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    • 15. 发明授权
    • Method of manufacturing semiconductor device comprising the step of doping semiconductor film through contact hole
    • 制造半导体器件的方法包括通过接触孔掺杂半导体膜的步骤
    • US08435892B2
    • 2013-05-07
    • US12908521
    • 2010-10-20
    • Atsuo IsobeKeiko SaitoTomohiko Sato
    • Atsuo IsobeKeiko SaitoTomohiko Sato
    • H01L21/44
    • H01L29/4908H01L29/66757H01L29/78621
    • It is an object of an invention disclosed in the present specification to provide a transistor having low contact resistance. In the transistor, a semiconductor film including an impurity element imparting P-type or N-type conductivity, an insulating film formed thereover, and an electrode or a wiring that is electrically connected to the semiconductor film through a contact hole formed at least in the insulating film are included; the semiconductor film has a first range of a concentration of the impurity element (1×1020/cm3 or less) that is included in a deeper region than predetermined depth, and a second range of a concentration of the impurity element (more than 1×1020/cm3) that is included in a shallower region than the predetermined depth; and a deeper region than a portion in contact with the electrode or the wiring in the semiconductor film is in the first range of the concentration of the impurity element.
    • 本说明书中公开的发明的目的是提供具有低接触电阻的晶体管。 在晶体管中,包括赋予P型或N型导电性的杂质元素的半导体膜,形成在其上的绝缘膜,以及电极或布线,其通过至少形成在所述半导体膜上的接触孔与半导体膜电连接 包括绝缘膜; 半导体膜具有包含在比预定深度更深的区域中的杂质元素的浓度的第一范围(1×10 20 / cm 3以下),并且杂质元素的浓度的第二范围(大于1× 1020 / cm3),其被包括在比预定深度更浅的区域中; 并且比半导体膜中与电极或布线接触的部分更深的区域在杂质元素的浓度的第一范围内。
    • 16. 发明授权
    • Objective lens actuator and an optical pickup
    • 物镜致动器和光学拾取器
    • US08161503B2
    • 2012-04-17
    • US12540439
    • 2009-08-13
    • Keiko SaitoKatsuhiko KimuraTakahiro YamaguchiYoshihiro Sato
    • Keiko SaitoKatsuhiko KimuraTakahiro YamaguchiYoshihiro Sato
    • G11B7/12
    • G11B7/1374G11B7/121G11B2007/0006
    • An objective lens actuator comprises, two objective lenses, each for focusing lights upon an optical disc, an objective lens holder member for holding the objective lenses thereon, and lens protectors for preventing the objective lenses from being contacted on the optical disc, wherein the lens protectors include first and second lens protectors, which are provided on both end portions of the objective lens holder member in a tracking direction, and a third lens protector, which is provided in a middle of the two objective lenses, wherein the first and second lens protectors, which are provided on both end portions of the objective lens holder member in the tracking direction, are provided the objective lenses and end portion of the objective lens holder member in the tracking direction, and the third lens protector, which is provided between the objective lenses, has a height closer to that of the optical disc than the protectors, which are provided on both end portions of the objective lens holder member in the tracking direction.
    • 物镜致动器包括两个物镜,每个用于将光聚焦在光盘上,用于将物镜保持在其上的物镜保持器构件和用于防止物镜在光盘上接触的透镜保护器,其中透镜 保护器包括在跟踪方向上设置在物镜保持器构件的两个端部上的第一和第二透镜保护器,以及设置在两个物镜的中间的第三透镜保护器,其中第一和第二透镜 在跟踪方向上设置在物镜保持器构件的两端部上的保护器设置在跟踪方向上的物镜和物镜保持器构件的端部,并且第三透镜保护器设置在 与设置在物体的两端部的保护体相比,物镜的高度比光盘高 ve透镜保持器构件沿跟踪方向。
    • 19. 发明申请
    • Transistor, and display device, electronic device, and semiconductor device using the same
    • 晶体管,显示装置,电子装置以及使用其的半导体装置
    • US20070052021A1
    • 2007-03-08
    • US11503414
    • 2006-08-14
    • Atsuo IsobeKeiko SaitoTomohiko Sato
    • Atsuo IsobeKeiko SaitoTomohiko Sato
    • H01L27/12H01L21/84
    • H01L29/4908H01L29/66757H01L29/78621
    • It is an object of an invention disclosed in the present specification to provide a transistor having low contact resistance. In the transistor, a semiconductor film including an impurity element imparting P-type or N-type conductivity, an insulating film formed thereover, and an electrode or a wiring that is electrically connected to the semiconductor film through a contact hole formed at least in the insulating film are included; the semiconductor film has a first range of a concentration of the impurity element (1×1020/cm3 or less) that is included in a deeper region than predetermined depth, and a second range of a concentration of the impurity element (more than 1×1020/cm3) that is included in a shallower region than the predetermined depth; and a deeper region than a portion in contact with the electrode or the wiring in the semiconductor film is in the first range of the concentration of the impurity element.
    • 本说明书中公开的发明的目的是提供具有低接触电阻的晶体管。 在晶体管中,包括赋予P型或N型导电性的杂质元素的半导体膜,形成在其上的绝缘膜,以及电极或布线,其通过至少形成在所述半导体膜上的接触孔与半导体膜电连接 包括绝缘膜; 半导体膜具有包含在比预定深度更深的区域中的杂质元素的浓度的第一范围(1×10 20 / cm 3以下),以及 包含在比预定深度更浅的区域中的杂质元素的浓度的第二范围(大于1×10 20 / cm 3); 并且比半导体膜中与电极或布线接触的部分更深的区域在杂质元素的浓度的第一范围内。