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11. 发明申请

US20090138417A1 Parameter Adjustment Device 审中-公开
标题翻译：参数调整装置
公开(公告)号：US20090138417A1
公开(公告)日：2009-05-28
申请号：US11887620
申请日：2006-04-03
申请人： Masahiro Murakawa , Keiichi Ito , Shunsuke Baba
发明人： Masahiro Murakawa , Keiichi Ito , Shunsuke Baba
IPC分类号： G06N3/12
CPC分类号： G06F17/5036 , G06N3/126
摘要： Efficient and high-accuracy parameter adjustment is performed by applying a genetic algorithm to a parameter adjustment such as a physical model of a transistor and so on. A parameter adjusting device includes a device generating new parameter genes by an initial population generating device and a special crossover processing by a Latin hyper square method. Also, a normalization device is provided for applying to parameters which are real numbers. Moreover, for example, to exactly meet a specific property of the transistor (MOSFET), an evaluation device which evaluates a parameter in consideration of a log scale, is provided. According to the above-mentioned structure, the genetic algorithm can be applied to the parameter adjustment with a large number of parameters such as the physical model of the transistor and so on, so that a parameter group can be determined with a high degree of accuracy within a short time.
摘要翻译：通过对诸如晶体管的物理模型等的参数调整应用遗传算法来执行高效且高精度的参数调整。参数调整装置包括通过初始种群生成装置生成新参数基因的装置和通过拉丁超平方法的特殊交叉处理。而且，提供归一化装置以应用作为实数的参数。此外，例如，为了精确地满足晶体管（MOSFET）的特定性质，提供了考虑对数标度来评估参数的评估装置。根据上述结构，遗传算法可以应用于诸如晶体管的物理模型等大量参数的参数调整，使得可以以高精度确定参数组在短时间内。

12. 发明授权

US06753579B2 SOI MOSFET device having second gate electrode for threshold voltage Control 失效
标题翻译：具有用于阈值电压控制的第二栅电极的SOI MOSFET器件
公开(公告)号：US06753579B2
公开(公告)日：2004-06-22
申请号：US10425956
申请日：2003-04-30
申请人： Shunsuke Baba
发明人： Shunsuke Baba
IPC分类号： H01L2978
CPC分类号： H01L29/78648 , H01L29/78615 , H01L29/78645
摘要： In order to apply a predetermined voltage to a silicon layer (3) to control a threshold voltage, a second gate electrode (5) is provided on the surface of the silicon layer (3) with a gate oxide film (insulating layer) (4) interposed therebetween so as to fall within the same surface of the silicon layer (3) as a surface on which a source (7) and a drain (8) placed in the silicon layer (3) and a first gate electrode (6) are disposed.
摘要翻译：为了对硅层（3）施加预定的电压以控制阈值电压，在硅层（3）的表面上设置第二栅极（5），栅极氧化膜（绝缘层）（4）），以便落在硅层（3）的与沉积在硅层（3）中的源极（7）和漏极（8）的表面和第一栅电极（6）相同的表面内，被处置。

13. 发明授权

US5977592A Semiconductor device having an improved structure and capable of greatly reducing its occupied area 失效
标题翻译：半导体器件具有改进的结构并且能够大大减少其占用面积
公开(公告)号：US5977592A
公开(公告)日：1999-11-02
申请号：US925091
申请日：1997-09-08
申请人： Shunsuke Baba
发明人： Shunsuke Baba
IPC分类号： H01L29/41 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/10 , H01L29/417 , H01L29/78 , H01L29/00
CPC分类号： H01L29/41766 , H01L27/0928 , H01L29/1087 , H01L29/78
摘要： A semiconductor device includes a source and a drain formed in a device region of a semiconductor substrate, and an electrode withdrawal portion having an impurity concentration higher than that of the device region. The electrode withdrawal portion is formed so as to adjoin either one of the source and drain. An electrode for the source or drain adjacent to the electrode withdrawal portion is used jointly as an electrode for the electrode withdrawal portion.
摘要翻译：半导体器件包括形成在半导体衬底的器件区域中的源极和漏极以及杂质浓度高于器件区域的电极引出部分。电极取出部形成为与源极和漏极中的任一个相邻。用于与电极取出部相邻的源极或漏极的电极共同地用作电极取出部的电极。

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