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11. 发明授权

US07521704B2 Memory device using multi-layer with a graded resistance change 有权
标题翻译：存储器件使用多层具有分级电阻变化
公开(公告)号：US07521704B2
公开(公告)日：2009-04-21
申请号：US11116332
申请日：2005-04-28
申请人： Myoung-jae Lee , In-kyeong Yoo , Sun-ae Seo , Dong-seok Suh , David Seo , Sang-hun Jeon
发明人： Myoung-jae Lee , In-kyeong Yoo , Sun-ae Seo , Dong-seok Suh , David Seo , Sang-hun Jeon
IPC分类号： H01L29/02
CPC分类号： G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A memory device using a multi-layer with a graded resistance change is provided. The memory device includes: a lower electrode; a data storage layer being located on the lower electrode and having the graded resistance change; and an upper electrode being located on the data storage layer.
摘要翻译：提供了使用具有分级电阻变化的多层的存储器件。存储器件包括：下电极; 数据存储层位于下电极上并具有分级电阻变化; 并且上电极位于数据存储层上。

12. 发明授权

US07391075B2 Non-volatile semiconductor memory device with alternative metal gate material 有权
标题翻译：具有替代金属栅极材料的非易失性半导体存储器件
公开(公告)号：US07391075B2
公开(公告)日：2008-06-24
申请号：US11246114
申请日：2005-10-11
申请人： Sang-hun Jeon , Jeong-hee Han , Chung-woo Kim
发明人： Sang-hun Jeon , Jeong-hee Han , Chung-woo Kim
IPC分类号： H01L29/788
CPC分类号： H01L29/513 , G11C16/0416 , G11C16/0466 , H01L21/28273 , H01L21/28282 , H01L29/7881 , H01L29/792
摘要： A non-volatile semiconductor memory device comprises a substrate including a source region, a drain region and a channel region provided between the source region and the drain region with a gate stack located above the channel region with a metal gate located above the gate stack. The metal gate is comprised of a metal having a specific metal work function relative to a composition of a layer of the gate stack that causes electrons to travel through the entire thickness of the blocking layer via direct tunneling. The gate stack preferably comprises a multiple layer stack selected from a group of multiple layer stacks consisting of: ONO, ONH, OHH, OHO, HHH, or HNH, where O is an oxide material, N is SiN, and H is a high κ material.
摘要翻译：非易失性半导体存储器件包括：衬底，其包括源区域，漏极区域和设置在源极区域和漏极区域之间的沟道区域，栅极堆叠位于沟道区域上方，金属栅极位于栅极叠层之上。金属栅极由具有特定的金属功函数的金属组成，相对于栅堆叠层的组成，其使电子通过直接隧道穿过阻挡层的整个厚度。栅极堆叠优选地包括选自由以下组成的多层堆叠的多层堆叠：ONO，ONH，OHH，OHO，HHH或HNH，其中O是氧化物材料，N是SiN，H是高kappa 材料。

13. 发明申请

US20050247921A1 Memory device using multi-layer with a graded resistance change 有权
标题翻译：存储器件使用多层具有分级电阻变化
公开(公告)号：US20050247921A1
公开(公告)日：2005-11-10
申请号：US11116332
申请日：2005-04-28
申请人： Myoung-jae Lee , In-kyeong Yoo , Sun-ae Seo , Dong-seok Suh , David Seo , Sang-hun Jeon
发明人： Myoung-jae Lee , In-kyeong Yoo , Sun-ae Seo , Dong-seok Suh , David Seo , Sang-hun Jeon
IPC分类号： H01L27/10 , H01L27/115 , H01L27/24 , H01L29/02 , H01L45/00
CPC分类号： G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A memory device using a multi-layer with a graded resistance change is provided. The memory device includes: a lower electrode; a data storage layer being located on the lower electrode and having the graded resistance change; and an upper electrode being located on the data storage layer.
摘要翻译：提供了使用具有分级电阻变化的多层的存储器件。存储器件包括：下电极; 数据存储层位于下电极上并具有分级电阻变化; 并且上电极位于数据存储层上。

14. 发明授权

US09178030B2 Thin film transistor and display panel employing the same 有权
标题翻译：薄膜晶体管和采用其的显示面板
公开(公告)号：US09178030B2
公开(公告)日：2015-11-03
申请号：US13616964
申请日：2012-09-14
申请人： Sang-hun Jeon , I-hun Song , Chang-jung Kim , Seung-eon Ahn
发明人： Sang-hun Jeon , I-hun Song , Chang-jung Kim , Seung-eon Ahn
IPC分类号： G02F1/136 , H01L29/45 , G02F1/1368 , G06F3/042 , H01L29/49 , H01L29/786 , G02F1/1333
CPC分类号： H01L29/45 , G02F1/13338 , G02F1/1368 , G06F3/0421 , G06F2203/04103 , H01L29/4908 , H01L29/78606 , H01L29/7869
摘要： A thin film transistor is provided. The transistor includes a gate; a first passivation layer covering the gate; a channel layer disposed on the first passivation layer; a source and a drain that are disposed on the first passivation layer and contact two sides of the channel layer; a second passivation layer covering the channel layer, the source, and the drain; first and second transparent electrode layers that are disposed on the second passivation layer and spaced apart from each other; a first transparent conductive via that penetrates the second passivation layer and connects the source and the first transparent electrode layer; and a second transparent conductive via that penetrates the second passivation layer and connects the drain and the second transparent electrode layer. A cross-sectional area of the gate is larger than a cross-sectional area of the channel layer, the source, and the drain combined.
摘要翻译：提供薄膜晶体管。晶体管包括一个栅极; 覆盖所述栅极的第一钝化层; 设置在所述第一钝化层上的沟道层; 源极和漏极，其设置在所述第一钝化层上并接触所述沟道层的两侧; 覆盖沟道层，源极和漏极的第二钝化层; 第一和第二透明电极层，其设置在第二钝化层上并彼此间隔开; 第一透明导电通孔，其穿透所述第二钝化层并连接所述源极和所述第一透明电极层; 以及第二透明导电通孔，其穿透第二钝化层并连接漏极和第二透明电极层。栅极的横截面面积大于沟道层，源极和漏极组合的横截面面积。

15. 发明授权

US08582800B2 Slim-type speaker with interconnecting damper and bobbin 有权
标题翻译：带有互连阻尼器和线轴的超薄型扬声器
公开(公告)号：US08582800B2
公开(公告)日：2013-11-12
申请号：US13343342
申请日：2012-01-04
申请人： Min Kim , Hag-do Kim , Sang-hun Jeon
发明人： Min Kim , Hag-do Kim , Sang-hun Jeon
IPC分类号： H04R9/06 , H04R11/02
CPC分类号： H04R9/043 , Y10T29/49005
摘要： A speaker includes a frame, a diaphragm disposed in a top end of the frame of the speaker and a bobbin disposed below the diaphragm. A voice coil is wound around a bottom end of the bobbin and a magnetic member, which has a groove in which the bottom end of the bobbin around which the voice coil is wound, is inserted and reciprocated in a straight line upward and downward. A central pillar is fixed to the magnetic member at a center of the bobbin and extends parallel to the movement of the bobbin. A damper supports an inner circumferential surface of the bobbin from the central pillar. The damper additionally supports an outer circumferential surface of the bobbin, from the frame, so as to allow the bobbin to reciprocate in a straight line. This results in minimization of wobble and distortion, so that accurate sound is generated.
摘要翻译：扬声器包括框架，设置在扬声器的框架的顶端的隔膜和设置在隔膜下方的筒管。音圈缠绕在线轴的底端，磁性构件具有一个槽，在该槽中绕着绕线圈的绕线筒的底端以一直线向上和向下插入和往复运动。中心支柱固定在线轴的中心处的磁性构件上，并平行于线轴的运动而延伸。阻尼器从中心支柱支撑线轴的内圆周表面。阻尼器另外从框架支撑筒管的外圆周表面，以便使筒管以直线往复运动。这导致摆动和失真的最小化，从而产生准确的声音。

16. 发明申请

US20130168770A1 HIGH-VOLTAGE OXIDE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：高电压氧化物晶体管及其制造方法
公开(公告)号：US20130168770A1
公开(公告)日：2013-07-04
申请号：US13547200
申请日：2012-07-12
申请人： Sang-hun Jeon , Chang-jung Kim , I-hun Song
发明人： Sang-hun Jeon , Chang-jung Kim , I-hun Song
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L29/42384 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： A high-voltage oxide transistor includes a substrate; a channel layer disposed on the substrate; a gate electrode disposed on the substrate to correspond to the channel layer; a source contacting a first side of the channel layer; and a drain contacting a second side of the channel layer, wherein the channel layer includes a plurality of oxide layers, and none of the plurality of oxide layers include silicon. The gate electrode may be disposed on or under the channel layer. Otherwise, the gate electrodes may be disposed respectively on and under the channel layer.
摘要翻译：高压氧化物晶体管包括基板; 设置在所述基板上的沟道层; 设置在所述基板上以对应于所述沟道层的栅电极; 源极，与所述沟道层的第一侧接触; 以及与沟道层的第二面接触的漏极，其中所述沟道层包括多个氧化物层，并且所述多个氧化物层中没有一个包括硅。栅电极可以设置在沟道层上或下面。否则，栅极电极可以分别设置在沟道层上和下面。

17. 发明授权

US08455933B2 Image sensor using light-sensitive transparent oxide semiconductor material 有权
标题翻译：使用感光透明氧化物半导体材料的图像传感器
公开(公告)号：US08455933B2
公开(公告)日：2013-06-04
申请号：US12801392
申请日：2010-06-07
申请人： Sung-ho Park , I-hun Song , Ji-hyun Hur , Sang-hun Jeon
发明人： Sung-ho Park , I-hun Song , Ji-hyun Hur , Sang-hun Jeon
IPC分类号： H01L31/062
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14621 , H01L29/41733
摘要： An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.
摘要翻译：根据示例性实施例的图像传感器可以包括多个感光透明氧化物半导体层作为感光层。光感测层可以堆叠在一个单位像素区域中。

18. 发明申请

US20130027326A1 LIGHT-SENSING APPARATUSES, METHODS OF DRIVING THE LIGHT-SENSING APPARATUSES, AND OPTICAL TOUCH SCREEN APPARATUSES INCLUDING THE LIGHT-SENSING APPARATUSES 有权
标题翻译：感光装置，驱动感光装置的方法，以及包括感光装置的光触控屏幕装置
公开(公告)号：US20130027326A1
公开(公告)日：2013-01-31
申请号：US13465249
申请日：2012-05-07
申请人： Young Kim , I-hun Song , Sang-hun Jeon , Seung-eon Ahn , Joon-chul Goh , Cheol-gon Lee
发明人： Young Kim , I-hun Song , Sang-hun Jeon , Seung-eon Ahn , Joon-chul Goh , Cheol-gon Lee
IPC分类号： G06F3/041 , G01J1/42
CPC分类号： G06F3/0412 , G06F3/042
摘要： A light-sensing apparatus in which a light sensor transistor in a light-sensing pixel is formed of an oxide semiconductor transistor for sensing light, a method of driving the light-sensing apparatus, and an optical touch screen apparatus including the light-sensing apparatus. The light-sensing apparatus includes a light-sensing pixel array having a plurality of light-sensing pixels arranged in rows and columns, and a plurality of gate lines which are arranged in a row direction and respectively provide a gate voltage to the light-sensing pixel. Each of the light-sensing pixels includes a light sensor transistor for sensing light and a switch transistor for outputting a light-sensing signal from the light sensor transistor, and gates of the light sensor transistors of the light-sensing pixels arranged in an arbitrary row are connected to a gate line arranged in a row previous or next to the arbitrary row.
摘要翻译：一种光感测装置，其中光感测像素中的光传感器晶体管由用于感测光的氧化物半导体晶体管形成，驱动光感测装置的方法以及包括光感测装置的光学触摸屏装置。感光装置包括具有排列成行和列的多个感光像素的光感测像素阵列，以及沿行方向排列并分别向光感测提供栅极电压的多条栅极线像素。每个感光像素包括用于感测光的光传感器晶体管和用于输出来自光传感器晶体管的光感测信号的开关晶体管，以及布置在任意行中的感光像素的光传感器晶体管的栅极连接到布置在任意行之前或之后的行中的栅极线。

19. 发明申请

US20120280939A1 Optical Touch Screen Apparatuses And Methods Of Driving The Optical Touch Screen Apparatuses 有权
标题翻译：光学触摸屏设备和光学触摸屏设备的驱动方法
公开(公告)号：US20120280939A1
公开(公告)日：2012-11-08
申请号：US13422384
申请日：2012-03-16
申请人： Seung-eon Ahn , I-hun Song , Sang-hun Jeon , Young Kim
发明人： Seung-eon Ahn , I-hun Song , Sang-hun Jeon , Young Kim
IPC分类号： G06F3/042
CPC分类号： G06F3/0421 , G06F3/0412 , G06F3/0416 , G06F3/042
摘要： An optical touch screen apparatus in which an oxide semiconductor transistor is used as a light sensing device, and a method of driving the optical touch screen apparatus. The optical touch screen apparatus includes an array including a plurality of light sensing pixels for sensing incident light, a gate driver for providing each of the light sensing pixels with a gate voltage and a reset signal and a signal output unit for receiving a light sensing signal from each of the plurality of light sensing pixels to output a data signal. The gate driver includes a plurality of gate lines that provide a gate voltage to each of the light sensing pixels and at least one reset line that provides a reset signal to each of the light sensing pixels and is electrically connected to the plurality of light sensing pixels.
摘要翻译：使用氧化物半导体晶体管作为光感测装置的光学触摸屏装置以及驱动光学触摸屏装置的方法。所述光学触摸屏装置包括：包括用于感测入射光的多个感光像素的阵列;用于为每个所述感光像素提供栅极电压和复位信号的栅极驱动器;以及信号输出单元，用于接收光线感测信号从多个感光像素中的每一个传输数据信号。栅极驱动器包括多个栅极线，其向每个光感测像素提供栅极电压，以及至少一个复位线，其向每个光感测像素提供复位信号，并且电连接到多个光感测像素。

20. 发明申请

US20110156114A1 Image sensor using light-sensitive transparent oxide semiconductor material 有权
标题翻译：使用感光透明氧化物半导体材料的图像传感器
公开(公告)号：US20110156114A1
公开(公告)日：2011-06-30
申请号：US12801392
申请日：2010-06-07
申请人： Sung-ho Park , I-hun Song , Ji-hyun Hur , Sang-hun Jeon
发明人： Sung-ho Park , I-hun Song , Ji-hyun Hur , Sang-hun Jeon
IPC分类号： H01L31/0232
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14621 , H01L29/41733
摘要： An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.
摘要翻译：根据示例性实施例的图像传感器可以包括多个感光透明氧化物半导体层作为感光层。光感测层可以堆叠在一个单位像素区域中。

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