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    • 17. 发明申请
    • LIGHT OR RADIATION DETECTOR MANUFACTURING METHOD
    • 光或辐射检测器制造方法
    • US20100029037A1
    • 2010-02-04
    • US12441312
    • 2007-04-12
    • Satoshi TokudaTamotsu Okamoto
    • Satoshi TokudaTamotsu Okamoto
    • H01L31/0368
    • H01L27/14683G01T1/24H01L27/14634H01L31/1892Y02E10/50
    • In a light or radiation detector manufacturing method and a light or radiation detector of this invention, when forming a semiconductor, the semiconductor is formed in a predetermined thickness on a dummy substrate by vapor deposition, subsequently the dummy substrate is replaced with a graphite substrate which is a supporting substrate, and the semiconductor continues to be formed on the graphite substrate by vapor deposition. The time when forming the semiconductor in the predetermined thickness on the dummy substrate by vapor deposition is an initial state, and a defective film inevitably to be formed is formed on the dummy substrate. Subsequently, a semiconductor not in the initial state is formed on the graphite substrate put as replacement. This realizes a detector having the semiconductor of higher quality than in the prior art. The semiconductor manufactured in this way is formed continuously at least in a direction of thickness.
    • 在本发明的光或辐射检测器制造方法和光或辐射检测器中,当形成半导体时,半导体通过气相沉积在虚设基板上形成为预定的厚度,随后将虚拟基板替换为石墨基板 是支撑衬底,并且半导体通过气相沉积继续在石墨衬底上形成。 通过气相沉积在虚设基板上形成预定厚度的半导体的时间是初始状态,并且在虚设基板上形成不可避免地形成的缺陷膜。 随后,在作为替换的石墨基板上形成不处于初始状态的半导体。 这实现了具有比现有技术更高质量的半导体的检测器。 以这种方式制造的半导体至少在厚度方向上连续地形成。
    • 18. 发明授权
    • Light or radiation detector manufacturing method
    • 光或辐射探测器的制造方法
    • US07736941B2
    • 2010-06-15
    • US12441312
    • 2007-04-12
    • Satoshi TokudaTamotsu Okamoto
    • Satoshi TokudaTamotsu Okamoto
    • H01L21/20
    • H01L27/14683G01T1/24H01L27/14634H01L31/1892Y02E10/50
    • In a light or radiation detector manufacturing method and a light or radiation detector of this invention, when forming a semiconductor, the semiconductor is formed in a predetermined thickness on a dummy substrate by vapor deposition, subsequently the dummy substrate is replaced with a graphite substrate which is a supporting substrate, and the semiconductor continues to be formed on the graphite substrate by vapor deposition. The time when forming the semiconductor in the predetermined thickness on the dummy substrate by vapor deposition is an initial state, and a defective film inevitably to be formed is formed on the dummy substrate. Subsequently, a semiconductor not in the initial state is formed on the graphite substrate put as replacement. This realizes a detector having the semiconductor of higher quality than in the prior art. The semiconductor manufactured in this way is formed continuously at least in a direction of thickness.
    • 在本发明的光或辐射检测器制造方法和光或辐射检测器中,当形成半导体时,通过气相沉积在半导体基板上以预定的厚度形成半导体,然后用虚拟基板代替石墨基板 是支撑衬底,并且半导体通过气相沉积继续在石墨衬底上形成。 通过气相沉积在虚设基板上形成预定厚度的半导体的时间是初始状态,并且在虚设基板上形成不可避免地形成的缺陷膜。 随后,在作为替换的石墨基板上形成不处于初始状态的半导体。 这实现了具有比现有技术更高质量的半导体的检测器。 以这种方式制造的半导体至少在厚度方向上连续地形成。