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    • 12. 发明授权
    • Spread spectrum communication system capable of detecting occupying
state of channel by off-communication terminal
    • 扩频通信系统能够通过非通信终端检测信道的占用状态
    • US5572514A
    • 1996-11-05
    • US268832
    • 1994-06-29
    • Masayasu Miyake
    • Masayasu Miyake
    • H04J13/00H04J13/04
    • H04J13/00
    • Assuming that 4-system communication with signals A, B, C and D is executed for each frame and one period consists of four frames for the signals A, B, C and D, and signals AS, BS, CS and DS, modulated with spread codes representing the systems to which the signals belong are inserted, a terminal which is about to start communication sequentially tunes the reception frequency to frequencies 1, 2 and 3, detects the signals AS, BS, CS and DS, modulated with the common spread codes, from the received signals per frame over more than one period, acquires the signal levels then, determines from the results of those sequential processes how many spread spectrum signals occupy each frame, and selects the optimal frequency channel that has the least radio interference. It is therefore possible to detect the occupying state of a communication channel and prevent communication from being disabled by an interference signal.
    • 假设与每个帧执行与信号A,B,C和D的4系统通信,一个周期由信号A,B,C和D的四个帧组成,信号AS,BS,CS和DS由 代表信号所属的系统的扩展码被插入,即将开始通信的终端顺序地将接收频率调谐到频率1,2和3,检测用公共传播调制的信号AS,BS,CS和DS 代码从超过一个周期的每帧接收到的信号中获取信号电平,然后从这些顺序处理的结果中确定多少个扩展频谱信号占据每个帧,并且选择具有最小无线电干扰的最佳频道。 因此,可以检测通信信道的占用状态,防止通信被干扰信号禁止。
    • 14. 发明授权
    • Method for fabricating CMOS semiconductor devices
    • 制造CMOS半导体器件的方法
    • US5382532A
    • 1995-01-17
    • US946080
    • 1992-09-16
    • Toshio KobayashiYukio OkazakiMasayasu MiyakeHiroshi InokawaTakashi Morimoto
    • Toshio KobayashiYukio OkazakiMasayasu MiyakeHiroshi InokawaTakashi Morimoto
    • H01L27/092H01L21/8238H01L29/02H01L29/78H01L21/265
    • H01L21/823842
    • A method for fabricating semiconductor devices wherein polysilicon gates for complementary-type field-effect semiconductor devices are formed of polysilicon to which impurity doped simultaneously to the polysilicon deposition; the both gates having the dual N.sup.+ /P.sup.+ polysilicon gate structure, so that the both N- and P-channel transistors are formed as the surface-channel type ones; and therefore, the off-characteristic, the short channel effect, and the controllability of threshold voltage are progressed. More specifically, N- and P-channel MISFETs are provided on a common semiconductor substrate (1); N-type polysilicon (9) doped with N-type impurity is adopted as the gate electrode for the N-channel MISFET; P-type polysilicon (8) doped with P-type impurity is adopted as the gate electrode for the P-channel MISFET; and a narrow region preventing the mutual diffusion of impurities is provided between portions of respective polysilicon.
    • 一种用于制造半导体器件的方法,其中用于互补型场效应半导体器件的多晶硅栅极由同时掺杂到多晶硅沉积的杂质的多晶硅形成; 两个门具有双N + / P +多晶硅栅极结构,使得N沟道晶体管和P沟道晶体管形成为表面沟道​​型晶体管; 因此,进行关闭特性,短通道效应和阈值电压的可控性。 更具体地,在公共半导体衬底(1)上提供N沟道和P沟道MISFET。 采用N型杂质掺杂的N型多晶硅(9)作为N沟道MISFET的栅电极; 采用掺杂有P型杂质的P型多晶硅(8)作为P沟道MISFET的栅电极; 并且在各个多晶硅的部分之间设置防止杂质相互扩散的窄区域。