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11. 发明申请

US20060275548A1 Method and apparatus for depositing a coating on a tape carrier 失效
标题翻译：用于在带载体上沉积涂层的方法和装置
公开(公告)号：US20060275548A1
公开(公告)日：2006-12-07
申请号：US11443808
申请日：2006-05-31
申请人： Jonathan Storer , Vladimir Matias
发明人： Jonathan Storer , Vladimir Matias
IPC分类号： C23C16/00 , C23C14/00
CPC分类号： C23C16/545 , C23C14/0021 , C23C14/0068 , C23C14/562 , C23C16/45517 , H01L39/2432 , H01L39/2435 , H01L39/2448 , H01L39/2487
摘要： A system and method for depositing ceramic materials, such as nitrides and oxides, including high temperature superconducting oxides on a tape substrate. The system includes a tape support assembly that comprises a rotatable drum. The rotatable drum supports at least one tape substrate axially disposed on the surface of the drum during the deposition of metals on the tape and subsequent oxidation to form the ceramic materials. The drum is located within a stator having a slot that is axially aligned with the drum. A space exists between the drum and stator. The space is filled with a predetermined partial pressure of a reactive gas. The drum, stator, and space are heated to a predetermined temperature. To form the ceramic material on the tape substrate, the drum is first rotated to align the tape substrate with the slot, and at least one metal is deposited on the substrate. The drum then continues to rotate, bringing the tape substrate into the space, where the metal deposited on the tape substrate reacts with the reactive gas to form the ceramic material. In one embodiment, the tape support system also includes a pay-out/take-up system that co-rotates with the drum and provides a continuous length of tape substrate.
摘要翻译：一种用于在带基材上沉积诸如氮化物和氧化物（包括高温超导氧化物）的陶瓷材料的系统和方法。该系统包括带支撑组件，其包括可旋转的滚筒。可旋转滚筒在金属沉积在带子上并随后氧化以形成陶瓷材料时，支撑轴向设置在滚筒表面上的至少一个带基片。滚筒位于具有与滚筒轴向对齐的槽的定子内。鼓和定子之间存在一个空间。空间填充有反应气体的预定分压。鼓，定子和空间被加热到预定温度。为了在带基材上形成陶瓷材料，首先旋转滚筒以将带基材与槽对准，并且至少一种金属沉积在基板上。然后滚筒继续旋转，使带基材进入空间，沉积在带基材上的金属与反应气体反应形成陶瓷材料。在一个实施例中，带支撑系统还包括与鼓共旋转并提供连续长度的带基底的放出/收卷系统。

12. 发明申请

US20060033160A1 Conductive layer for biaxially oriented semiconductor film growth 失效
标题翻译：用于双轴取向半导体膜生长的导电层
公开(公告)号：US20060033160A1
公开(公告)日：2006-02-16
申请号：US11245721
申请日：2005-10-06
申请人： Alp Findikoglu , Vladimir Matias
发明人： Alp Findikoglu , Vladimir Matias
IPC分类号： H01L27/12
CPC分类号： H01L31/022408 , C03C14/008 , C03C2214/32 , H01L31/022466 , H01L31/036 , H01L31/1884 , Y02E10/50
摘要： A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.
摘要翻译：用于双轴取向半导体膜生长的导电层和诸如光电检测器，光伏电池或发光二极管（LED）的薄膜半导体结构，其包括设置在导电层上的晶体学取向的半导体膜。薄膜半导体结构包括：基板; 沉积在基板上的第一电极; 以及外延沉积在第一电极上的半导体层。第一电极包括沉积在衬底上的模板层和外延沉积在模板层上的缓冲层。模板层包括导电并具有岩盐晶体结构的第一金属氮化物，并且缓冲层包括导电的第二金属氮化物。半导体层外延沉积在缓冲层上。还描述了制造这种薄膜半导体结构的方法。

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