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11. 发明授权

US08030640B2 Nitride semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08030640B2
公开(公告)日：2011-10-04
申请号：US12618164
申请日：2009-11-13
申请人： Jeong Tak Oh , Yong Chun Kim , Dong Joon Kim , Dong Ju Lee
发明人： Jeong Tak Oh , Yong Chun Kim , Dong Joon Kim , Dong Ju Lee
IPC分类号： H01L33/00 , H01L21/30
CPC分类号： H01L33/18 , H01L33/20 , H01L33/32
摘要： A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.
摘要翻译：氮化物半导体发光器件包括衬底，设置在衬底上的第一导电型氮化物半导体层，并且包括放置在其顶表面中的多个V凹坑，形成在每个V形衬底的顶点区域中的硅化合物，凹坑，设置在第一导电型氮化物半导体层上并包括符合多个V凹坑形状的凹陷的有源层和设置在有源层上的第二导电型氮化物半导体层。氮化物半导体发光器件在接收到静电时实现了高静电放电（ESD）的抗性，因为电流集中在V型凹坑中，并且硅化合物置于由晶格缺陷引起的位错上。

12. 发明申请

US20090184334A1 PHOTONIC CRYSTAL LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：光电晶体发光器件及其制造方法
公开(公告)号：US20090184334A1
公开(公告)日：2009-07-23
申请号：US12182383
申请日：2008-07-30
申请人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Yong Chun Kim , Bang Won Oh , Seok Min Hwang , Je Won Kim
发明人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Yong Chun Kim , Bang Won Oh , Seok Min Hwang , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L2933/0083
摘要： There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.
摘要翻译：提供了一种光子晶体发光器件，包括：发光结构，包括第一和第二导电类型半导体层和插入其间的有源层; 形成在所述第二导电型半导体层上的透明电极层，所述透明电极层具有以预定尺寸和周期排列的多个孔，以形成从所述有源层发射的光的光子带隙，由此所述透明电极层包括光子晶体结构; 以及分别与第一导电类型半导体层和透明电极层电连接的第一和第二电极。光子晶体发光器件具有由微孔限定的光子晶体结构形成的透明电极层，从而提高光提取效率。

13. 发明申请

US20140191192A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20140191192A1
公开(公告)日：2014-07-10
申请号：US14235705
申请日：2011-07-29
申请人： Sang Heon Han , Hyun Wook Shim , Je Won Kim , Chu Young Cho , Seong Ju Park , Sung Tae Kim , Jin Tae Kim , Yong Chun Kim , Sang Jun Lee
发明人： Sang Heon Han , Hyun Wook Shim , Je Won Kim , Chu Young Cho , Seong Ju Park , Sung Tae Kim , Jin Tae Kim , Yong Chun Kim , Sang Jun Lee
IPC分类号： H01L33/00 , H01L33/06
CPC分类号： H01L33/0025 , H01L33/04 , H01L33/06 , H01L33/32
摘要： There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer.
摘要翻译：提供了一种半导体发光器件，其通过增加空穴流入有源层同时防止电子溢出而具有改善的发光效率。半导体发光器件包括n型半导体层; 形成在所述n型半导体层上并且包括至少一个量子阱层和交替层叠的至少一个量子势垒层的有源层; 形成在有源层上的电子阻挡层，具有层叠有不同能带隙的三层以上的至少一层多层结构，三层中与有源层相邻的层具有倾斜的能带结构; 以及形成在电子阻挡层上的p型半导体层。

14. 发明授权

US08405103B2 Photonic crystal light emitting device and manufacturing method of the same 有权
标题翻译：光子晶体发光器件及其制造方法相同
公开(公告)号：US08405103B2
公开(公告)日：2013-03-26
申请号：US12182383
申请日：2008-07-30
申请人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Yong Chun Kim , Bang Won Oh , Seok Min Hwang , Je Won Kim
发明人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Yong Chun Kim , Bang Won Oh , Seok Min Hwang , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L2933/0083
摘要： There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.
摘要翻译：提供了一种光子晶体发光器件，包括：发光结构，包括第一和第二导电类型半导体层和插入其间的有源层; 形成在所述第二导电型半导体层上的透明电极层，所述透明电极层具有以预定尺寸和周期排列的多个孔，以形成从所述有源层发射的光的光子带隙，由此所述透明电极层包括光子晶体结构; 以及分别与第一导电类型半导体层和透明电极层电连接的第一和第二电极。光子晶体发光器件具有由微孔限定的光子晶体结构形成的透明电极层，从而提高光提取效率。

15. 发明申请

US20090166669A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20090166669A1
公开(公告)日：2009-07-02
申请号：US12251782
申请日：2008-10-15
申请人： Je Won Kim , Yong Chun Kim , Sang Won Kang , Seok Min Hwang , Seung Wan Chae
发明人： Je Won Kim , Yong Chun Kim , Sang Won Kang , Seok Min Hwang , Seung Wan Chae
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L33/025
摘要： A nitride semiconductor light emitting device and a method of manufacturing the same, which can prevent crystal defects such as dislocation while ensuring uniform current spreading into an active layer. The nitride semiconductor light emitting device includes a first n-nitride semiconductor layer formed on a substrate, a first intermediate pattern layer formed on the first n-nitride semiconductor layer, the first intermediate pattern layer having a nanoscale dot structure made of Si compound, a second n-nitride semiconductor layer formed on the first n-nitride semiconductor layer, a second intermediate pattern layer formed on the second n-nitride semiconductor layer, the second intermediate pattern layer having a nanoscale dot structure made of Si compound, which is electrically insulating, a third n-nitride semiconductor layer formed on the second n-nitride semiconductor layer, an active layer formed on the third n-nitride semiconductor layer, and a p-nitride semiconductor layer formed on the active layer.
摘要翻译：一种氮化物半导体发光器件及其制造方法，其可以在确保均匀的电流扩展到有源层的同时防止诸如位错之类的晶体缺陷。氮化物半导体发光器件包括形成在衬底上的第一氮化物半导体层，形成在第一氮化物半导体层上的第一中间图案层，具有由Si化合物制成的纳米级点结构的第一中间图案层，形成在所述第一氮化物半导体层上的第二氮化物半导体层，形成在所述第二氮化物半导体层上的第二中间图案层，所述第二中间图案层具有由Si化合物制成的纳米级点结构，所述第二中间图案层是电绝缘的形成在第二氮化物半导体层上的第三氮化物半导体层，形成在第三氮化物半导体层上的有源层和形成在有源层上的p型氮化物半导体层。

16. 发明申请

US20100181588A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100181588A1
公开(公告)日：2010-07-22
申请号：US12628467
申请日：2009-12-01
申请人： Dong Yul LEE , Seong Ju Park , Min Ki Kwon , Chu Young Cho , Chang Hee Cho , Yong Chun Kim , Seung Beom Seo , Myung Goo Cheong , Dong Joon Kim
发明人： Dong Yul LEE , Seong Ju Park , Min Ki Kwon , Chu Young Cho , Chang Hee Cho , Yong Chun Kim , Seung Beom Seo , Myung Goo Cheong , Dong Joon Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/06
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括n型半导体层，p型半导体层和设置在其间的有源层，以及设置在有源层与n型和p型之间的至少一种之间的表面等离子体膜层包括金属颗粒和绝缘材料的半导体层，并且包括用于在有源层和n型和p型半导体层中的至少一个之间电连接的导电通孔，其中金属颗粒被绝缘材料包围与n型和p型半导体层中的至少一种绝缘。半导体发光器件可以通过使用表面等离子体共振来实现增强的发射效率。使用半导体发光器件，可以将用于表面等离子体共振的金属的扩散最小化。

17. 发明授权

US08269242B2 Semiconductor light emitting device having surface plasmon layer 有权
标题翻译：具有表面等离子体层的半导体发光器件
公开(公告)号：US08269242B2
公开(公告)日：2012-09-18
申请号：US12628467
申请日：2009-12-01
申请人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Chu Young Cho , Chang Hee Cho , Yong Chun Kim , Seung Beom Seo , Myung Goo Cheong , Dong Joon Kim
发明人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Chu Young Cho , Chang Hee Cho , Yong Chun Kim , Seung Beom Seo , Myung Goo Cheong , Dong Joon Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/06
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括n型半导体层，p型半导体层和设置在其间的有源层，以及设置在有源层与n型和p型之间的至少一种之间的表面等离子体膜层包括金属颗粒和绝缘材料的半导体层，并且包括用于在有源层和n型和p型半导体层中的至少一个之间电连接的导电通孔，其中金属颗粒被绝缘材料包围与n型和p型半导体层中的至少一种绝缘。半导体发光器件可以通过使用表面等离子体共振来实现增强的发射效率。使用半导体发光器件，可以将用于表面等离子体共振的金属的扩散最小化。

18. 发明授权

US07999274B2 White light emitting device 有权
标题翻译：白色发光装置
公开(公告)号：US07999274B2
公开(公告)日：2011-08-16
申请号：US12618269
申请日：2009-11-13
申请人： Jeong Tak Oh , Yong Chun Kim
发明人： Jeong Tak Oh , Yong Chun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L2924/181 , H01L2924/00012
摘要： A white light emitting device is disclosed. The white light emitting device includes a blue light emitting diode (LED) including a plurality of active layers generating different peak wavelengths, and phosphors emitting yellow light when excited by light emitted from the blue LED. The white light emitting device ensures enhanced excitation efficiency of the phosphors, and high luminance.
摘要翻译：公开了一种白色发光器件。白色发光器件包括蓝色发光二极管（LED），其包括产生不同峰值波长的多个有源层，以及当从蓝色LED发射的光激发时发射黄色光的荧光体。白色发光装置确保荧光体的增强的激发效率和高亮度。

19. 发明申请

US20100163899A1 WHITE LIGHT EMITTING DEVICE 有权
标题翻译：白光发光装置
公开(公告)号：US20100163899A1
公开(公告)日：2010-07-01
申请号：US12618269
申请日：2009-11-13
申请人： Jeong Tak Oh , Yong Chun Kim
发明人： Jeong Tak Oh , Yong Chun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L2924/181 , H01L2924/00012
摘要： A white light emitting device is disclosed. The white light emitting device includes a blue light emitting diode (LED) including a plurality of active layers generating different peak wavelengths, and phosphors emitting yellow light when excited by light emitted from the blue LED. The white light emitting device ensures enhanced excitation efficiency of the phosphors, and high luminance.
摘要翻译：公开了一种白色发光器件。白色发光装置包括蓝色发光二极管（LED），其包括产生不同峰值波长的多个有源层，以及当从蓝色LED发射的光激发时发射黄色光的荧光体。白色发光装置确保荧光体的增强的激发效率和高亮度。

20. 发明授权

US08728841B2 Method of manufacturing ESD resistant nitride semiconductor light emitting device with enhanced light extraction efficiency 有权
标题翻译：制造具有增强的光提取效率的耐ESD氮化物半导体发光器件的方法
公开(公告)号：US08728841B2
公开(公告)日：2014-05-20
申请号：US13365056
申请日：2012-02-02
申请人： Jeong Tak Oh , Yong Chun Kim
发明人： Jeong Tak Oh , Yong Chun Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02587 , H01L33/007 , H01L33/06 , H01L33/20 , H01L33/24
摘要： A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.
摘要翻译：公开了一种氮化物半导体发光器件及其制造方法。氮化物半导体发光器件包括衬底，设置在衬底上的n型氮化物半导体层，在其顶表面中包括多个V形凹坑，设置在n型氮化物半导体层上的有源层，并且包括符合多个V形凹坑的形状的凹陷以及设置在活性层上的p型氮化物半导体层，并且在其顶表面上包括多个突起。由于在n型氮化物半导体层的顶表面上形成多个V形凹坑，所以可以作为原位工艺在p型氮化物半导体层上形成突起。因此，提高了对ESD的耐受性和光提取效率。

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