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11. 发明授权

US10385414B2 Non-oriented silicon steel and its manufacturing method 有权
公开(公告)号：US10385414B2
公开(公告)日：2019-08-20
申请号：US14371013
申请日：2012-03-29
申请人： Liang Zou , Bo Wang , Xiandong Liu , Aihua Ma , Shishu Xie , Hongxu Hei
发明人： Liang Zou , Bo Wang , Xiandong Liu , Aihua Ma , Shishu Xie , Hongxu Hei
IPC分类号： C21D8/12 , C22C38/04 , C22C38/06 , C22C38/00 , C22C38/02 , C21C7/00 , C21C7/064 , H01F1/16 , C22C38/12 , C22C38/14 , H01F1/147
摘要： An unoriented silicon steel having high magnetic conductivity and low iron loss at a working magnetic density of 1.0-1.5 T and method for manufacturing same. By proper deoxidation control in a RH refining and high-temperature treatment for a short time in a normalizing step, the method can reduce the amount of inclusions in the silicon steel and improve grain shape, so as to improve the magnetic conductivity and iron loss of the unoriented silicon steel at a magnetic density of 1.0-1.5 T.

12. 发明授权

US09944955B1 Photosynthetic production of 3-hydroxybutyrate from carbon dioxide 有权
公开(公告)号：US09944955B1
公开(公告)日：2018-04-17
申请号：US14479893
申请日：2014-09-08
申请人： Bo Wang , Weiwen Zhang , Deirdre Meldrum , David Nielsen
发明人： Bo Wang , Weiwen Zhang , Deirdre Meldrum , David Nielsen
IPC分类号： C12P7/52 , C12N9/04 , C12N9/10 , C12N9/16 , C07C59/01
CPC分类号： C12P7/52 , C07C59/01 , C12N9/0006 , C12N9/1029 , C12N9/16 , C12Y101/01036 , C12Y101/01157 , C12Y203/01009 , C12Y301/0202
摘要： Construction and expression of synthetic pathways to produce (5) or (R)-3-hydroxybutyrate (3HB) as enantiomerically-pure products by genetically engineering cyanobacterium Synechocystis sp. PCC 6803. Under optimized growth conditions, the pathway employing phaA and phaB from R. eutropha was the most effective, producing up to 533.4±5.5 mg/l (R)-3HB after 21 days photosynthetic cultivation. For the first time, the feasibility and high efficiency of producing 3HB using solar energy and CO2 as sole energy and carbon sources by engineered cyanobacteria is demonstrated.

13. 发明授权

US09816152B2 Manufacture method of high-efficiency non-oriented silicon steel with excellent magnetic performance 有权
公开(公告)号：US09816152B2
公开(公告)日：2017-11-14
申请号：US13637611
申请日：2011-04-27
申请人： Aihua Ma , Bo Wang , Shishu Xie , Zhanyuan Hu , Liang Zou , Zitao Wang , Yuhua Zhu , Jie Huang , Bingzhong Jin , Xiandong Liu
发明人： Aihua Ma , Bo Wang , Shishu Xie , Zhanyuan Hu , Liang Zou , Zitao Wang , Yuhua Zhu , Jie Huang , Bingzhong Jin , Xiandong Liu
IPC分类号： C21D8/00 , C22C38/60 , C22C38/00 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/14 , C21D8/12 , H01F1/16
CPC分类号： C21D8/005 , C21D8/1261 , C21D8/1272 , C22C38/001 , C22C38/002 , C22C38/004 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/14 , C22C38/60 , H01F1/16
摘要： A manufacture method of high-efficiency non-oriented silicon steel with excellent magnetic property includes the steps of smelting a chemical composition of non-oriented silicon steel, by weight percent, is: C≦0.0040%, Si:0.1˜0.8%, Al:0.002˜1.0%, Mn:0.10˜1.50%, P:≦0.2%, Sb:0.04˜0.08%, S≦0.0030%, N≦0.0020%, Ti≦0.0020%, and the rest is Fe and unavoidable inclusions. The molten steel is then cast into billets which are hot-rolled into a hot-rolled product. The heating temperature for the billet is 1100°˜1150° and the finish-rolling temperature is 860°˜920°. The hot-rolled product is then air cooled for a period of time within a range determined by air cooling time t: (2+30xSb %)s≦t≦7 s. The hot-rolled product is reeled at a temperature ≧720° and cold-rolled to form cold-rolled plate with a target thickness at a reduction ratio of 70˜78% followed by heating up the cold-rolled plate to 800˜1000° at heating rate of ≧15°/s, and holding time of 10 s˜25 s.

14. 发明申请

US20170068703A1 LOCAL DATABASE CACHE 审中-公开
标题翻译：本地数据库缓存
公开(公告)号：US20170068703A1
公开(公告)日：2017-03-09
申请号：US15307935
申请日：2014-08-07
申请人： Jing-Hao JU , Bo WANG , Bin WU , HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： Jing-Hao Ju , Bo Wang , Bin Wu
IPC分类号： G06F17/30 , G06F12/0893
CPC分类号： G06F16/24542 , G06F12/0893 , G06F16/24539 , G06F16/24552 , G06F16/248 , G06F2212/1021 , G06F2212/1024 , G06F2212/465
摘要： A stored procedure call may be transmitted to a database to execute a database query. As a result of the stored procedure call, results including a result record satisfying the database query and a set of records related to the result record may be received. The results may be stored in a local cache.
摘要翻译：可以将存储过程调用发送到数据库以执行数据库查询。作为存储过程调用的结果，可以接收包括满足数据库查询的结果记录和与结果记录相关的一组记录的结果。结果可能存储在本地缓存中。

15. 发明授权

US09085989B2 Airfoils including compliant tip 有权
标题翻译：翼型包括合适的尖端
公开(公告)号：US09085989B2
公开(公告)日：2015-07-21
申请号：US13336001
申请日：2011-12-23
申请人： Pranav Dhoj Shah , Scott Roger Finn , Nicholas Joseph Kray , Ian Francis Prentice , Dong-Jin Shim , Bo Wang
发明人： Pranav Dhoj Shah , Scott Roger Finn , Nicholas Joseph Kray , Ian Francis Prentice , Dong-Jin Shim , Bo Wang
IPC分类号： F01D5/20 , F01D21/04
CPC分类号： F01D5/20 , F01D21/045 , F05D2300/43 , F05D2300/431 , F05D2300/432 , Y02T50/672 , Y02T50/673
摘要： An airfoil, a fan assembly and an engine include at least one airfoil including a root portion, a body portion and a tip portion. The body portion is configured extending radially outward from the root portion and the tip portion is configured extending radially outward from the root portion and the body portion. The airfoil including a suction and a pressure side coupled together at a leading and a trailing edge and extending therebetween. The airfoil including a compliant tip at the tip portion. The compliant tip extending along at least a portion of the tip portion in a chord-wise direction and a span-wise direction. The compliant tip is configured to provide wave propagation along the tip portion such that critical strain proximate the tip portion and the trailing edge is reduced during a foreign object impact.
摘要翻译：翼型件，风扇组件和发动机包括至少一个包括根部，主体部分和顶端部分的翼型件。主体部分被配置为从根部径向向外延伸，并且尖端部分被构造成从根部部分和主体部分径向向外延伸。所述翼型件包括在前缘和后缘处连接在一起并在其间延伸的吸力和压力侧。所述翼型件在尖端部分包括柔性尖端。柔性尖端沿着顶端部分的至少一部分沿着弦向和跨度方向延伸。柔性尖端构造成沿着尖端部分提供波传播，使得在异物冲击期间，靠近尖端部分和后缘的临界应变减小。

16. 发明申请

US20150000794A1 Non-Oriented Silicon Steel and Its Manufacturing Method 审中-公开
标题翻译：非定向硅钢及其制造方法
公开(公告)号：US20150000794A1
公开(公告)日：2015-01-01
申请号：US14371013
申请日：2012-03-29
申请人： Liang Zou , Bo Wang , Xiandong Liu , Aihua Ma , Shishu Xie , Hongxu Hei
发明人： Liang Zou , Bo Wang , Xiandong Liu , Aihua Ma , Shishu Xie , Hongxu Hei
IPC分类号： C21D8/12 , C22C38/12 , H01F1/147 , C22C38/04 , C22C38/02 , C22C38/00 , C22C38/14 , C22C38/06
CPC分类号： C21D8/1261 , C21C7/0006 , C21C7/0645 , C21D8/12 , C21D8/1205 , C21D8/1233 , C21D2201/05 , C22C38/001 , C22C38/002 , C22C38/004 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/12 , C22C38/14 , H01F1/14791 , H01F1/16
摘要： An unoriented silicon steel having high magnetic conductivity and low iron loss at a working magnetic density of 1.0-1.5 T and method for manufacturing same. By proper deoxidation control in a RH refining and high-temperature treatment for a short time in a normalizing step, the method can reduce the amount of inclusions in the silicon steel and improve grain shape, so as to improve the magnetic conductivity and iron loss of the unoriented silicon steel at a magnetic density of 1.0-1.5 T.
摘要翻译：一种在1.0-1.5T的工作磁密度下具有高磁导率和低铁损的无取向硅钢及其制造方法。通过在正常化阶段的RH精炼和高温处理中进行适当的脱氧控制，该方法可以减少硅钢中的夹杂物的量并改善晶粒形状，从而提高磁导率和铁损磁性密度为1.0-1.5T的无取向硅钢。

17. 发明授权

US08792274B1 Multi-level memory cell read, program, and erase techniques 有权
标题翻译：多级存储单元读，编程和擦除技术
公开(公告)号：US08792274B1
公开(公告)日：2014-07-29
申请号：US13590230
申请日：2012-08-21
申请人： Qiang Tang , Bo Wang , Chih-Hsin Wang
发明人： Qiang Tang , Bo Wang , Chih-Hsin Wang
IPC分类号： G11C16/04 , G11C7/06
CPC分类号： G11C16/3445 , G11C7/1006 , G11C11/56 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C2013/0076
摘要： A system is provided and includes an array of cells, a first module, and a third module. The first module reads a state of a cell in the array to detect first bits stored in the cell. The third module, subsequent to the first module reading the state, performs a first operation on a first bit of the first bits and performs the first operation on a first of multiple signal inputs. The signal inputs indicate second bits of data to be stored in the cell. The third module performs a second operation on a second bit of the first bits and performs the second operation on a second one of the signal inputs. The first module, based on results of the first and second operations, performs a first erase operation or a first program operation on the cell to match the state of the cell to the second bits.
摘要翻译：提供了一种系统，包括一个单元阵列，一个第一模块和一个第三模块。第一模块读取阵列中的单元的状态以检测存储在单元中的第一位。第三模块在第一模块读取状态之后，对第一位的第一位执行第一操作，并且在多个信号输入中的第一个上执行第一操作。信号输入表示要存储在单元中的数据的第二位。第三模块对第一位的第二位执行第二操作，并对第二信号输入执行第二操作。第一模块基于第一和第二操作的结果，对单元执行第一擦除操作或第一程序操作，以将该单元的状态与第二位相匹配。

18. 发明申请

US20140029649A1 Advanced Multi-User Detector 有权
标题翻译：高级多用户检测器
公开(公告)号：US20140029649A1
公开(公告)日：2014-01-30
申请号：US14041491
申请日：2013-09-30
申请人： Richard Candell , Paul Ebert , John Fossaceca , Greg Handermann , Mark Holland , Lajuana Johnson , Bruce L. McKinley , Bo Wang , Ralph Eugene Crenshaw
发明人： Richard Candell , Paul Ebert , John Fossaceca , Greg Handermann , Mark Holland , Lajuana Johnson , Bruce L. McKinley , Bo Wang , Ralph Eugene Crenshaw
IPC分类号： H04B1/7103
CPC分类号： H04B1/7103 , H04B7/18513 , H04B7/216
摘要： A method for detecting multi-user signals including conducting a first energy burst detection detecting a first plurality of user signals as a first energy burst, attempting to decode a user signal from the first plurality of signals within the first energy burst, cancelling out a first user signal from the first energy burst if the first user signal is successfully decoded from the first energy burst, determining a second user signal to be discarded if the second user signal is not successfully decoded from the first energy burst, conducting a second energy burst detection detecting a second plurality of signals as a second burst, and iteratively cancelling out the first user signal successfully decoded from the first energy burst from the second energy burst, wherein the second energy burst detection is conducted when all user signals within the first energy burst are either cancelled out or determined to be discarded.
摘要翻译：一种用于检测多用户信号的方法，包括进行检测第一多个用户信号的第一能量突发检测作为第一能量突发，尝试从第一能量突发内的第一多个信号中解码用户信号，如果第一用户信号从第一能量突发成功解码，则从第一能量突发的用户信号，如果第二用户信号没有从第一能量突发成功解码，则确定要丢弃的第二用户信号，进行第二能量突发检测检测第二多个信号作为第二突发，并且迭代地从第二能量突发中消除从第一能量突发成功解码的第一用户信号，其中当第一能量突发内的所有用户信号为取消或决定被丢弃。

19. 发明授权

US08632021B2 Pump head assembly and pressure washer with such pump head assembly 有权
标题翻译：泵头组件和带有这种泵头组件的压力清洗机
公开(公告)号：US08632021B2
公开(公告)日：2014-01-21
申请号：US12702328
申请日：2010-02-09
申请人： Jiang Li , Bo Wang , Yingtang Ling
发明人： Jiang Li , Bo Wang , Yingtang Ling
IPC分类号： A62C5/02 , A62C31/00 , B05B9/00 , F23D11/40
CPC分类号： F04B49/24 , F04B17/03
摘要： The patent application relates to a pump head assembly. The pump head assembly includes a pump head which at least has a water inlet and a first water outlet between which a pressurizing unit is provided, and the pump head further includes a second water outlet, a throttle orifice is provided between the water inlet and the second water outlet, the throttle orifice is provided with a water outlet end and a water inlet end, the throttle orifice is provide with a liquid suction port, and a one way valve is provided on the liquid suction port. The pump head assembly realizes cleaning liquid suction by self-pressure of tap water, which lowers energy consumption, and effectively and reasonably saves energy sources.
摘要翻译：该专利申请涉及一种泵头组件。泵头组件包括至少具有进水口的泵头和设置有加压单元的第一出水口，泵头还包括第二出水口，节流孔设置在进水口和第二出水口，节流孔设有出水端和入水端，节流孔设有液体吸入口，单向阀设在液体吸入口上。泵头组件通过自来水自压实现清洗液吸入，降低能耗，有效合理地节约能源。

20. 发明申请

US20130313575A1 SEMI-INSULATING SILICON CARBIDE MONOCRYSTAL AND METHOD OF GROWING THE SAME 有权
标题翻译：半绝缘碳化硅单晶及其生长方法
公开(公告)号：US20130313575A1
公开(公告)日：2013-11-28
申请号：US13976351
申请日：2011-12-06
申请人： Xiaolong Chen , Chunjun Liu , Tonghua Peng , Longyuan Li , Bo Wang , Gang Wang , Wenjun Wang , Yu Liu
发明人： Xiaolong Chen , Chunjun Liu , Tonghua Peng , Longyuan Li , Bo Wang , Gang Wang , Wenjun Wang , Yu Liu
IPC分类号： H01L29/16 , H01L21/02
CPC分类号： H01L29/1608 , C30B23/00 , C30B23/002 , C30B23/005 , C30B23/06 , C30B29/36 , H01L21/02529 , H01L29/435
摘要： A semi-insulating silicon carbide monocrystal and a method of growing the same are disclosed. The semi-insulating silicon carbide monocrystal comprises intrinsic impurities, deep energy level dopants and intrinsic point defects. The intrinsic impurities are introduced unintentionally during manufacture of the silicon carbide monocrystal, and the deep energy level dopants and the intrinsic point defects are doped or introduced intentionally to compensate for the intrinsic impurities. The intrinsic impurities include shallow energy level donor impurities and shallow energy level acceptor impurities. A sum of a concentration of the deep energy level dopants and a concentration of the intrinsic point defects is greater than a difference between a concentration of the shallow energy level donor impurities and a concentration of the shallow energy level acceptor impurities, and the concentration of the intrinsic point defects is less than the concentration of the deep energy level dopants. The semi-insulating SiC monocrystal has resistivity greater than 1×105 Ω·cm at room temperature, and its electrical performances and crystal quality satisfy requirements for manufacture of microwave devices. The deep energy level dopants and the intrinsic point defects jointly serve to compensate the intrinsic impurities, so as to obtain a high quality semi-insulating single crystal.
摘要翻译：公开了一种半绝缘碳化硅单晶及其生长方法。半绝缘碳化硅单晶包括固有杂质，深能级掺杂剂和固有点缺陷。在碳化硅单晶的制造期间无意中引入固有杂质，并且有意地掺杂或引入深能级掺杂剂和固有点缺陷以补偿固有杂质。本征杂质包括浅能级供体杂质和浅能级受体杂质。深能级掺杂剂的浓度和本征点缺陷的浓度的总和大于浅能级供体杂质的浓度与浅能级受体杂质的浓度之间的差异，内在点缺陷小于深能级掺杂剂的浓度。半绝缘SiC单晶在室温下的电阻率大于1×105Ω·cm，其电性能和晶体质量满足微波器件制造要求。深能级掺杂剂和固有点缺陷共同用于补偿固有杂质，从而获得高质量的半绝缘单晶。

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