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11. 发明申请

US20100081254A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SEMICONDUCTOR LAYER 有权
标题翻译：制造SOI衬底的方法及制造单晶半导体层的方法
公开(公告)号：US20100081254A1
公开(公告)日：2010-04-01
申请号：US12564973
申请日：2009-09-23
申请人： Akihisa SHIMOMURA , Fumito ISAKA , Sho KATO , Takashi HIROSE
发明人： Akihisa SHIMOMURA , Fumito ISAKA , Sho KATO , Takashi HIROSE
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/0262 , Y02E10/547
摘要： An object is to provide a single crystal semiconductor layer with extremely favorable characteristics without performing CMP treatment or heat treatment at high temperature. Further, an object is to provide a semiconductor substrate (or an SOI substrate) having the above single crystal semiconductor layer. A first single crystal semiconductor layer is formed by a vapor-phase epitaxial growth method on a surface of a second single crystal semiconductor layer over a substrate; the first single crystal semiconductor layer and a base substrate are bonded to each other with an insulating layer interposed therebetween; and the first single crystal semiconductor layer and the second single crystal semiconductor layer are separated from each other at an interface therebetween so as to provide the first single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween. Thus, an SOI substrate can be manufactured.
摘要翻译：本发明的目的是提供具有非常有利特性的单晶半导体层，而不需要在高温下进行CMP处理或热处理。此外，目的在于提供具有上述单晶半导体层的半导体衬底（或SOI衬底）。在衬底上的第二单晶半导体层的表面上，通过气相外延生长法形成第一单晶半导体层; 第一单晶半导体层和基底基板之间具有绝缘层彼此接合; 并且第一单晶半导体层和第二单晶半导体层在它们之间的界面处彼此分离，以便在绝缘层之间提供第一单晶半导体层，其中绝缘层位于基底衬底上。因此，可以制造SOI衬底。

12. 发明申请

US20090162992A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090162992A1
公开(公告)日：2009-06-25
申请号：US12339413
申请日：2008-12-19
申请人： Sho KATO , Fumito ISAKA , Tetsuya KAKEHATA , Hiromichi GODO , Akihisa SHIMOMURA
发明人： Sho KATO , Fumito ISAKA , Tetsuya KAKEHATA , Hiromichi GODO , Akihisa SHIMOMURA
IPC分类号： H01L21/30 , H01L21/02 , H01L21/18
CPC分类号： H01L21/84 , H01L21/76254 , H01L27/1203 , H01L29/78606 , H01L29/78621 , H01L29/78696
摘要： There are provided a semiconductor device having a structure which can realize not only suppression of a punch-through current but also reuse of a silicon wafer used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. A semiconductor film into which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted is formed over a substrate, and a single crystal semiconductor film is bonded to the semiconductor film by an SOI technique to form a stacked semiconductor film. A channel formation region is formed using the stacked semiconductor film, thereby suppressing a punch-through current in a semiconductor device.
摘要翻译：提供了一种半导体器件及其制造方法，该半导体器件不仅可以实现穿通电流的抑制，而且可以实现用于接合的硅晶片的再利用，在制造使用SOI技术的半导体器件中。在衬底上形成其中注入了与源极区域和漏极区域相反的导电类型的杂质的半导体膜，并且通过SOI技术将单晶半导体膜结合到半导体膜，以形成堆叠半导体膜。使用堆叠的半导体膜形成沟道形成区域，从而抑制半导体器件中的穿通电流。

13. 发明申请

US20120007078A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20120007078A1
公开(公告)日：2012-01-12
申请号：US13239853
申请日：2011-09-22
申请人： Akihisa SHIMOMURA , Hidekazu MIYAIRI , Fumito ISAKA , Yasuhiro JINBO , Junya MARUYAMA
发明人： Akihisa SHIMOMURA , Hidekazu MIYAIRI , Fumito ISAKA , Yasuhiro JINBO , Junya MARUYAMA
IPC分类号： H01L27/12
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02532 , H01L21/02592 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/1266 , H01L27/1285 , H01L29/66757 , H01L29/78603 , H01L29/78675
摘要： It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.
摘要翻译：本发明的目的是提供一种制造晶体硅器件和半导体器件的方法，其中可以抑制衬底，基底保护膜和晶体硅膜中的裂纹的形成。首先，在基板上形成包含半导体膜的层，并加热。基板的热膨胀系数为6×10-7 /℃至38×10-7 /℃，优选为6×10-7 /℃至31.8×10-7 /℃。接下来，用激光束照射包含半导体膜的层，使半导体膜结晶化，形成结晶半导体膜。包括半导体膜的层的总应力在加热步骤之后为-500N / m至+ 50N / m，优选为-150N / m至0N / m。

14. 发明申请

US20100129948A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体基板的方法和制造半导体器件的方法
公开(公告)号：US20100129948A1
公开(公告)日：2010-05-27
申请号：US12621541
申请日：2009-11-19
申请人： Fumito ISAKA , Sho KATO , Yu ARITA , Akihisa SHIMOMURA
发明人： Fumito ISAKA , Sho KATO , Yu ARITA , Akihisa SHIMOMURA
IPC分类号： H01L21/18 , H01L31/18
CPC分类号： H01L21/76254 , H01L31/028 , H01L31/075 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An object is to manufacture a semiconductor substrate having a single crystal semiconductor layer with favorable characteristics, without requiring CMP treatment and/or heat treatment at high temperature. In addition, another object is to improve productivity of semiconductor substrates. Vapor-phase epitaxial growth is performed by using a first single crystal semiconductor layer provided over a first substrate as a seed layer, whereby a second single crystal semiconductor layer is formed over the first single crystal semiconductor layer, and separation is performed at an interface of the both layers. Thus, the second single crystal semiconductor layer is transferred to the second substrate to provide a semiconductor substrate, and the semiconductor substrate is reused by performing laser light treatment on the seed layer.
摘要翻译：本发明的目的是制造具有良好特性的单晶半导体层的半导体衬底，而不需要在高温下进行CMP处理和/或热处理。此外，另一个目的是提高半导体衬底的生产率。通过使用设置在第一基板上的第一单晶半导体层作为晶种层来进行气相外延生长，由此在第一单晶半导体层上形成第二单晶半导体层，并且在第一单晶半导体层的界面上进行分离两层。因此，将第二单晶半导体层转移到第二基板以提供半导体衬底，并且通过对籽晶层进行激光处理来重新使用半导体衬底。

15. 发明申请

US20110092013A1 Method Of Manufacturing Photoelectric Conversion Device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US20110092013A1
公开(公告)日：2011-04-21
申请号：US12977213
申请日：2010-12-23
申请人： Fumito ISAKA , Sho KATO , Koji DAIRIKI
发明人： Fumito ISAKA , Sho KATO , Koji DAIRIKI
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022433 , H01L31/03762 , H01L31/0725 , H01L31/1864 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
摘要翻译：在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在一个表面侧形成第一杂质半导体层和第一电极。在接合第一电极和支撑衬底之后，使用脆弱层或附近分离单晶半导体衬底作为分离平面，从而在支撑衬底上形成第一单晶半导体层。在第一单晶半导体层上形成非晶半导体层，通过对非晶半导体层的固相生长进行热处理形成第二单晶半导体层。在第二单晶半导体层上形成具有与第一杂质半导体层的导电类型相反的导电类型的第二杂质半导体层和第二电极。

16. 发明申请

US20090305469A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090305469A1
公开(公告)日：2009-12-10
申请号：US12467454
申请日：2009-05-18
申请人： Sho KATO , Satoshi TORIUMI , Fumito ISAKA , Hideto OHNUMA
发明人： Sho KATO , Satoshi TORIUMI , Fumito ISAKA , Hideto OHNUMA
IPC分类号： H01L21/762 , H01L21/336
CPC分类号： H01L21/84 , H01L21/76251
摘要： A stack including at least an insulating layer, a first electrode, and a first impurity semiconductor layer is provided over a supporting substrate; a first semiconductor layer to which an impurity element imparting one conductivity type is added is formed over the first impurity semiconductor layer; a second semiconductor layer to which an impurity element imparting the one conductivity type is added is formed over the first semiconductor layer under a condition different from that of the first semiconductor layer; crystallinity of the first semiconductor layer and crystallinity of the second semiconductor layer are improved by a solid-phase growth method to form a second impurity semiconductor layer; an impurity element imparting the one conductivity type and an impurity element imparting a conductivity type different from the one conductivity type are added to the second impurity semiconductor layer; and a gate electrode layer is formed via a gate insulating layer.
摘要翻译：至少包括绝缘层，第一电极和第一杂质半导体层的叠层设置在支撑基板上; 在所述第一杂质半导体层上形成添加有赋予一种导电类型的杂质元素的第一半导体层; 在与第一半导体层不同的条件下，在第一半导体层上形成添加有赋予一种导电型的杂质元素的第二半导体层; 通过固相生长法提高第一半导体层的结晶度和第二半导体层的结晶度，形成第二杂质半导体层; 赋予一种导电类型的杂质元素和赋予不同于一种导电类型的导电类型的杂质元素添加到第二杂质半导体层; 并且经由栅极绝缘层形成栅极电极层。

17. 发明申请

US20090142879A1 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：制造光电转换器件的方法
公开(公告)号：US20090142879A1
公开(公告)日：2009-06-04
申请号：US12324220
申请日：2008-11-26
申请人： Fumito ISAKA , Sho Kato , Koji Dairiki
发明人： Fumito ISAKA , Sho Kato , Koji Dairiki
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022433 , H01L31/03762 , H01L31/0725 , H01L31/1864 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
摘要翻译：在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在一个表面侧形成第一杂质半导体层和第一电极。在接合第一电极和支撑衬底之后，使用脆弱层或附近分离单晶半导体衬底作为分离平面，从而在支撑衬底上形成第一单晶半导体层。在第一单晶半导体层上形成非晶半导体层，通过对非晶半导体层的固相生长进行热处理形成第二单晶半导体层。在第二单晶半导体层上形成具有与第一杂质半导体层的导电类型相反的导电类型的第二杂质半导体层和第二电极。

18. 发明申请

US20120184064A1 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 失效
标题翻译：制造光电转换器件的方法
公开(公告)号：US20120184064A1
公开(公告)日：2012-07-19
申请号：US13426655
申请日：2012-03-22
申请人： Fumito ISAKA , Sho KATO , Koji DAIRIKI
发明人： Fumito ISAKA , Sho KATO , Koji DAIRIKI
IPC分类号： H01L31/20
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022433 , H01L31/03762 , H01L31/0725 , H01L31/1864 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
摘要翻译：在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在一个表面侧形成第一杂质半导体层和第一电极。在接合第一电极和支撑衬底之后，使用脆弱层或附近分离单晶半导体衬底作为分离平面，从而在支撑衬底上形成第一单晶半导体层。在第一单晶半导体层上形成非晶半导体层，通过对非晶半导体层的固相生长进行热处理形成第二单晶半导体层。在第二单晶半导体层上形成具有与第一杂质半导体层的导电类型相反的导电类型的第二杂质半导体层和第二电极。

19. 发明申请

US20110129969A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110129969A1
公开(公告)日：2011-06-02
申请号：US13024360
申请日：2011-02-10
申请人： Sho KATO , Satoshi TORIUMI , Fumito ISAKA , Hideto OHNUMA
发明人： Sho KATO , Satoshi TORIUMI , Fumito ISAKA , Hideto OHNUMA
IPC分类号： H01L21/336
CPC分类号： H01L21/84 , H01L21/76251
摘要： A stack including at least an insulating layer, a first electrode, and a first impurity semiconductor layer is provided over a supporting substrate; a first semiconductor layer to which an impurity element imparting one conductivity type is added is formed over the first impurity semiconductor layer; a second semiconductor layer to which an impurity element imparting the one conductivity type is added is formed over the first semiconductor layer under a condition different from that of the first semiconductor layer; crystallinity of the first semiconductor layer and crystallinity of the second semiconductor layer are improved by a solid-phase growth method to form a second impurity semiconductor layer; an impurity element imparting the one conductivity type and an impurity element imparting a conductivity type different from the one conductivity type are added to the second impurity semiconductor layer; and a gate electrode layer is formed via a gate insulating layer.
摘要翻译：至少包括绝缘层，第一电极和第一杂质半导体层的叠层设置在支撑基板上; 在所述第一杂质半导体层上形成添加有赋予一种导电类型的杂质元素的第一半导体层; 在与第一半导体层不同的条件下，在第一半导体层上形成添加有赋予一种导电型的杂质元素的第二半导体层; 通过固相生长法提高第一半导体层的结晶度和第二半导体层的结晶度，形成第二杂质半导体层; 赋予一种导电类型的杂质元素和赋予不同于一种导电类型的导电类型的杂质元素添加到第二杂质半导体层; 并且经由栅极绝缘层形成栅极电极层。

20. 发明申请

US20090269906A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 有权
标题翻译：制造半导体基板的方法
公开(公告)号：US20090269906A1
公开(公告)日：2009-10-29
申请号：US12426305
申请日：2009-04-20
申请人： Sho KATO , Satoshi TORIUMI , Fumito ISAKA
发明人： Sho KATO , Satoshi TORIUMI , Fumito ISAKA
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L21/02532 , H01L21/0262 , H01L21/02667 , H01L21/02686 , H01L21/76254
摘要： A semiconductor substrate is provided by a method suitable for mass production. Further, a semiconductor substrate having an excellent characteristic with effective use of resources is provided. A single crystal semiconductor substrate is irradiated with ions to form a damaged region in the single crystal semiconductor substrate; an insulating layer is formed over the single crystal semiconductor substrate; the insulating layer and a supporting substrate are bonded to each other; a first single crystal semiconductor layer is formed over the supporting substrate by partially separating the single crystal semiconductor substrate at the damaged region; a first semiconductor layer is formed over the first single crystal semiconductor layer; a second semiconductor layer is formed over the first semiconductor layer with a different condition from that used for forming the first semiconductor layer; a second single crystal semiconductor layer is formed by improving crystallinity of the first and the second semiconductor layers.
摘要翻译：通过适合于批量生产的方法提供半导体衬底。此外，提供了具有优异特性的具有有效利用资源的半导体衬底。单晶半导体衬底被照射以在单晶半导体衬底中形成受损区域; 在单晶半导体衬底上形成绝缘层; 绝缘层和支撑基板彼此接合; 通过在损伤区域部分分离单晶半导体衬底，在支撑衬底上形成第一单晶半导体层; 在所述第一单晶半导体层上形成第一半导体层; 在与第一半导体层的形成不同的条件下，在第一半导体层上形成第二半导体层; 通过提高第一和第二半导体层的结晶度来形成第二单晶半导体层。

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