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11. 发明申请

US20100144151A1 Methods of Fabricating Substrates 有权
标题翻译：制造基板的方法
公开(公告)号：US20100144151A1
公开(公告)日：2010-06-10
申请号：US12328448
申请日：2008-12-04
申请人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
发明人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
IPC分类号： H01L21/311
CPC分类号： H01L21/3088 , G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/31138
摘要： A method of fabricating a substrate includes forming spaced first features over a substrate. An alterable material is deposited over the spaced first features and the alterable material is altered with material from the spaced first features to form altered material on sidewalls of the spaced first features. A first material is deposited over the altered material, and is of some different composition from that of the altered material. The first material is etched to expose the altered material and spaced second features comprising the first material are formed on sidewalls of the altered material. Then, the altered material is etched from between the spaced second features and the spaced first features. The substrate is processed through a mask pattern comprising the spaced first features and the spaced second features. Other embodiments are disclosed.
摘要翻译：一种制造衬底的方法包括在衬底上形成间隔开的第一特征。可更换的材料沉积在间隔开的第一特征上，并且可变材料用来自间隔开的第一特征的材料改变，以在间隔开的第一特征的侧壁上形成改变的材料。第一种材料沉积在改变的材料上，并且与改变的材料的组成不同。蚀刻第一材料以暴露改变的材料并且包含第一材料的间隔开的第二特征形成在改变的材料的侧壁上。然后，从间隔开的第二特征和间隔开的第一特征之间蚀刻改变的材料。通过包括间隔开的第一特征和间隔开的第二特征的掩模图案处理基板。公开了其他实施例。

12. 发明授权

US08703570B2 Methods of fabricating substrates 有权
标题翻译：制造基板的方法
公开(公告)号：US08703570B2
公开(公告)日：2014-04-22
申请号：US13561424
申请日：2012-07-30
申请人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
发明人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/31138 , G03F7/0035 , H01L21/0273 , H01L21/0337 , H01L21/0338
摘要： A method of fabricating a substrate includes forming spaced first features and spaced second features over a substrate. The first and second features alternate with one another and are spaced relative one another. Width of the spaced second features is laterally trimmed to a greater degree than any lateral trimming of width of the spaced first features while laterally trimming width of the spaced second features. After laterally trimming of the second features, spacers are formed on sidewalls of the spaced first features and on sidewalls of the spaced second features. The spacers are of some different composition from that of the spaced first features and from that of the spaced second features. After forming the spacers, the spaced first features and the spaced second features are removed from the substrate. The substrate is processed through a mask pattern comprising the spacers. Other embodiments are disclosed.
摘要翻译：一种制造衬底的方法包括在衬底上形成间隔开的第一特征和间隔开的第二特征。第一和第二特征彼此交替并彼此间隔开。间隔开的第二特征的宽度被横向修剪到比间隔开的第一特征的宽度的任何横向修剪更大的程度，同时横向修剪间隔开的第二特征的宽度。在第二特征的横向修剪之后，间隔物形成在间隔开的第一特征的侧壁上并且在间隔开的第二特征的侧壁上。间隔物与间隔开的第一特征和间隔开的第二特征的间隔物具有不同的组成。在形成间隔物之后，从衬底移除间隔开的第一特征和间隔开的第二特征。通过包括间隔物的掩模图案处理衬底。公开了其他实施例。

13. 发明授权

US08563228B2 Methods of forming patterns on substrates 有权
标题翻译：在基材上形成图案的方法
公开(公告)号：US08563228B2
公开(公告)日：2013-10-22
申请号：US13483339
申请日：2012-05-30
申请人： Scott Sills , Gurtej S. Sandhu
发明人： Scott Sills , Gurtej S. Sandhu
IPC分类号： G03F7/26
CPC分类号： G03F7/0035
摘要： A method of forming a pattern on a substrate includes forming spaced first features over a substrate. The spaced first features have opposing lateral sidewalls. Material is formed onto the opposing lateral sidewalls of the spaced first features. That portion of such material which is received against each of the opposing lateral sidewalls is of different composition from composition of each of the opposing lateral sidewalls. At least one of such portion of the material and the spaced first features is densified to move the at least one laterally away from the other of the at least one to form a void space between each of the opposing lateral sidewalls and such portion of the material.
摘要翻译：在衬底上形成图案的方法包括在衬底上形成间隔开的第一特征。间隔开的第一特征具有相对的侧向侧壁。材料形成在间隔开的第一特征的相对的侧向侧壁上。抵靠每个相对的侧向侧壁的这种材料的该部分的组成与每个相对的侧向侧壁的组成不同。材料的这种部分和间隔开的第一特征中的至少一个被致密化以使所述至少一个横向移动远离另一个至少一个，以在每个相对的侧向侧壁和材料的这一部分之间形成空隙空间。

14. 发明授权

US08530939B2 Cross-point memory structures 有权
标题翻译：交叉点记忆结构
公开(公告)号：US08530939B2
公开(公告)日：2013-09-10
申请号：US13484944
申请日：2012-05-31
申请人： Scott Sills , Gurtej S. Sandhu
发明人： Scott Sills , Gurtej S. Sandhu
IPC分类号： H01L23/52 , H01L21/82
CPC分类号： H01L27/2418 , H01L27/2463
摘要： Some embodiments include cross-point memory structures. The structures may include a line of first electrode material extending along a first horizontal direction, a multi-sided container of access device materials over the first electrode material, a memory element material within the multi-sided container, and a line of second electrode material over the memory element material and extending along a second horizontal direction that is orthogonal to the first horizontal direction. Some embodiments include methods of forming memory arrays. The methods may include forming a memory cell stack over a first electrode material, and then patterning the first electrode material and the memory cell stack into a first set of spaced lines extending along a first horizontal direction. Spaced lines of second electrode material may be formed over the first set of spaced lines, and may extend along a second horizontal direction that is orthogonal to the first horizontal direction.
摘要翻译：一些实施例包括交叉点存储器结构。结构可以包括沿着第一水平方向延伸的第一电极材料线，在第一电极材料上方的进入装置材料的多边容器，多侧容器内的存储元件材料和第二电极材料线并且沿着与第一水平方向正交的第二水平方向延伸。一些实施例包括形成存储器阵列的方法。所述方法可以包括在第一电极材料上形成存储单元堆叠，然后将第一电极材料和存储单元堆叠图案化成沿着第一水平方向延伸的第一组间隔开的线。第二电极材料的间隔线可以形成在第一组间隔线上，并且可以沿着与第一水平方向正交的第二水平方向延伸。

15. 发明申请

US20120295445A1 Methods of Fabricating Substrates 有权
标题翻译：制造基板的方法
公开(公告)号：US20120295445A1
公开(公告)日：2012-11-22
申请号：US13561424
申请日：2012-07-30
申请人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
发明人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
IPC分类号： H01L21/3105
CPC分类号： H01L21/31138 , G03F7/0035 , H01L21/0273 , H01L21/0337 , H01L21/0338
摘要： A method of fabricating a substrate includes forming spaced first features and spaced second features over a substrate. The first and second features alternate with one another and are spaced relative one another. Width of the spaced second features is laterally trimmed to a greater degree than any lateral trimming of width of the spaced first features while laterally trimming width of the spaced second features. After laterally trimming of the second features, spacers are formed on sidewalls of the spaced first features and on sidewalls of the spaced second features. The spacers are of some different composition from that of the spaced first features and from that of the spaced second features. After forming the spacers, the spaced first features and the spaced second features are removed from the substrate. The substrate is processed through a mask pattern comprising the spacers. Other embodiments are disclosed.
摘要翻译：一种制造衬底的方法包括在衬底上形成间隔开的第一特征和间隔开的第二特征。第一和第二特征彼此交替并彼此间隔开。间隔开的第二特征的宽度被横向修剪到比间隔开的第一特征的宽度的任何横向修剪更大的程度，同时横向修剪间隔开的第二特征的宽度。在第二特征的横向修剪之后，间隔物形成在间隔开的第一特征的侧壁上并且在间隔开的第二特征的侧壁上。间隔物与间隔开的第一特征和间隔开的第二特征的间隔物具有不同的组成。在形成间隔物之后，从衬底移除间隔开的第一特征和间隔开的第二特征。通过包括间隔物的掩模图案处理衬底。公开了其他实施例。

16. 发明申请

US20110298014A1 Cross-Point Memory Structures 有权
标题翻译：交叉点内存结构
公开(公告)号：US20110298014A1
公开(公告)日：2011-12-08
申请号：US13213718
申请日：2011-08-19
申请人： Scott Sills , Gurtej S. Sandhu
发明人： Scott Sills , Gurtej S. Sandhu
IPC分类号： H01L27/105
CPC分类号： H01L27/2418 , H01L27/2463
摘要： Some embodiments include cross-point memory structures. The structures may include a line of first electrode material extending along a first horizontal direction, a multi-sided container of access device materials over the first electrode material, a memory element material within the multi-sided container, and a line of second electrode material over the memory element material and extending along a second horizontal direction that is orthogonal to the first horizontal direction. Some embodiments include methods of forming memory arrays. The methods may include forming a memory cell stack over a first electrode material, and then patterning the first electrode material and the memory cell stack into a first set of spaced lines extending along a first horizontal direction. Spaced lines of second electrode material may be formed over the first set of spaced lines, and may extend along a second horizontal direction that is orthogonal to the first horizontal direction.
摘要翻译：一些实施例包括交叉点存储器结构。结构可以包括沿着第一水平方向延伸的第一电极材料线，在第一电极材料上方的进入装置材料的多边容器，多侧容器内的存储元件材料和第二电极材料线并且沿着与第一水平方向正交的第二水平方向延伸。一些实施例包括形成存储器阵列的方法。所述方法可以包括在第一电极材料上形成存储单元堆叠，然后将第一电极材料和存储单元堆叠图案化成沿着第一水平方向延伸的第一组间隔开的线。第二电极材料的间隔线可以形成在第一组间隔线上，并且可以沿着与第一水平方向正交的第二水平方向延伸。

17. 发明授权

US08796155B2 Methods of fabricating substrates 有权
标题翻译：制造基板的方法
公开(公告)号：US08796155B2
公开(公告)日：2014-08-05
申请号：US12328448
申请日：2008-12-04
申请人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
发明人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
IPC分类号： H01L21/302
CPC分类号： H01L21/3088 , G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/31138
摘要： A method of fabricating a substrate includes forming spaced first features over a substrate. An alterable material is deposited over the spaced first features and the alterable material is altered with material from the spaced first features to form altered material on sidewalls of the spaced first features. A first material is deposited over the altered material, and is of some different composition from that of the altered material. The first material is etched to expose the altered material and spaced second features comprising the first material are formed on sidewalls of the altered material. Then, the altered material is etched from between the spaced second features and the spaced first features. The substrate is processed through a mask pattern comprising the spaced first features and the spaced second features. Other embodiments are disclosed.
摘要翻译：一种制造衬底的方法包括在衬底上形成间隔开的第一特征。可更换的材料沉积在间隔开的第一特征上，并且可变材料用来自间隔开的第一特征的材料改变，以在间隔开的第一特征的侧壁上形成改变的材料。第一种材料沉积在改变的材料上，并且与改变的材料的组成不同。蚀刻第一材料以暴露改变的材料并且包含第一材料的间隔开的第二特征形成在改变的材料的侧壁上。然后，从间隔开的第二特征和间隔开的第一特征之间蚀刻改变的材料。通过包括间隔开的第一特征和间隔开的第二特征的掩模图案处理基板。公开了其他实施例。

18. 发明申请

US20120237880A1 Methods of Forming Patterns on Substrates 有权
标题翻译：在基板上形成图案的方法
公开(公告)号：US20120237880A1
公开(公告)日：2012-09-20
申请号：US13483339
申请日：2012-05-30
申请人： Scott Sills , Gurtej S. Sandhu
发明人： Scott Sills , Gurtej S. Sandhu
IPC分类号： G03F7/20
CPC分类号： G03F7/0035
摘要： A method of forming a pattern on a substrate includes forming spaced first features over a substrate. The spaced first features have opposing lateral sidewalls. Material is formed onto the opposing lateral sidewalls of the spaced first features. That portion of such material which is received against each of the opposing lateral sidewalls is of different composition from composition of each of the opposing lateral sidewalls. At least one of such portion of the material and the spaced first features is densified to move the at least one laterally away from the other of the at least one to form a void space between each of the opposing lateral sidewalls and such portion of the material.
摘要翻译：在衬底上形成图案的方法包括在衬底上形成间隔开的第一特征。间隔开的第一特征具有相对的侧向侧壁。材料形成在间隔开的第一特征的相对的侧向侧壁上。抵靠每个相对的侧向侧壁的这种材料的该部分的组成与每个相对的侧向侧壁的组成不同。材料的这种部分和间隔开的第一特征中的至少一个被致密化以使所述至少一个横向移动远离另一个至少一个，以在每个相对的侧向侧壁和材料的这一部分之间形成空隙空间。

19. 发明申请

US20100093175A1 Methods Of Forming Patterns Utilizing Lithography And Spacers 有权
标题翻译：使用平版印刷和间隔的形成图案的方法
公开(公告)号：US20100093175A1
公开(公告)日：2010-04-15
申请号：US12248283
申请日：2008-10-09
申请人： Ardavan Niroomand , Gurtej S. Sandhu , Mark Kiehlbauch , Scott Sills
发明人： Ardavan Niroomand , Gurtej S. Sandhu , Mark Kiehlbauch , Scott Sills
IPC分类号： H01L21/311
CPC分类号： H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L27/115
摘要： Some embodiments include methods of forming patterns. A first set of features is photolithographically formed over a substrate, and then a second set of features is photolithographically formed over the substrate. At least some of the features of said second set alternate with features of the first set. Spacer material is formed over and between the features of the first and second sets. The spacer material is anisotropically etched to form spacers along the features of the first and second sets. The features of the first and second sets are then removed to leave a pattern of the spacers over the substrate.
摘要翻译：一些实施例包括形成图案的方法。第一组特征被光刻地形成在衬底上，然后在衬底上光刻地形成第二组特征。所述第二组的至少一些特征与第一组的特征交替。间隔材料形成在第一和第二组的特征之上和之间。间隔材料被各向异性地蚀刻以沿着第一和第二组的特征形成间隔物。然后去除第一组和第二组的特征以在衬底上留下间隔物的图案。

20. 发明授权

US08603884B2 Methods of fabricating substrates 有权
标题翻译：制造基板的方法
公开(公告)号：US08603884B2
公开(公告)日：2013-12-10
申请号：US13596430
申请日：2012-08-28
申请人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
发明人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/0337 , H01L21/0338
摘要： A method of fabricating a substrate includes forming first and second spaced features over a substrate. The first spaced features have elevationally outermost regions which are different in composition from elevationally outermost regions of the second spaced features. The first and second spaced features alternate with one another. Every other first feature is removed from the substrate and pairs of immediately adjacent second features are formed which alternate with individual of remaining of the first features. After such act of removing, the substrate is processed through a mask pattern comprising the pairs of immediately adjacent second features which alternate with individual of the remaining of the first features. Other embodiments are disclosed.
摘要翻译：制造衬底的方法包括在衬底上形成第一和第二间隔的特征。第一间隔的特征具有与第二间隔特征的垂直最外区域不同的高度最外的区域。第一和第二间隔的特征彼此交替。每个其他第一特征从衬底移除，并且形成直接相邻的第二特征对，其与第一特征的剩余部分的个体交替。在这样的去除动作之后，通过掩模图案来处理衬底，该掩模图案包括与第一特征剩余部分的个体交替的紧邻的第二特征对。公开了其他实施例。

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