅电极的侧壁上形成侧壁间隔物; 和（f）通过使用栅电极和侧壁间隔物作为掩模将p型杂质离子B注入到n型有源区中，以形成高浓度源/漏区。

12. 发明授权

US06958279B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06958279B2
公开(公告)日：2005-10-25
申请号：US10642158
申请日：2003-08-18
申请人： Manabu Kojima
发明人： Manabu Kojima
IPC分类号： H01L21/265 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092
CPC分类号： H01L29/6659 , H01L21/823814 , H01L21/823864 , H01L29/665 , H01L29/6653 , H01L29/6656
摘要： A gate insulator film and a gate electrode are formed on a semiconductor substrate, and then a layered stack of a SiO2 film and a SiN film is formed on the entire surface. Subsequently, sidewalls made of polysilicon film are formed adjacent to the gate electrode via the layered stack of the SiO2 film and the SiN film. Then, using as a mask the gate electrode, portions of the layered stack adjacent to the gate electrode, and the sidewalls, an ion dopant is implanted into a device active region to thereby form source/drains therein, and the sidewalls are then removed. At this stage, since the gate insulator film is completely covered with the layered stack, the gate insulator film is not ablated or retreated even on a device isolation insulator film.
摘要翻译：在半导体衬底上形成栅极绝缘体膜和栅电极，然后在整个表面上形成SiO 2膜和SiN膜的叠层体。随后，通过SiO 2膜和SiN膜的层叠堆叠形成由多晶硅膜制成的侧壁与栅电极相邻。然后，使用栅极电极，与栅电极相邻的层叠堆叠部分和侧壁，将离子掺杂剂注入器件有源区，从而在其中形成源极/漏极，然后除去侧壁。在这个阶段，由于栅极绝缘膜被层叠的堆叠完全覆盖，即使在器件隔离绝缘膜上，栅极绝缘膜也不会烧蚀或退火。

13. 外观设计

USD809165S1 Front combination lamp for a motor vehicle 有权
公开(公告)号：USD809165S1
公开(公告)日：2018-01-30
申请号：US29565407
申请日：2016-05-20
申请人： Satoshi Yokoi , Manabu Kojima , Taketoshi Aoki
设计人： Satoshi Yokoi , Manabu Kojima , Taketoshi Aoki

14. 外观设计

USD800034S1 Rear bumper for a motor vehicle 有权
公开(公告)号：USD800034S1
公开(公告)日：2017-10-17
申请号：US29565434
申请日：2016-05-20
申请人： Manabu Kojima , Taketoshi Aoki
设计人： Manabu Kojima , Taketoshi Aoki

15. 外观设计

USD797969S1 Front combination lamp for a motor vehicle 有权
公开(公告)号：USD797969S1
公开(公告)日：2017-09-19
申请号：US29565406
申请日：2016-05-20
申请人： Satoshi Yokoi , Manabu Kojima , Taketoshi Aoki
设计人： Satoshi Yokoi , Manabu Kojima , Taketoshi Aoki

16. 发明授权

US6081332A Monochromator 失效
标题翻译：单色器
公开(公告)号：US6081332A
公开(公告)日：2000-06-27
申请号：US217842
申请日：1998-12-22
申请人： Manabu Kojima
发明人： Manabu Kojima
IPC分类号： G01J3/06 , G01J3/18
CPC分类号： G01J3/06 , G01J3/18
摘要： A monochromator including an incident portion upon which light to be measured is made incident; a first lens for converting the incident light to be measured into parallel rays of light; a diffraction grating for receiving the light to be measured converted into the parallel rays of light and for outputting the light at an angle which differs depending on wavelength; a second lens for condensing the output light outputted from the diffraction grating at a certain angle; an output portion for outputting the output light thus condensed; and an angle changing device for making variable at least a relative angle between the diffraction grating and the second lens by one of rotation of the diffraction grating and movement of arrangement of the first and second lenses centering around the diffraction grating.
摘要翻译：包括入射部分的单色仪，使入射光被测量; 用于将待测量的入射光转换为平行光线的第一透镜; 衍射光栅，用于将待测光转换成平行光，并以与波长不同的角度输出光; 第二透镜，用于以一定角度聚焦从衍射光栅输出的输出光; 输出部分，用于输出如此冷凝的输出光; 以及角度改变装置，用于通过衍射光栅的旋转和围绕衍射光栅的第一和第二透镜的布置的移动来使衍射光栅和第二透镜之间的至少相对角度变化。

17. 发明授权

US5376823A Lateral bipolar transistor and method of producing the same 失效
标题翻译：侧面双极晶体管及其制造方法
公开(公告)号：US5376823A
公开(公告)日：1994-12-27
申请号：US127119
申请日：1993-09-27
申请人： Manabu Kojima , Naoshi Higaki
发明人： Manabu Kojima , Naoshi Higaki
IPC分类号： H01L21/331 , H01L29/73 , H01L29/72
CPC分类号： H01L29/66265 , H01L29/7317
摘要： A lateral bipolar transistor includes an insulating substrate, a single crystal semiconductor layer having a first conductivity, a mask layer which has a substantially vertical side surface and which is in contact with the single crystal semiconductor layer, and an insulating sidewall formed along the side surface of the mask layer. A base region is located under the insulating sidewall and formed in the single crystal semiconductor layer. The base region has a second conductivity opposite to the first conductivity and contains an impurity implanted by an ion implantation process. The single crystal semiconductor layer has an underlying portion on which the mask layer and the insulating sidewall are formed. An emitter region is formed in a first portion of the single crystal semiconductor layer other than the underlying portion. A collector region is formed in a second portion of the single crystal semiconductor layer other than the underlying portion.
摘要翻译：横向双极晶体管包括绝缘基板，具有第一导电性的单晶半导体层，具有基本上垂直的侧表面并与单晶半导体层接触的掩模层，以及沿着侧表面形成的绝缘侧壁的掩模层。基极区域位于绝缘侧壁下方并形成在单晶半导体层中。基极区具有与第一导电性相反的第二导电性，并且含有通过离子注入工艺注入的杂质。单晶半导体层具有其上形成有掩模层和绝缘侧壁的基底部分。发射极区域形成在除下层部分之外的单晶半导体层的第一部分中。集电极区域形成在除下层部分之外的单晶半导体层的第二部分中。

18. 外观设计

USD797968S1 Front combination lamp for a motor vehicle 有权
公开(公告)号：USD797968S1
公开(公告)日：2017-09-19
申请号：US29565397
申请日：2016-05-20
申请人： Satoshi Yokoi , Manabu Kojima , Taketoshi Aoki
设计人： Satoshi Yokoi , Manabu Kojima , Taketoshi Aoki

19. 外观设计

USD796395S1 Rear bumper for a motor vehicle 有权
公开(公告)号：USD796395S1
公开(公告)日：2017-09-05
申请号：US29565442
申请日：2016-05-20
申请人： Manabu Kojima , Taketoshi Aoki
设计人： Manabu Kojima , Taketoshi Aoki

20. 外观设计

USD794231S1 Front combination lamp for a motor vehicle 有权
公开(公告)号：USD794231S1
公开(公告)日：2017-08-08
申请号：US29565396
申请日：2016-05-20
申请人： Satoshi Yokoi , Manabu Kojima , Taketoshi Aoki
设计人： Satoshi Yokoi , Manabu Kojima , Taketoshi Aoki

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