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    • 16. 发明申请
    • THIN-FILM TRANSISTOR AND INTERMEDIATE OF THIN-FILM TRANSISTOR
    • 薄膜晶体管和薄膜晶体管的中间体
    • US20110133190A1
    • 2011-06-09
    • US12737797
    • 2009-09-24
    • Satoru MoriShozo Komiyami
    • Satoru MoriShozo Komiyami
    • H01L29/786
    • H01L29/458H01L29/66765H01L29/78621
    • This thin-film transistor according to an aspect of the present invention includes a drain electrode film and a source electrode film, each of which includes a composite copper alloy film including a copper alloy underlayer containing an oxygen-calcium concentrated layer that is formed so as to come into contact with a barrier film and a Cu layer that is formed on the copper alloy underlayer containing an oxygen-calcium concentrated layer. The copper alloy underlayer containing an oxygen-calcium concentrated layer includes a concentrated layer, and the concentrated layer includes 2 mol % to 30 mol % of Ca, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance.This thin-film transistor according to another aspect of the present invention includes a drain electrode film and a source electrode film, each of which includes a composite copper alloy film including a copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer that is formed so as to come into contact with a barrier film and a Cu alloy layer that is formed on the copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer. The copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer is a copper alloy underlayer including a concentrated layer, and the concentrated layer includes 2 mol % to 30 mol % of Ca, 1 mol % to 10 mol % in total of one or more selected from the group consisting of Al, Sn, and Sb, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance.
    • 根据本发明的一个方面的该薄膜晶体管包括漏电极膜和源极电极膜,它们都包括复合铜合金膜,该复合铜合金膜包括含有氧 - 钙浓缩层的铜合金底层,所述氧 - 钙浓缩层形成为 与形成在含有氧 - 钙浓缩层的铜合金底层上的阻挡膜和Cu层接触。 含有氧 - 钙浓缩层的铜合金底层包括浓缩层,浓缩层包含2mol%至30mol%的Ca,20mol%至50mol%的氧,以及Cu和不可避免的杂质作为余量。 根据本发明的另一方面的薄膜晶体管包括漏极电极膜和源极电极膜,它们都包括复合铜合金膜,该复合铜合金膜包括含有氧-Ca(Al,Sn,Sb)的铜合金底层, 形成为与包含氧-Ca(Al,Sn,Sb)浓缩层的铜合金底层上形成的阻挡膜和Cu合金层接触的浓缩层。 包含氧-Ca(Al,Sn,Sb)浓缩层的铜合金底层是包括浓缩层的铜合金底层,浓缩层包含2mol%至30mol%的Ca,1mol%至10mol% 总计选自由Al,Sn和Sb组成的组中的一种或多种,​​20mol%至50mol%的氧,以及作为余量的Cu和不可避免的杂质。