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11. 发明授权

US4458849A Safety device for a winding apparatus 失效
标题翻译：卷绕装置的安全装置
公开(公告)号：US4458849A
公开(公告)日：1984-07-10
申请号：US445720
申请日：1982-11-30
申请人： Yuzuru Miyake , Takami Sugioka , Shoichi Murakami , Hideaki Ibuki
发明人： Yuzuru Miyake , Takami Sugioka , Shoichi Murakami , Hideaki Ibuki
IPC分类号： B65H54/74 , B65H54/44 , B65H59/38 , B65H63/00 , B65H63/06 , B65H63/04
CPC分类号： B65H54/44 , B65H59/385 , B65H2701/31
摘要： A safety device of a spindle drive type winding apparatus wherein the rotational speed of a spindle on which a yarn package is formed is controlled in accordance with a peripheral speed of a yarn package formed on the spindle or tension in yarn to be wound to form a yarn package in such a manner that the rotational speed is gradually decreased during a normal winding operation. The device comprises:a member for detecting the driving rotational speed of the spindle;a minimum value holding member for holding the minimum value of the driving rotational speed of the spindle from the start of the normal winding operation to the time just before the measurement of the rotational speed by means of the detecting member; anda member for comparing the rotational speed detected by the detecting member with the minimum value held in the minimum value holding member and for emitting a stop signal to the winding apparatus when the rotational speed is larger than the minimum value by at least a predetermined allowance.
摘要翻译：一种主轴驱动式卷绕装置的安全装置，其中，形成有纱线卷装的主轴的旋转速度根据主轴上形成的纱线卷装的圆周速度或待卷绕的纱线的张力进行控制，形成纱线卷装的方式使得在正常卷绕操作期间转速逐渐降低。该装置包括：用于检测主轴的驱动转速的构件; 最小值保持构件，其用于将所述主轴的驱动旋转速度的最小值从正常卷绕操作开始到通过所述检测构件测量所述旋转速度之前的时间; 以及用于将由检测构件检测的转速与保持在最小值保持构件中的最小值进行比较的构件，并且当转速大于最小值至少预定容许量时，向卷绕装置发出停止信号。

12. 发明申请

US20140220711A1 APPARATUS, METHOD AND PROGRAM FOR MANUFACTURING NITRIDE FILM 有权
标题翻译：装置，方法和程序制造氮化物膜
公开(公告)号：US20140220711A1
公开(公告)日：2014-08-07
申请号：US14238289
申请日：2012-05-22
申请人： Shoichi Murakami , Masayasu Hatashita
发明人： Shoichi Murakami , Masayasu Hatashita
IPC分类号： H01L21/02 , H01L21/66
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/509 , H01L21/0214 , H01L21/02274 , H01L22/12
摘要： A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.
摘要翻译：氮化膜制造装置通过等离子体CVD技术在设置在室中的基板上形成氮化膜。具体而言，氮化膜制造装置包括：控制器，用于计算用于施加具有较高频率的第一高频电力的第一周期和用于施加具有相对较低频率的第二高频功率的第二周期，以获得期望的压缩应力或氮化物膜的拉伸应力，基于氮化物膜的折射率的分布和/或氮化物膜的沉积速率的分布，该分布落在预定数值范围内并且使用第一高频功率获得和/或独立地施加的用于形成氮化物膜的第二高频电力。

13. 发明申请

US20130115772A1 Etching Method 有权
标题翻译：蚀刻方法
公开(公告)号：US20130115772A1
公开(公告)日：2013-05-09
申请号：US13809624
申请日：2011-07-11
申请人： Akimitsu Oishi , Shoichi Murakami
发明人： Akimitsu Oishi , Shoichi Murakami
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655 , H01L29/1608
摘要： The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to a temperature equal to or higher than 200° C., SF6 gas is supplied into a processing chamber and plasma is generated from the SF6 gas, and a bias potential is applied to a platen, thereby isotropically etching the silicon carbide substrate K, and a second etching step in which the silicon carbide substrate K is heated to a temperature equal to or higher than 200° C., SF6 gas and O2 gas are supplied into the processing chamber and plasma is generated from the SF6 gas and the O2 gas, and a bias potential is applied to the platen on which the silicon carbide substrate K is placed, thereby etching the silicon carbide substrate K while forming a silicon oxide film as passivation film on the silicon carbide substrate K are alternately repeated.
摘要翻译：本发明涉及能够以更高的精度蚀刻碳化硅衬底的蚀刻方法。将碳化硅衬底K加热至等于或高于200℃的第一蚀刻步骤，将SF 6气体供应到处理室中，并从SF 6气体产生等离子体，并将偏置电位施加到压板，从而各向同性蚀刻碳化硅衬底K;以及第二蚀刻步骤，其中将碳化硅衬底K加热到等于或高于200℃的温度，将SF 6气体和O 2气体供应到处理室并且从SF 6气体和O 2气体产生等离子体，并且将偏置电位施加到其上放置碳化硅衬底K的压板上，从而蚀刻碳化硅衬底K，同时在其上形成氧化硅膜作为钝化膜交替地重复碳化硅衬底K.

14. 发明授权

US08148504B2 Aminoglycoside antibiotics 有权
标题翻译：氨基糖苷类抗生素
公开(公告)号：US08148504B2
公开(公告)日：2012-04-03
申请号：US12227861
申请日：2007-06-01
申请人： Yoshihiko Kobayashi , Yoshihisa Akiyama , Takeshi Murakami , Nobuto Minowa , Masaki Tsushima , Yukiko Hiraiwa , Shoichi Murakami , Mitsuhiro Abe , Kazushige Sasaki , Shigeru Hoshiko , Toshiaki Miyake , Yoshiaki Takahashi , Daishiro Ikeda
发明人： Yoshihiko Kobayashi , Yoshihisa Akiyama , Takeshi Murakami , Nobuto Minowa , Masaki Tsushima , Yukiko Hiraiwa , Shoichi Murakami , Mitsuhiro Abe , Kazushige Sasaki , Shigeru Hoshiko , Toshiaki Miyake , Yoshiaki Takahashi , Daishiro Ikeda
IPC分类号： C07H13/02
CPC分类号： C07H15/234 , C07H15/224
摘要： This invention relates to novel aminoglycoside antibiotics, which have potent antimicrobial activity against bacteria, which induce infectious diseases, particularly MRSA, and has no significant nephrotoxicity, and process for producing them. More particularly, the present invention relates to compounds represented by formula (Ia) or their pharmacologically acceptable salts or solvates, or their diastereomer mixtures, antimicrobial agents comprising them, and a process for producing them.
摘要翻译：本发明涉及对细菌具有强力抗微生物活性的新型氨基糖苷类抗生素，其诱导感染性疾病，特别是MRSA，并且没有显着的肾毒性，以及生产它们的方法。更具体地，本发明涉及由式（Ia）表示的化合物或其药理学上可接受的盐或溶剂合物或其非对映体混合物，包含它们的抗微生物剂及其制备方法。

15. 发明授权

US07754613B2 Etching method and etching apparatus 有权
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：US07754613B2
公开(公告)日：2010-07-13
申请号：US11459646
申请日：2006-07-25
申请人： Shoichi Murakami , Takashi Yamamoto , Tatsuo Hiramura
发明人： Shoichi Murakami , Takashi Yamamoto , Tatsuo Hiramura
IPC分类号： H01L21/311 , H01L21/461 , H01L21/302
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32449 , H01J37/32706 , H01J2237/334 , H01L21/30655
摘要： Etching and protective-film deposition operations E and D are in alternation repeatedly executed on a silicon substrate carried on a platform within a processing chamber. With gas inside the processing chamber having been exhausted to pump down the chamber interior, in the etching operation E, the substrate is etched by supplying etching gas into the chamber and converting it into plasma and applying a bias potential to the platform, and in the protective-film deposition operation D, a protective film is formed on the silicon substrate by supplying protective-film deposition gas into the processing chamber and converting it into plasma. When a predetermined time prior to the close of operations E and D (time intervals indicated by reference marks Ee and De) is reached, the supply of etching or protective-film deposition gas is halted, and the exhaust flow rate of gas exhausted from the chamber is made greater than that previously.
摘要翻译：蚀刻和保护膜沉积操作E和D在处理室内的平台上承载的硅衬底上重复执行。由于处理室内的气体已被排出以抽空腔室内部，所以在蚀刻操作E中，通过向腔室中提供蚀刻气体并将其转换成等离子体并向平台施加偏置电位来蚀刻衬底，并且在保护膜沉积操作D，通过向处理室中提供保护膜沉积气体并将其转换成等离子体，在硅衬底上形成保护膜。当达到操作结束E和D（由参考标记Ee和De指示的时间间隔）之前的预定时间时，停止供应蚀刻或保护膜沉积气体，并且从室比以前更大。

16. 发明申请

US20090186841A1 Novel aminoglycoside antibiotics 有权
标题翻译：新型氨基糖苷类抗生素
公开(公告)号：US20090186841A1
公开(公告)日：2009-07-23
申请号：US12227861
申请日：2007-06-01
申请人： Yoshihiko Kobayashi , Yoshihisa Akiyama , Takeshi Murakami , Nobuto Minowa , Masaki Tsushima , Yukiko Hiraiwa , Shoichi Murakami , Mitsuhiro Abe , Kazushige Sasaki , Shigeru Hoshiko , Toshiaki Miyake , Yoshiaki Takahashi , Daishiro Ikeda
发明人： Yoshihiko Kobayashi , Yoshihisa Akiyama , Takeshi Murakami , Nobuto Minowa , Masaki Tsushima , Yukiko Hiraiwa , Shoichi Murakami , Mitsuhiro Abe , Kazushige Sasaki , Shigeru Hoshiko , Toshiaki Miyake , Yoshiaki Takahashi , Daishiro Ikeda
IPC分类号： A61K31/7036 , C07H15/234 , A61P31/04
CPC分类号： C07H15/234 , C07H15/224
摘要： This invention relates to novel aminoglycoside antibiotics, which have potent antimicrobial activity against bacteria, which induce infectious diseases, particularly MRSA, and has no significant nephrotoxicity, and process for producing them. More particularly, the present invention relates to compounds represented by formula (Ia) or their pharmacologically acceptable salts or solvates, or their diastereomer mixtures, antimicrobial agents comprising them, and a process for producing them.
摘要翻译：本发明涉及对细菌具有强力抗微生物活性的新型氨基糖苷类抗生素，其诱导感染性疾病，特别是MRSA，并且没有显着的肾毒性，以及生产它们的方法。更具体地，本发明涉及由式（Ia）表示的化合物或其药理学上可接受的盐或溶剂合物或其非对映体混合物，包含它们的抗微生物剂及其制备方法。

17. 发明授权

US4494702A Yarn winding apparatus 失效
标题翻译：纱线缠绕装置
公开(公告)号：US4494702A
公开(公告)日：1985-01-22
申请号：US437523
申请日：1982-10-29
申请人： Yuzuru Miyake , Takami Sugioka , Shoichi Murakami , Hideaki Ibuki
发明人： Yuzuru Miyake , Takami Sugioka , Shoichi Murakami , Hideaki Ibuki
IPC分类号： B65H59/38 , B65H54/02 , B65H54/38
CPC分类号： B65H59/385 , B65H2701/31
摘要： A spindle drive type winding apparatus wherein a spindle onto which a bobbin for winding a yarn thereonto to form a yarn package is inserted is driven so that a predetermined winding factor is controlled in accordance with a predetermined program. The spindle drive type winding apparatus is provided with a control device which comprises:a peripheral speed detector for detecting the peripheral speed of the yarn package and generating a peripheral speed signal;a control for controlling the rotational speed of the spindle and generating a control signal;a circuit for calculating the wound amount of the yarn package based on the peripheral speed signal emitted from the peripheral speed detector and the signal emitted from the control and for generating a radius signal; anda function generator for emitting a programmed winding signal obtained in accordance with a pattern based on theradius signal emitted from the calculating circuit.The winding factor may be a peripheral speed of the yarn package, and in this case the peripheral speed is detected by means of the peripheral speed detector.The winding factor may be tension in wound yarn, and in this case the tension in yarn is detected by means of a tension detector.The winding apparatus may be driven at a constant wind ratio or at a constant wind angle.
摘要翻译：一种主轴驱动式卷绕装置，其中插入有用于将纱线卷绕在其上以形成纱线卷装的筒管的主轴，以便根据预定程序来控制预定的卷绕系数。主轴驱动式卷绕装置设有控制装置，该控制装置包括：圆周速度检测器，用于检测纱线卷装的圆周速度并产生圆周速度信号; 用于控制主轴的转速并产生控制信号的控制; 基于从所述圆周速度检测器发出的圆周速度信号和从所述控制发出的信号计算所述纱线卷绕量的电路，用于产生半径信号; 以及功能发生器，用于根据从计算电路发出的半径信号，发出根据模式获得的编程绕组信号。卷绕系数可以是纱线卷装的圆周速度，在这种情况下，通过圆周速度检测器检测圆周速度。绕线因素可能是缠绕纱线的张力，在这种情况下，通过张力检测器检测纱线中的张力。卷绕装置可以以恒定的风量或恒定的风向被驱动。

18. 发明授权

US4487374A Spindle drive type yarn winding apparatus 失效
标题翻译：主轴驱动式纱线卷绕装置
公开(公告)号：US4487374A
公开(公告)日：1984-12-11
申请号：US437527
申请日：1982-10-29
申请人： Takami Sugioka , Yuzuru Miyake , Shoichi Murakami , Hideaki Ibuki
发明人： Takami Sugioka , Yuzuru Miyake , Shoichi Murakami , Hideaki Ibuki
IPC分类号： B65H54/04 , B65H54/40 , B65H54/44 , B65H67/048 , B65H54/08 , B65H67/04
CPC分类号： B65H54/40 , B65H54/44 , B65H67/048 , B65H2701/31
摘要： A spindle drive type yarn winding apparatus comprises a yarn traverse device and a spindle for inserting a bobbin.The apparatus further comprises:mechanism for adjusting the wind ratio connected to the traverse device or the spindle;a first synchronous motor connected to the traverse device and driving the traverse device;a second synchronous motor connected to the spindle and driving the spindle; anda frequency variable power source capable of connecting to both the first and second motors.The apparatus can wind a yarn at a constant wind ratio.
摘要翻译：主轴驱动型纱线卷绕装置包括纱线横动装置和用于插入筒管的主轴。该装置还包括：用于调节连接到横动装置或主轴的风量的机构; 连接到横动装置并驱动横动装置的第一同步电动机; 连接到主轴并驱动主轴的第二同步电动机; 以及能够连接到第一和第二电动机的频率可变电源。该设备可以以恒定的风比卷绕纱线。

19. 发明授权

US3971517A Apparatus for winding a yarn round a bobbin 失效
标题翻译：用于将纱线卷绕在筒管上的装置
公开(公告)号：US3971517A
公开(公告)日：1976-07-27
申请号：US496514
申请日：1974-08-12
申请人： Yosio Matuura , Shoichi Murakami , Norihisa Yamaguchi , Takashi Kishida , Sadao Kadokura , Kiyoshi Imai
发明人： Yosio Matuura , Shoichi Murakami , Norihisa Yamaguchi , Takashi Kishida , Sadao Kadokura , Kiyoshi Imai
IPC分类号： B65H54/04 , B65H59/38 , B65H67/04 , B65H54/02 , B65H54/32
CPC分类号： B65H54/04 , B65H59/38 , B65H59/384 , B65H67/04 , B65H2701/31
摘要： A guide roller is traversed substantially in parallel to the axis of an uprightly supported bobbin at a speed slow enough not to form appreciable twilled angles of a wound yarn. The yarn continuously extruded from a spinning apparatus at a speed higher than 2000 m/min is introduced substantially in parallel to the axis of the bobbin and changes its direction to right angles with respect to the axis of the bobbin while travelling through the guide roller. The guide roller traverses with shorter traverse strokes as the diameter of the wound yarn becomes larger.
摘要翻译：引导辊以足够慢的速度基本上平行于垂直支撑的筒管的轴线移动，不能形成卷绕的纱线的明显的斜角。以高于2000m / min的速度从纺丝设备连续挤出的纱线基本上平行于筒管的轴线引入，并且在通过导辊行进时相对于筒管的轴线改变成直角。当卷绕的纱线的直径变大时，导辊以较短的横动程移动。

20. 发明授权

US09117660B2 Apparatus, method and program for manufacturing nitride film 有权
标题翻译：用于制造氮化物膜的装置，方法和程序
公开(公告)号：US09117660B2
公开(公告)日：2015-08-25
申请号：US14238289
申请日：2012-05-22
申请人： Shoichi Murakami , Masayasu Hatashita
发明人： Shoichi Murakami , Masayasu Hatashita
IPC分类号： H01L21/02 , C23C16/34 , C23C16/509 , H01L21/66
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/509 , H01L21/0214 , H01L21/02274 , H01L22/12
摘要： A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.
摘要翻译：氮化膜制造装置通过等离子体CVD技术在设置在室中的基板上形成氮化膜。具体而言，氮化膜制造装置包括：控制器，用于计算用于施加具有较高频率的第一高频电力的第一周期和用于施加具有相对较低频率的第二高频功率的第二周期，以获得期望的压缩应力或氮化物膜的拉伸应力，基于氮化物膜的折射率的分布和/或氮化物膜的沉积速率的分布，该分布落在预定数值范围内并且使用第一高频功率获得和/或独立地施加的用于形成氮化物膜的第二高频电力。

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