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    • 11. 发明授权
    • Dual wall turbine blade ultrasonic wall thickness measurement technique
    • 双壁涡轮叶片超声波壁厚测量技术
    • US07272529B2
    • 2007-09-18
    • US11178020
    • 2005-07-08
    • Robert J. HoganJames A. HallSurendra Singh
    • Robert J. HoganJames A. HallSurendra Singh
    • G01B5/02
    • F01D21/003G01B17/02
    • A method and apparatus is provided to analyze a dual wall structure having at least one hollow core therein and having the same unknown material sound velocities in walls and in post as well. A transducer is located in at least two different positions with respect to the structure, whereby the transducer propagates an ultrasonic wave toward the dual wall structure. A portion of the ultrasonic wave is reflected back to the transducer. One wave traverses a portion of the dual wall structure that has a core filled with a medium having a known material acoustic property. A second wave traverses a portion of the post that has an unknown material sound velocity. From time of flight measurements of the above mentioned waves, the wall thickness and core shift, if any, can be determined.
    • 提供了一种方法和装置来分析其中具有至少一个中空芯的双壁结构,并且在壁和柱中也具有相同的未知材料声速。 传感器相对于结构位于至少两个不同的位置,由此换能器将超声波传播到双壁结构。 超声波的一部分被反射回换能器。 一个波浪穿过具有填充有具有已知材料声学特性的介质的芯的双壁结构的一部分。 第二波穿过具有未知材料声速的柱的一部分。 从上述波的飞行时间测量,可以确定壁厚和芯移动(如果有的话)。
    • 12. 发明授权
    • Method for detecting deviation in crystallographic orientation in a metal structure
    • 用于检测金属结构中晶体取向偏差的方法
    • US07946177B2
    • 2011-05-24
    • US12276969
    • 2008-11-24
    • Harry Lester KingtonSurendra SinghMark C. Morris
    • Harry Lester KingtonSurendra SinghMark C. Morris
    • G01H5/00
    • G01H5/00
    • A method of detecting a deviation angle in a single-crystal metal structure is disclosed. The single-crystal metal structure has a crystallographic orientation, a length, a first side, a second side, and a first axis extending through the structure. The method comprises determining the length of the single-crystal metal structure along the first axis, transmitting a signal through the single-crystal metal structure from the first side, the signal oriented to propagate along the first axis, receiving the signal, determining a time-of-flight for the signal to traverse the length from the first side to the second side, determining a speed of the signal based on the time-of-flight and the length, and comparing the speed of the signal to a reference speed to detect the deviation angle.
    • 公开了一种在单晶金属结构中检测偏斜角的方法。 单晶金属结构具有晶体取向,长度,第一侧,第二侧和延伸穿过该结构的第一轴。 该方法包括:沿着第一轴确定单晶金属结构的长度,从第一侧传输通过单晶金属结构的信号,所述信号被定向为沿着第一轴传播,接收信号,确定时间 用于使信号从第一侧到第二侧的长度穿过,基于飞行时间和长度确定信号的速度,并将信号的速度与参考速度比较为 检测偏角。
    • 19. 发明授权
    • Active gate CCD image sensor
    • 有源门CCD图像传感器
    • US07235824B1
    • 2007-06-26
    • US09877050
    • 2001-06-11
    • Surendra Singh
    • Surendra Singh
    • H01L27/148
    • H01L27/14812H01L31/035281
    • An active gate includes a substrate of a first conductivity type, a channel of a second conductivity type formed in the substrate, a first gate region of the first conductivity type formed in a corresponding first portion of the channel, and a first contact connected to the first gate region. The first gate region covers a first area, and the first contact covers a fraction of the first area. A pixel or register element includes an active gate, a second gate region of the first conductivity type formed in a corresponding second portion of the channel, and a second contact connected to the second gate region. The second gate region covers a second area and is spaced by a first gap from the first gate region. The second contact covers a fraction of the second area. The pixel or register element further includes a first gate electrode insulatively spaced from and disposed over the first gap.
    • 有源栅极包括第一导电类型的衬底,形成在衬底中的第二导电类型的沟道,形成在沟道的对应的第一部分中的第一导电类型的第一栅极区域,以及连接到 第一门区。 第一栅极区域覆盖第一区域,并且第一触点覆盖第一区域的一部分。 像素或寄存器元件包括有源栅极,形成在沟道的相应第二部分中的第一导电类型的第二栅极区域和连接到第二栅极区域的第二触点。 第二栅极区域覆盖第二区域并且与第一栅极区域间隔开第一间隙。 第二个接触覆盖了第二个区域的一部分。 像素或寄存器元件还包括与第一间隙绝缘间隔开并布置在其上的第一栅电极。