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11. 发明申请

US20100140608A1 Transistor and method of manufacturing the same 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US20100140608A1
公开(公告)日：2010-06-10
申请号：US12458251
申请日：2009-07-07
申请人： Sung-ho Park , Chang-jung Kim , I-hun Song , Sang-wook Kim , Jae-chul Park
发明人： Sung-ho Park , Chang-jung Kim , I-hun Song , Sang-wook Kim , Jae-chul Park
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/785 , H01L21/8221 , H01L27/0688 , H01L29/66795 , H01L29/7869
摘要： Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other.
摘要翻译：示例性实施例提供晶体管及其制造方法。晶体管可以包括由氧化物半导体形成的沟道层和具有三维结构的栅极。多个晶体管可以沿垂直于衬底的方向堆叠。多个晶体管中的至少一些可以彼此连接。

12. 发明授权

US08373237B2 Transistor and method of manufacturing the same 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US08373237B2
公开(公告)日：2013-02-12
申请号：US12458251
申请日：2009-07-07
申请人： Sung-ho Park , Chang-jung Kim , I-hun Song , Sang-wook Kim , Jae-chul Park
发明人： Sung-ho Park , Chang-jung Kim , I-hun Song , Sang-wook Kim , Jae-chul Park
IPC分类号： H01L27/088
CPC分类号： H01L29/785 , H01L21/8221 , H01L27/0688 , H01L29/66795 , H01L29/7869
摘要： Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other.
摘要翻译：示例性实施例提供晶体管及其制造方法。晶体管可以包括由氧化物半导体形成的沟道层和具有三维结构的栅极。多个晶体管可以沿垂直于衬底的方向堆叠。多个晶体管中的至少一些可以彼此连接。

13. 发明申请

US20090057663A1 Oxide thin film transistor and method of manufacturing the same 有权
标题翻译：氧化物薄膜晶体管及其制造方法
公开(公告)号：US20090057663A1
公开(公告)日：2009-03-05
申请号：US12076486
申请日：2008-03-19
申请人： Sun-il Kim , Jae-cheol Lee , I-hun Song , Young-soo Park , Chang-jung Kim , Jae-chul Park
发明人： Sun-il Kim , Jae-cheol Lee , I-hun Song , Young-soo Park , Chang-jung Kim , Jae-chul Park
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02581 , H01L29/78696
摘要： An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.
摘要翻译：提供氧化物薄膜晶体管和制造氧化物TFT的方法。所述氧化物薄膜晶体管（TFT）包括：栅极; 形成为对应于所述栅极的沟道，以及具有比所述沟道更高功函数的覆盖层; 设置在栅极和沟道之间的栅极绝缘体; 以及源极和漏极，分别接触封盖层的两侧和通道之间，部分地接合覆盖层的顶表面。

14. 发明授权

US08470634B2 Method of manufacturing oxide thin film transistor 有权
标题翻译：制造氧化物薄膜晶体管的方法
公开(公告)号：US08470634B2
公开(公告)日：2013-06-25
申请号：US13552185
申请日：2012-07-18
申请人： Sun-il Kim , Jae-cheol Lee , I-hun Song , Young-soo Park , Chang-jung Kim , Jae-chul Park
发明人： Sun-il Kim , Jae-cheol Lee , I-hun Song , Young-soo Park , Chang-jung Kim , Jae-chul Park
IPC分类号： H01L21/00 , H01L21/16 , H01L21/84 , H01L21/302
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02581 , H01L29/78696
摘要： An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.
摘要翻译：提供氧化物薄膜晶体管和制造氧化物TFT的方法。所述氧化物薄膜晶体管（TFT）包括：栅极; 形成为对应于所述栅极的沟道，以及具有比所述沟道更高功函数的覆盖层; 设置在栅极和沟道之间的栅极绝缘体; 以及源极和漏极，分别接触封盖层的两侧和通道之间，部分地接合覆盖层的顶表面。

15. 发明授权

US08324628B2 Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same 有权
标题翻译：用于薄膜晶体管的沟道层，包括该薄膜晶体管的薄膜晶体管及其制造方法
公开(公告)号：US08324628B2
公开(公告)日：2012-12-04
申请号：US12073102
申请日：2008-02-29
申请人： Sun-il Kim , I-hun Song , Young-soo Park , Dong-hun Kang , Chang-jung Kim , Jae-chul Park
发明人： Sun-il Kim , I-hun Song , Young-soo Park , Dong-hun Kang , Chang-jung Kim , Jae-chul Park
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L29/7869
摘要： Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer.
摘要翻译：提供了一种用于薄膜晶体管的沟道层，薄膜晶体管及其形成方法。用于薄膜晶体管的沟道层可以包括掺杂有过渡金属的IZO（氧化铟锌）。薄膜晶体管可以包括栅电极和形成在衬底上的沟道层，形成在栅极和沟道层之间的栅极绝缘层，以及与沟道层的端部接触的源电极和漏电极。

16. 发明申请

US20110141060A1 Optical touch panels and methods of driving the same 有权
标题翻译：光触摸面板及其驱动方法
公开(公告)号：US20110141060A1
公开(公告)日：2011-06-16
申请号：US12805722
申请日：2010-08-17
申请人： Sun-il Kim , Chang-jung Kim , Sang-hun Jeon , I-hun Song , Jae-chul Park
发明人： Sun-il Kim , Chang-jung Kim , Sang-hun Jeon , I-hun Song , Jae-chul Park
IPC分类号： G06F3/042
CPC分类号： G06F3/0412 , G06F3/0386
摘要： An optical touch panel may include a plurality of light-sensing areas. The plurality of light-sensing areas may be integrally formed with pixels in a display panel or may be formed on the display panel, in order to sense incident light from outside the optical touch panel. A method of driving an optical touch panel may include sensing a change in an output from a plurality of light-sensing areas between two time points and determining that there is an optical input when the change in the output is greater than or equal to a first reference value that is defined in advance. The light-sensing areas may be integrally formed with pixels in a display panel or formed on a surface of the display panel, for sensing incident light from outside the optical touch panel.
摘要翻译：光学触摸面板可以包括多个感光区域。多个感光区域可以与显示面板中的像素一体地形成，或者可以形成在显示面板上，以便感测来自光学触摸面板外部的入射光。驱动光学触摸面板的方法可以包括在两个时间点之间感测多个光感测区域的输出的变化，并且当输出的变化大于或等于第一时间点时确定存在光学输入提前定义的参考值。光感测区域可以与显示面板中的像素一体地形成或形成在显示面板的表面上，用于感测来自光学触摸面板外部的入射光。

17. 发明申请

US20100096628A1 Multi-layered memory apparatus including oxide thin film transistor 审中-公开
标题翻译：包括氧化物薄膜晶体管的多层存储装置
公开(公告)号：US20100096628A1
公开(公告)日：2010-04-22
申请号：US12585932
申请日：2009-09-29
申请人： I-hun Song , Jae-chul Park , Kee-won Kwon , Sun-il Kim
发明人： I-hun Song , Jae-chul Park , Kee-won Kwon , Sun-il Kim
IPC分类号： H01L29/786 , H01L29/12
CPC分类号： G11C13/00 , G11C5/02 , G11C13/0023 , G11C2213/71 , G11C2213/77 , H01L27/0688 , H01L27/1021 , H01L27/1052 , H01L27/1225 , H01L29/7869
摘要： Provided is a multi-layered memory apparatus including an oxide thin film transistor. The multi-layered memory apparatus includes an active circuit unit and a memory unit formed on the active circuit unit. A row line and a column line are formed on memory layers. A selection transistor is formed at a side end of the row line and the column line.
摘要翻译：提供了一种包括氧化物薄膜晶体管的多层存储装置。多层存储装置包括有源电路单元和形成在有源电路单元上的存储单元。在存储层上形成行线和列线。选择晶体管形成在行线和列线的侧端。

18. 发明申请

US20080237687A1 Flash memory device 审中-公开
标题翻译：闪存设备
公开(公告)号：US20080237687A1
公开(公告)日：2008-10-02
申请号：US11898037
申请日：2007-09-07
申请人： Sun-il Kim , Young-gu Jin , I-hun Song , Young-soo Park , Dong-hun Kang , Chang-jung Kim , Jae-chul Park
发明人： Sun-il Kim , Young-gu Jin , I-hun Song , Young-soo Park , Dong-hun Kang , Chang-jung Kim , Jae-chul Park
IPC分类号： H01L29/788
CPC分类号： B82Y10/00 , H01L27/11521 , H01L27/11568 , H01L29/40114 , H01L29/40117 , H01L29/42324 , H01L29/4234 , H01L29/7881 , H01L29/792
摘要： Provided is a flash memory device including a gate structure on a substrate. The flash memory device includes a charge supply layer including a ZnO based material formed between a substrate and a gate structure or formed on the gate structure. Accordingly, the flash memory device can be formed to be of a bottom gate type or of a top gate type by including the charge supply layer. Also, the flash memory device may be realized to be any of a charge trap type and a floating gate type.
摘要翻译：提供了一种在基板上包括栅极结构的闪存器件。闪存器件包括电荷供应层，其包括形成在衬底和栅极结构之间或形成在栅极结构上的基于ZnO的材料。因此，闪存器件可以通过包括电荷供给层而形成为底栅型或顶栅型。此外，闪存器件可以被实现为电荷陷阱型和浮动栅型中的任一种。

19. 发明授权

US08917260B2 Optical touch panels and methods of driving the same 有权
标题翻译：光触摸面板及其驱动方法
公开(公告)号：US08917260B2
公开(公告)日：2014-12-23
申请号：US12805722
申请日：2010-08-17
申请人： Sun-il Kim , Chang-jung Kim , Sang-hun Jeon , I-hun Song , Jae-chul Park
发明人： Sun-il Kim , Chang-jung Kim , Sang-hun Jeon , I-hun Song , Jae-chul Park
IPC分类号： G06F3/042 , G06F3/041 , G06F3/038
CPC分类号： G06F3/0412 , G06F3/0386
摘要： An optical touch panel may include a plurality of light-sensing areas. The plurality of light-sensing areas may be integrally formed with pixels in a display panel or may be formed on the display panel, in order to sense incident light from outside the optical touch panel. A method of driving an optical touch panel may include sensing a change in an output from a plurality of light-sensing areas between two time points and determining that there is an optical input when the change in the output is greater than or equal to a first reference value that is defined in advance. The light-sensing areas may be integrally formed with pixels in a display panel or formed on a surface of the display panel, for sensing incident light from outside the optical touch panel.
摘要翻译：光学触摸面板可以包括多个感光区域。多个感光区域可以与显示面板中的像素一体地形成，或者可以形成在显示面板上，以便感测来自光学触摸面板外部的入射光。驱动光学触摸面板的方法可以包括：在两个时间点之间感测来自多个光感测区域的输出的变化，并且当输出的变化大于或等于第一时间点时，确定存在光学输入提前定义的参考值。光感测区域可以与显示面板中的像素一体地形成或形成在显示面板的表面上，用于感测来自光学触摸面板外部的入射光。

20. 发明授权

US08253134B2 Oxide thin film transistor 有权
标题翻译：氧化物薄膜晶体管
公开(公告)号：US08253134B2
公开(公告)日：2012-08-28
申请号：US12076486
申请日：2008-03-19
申请人： Sun-il Kim , Jae-cheol Lee , I-hun Song , Young-soo Park , Chang-jung Kim , Jae-chul Park
发明人： Sun-il Kim , Jae-cheol Lee , I-hun Song , Young-soo Park , Chang-jung Kim , Jae-chul Park
IPC分类号： H01L29/12 , H01L29/04 , H01L31/036
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02581 , H01L29/78696
摘要： An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.
摘要翻译：提供氧化物薄膜晶体管和制造氧化物TFT的方法。所述氧化物薄膜晶体管（TFT）包括：栅极; 形成为对应于所述栅极的沟道，以及具有比所述沟道更高功函数的覆盖层; 设置在栅极和沟道之间的栅极绝缘体; 以及源极和漏极，分别接触封盖层的两侧和通道之间，部分地接合覆盖层的顶表面。

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