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11. 发明授权

US08419171B2 Columnar structure film and method of forming same, piezoelectric element, liquid ejection apparatus and piezoelectric ultrasonic oscillator 有权
标题翻译：柱状结构膜及其形成方法，压电元件，液体喷射装置和压电超声波振荡器
公开(公告)号：US08419171B2
公开(公告)日：2013-04-16
申请号：US12855627
申请日：2010-08-12
申请人： Takayuki Naono , Takamichi Fujii , Takami Arakawa
发明人： Takayuki Naono , Takamichi Fujii , Takami Arakawa
IPC分类号： B41J2/045 , H01L41/04
CPC分类号： B41J2/14274 , H01L41/0805 , H01L41/0973 , H01L41/1876 , H01L41/316
摘要： The columnar structure film is formed on a surface of a substrate by vapor phase epitaxy, and is constituted of a plurality of columnar bodies extending in directions non-parallel to the surface of the substrate. In the columnar structure film, a relationship GSmax>2.0 GSmin is satisfied, where GSmax and GSmin are respectively a maximum value and a minimum value of average diameters of the columnar bodies taken in planes perpendicular to a thickness direction of the columnar structure film.
摘要翻译：柱状结构膜通过气相外延形成在基板的表面上，并且由在与基板的表面不平行的方向延伸的多个柱状体构成。在柱状结构膜中，满足关系GSmax> 2.0GSmin，其中GSmax和GSmin分别是垂直于柱状结构膜的厚度方向的平面中所取的柱状体的平均直径的最大值和最小值。

12. 发明申请

US20120193225A1 FILM FORMATION METHOD, FILM FORMATION DEVICE, PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE, LIQUID DISCHARGE DEVICE AND PIEZOELECTRIC ULTRASONIC TRANSDUCER 有权
标题翻译：膜形成方法，膜形成装置，压电膜，压电装置，液体放电装置和压电超声波传感器
公开(公告)号：US20120193225A1
公开(公告)日：2012-08-02
申请号：US13443042
申请日：2012-04-10
申请人： Takamichi FUJII , Takayuki Naono , Takami Arakawa
发明人： Takamichi FUJII , Takayuki Naono , Takami Arakawa
IPC分类号： C23C14/34
CPC分类号： B41J2/155 , B41J2/14233 , C23C14/0036 , C23C14/088 , C23C14/3407 , C23C14/3471 , H01J37/32935 , H01J37/3299 , H01J37/34 , H01J37/3444 , H01L41/0477 , H01L41/0478 , H01L41/0973 , H01L41/316 , Y10T29/42 , Y10T428/31504
摘要： When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.
摘要翻译：当通过使用等离子体的等离子体通过使基板和目标物彼此面对而在基板上形成含有靶的构成元素的膜时，从外周侧横向延伸的至少10mm的空间范围的电位被控制为等于衬底上的电位，并且/或者衬底被具有被控制为等于衬底上的电位的电位的壁表面包围。

13. 发明申请

US20110041304A1 PIEZOELECTRIC DEVICE, LIQUID DROPLET EJECTING HEAD USING THE SAME, AND PROCESS FOR PRODUCING THE SAME 审中-公开
标题翻译：压电装置，使用其的液滴喷射头及其制造方法
公开(公告)号：US20110041304A1
公开(公告)日：2011-02-24
申请号：US12938695
申请日：2010-11-03
申请人： Takayuki NAONO , Takami Arakawa , Takamichi Fujii
发明人： Takayuki NAONO , Takami Arakawa , Takamichi Fujii
IPC分类号： H01L41/22
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1646 , H01L41/0805 , H01L41/0973 , H01L41/1876 , H01L41/316 , Y10T29/42
摘要： The piezoelectric device includes a piezoelectric film that expands or contracts according to variations in voltage applied, a first electrode provided on a first side of the film, and a second electrode provided on a second side of the film. The film is formed on the second electrode by a vapor phase deposition and mainly composed of PbxByOz. An element at site B is at least one element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and 0
摘要翻译：压电装置包括根据施加的电压的变化而膨胀或收缩的压电膜，设置在膜的第一面上的第一电极和设置在膜的第二面上的第二电极。该膜通过气相沉积形成在第二电极上，主要由Pb x B y O z组成。位置B处的元素是选自Ti，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Sc，Co，Cu，In，Sn，Ga，Zn，Cd中的至少一种元素， Fe和Ni，0

14. 发明申请

US20110037812A1 Columnar Structure Film and Method of Forming Same, Piezoelectric Element, Liquid Ejection Apparatus and Piezoelectric Ultrasonic Oscillator 有权
标题翻译：柱状结构膜及其形成方法，压电元件，液体喷射装置和压电超声波振荡器
公开(公告)号：US20110037812A1
公开(公告)日：2011-02-17
申请号：US12855627
申请日：2010-08-12
申请人： Takayuki Naono , Takamichi Fujii , Takami Arakawa
发明人： Takayuki Naono , Takamichi Fujii , Takami Arakawa
IPC分类号： B41J2/045 , H01L41/04
CPC分类号： B41J2/14274 , H01L41/0805 , H01L41/0973 , H01L41/1876 , H01L41/316
摘要： The columnar structure film is formed on a surface of a substrate by vapor phase epitaxy, and is constituted of a plurality of columnar bodies extending in directions non-parallel to the surface of the substrate. In the columnar structure film, a relationship GSmax>2.0 GSmin is satisfied, where GSmax and GSmin are respectively a maximum value and a minimum value of average diameters of the columnar bodies taken in planes perpendicular to a thickness direction of the columnar structure film.
摘要翻译：柱状结构膜通过气相外延形成在基板的表面上，并且由在与基板的表面不平行的方向延伸的多个柱状体构成。在柱状结构膜中，满足关系GSmax> 2.0GSmin，其中GSmax和GSmin分别是垂直于柱状结构膜的厚度方向的平面中所取的柱状体的平均直径的最大值和最小值。

15. 发明申请

US20100194824A1 PIEZOELECTRIC MATERIAL, METHOD FOR PRODUCING PIEZOELECTRIC MATERIAL, PIEZOELECTRIC DEVICE AND LIQUID DISCHARGE DEVICE 有权
标题翻译：压电材料，压电材料的生产方法，压电装置和液体放电装置
公开(公告)号：US20100194824A1
公开(公告)日：2010-08-05
申请号：US12698792
申请日：2010-02-02
申请人： Takami Arakawa , Yuichi Okamoto , Yoshikazu Hishinuma
发明人： Takami Arakawa , Yuichi Okamoto , Yoshikazu Hishinuma
IPC分类号： B41J2/045 , H01L41/18 , B32B9/00 , B32B9/04
CPC分类号： H01L41/316 , C04B35/493 , C04B2235/3239 , C04B2235/3251 , C04B2235/3294 , C04B2235/768 , C04B2235/79 , C04B2235/81 , C23C14/08 , C23C14/088 , C23C14/3414 , H01L27/20 , H01L41/0477 , H01L41/0973 , H01L41/1876
摘要： A piezoelectric material of the invention includes a perovskite oxide (P) (which may contain inevitable impurities) represented by the formula below: Pba(Zrx,Tiy,Mb-x-y)bOc (P) (wherein M represents one or two or more metal elements; wherein 0
摘要翻译：本发明的压电材料包括由下式表示的钙钛矿氧化物（P）（其可含有不可避免的杂质）：Pba（Zrx，Tiy，Mb-xy）bOc（P）（其中M表示一种或两种以上金属元素;其中0

16. 发明授权

US08354777B2 Piezoelectric film and piezoelectric device including the same, and liquid discharge apparatus 有权
标题翻译：压电膜和包括该压电膜的压电装置和液体排出装置
公开(公告)号：US08354777B2
公开(公告)日：2013-01-15
申请号：US12566298
申请日：2009-09-24
申请人： Takami Arakawa , Yoshikazu Hishinuma
发明人： Takami Arakawa , Yoshikazu Hishinuma
IPC分类号： H01L41/087
CPC分类号： B41J2/161 , B41J2/155 , B41J2/1646 , B41J2202/03 , H01L41/0805 , H01L41/1876 , H01L41/316
摘要： A piezoelectric film of a perovskite oxide represented by a general expression (P) below and has a pyrochlore free single phase perovskite structure with a/b≦1.06. Pba(Zrx,Tiy,Mb-x-y)bOc (P) (where, M represents one or more types of metal elements, 0
摘要翻译：由以下通式（P）表示的钙钛矿氧化物的压电膜，具有不含绿烧石的单相钙钛矿结构，具有a / b＆nlE; 1.06。 Pba（Zrx，Tiy，Mb-xy）bOc（P）（其中，M表示一种或多种类型的金属元素，0

17. 发明授权

US08215753B2 Piezoelectric material, method for producing piezoelectric material, piezoelectric device and liquid discharge device 有权
标题翻译：压电材料，压电材料制造方法，压电装置和液体排出装置
公开(公告)号：US08215753B2
公开(公告)日：2012-07-10
申请号：US12698792
申请日：2010-02-02
申请人： Takami Arakawa , Yuichi Okamoto , Yoshikazu Hishinuma
发明人： Takami Arakawa , Yuichi Okamoto , Yoshikazu Hishinuma
IPC分类号： B41J2/045 , H01L41/18 , B32B27/32 , B32B9/00 , B32B9/04
CPC分类号： H01L41/316 , C04B35/493 , C04B2235/3239 , C04B2235/3251 , C04B2235/3294 , C04B2235/768 , C04B2235/79 , C04B2235/81 , C23C14/08 , C23C14/088 , C23C14/3414 , H01L27/20 , H01L41/0477 , H01L41/0973 , H01L41/1876
摘要： A piezoelectric material of the invention includes a perovskite oxide (P) (which may contain inevitable impurities) represented by the formula below: Pba(Zrx,Tiy,Mb-x-y)bOc (P) (wherein M represents one or two or more metal elements; wherein 0
摘要翻译：本发明的压电材料包括由下式表示的钙钛矿氧化物（P）（其可含有不可避免的杂质）：Pba（Zrx，Tiy，Mb-xy）bOc（P）（其中M表示一种或两种以上金属元素;其中0

18. 发明授权

US08390178B2 Piezoelectric film and piezoelectric device 有权
标题翻译：压电薄膜和压电元件
公开(公告)号：US08390178B2
公开(公告)日：2013-03-05
申请号：US13168011
申请日：2011-06-24
申请人： Takayuki Naono , Takami Arakawa
发明人： Takayuki Naono , Takami Arakawa
IPC分类号： H01L41/08
CPC分类号： H01L41/0805 , H01L41/0973 , H01L41/1876 , H01L41/316
摘要： A piezoelectric film includes crystals of a complex oxide having a perovskite structure with (100)-preferred orientation and represented as: Pb1+δ[(ZrxTi1-x)1-yNby]Oz, where x is a value in a range of 0
摘要翻译：压电膜包括具有（100） - 优选取向的钙钛矿结构的复合氧化物晶体，并表示为：Pb1 +δ[（ZrxTi1-x）1-yNby] Oz，其中x为0 < x <1，y是0.13≤n1E; y＆nlE; 0.25的范围内的值，δ和z是在得到钙钛矿结构且δ= 0且z = 3为标准的范围内的值，其中衍射通过X射线衍射测定的来自钙钛矿（100）面的峰强度I（100）和来自钙钛矿（200）面的衍射峰强度I（200）满足I（100）/ I（200）≥1.25。

19. 发明申请

US20110014394A1 FILM DEPOSITING APPARATUS AND METHOD 审中-公开
标题翻译：薄膜沉积装置和方法
公开(公告)号：US20110014394A1
公开(公告)日：2011-01-20
申请号：US12667429
申请日：2009-07-29
申请人： Takamichi Fujii , Takami Arakawa , Yasukazu Nihei
发明人： Takamichi Fujii , Takami Arakawa , Yasukazu Nihei
IPC分类号： C23C16/50 , C23C16/00
CPC分类号： C23C14/3414 , C23C14/088 , H01J37/3426 , H01J37/3435 , H01L21/67103
摘要： A film depositing apparatus comprises: a vacuum vessel; an evacuating unit for evacuating the interior of the vacuum vessel; a gas supply source for supplying the vacuum vessel with gases necessary for film deposition; a backing plate that is placed within the vacuum vessel for holding a target formed by sintering; a substrate holder for holding a deposition substrate within the vacuum vessel in a face-to-face relation with the backing plate; and a power supply unit for supplying electric power between the backing plate and the substrate holder to generate a plasma within the vacuum vessel, wherein the backing plate has a smaller thermal expansion coefficient than that of the target which has a sinter density of at least 95%, the sinter density representing the ratio of the actual weight of a sintered form of the target to its theoretical weight.
摘要翻译：一种成膜设备包括：真空容器; 用于排空真空容器内部的排气单元; 用于向真空容器供应用于膜沉积所需的气体的气体供应源; 放置在真空容器内用于保持通过烧结形成的靶的背板; 衬底保持器，用于以与衬板的面对面关系将沉积衬底保持在真空容器内; 以及电源单元，用于在所述背板和所述衬底保持器之间提供电力以在所述真空容器内产生等离子体，其中所述背板的热膨胀系数小于所述靶的烧结密度为至少95的热膨胀系数％，烧结密度代表目标烧结形式的实际重量与其理论重量之比。

20. 发明授权

US08100513B2 Ferroelectric film, process for producing the same, ferroelectric device, and liquid discharge device 有权
标题翻译：铁电体膜，其制造方法，铁电体装置和液体排出装置
公开(公告)号：US08100513B2
公开(公告)日：2012-01-24
申请号：US12052547
申请日：2008-03-20
申请人： Takami Arakawa , Takamichi Fujii
发明人： Takami Arakawa , Takamichi Fujii
IPC分类号： B41J2/045 , H01L41/00 , C23C14/00
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1646 , B41J2202/03 , B41J2202/21 , C04B35/493 , C04B2235/3251 , C04B2235/767 , C23C14/088 , C23C14/34 , H01L41/0805 , H01L41/1876 , H01L41/316
摘要： A ferroelectric film having a columnar structure constituted by a plurality of columnar grains, and containing as a main component a perovskite oxide which has a composition expressed by a compositional formula A1+δ[(ZrxTi1−x)1−yMy]Oz, where A represents one or more A-site elements including lead (Pb) as a main component, M represents one or more of vanadium (V), niobium (Nb), tantalum (Ta), and antimony (Sb) as one or more B-site elements, zirconium (Zr) and titanium (Ti) are also B-site elements, 0
摘要翻译：具有由多个柱状晶体构成的柱状结构体的铁电体膜，以组成式A1 +δ[（Zr x Ti1-x）1-yMy] Oz表示的成分为主要成分的钙钛矿型氧化物，其中A 表示作为主要成分的一种以上的A位元素，M表示作为一种以上的B系的钒（V），铌（Nb），钽（Ta）和锑（Sb）中的一种或多种，现场元素锆（Zr）和钛（Ti）也是B位元素，0

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