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    • 11. 发明授权
    • Structure and method for semiconductor power devices
    • 半导体功率器件的结构和方法
    • US08541840B2
    • 2013-09-24
    • US13028054
    • 2011-02-15
    • James Pan
    • James Pan
    • H01L27/12
    • H01L27/1203H01L21/743H01L21/8249H01L21/84H01L27/0623H01L27/0635H01L29/1087H01L29/4175H01L29/78624
    • A semiconductor device includes a semiconductor-on-insulator region on a substrate. The semiconductor-on-insulator region includes a first semiconductor region overlying a dielectric region. The device includes an MOS transistor and a bipolar transistor. The MOS transistor has a drain region, a body region, and a source region in the first semiconductor region. The MOS transistor also includes a gate. The device also includes a second semiconductor region overlying the substrate and adjacent to the drain region, and a third semiconductor region overlying the substrate and adjacent to the second semiconductor region. The bipolar transistor includes has the drain region of the MOS transistor as an emitter, the second semiconductor region as a base, and the third semiconductor region as a collector. Accordingly, the drain of the MOS transistor also functions as the emitter of the bipolar transistor. Additionally, the gate and the base are coupled by a resistive element.
    • 半导体器件包括在衬底上的绝缘体上半导体区域。 绝缘体上半导体区域包括覆盖电介质区域的第一半导体区域。 该器件包括MOS晶体管和双极晶体管。 MOS晶体管在第一半导体区域中具有漏极区域,体区域和源极区域。 MOS晶体管还包括一个栅极。 该器件还包括覆盖衬底并且与漏极区相邻的第二半导体区域,以及覆盖衬底并与第二半导体区域相邻的第三半导体区域。 双极晶体管包括MOS晶体管的漏极区域作为发射极,第二半导体区域作为基极,第三半导体区域作为集电极。 因此,MOS晶体管的漏极也用作双极晶体管的发射极。 此外,栅极和基极通过电阻元件耦合。
    • 13. 发明申请
    • Novel Very Fast Optic Nonvolatile Memory with Alternative Carrier Lifetimes and Bandgap Energies, Optic Random Access, and Mirrored
    • 具有替代载波寿命和带隙能量的新型非常快速的非易失性存储器,光学随机存取和镜像“反馈”配置
    • US20120292676A1
    • 2012-11-22
    • US13113048
    • 2011-05-21
    • James Pan
    • James Pan
    • H01L31/113
    • G11C13/047
    • The present invention is for a fast optic nonvolatile memory cell (FONM) that operates with a speed >1000000 times faster than the commercially available FLASH memory. The information (or charges) can be entered into the FONM cell by switching on a built-in laser or LED (Light Emitting Diode). Excited by the lights, and driven by electric fields, the regions of low carrier lifetimes thermally generate excess electrons or positive charges to fill the storage gaps or interfaces. To detect the stored information, two BJTs (Bipolar Junction Transistors) are arranged in a mirrored configuration—with alternative regions of high or low carrier lifetimes and bandgap energies. By comparing the BJT “fly-back” characteristics a voltage difference can be detected as a signal of whether the information is stored or not stored.
    • 本发明用于快速光学非易失性存储单元(FONM),其以比市售的闪速存储器快1000000倍的速度运行。 通过打开内置激光或LED(发光二极管)可以将信息(或电荷)输入到FONM单元。 由光激发,由电场驱动,低载流子寿命的区域会产生过量的电子或正电荷,以填充储存间隙或界面。 为了检测存储的信息,两个BJT(双极结晶体管)被布置成镜像配置 - 具有高或低载波寿命和带隙能量的替代区域。 通过比较BJT回扫特性,可以检测电压差是否存储信息或不存储信息。