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11. 发明申请

US20090162784A1 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
标题翻译：聚合物化合物，阳离子组成和电阻形成方法
公开(公告)号：US20090162784A1
公开(公告)日：2009-06-25
申请号：US11576518
申请日：2005-09-22
申请人： Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004 , C08F16/36 , C08F24/00 , G03F7/20
CPC分类号： G03F7/0397 , C08F220/28 , Y10S430/106 , Y10S430/114 , Y10S430/146
摘要： The present invention relates to a polymer compound comprising at least one constituent unit (a0) selected from the group consisting of constituent units represented by the following general formulas (A0-1), (A0-2), (A0-3) and (A0-4) [wherein R represents a hydrogen atom or a lower alkyl group], and a constituent unit (a1) derived from an (a-lower alkyl)acrylate ester having an acid dissociable dissolution inhibiting group.
摘要翻译：本发明涉及包含至少一种选自由以下通式（A0-1），（A0-2），（A0-3）和（A0-3）和（A0-3）表示的结构单元组成的组的组成单元（a0） A0-4）[其中R表示氢原子或低级烷基]，以及由具有酸解离溶解抑制基团的（α-低级烷基）丙烯酸酯衍生的构成单元（a1）。

12. 发明授权

US07943284B2 Compound, dissolution inhibitor, positive type resist composition, and method of forming resist pattern 失效
标题翻译：化合物，溶解抑制剂，正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07943284B2
公开(公告)日：2011-05-17
申请号：US11911341
申请日：2006-04-17
申请人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , C07J9/00 , G03F7/0045 , Y10S430/106
摘要： A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.
摘要翻译：提供了用于形成高分辨抗蚀剂图案的正型抗蚀剂组合物和形成抗蚀剂图案的方法，其使用低分子量材料作为基础组分，并且化合物和溶解抑制剂各自适用于阳性型抗蚀剂组合物。这里，该化合物是分子量为500〜3000的非聚合物，在酸的作用下分解，生成分子量为200以上的分解产物的2个以上分子; 该溶解抑制剂包含该化合物; 正型抗蚀剂组合物包含化合物和酸产生剂组分; 并且形成抗蚀剂图案的方法使用正型抗蚀剂组合物。

13. 发明授权

US07851127B2 Polymer compound, positive resist composition and resist pattern forming method 有权
标题翻译：高分子化合物，正性抗蚀剂组合物和抗蚀剂图案形成方法
公开(公告)号：US07851127B2
公开(公告)日：2010-12-14
申请号：US11576518
申请日：2005-09-22
申请人： Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0397 , C08F220/28 , Y10S430/106 , Y10S430/114 , Y10S430/146
摘要： The present invention relates to a polymer compound comprising at least one constituent unit (a0) selected from the group consisting of constituent units represented by the following general formulas (A0-1), (A0-2), (A0-3) and (A0-4) [wherein R represents a hydrogen atom or a lower alkyl group], and a constituent unit (a1) derived from an (a-lower alkyl)acrylate ester having an acid dissociable dissolution inhibiting group.
摘要翻译：本发明涉及包含至少一种选自由以下通式（A0-1），（A0-2），（A0-3）和（A0-3）和（A0-3）表示的结构单元组成的组的组成单元（a0） A0-4）[其中R表示氢原子或低级烷基]，以及由具有酸解离溶解抑制基团的（α-低级烷基）丙烯酸酯衍生的构成单元（a1）。

14. 发明申请

US20090081580A1 COMPOUND, DISSOLUTION INHIBITOR, POSITIVE TYPE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN 失效
标题翻译：化合物，溶解抑制剂，积极类型抗蚀剂组合物和形成耐药性图案的方法
公开(公告)号：US20090081580A1
公开(公告)日：2009-03-26
申请号：US11911341
申请日：2006-04-17
申请人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004 , C07C69/74 , G03F7/20 , C07C69/76
CPC分类号： G03F7/0392 , C07J9/00 , G03F7/0045 , Y10S430/106
摘要： A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.
摘要翻译：提供了用于形成高分辨抗蚀剂图案的正型抗蚀剂组合物和形成抗蚀剂图案的方法，其使用低分子量材料作为基础组分，并且化合物和溶解抑制剂各自适用于阳性型抗蚀剂组合物。这里，该化合物是分子量为500〜3000的非聚合物，在酸的作用下分解，生成分子量为200以上的分解产物的2个以上分子; 该溶解抑制剂包含该化合物; 正型抗蚀剂组合物包含化合物和酸产生剂组分; 并且形成抗蚀剂图案的方法使用正型抗蚀剂组合物。

15. 发明授权

US08304163B2 Compound, dissolution inhibitor, positive type resist composition, and method of forming resist pattern 失效
标题翻译：化合物，溶解抑制剂，正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08304163B2
公开(公告)日：2012-11-06
申请号：US12980914
申请日：2010-12-29
申请人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004
CPC分类号： G03F7/0392 , C07J9/00 , G03F7/0045 , Y10S430/106
摘要： A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.
摘要翻译：提供了用于形成高分辨抗蚀剂图案的正型抗蚀剂组合物和形成抗蚀剂图案的方法，其使用低分子量材料作为基础组分，并且化合物和溶解抑制剂各自适用于阳性型抗蚀剂组合物。这里，该化合物是分子量为500〜3000的非聚合物，在酸的作用下分解，生成分子量为200以上的分解产物的2个以上分子; 该溶解抑制剂包含该化合物; 正型抗蚀剂组合物包含化合物和酸产生剂组分; 并且形成抗蚀剂图案的方法使用正型抗蚀剂组合物。

16. 发明授权

US07829259B2 Resin for photoresist composition, photoresist composition and method for forming resist pattern 有权
标题翻译：用于光致抗蚀剂组合物的树脂，光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07829259B2
公开(公告)日：2010-11-09
申请号：US12365752
申请日：2009-02-04
申请人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
发明人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
IPC分类号： G03F7/039 , G03F7/028 , C08F2/38
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/109 , Y10S430/115
摘要： A resin for photoresist compositions is disclosed with excellent resolution and line edge roughness characteristics. A photoresist composition and a method for forming a resist pattern using such a resin are also disclosed. The resin has a hydroxyl group bonded to a carbon atom at a polymer terminal, and the carbon atom in the α-position to the hydroxyl group has at least one electron attractive group.
摘要翻译：公开了用于光致抗蚀剂组合物的树脂，其具有优异的分辨率和线边缘粗糙度特性。还公开了光致抗蚀剂组合物和使用这种树脂形成抗蚀剂图案的方法。该树脂在聚合物末端具有与碳原子键合的羟基，并且与羟基的α-位上的碳原子具有至少一个吸电子基团。

17. 发明申请

US20090142700A1 RESIN FOR PHOTORESIST COMPOSITION, PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：光电组合物树脂，光电组合物和形成电阻图案的方法
公开(公告)号：US20090142700A1
公开(公告)日：2009-06-04
申请号：US12365752
申请日：2009-02-04
申请人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
发明人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
IPC分类号： G03F7/20 , C08G63/00 , C08G63/688 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/109 , Y10S430/115
摘要： A resin for photoresist compositions is disclosed with excellent resolution and line edge roughness characteristics. A photoresist composition and a method for forming a resist pattern using such a resin are also disclosed. The resin has a hydroxyl group bonded to a carbon atom at a polymer terminal, and the carbon atom in the α-position to the hydroxyl group has at least one electron attractive group.
摘要翻译：公开了用于光致抗蚀剂组合物的树脂，其具有优异的分辨率和线边缘粗糙度特性。还公开了光致抗蚀剂组合物和使用这种树脂形成抗蚀剂图案的方法。该树脂在聚合物末端具有与碳原子键合的羟基，并且与羟基的α-位上的碳原子具有至少一个吸电子基团。

18. 发明授权

US07482108B2 Polymer compound, acid generator, positive resist composition, and method for formation of resist patterns 失效
标题翻译：高分子化合物，酸发生剂，正性抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07482108B2
公开(公告)日：2009-01-27
申请号：US11572990
申请日：2005-07-01
申请人： Shogo Matsumaru , Masaru Takeshita , Takeshi Iwai , Hideo Hada
发明人： Shogo Matsumaru , Masaru Takeshita , Takeshi Iwai , Hideo Hada
IPC分类号： G30F7/00 , G30F7/004
CPC分类号： G03F7/0045 , C08F220/18 , C08F220/28 , C08F220/38 , G03F7/0397 , Y10S430/106 , Y10S430/114
摘要： The invention provides a polymer compound capable of forming a positive resist composition that can form a high-resolution pattern with a reduced level of LER, an acid generator formed from such a polymer compound, a positive resist composition that includes such a polymer compound, and a method for forming a resist pattern that uses such a positive resist composition. The polymer compound includes a structural unit (a1) derived from an (α-lower alkyl) acrylate ester having an acid-dissociable, dissolution-inhibiting group, a structural unit (a2) represented by a general formula (a2-1) shown below [wherein, R represents a hydrogen atom or a lower alkyl group; A represents a divalent organic group; B represents a monovalent organic group; X represents a sulfur atom or iodine atom; n represents either 1 or 2; and Y represents a straight-chain, branched or cyclic alkyl group in which at least one hydrogen atom may be substituted with a fluorine atom], and a structural unit (a3) derived from an (α-lower alkyl) acrylate ester that contains a polar group-containing aliphatic polycyclic group.
摘要翻译：本发明提供一种能够形成正性抗蚀剂组合物的高分子化合物，其可以形成具有降低的LER水平的高分辨率图案，由这种高分子化合物形成的酸发生剂，包含这种高分子化合物的正性抗蚀剂组合物和形成使用这种正性抗蚀剂组合物的抗蚀剂图案的方法。高分子化合物包括衍生自具有酸解离性，溶解抑制基团的（α-低级烷基）丙烯酸酯的结构单元（a1），由以下所示的通式（a2-1）表示的结构单元（a2） [式中，R表示氢原子或低级烷基; A表示二价有机基团; B表示一价有机基团; X表示硫原子或碘原子; n表示1或2; 和Y表示其中至少一个氢原子可被氟原子取代的直链，支链或环状烷基]和衍生自（α-低级烷基）丙烯酸酯的结构单元（a3），其包含含极性基团的脂族多环基团。

19. 发明申请

US20070065748A1 Resin for photoresist composition, photoresist composition and method for forming resist pattern 有权
标题翻译：用于光致抗蚀剂组合物的树脂，光致抗蚀剂组合物和形成抗蚀剂图
公开(公告)号：US20070065748A1
公开(公告)日：2007-03-22
申请号：US10557694
申请日：2003-06-02
申请人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
发明人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/109 , Y10S430/115
摘要： A resin for photoresist compositions is disclosed with excellent resolution and line edge roughness characteristics. A photoresist composition and a method for forming a resist pattern using such a resin are also disclosed. The resin has a hydroxyl group bonded to a carbon atom at a polymer terminal, and the carbon atom in the α-position to the hydroxyl group has at least one electron attractive group.
摘要翻译：公开了用于光致抗蚀剂组合物的树脂，其具有优异的分辨率和线边缘粗糙度特性。还公开了光致抗蚀剂组合物和使用这种树脂形成抗蚀剂图案的方法。该树脂在聚合物末端具有与碳原子键合的羟基，并且与羟基的α-位上的碳原子具有至少一个吸电子基团。

20. 发明授权

US07592123B2 Resin for photoresist composition, photoresist composition and method for forming resist pattern 有权
标题翻译：用于光致抗蚀剂组合物的树脂，光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07592123B2
公开(公告)日：2009-09-22
申请号：US10557694
申请日：2004-06-02
申请人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
发明人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
IPC分类号： G03F7/039 , G03F7/028 , C08F2/38
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/109 , Y10S430/115
摘要： A resin for photoresist compositions is disclosed with excellent resolution and line edge roughness characteristics. A photoresist composition and a method for forming a resist pattern using such a resin are also disclosed. The resin has a hydroxyl group bonded to a carbon atom at a polymer terminal, and the carbon atom in the α-position to the hydroxyl group has at least one electron attractive group.
摘要翻译：公开了用于光致抗蚀剂组合物的树脂，其具有优异的分辨率和线边缘粗糙度特性。还公开了光致抗蚀剂组合物和使用这种树脂形成抗蚀剂图案的方法。该树脂在聚合物末端具有与碳原子键合的羟基，并且与羟基的α-位上的碳原子具有至少一个吸电子基团。

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