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11. 发明申请

US20090084944A1 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE USING THE SAME 有权
标题翻译：半导体器件和使用该器件的电子器件
公开(公告)号：US20090084944A1
公开(公告)日：2009-04-02
申请号：US12328978
申请日：2008-12-05
申请人： Atsushi HIROSE , Tatsuya ARAO
发明人： Atsushi HIROSE , Tatsuya ARAO
IPC分类号： G01J1/44
CPC分类号： H01L27/1443 , G01J1/1626 , G01J1/4228 , G01J1/44
摘要： The semiconductor device includes a first photodiode, a second photodiode which is shielded from light, a first circuit group including a voltage follower circuit, a second circuit group, and a compensation circuit, in which an output from the first photodiode is inputted to the voltage follower circuit of the first circuit group, an output from the first circuit group is inputted to the compensation circuit, and an output from the second photodiode is inputted to the compensation circuit through the second circuit group. By adding or subtracting these inputs in the compensation circuit, an output fluctuation due to temperature of the first photodiode is removed. Note that a reference potential is supplied to the first photodiode so that an open circuit voltage is outputted, and a potential is supplied to the second photodiode so that a forward bias is applied to the second photodiode.
摘要翻译：半导体器件包括第一光电二极管，屏蔽光的第二光电二极管，包括电压跟随器电路，第二电路组和补偿电路的第一电路组，其中第一光电二极管的输出被输入到电压第一电路组的跟随器电路，第一电路组的输出被输入到补偿电路，并且来自第二光电二极管的输出通过第二电路组输入到补偿电路。通过在补偿电路中增加或减去这些输入，消除由于第一光电二极管的温度引起的输出波动。注意，参考电位被提供给第一光电二极管，使得输出开路电压，并且向第二光电二极管提供电位，使得正向偏压被施加到第二光电二极管。

12. 发明申请

US20090072321A1 THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管，半导体器件及其制造方法
公开(公告)号：US20090072321A1
公开(公告)日：2009-03-19
申请号：US12269270
申请日：2008-11-12
申请人： Tatsuya ARAO , Hiroyuki MIYAKE
发明人： Tatsuya ARAO , Hiroyuki MIYAKE
IPC分类号： H01L27/092
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/127 , H01L27/1288 , H01L27/1296
摘要： A semiconductor element is operated without being affected even when the substrate is largely affected by heat shrink such as a large substrate. Furthermore, a thin film semiconductor circuit and a thin film semiconductor device each having the semiconductor element. Also, a semiconductor element is operated without being affected even if there is slight mask deviation. In view of them, a plurality of gate electrodes formed so as to overlap a lower concentration impurity region of a semiconductor layer than drain regions on a drain region side. Also, source regions and the drain regions corresponding to the respective gate electrodes are formed so that current flows in opposite directions each other through channel regions corresponding to the gate electrodes. Further, the number of the channel regions in which a current flows in a first direction is equal to the number of the channel regions in which a current flows in a direction opposite to the first direction.
摘要翻译：即使当基板受到诸如大基板的热收缩的很大影响时，也不会影响半导体元件。此外，每个都具有半导体元件的薄膜半导体电路和薄膜半导体器件。此外，即使存在轻微的掩模偏差，也不会影响半导体元件的影响。鉴于它们，多个栅电极被形成为与漏极区侧的漏极区重叠的半导体层的较低浓度杂质区。此外，形成与各个栅电极对应的源极区域和漏极区域，使得电流通过与栅电极对应的沟道区域彼此相反的方向流动。此外，电流沿第一方向流动的通道区域的数量等于电流沿与第一方向相反的方向流动的沟道区域的数量。

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