专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 再颁专利

USRE45954E1 Non-volatile storage with temperature compensation based on neighbor state information 有权
公开(公告)号：USRE45954E1
公开(公告)日：2016-03-29
申请号：US14290930
申请日：2014-05-29
申请人： SANDISK TECHNOLOGIES INC.
发明人： Gerrit Jan Hemink , Shinji Sato
IPC分类号： G11C7/04 , G11C16/26 , G11C11/56
CPC分类号： G11C16/26 , G11C7/04 , G11C11/5642
摘要： Data is programmed into and read from a set of target memory cells. When reading the data, temperature compensation is provided. The temperature compensation is based on temperature information and the state of one or more neighbor memory cells. In one embodiment, when data is read from set of target memory cells, the system senses the current temperature and determines the differences in temperature between the current temperature and the temperature at the time the data was programmed. If the difference in temperature is greater than a threshold, then the process of reading the data includes providing temperature compensation based on temperature information and neighbor state information. In one alternative, the decision to provide the temperature compensation can be triggered by conditions other than a temperature differential.

12. 发明授权

US09224457B2 Non-volatile storage with temperature compensation based on neighbor state information 有权
公开(公告)号：US09224457B2
公开(公告)日：2015-12-29
申请号：US14524238
申请日：2014-10-27
申请人： SANDISK TECHNOLOGIES INC.
发明人： Gerrit Jan Hemink , Shinji Sato
IPC分类号： G11C7/04 , G11C11/56 , G11C16/26
CPC分类号： G11C16/26 , G11C7/04 , G11C11/5642
摘要： Data is programmed into and read from a set of target memory cells. When reading the data, temperature compensation is provided. The temperature compensation is based on temperature information and the state of one or more neighbor memory cells. In one embodiment, when data is read from set of target memory cells, the system senses the current temperature and determines the differences in temperature between the current temperature and the temperature at the time the data was programmed. If the difference in temperature is greater than a threshold, then the process of reading the data includes providing temperature compensation based on temperature information and neighbor state information. In one alternative, the decision to provide the temperature compensation can be triggered by conditions other than a temperature differential.

13. 发明授权

US08755234B2 Temperature based compensation during verify operations for non-volatile storage 有权
标题翻译：用于非易失性存储的验证操作期间的温度补偿
公开(公告)号：US08755234B2
公开(公告)日：2014-06-17
申请号：US14048015
申请日：2013-10-07
申请人： Sandisk Technologies Inc.
发明人： Ken Oowada , Yingda Dong , Gerrit Jan Hemink , Man Lung Mui , Hao Nguyen , Seungpil Lee , Jong Park , Fanglin Zhang
IPC分类号： G11C16/26 , G11C16/34 , G11C7/04 , G11C7/12 , G11C16/06
CPC分类号： G11C16/06 , G11C7/04 , G11C11/5642 , G11C16/0483 , G11C16/26 , G11C16/34 , G11C16/3454 , G11C16/3459 , G11C16/3481 , G11C29/021 , G11C29/026 , G11C29/028
摘要： A non-volatile storage system that performs programming and reading processes. The programming process includes coarse/fine programming and verify operations. Programming is verified by testing for two different threshold voltage levels while applying the same voltage level to the control gate of a memory cell by testing for current levels through the memory cells and adjusting the current levels tested for based on current temperature such that the difference between the two effective tested threshold voltage levels remains constant over temperature variation.
摘要翻译：执行编程和读取过程的非易失性存储系统。编程过程包括粗/精编程和验证操作。通过测试两个不同的阈值电压电平来验证编程，同时通过测试存储器单元的电流水平并基于当前温度调整测试的电流水平，将相同的电压电平施加到存储器单元的控制栅极，使得两个有效的测试阈值电压水平在温度变化上保持恒定。

14. 发明申请

US20130016566A1 DETECTING THE COMPLETION OF PROGRAMMING FOR NON-VOLATILE STORAGE 有权
标题翻译：检测完成非易失性存储的编程
公开(公告)号：US20130016566A1
公开(公告)日：2013-01-17
申请号：US13622230
申请日：2012-09-18
申请人： SANDISK TECHNOLOGIES INC.
发明人： Gerrit Jan Hemink
IPC分类号： G11C16/34 , G11C16/04 , G11C16/10
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/3454
摘要： A set of non-volatile storage elements are subjected to a programming process in order to store data. During the programming process, one or more verification operations are performed to determine whether the non-volatile storage elements have reached their target condition to store the appropriate data. Programming can be stopped when all non-volatile storage elements have reached their target level or when the number of non-volatile storage elements that have not reached their target level is less than a number or memory cells that can be corrected using an error correction process during a read operation (or other operation). The number of non-volatile storage elements that have not reached their target level can be estimated by counting the number of non-volatile storage elements that have not reached a condition that is different (e.g., lower) than the target level.
摘要翻译：对一组非易失性存储元件进行编程处理以便存储数据。在编程过程中，执行一个或多个验证操作以确定非易失性存储元件是否已经达到其目标条件以存储适当的数据。当所有非易失性存储元件已经达到其目标电平时或当尚未达到其目标电平的非易失性存储元件的数量小于可以使用纠错过程进行校正的数量或存储器单元时，可以停止编程在读取操作期间（或其他操作）。尚未达到其目标水平的非易失性存储元件的数量可以通过对尚未达到不同于目标水平的条件（例如，较低）的非易失性存储元件的数量进行计数来估计。

15. 发明授权

US09530504B2 Memory cells using multi-pass programming 有权
标题翻译：存储单元使用多遍编程
公开(公告)号：US09530504B2
公开(公告)日：2016-12-27
申请号：US14743755
申请日：2015-06-18
申请人： SANDISK TECHNOLOGIES INC.
发明人： Bo Lei , Gerrit Jan Hemink , Masaaki Higashitani , Jun Wan , Zhenming Zhou
IPC分类号： G11C11/00 , G11C16/04 , G11C11/56
CPC分类号： G11C16/0483 , G11C11/5628
摘要： A method is provided for programming non-volatile memory cells. The non-volatile memory cells are accessible by a plurality of word lines. The method includes using a four-pass programming technique to program a block of the non-volatile memory cells.
摘要翻译：提供了一种用于编程非易失性存储器单元的方法。非易失性存储单元可由多条字线访问。该方法包括使用四遍编程技术对非易失性存储器单元的块进行编程。

16. 发明申请

US20150371703A1 MEMORY CELLS USING MULTI-PASS PROGRAMMING 有权
标题翻译：使用多通道编程的记忆细胞
公开(公告)号：US20150371703A1
公开(公告)日：2015-12-24
申请号：US14743755
申请日：2015-06-18
申请人： SANDISK TECHNOLOGIES INC.
发明人： Bo Lei , Gerrit Jan Hemink , Masaaki Higashitani , Jun Wan , Zhenming Zhou
IPC分类号： G11C11/56
CPC分类号： G11C16/0483 , G11C11/5628
摘要： A method is provided for programming non-volatile memory cells. The non-volatile memory cells are accessible by a plurality of word lines. The method includes using a four-pass programming technique to program a block of the non-volatile memory cells.
摘要翻译：提供了一种用于编程非易失性存储器单元的方法。非易失性存储单元可由多条字线访问。该方法包括使用四遍编程技术对非易失性存储器单元的块进行编程。

17. 发明申请

US20150332759A1 Systems and Methods for Lower Page Writes 有权
标题翻译：较低页面写入的系统和方法
公开(公告)号：US20150332759A1
公开(公告)日：2015-11-19
申请号：US14528892
申请日：2014-10-30
申请人： SanDisk Technologies Inc.
发明人： Jianmin Huang , Bo Lei , Jun Wan , Gerrit Jan Hemink , Steven T. Sprouse , Dana Lee
IPC分类号： G11C11/56
CPC分类号： G11C11/5628 , G11C11/5621 , G11C11/5642 , G11C16/0483 , G11C2211/5641
摘要： In a Multi Level Cell (MLC) memory array block in which lower pages are written first, before any upper pages, the lower page data is subject to an exclusive OR (XOR) operation so that if any lower page becomes uncorrectable by ECC (UECC) then the page can be recovered using XOR. Lower pages in such blocks may be written in nonsequential order.
摘要翻译：在多级单元（MLC）存储器阵列块中，首先写入低层页面，在任何高层页面之前，下层数据进行异或（XOR）操作，以便如果任何下层页面由ECC（UECC）无法校正），则可以使用XOR恢复页面。这些块中的下页可以以非顺序的顺序写入。

18. 发明申请

US20130314987A1 Ramping Pass Voltage To Enhance Channel Boost In Memory Device 有权
标题翻译：缓存通过电压以增强存储器件中的通道升压
公开(公告)号：US20130314987A1
公开(公告)日：2013-11-28
申请号：US13955597
申请日：2013-07-31
申请人： SanDisk Technologies Inc.
发明人： Gerrit Jan Hemink , Shih-Chung Lee , Anubhav Khandelwal , Henry Chin , Guirong Liang , Dana Lee
IPC分类号： G11C16/34
CPC分类号： G11C16/3427 , G11C16/10
摘要： In a non-volatile storage system, first and second substrate channel regions for an unselected NAND string are boosted during programming to inhibit program disturb. The first and second substrate channel regions are created on either side of an isolation word line. During a program pulse time period in which a program pulse is applied to a selected word line, a voltage applied to an unselected word line which extends directly over the second channel region is stepped up to a respective pre-program pulse voltage, at a faster rate at which a voltage applied to an unselected word line which extends directly over the first channel region is stepped up to a respective pre-program pulse voltage. This helps improve the isolation between the channel regions.
摘要翻译：在非易失性存储系统中，用于未选择的NAND串的第一和第二衬底沟道区在编程期间被增强以抑制编程干扰。第一和第二衬底沟道区域在隔离字线的任一侧上产生。在将编程脉冲施加到所选字线的编程脉冲时间段期间，施加到直接在第二通道区域上延伸的未选择字线的电压以更快的速度升高到相应的预编程脉冲电压施加到直接在第一通道区域上延伸的未选择字线的电压的速率被升高到相应的预编程脉冲电压。这有助于改善通道区域之间的隔离。

19. 发明授权

US09548124B1 Word line dependent programming in a memory device 有权
标题翻译：字线依赖编程在存储器件中
公开(公告)号：US09548124B1
公开(公告)日：2017-01-17
申请号：US14882858
申请日：2015-10-14
申请人： SanDisk Technologies Inc.
发明人： Arash Hazeghi , Gerrit Jan Hemink , Dana Lee , Henry Chin , Bo Lei , Zhenming Zhou
IPC分类号： G11C16/10 , G11C16/04 , G11C16/34 , G11C16/20 , G11C16/26
CPC分类号： G11C16/20 , G11C7/14 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/34 , G11C16/3427 , G11C16/3495 , G11C29/021 , G11C29/028
摘要： A memory device includes memory cells arranged in word lines. Due to variations in the fabrication process, with width and spacing between word lines can vary, resulting in widened threshold voltage distributions. In one approach, a programming parameter is optimized for each word line based on a measurement of the threshold voltage distributions in an initial programming operation. An adjustment to the programming parameter of a word line can be based, e.g., on measurements from adjacent word lines, and a position of the word line in a set of word lines. The programming parameter can include a programming mode such as a number of programming passes. Moreover, the programming parameters from one set of word lines can be used for another set of word lines having a similar physical layout due to the variations in the fabrication process.
摘要翻译：存储器件包括以字线布置的存储器单元。由于制造过程的变化，字线之间的宽度和间距可以变化，导致加宽的阈值电压分布。在一种方法中，基于初始编程操作中的阈值电压分布的测量，针对每个字线优化编程参数。对字线的编程参数的调整可以基于例如来自相邻字线的测量值和字线集合中的字线的位置。编程参数可以包括编程模式，例如多个编程遍。此外，由于制造过程的变化，来自一组字线的编程参数可以用于具有类似物理布局的另一组字线。

20. 发明授权

US09443606B2 Word line dependent two strobe sensing mode for nonvolatile storage elements 有权
标题翻译：用于非易失性存储元件的字线依赖两个选通感测模式
公开(公告)号：US09443606B2
公开(公告)日：2016-09-13
申请号：US14525678
申请日：2014-10-28
申请人： SANDISK TECHNOLOGIES INC.
发明人： Deepanshu Dutta , Xiaochang Miao , Gerrit Jan Hemink
IPC分类号： G11C16/26 , G11C16/34 , G11C16/28 , G11C16/24 , G11C16/10 , G11C11/56
CPC分类号： G11C16/3459 , G11C11/5642 , G11C16/10 , G11C16/24 , G11C16/26 , G11C16/28 , G11C16/3427
摘要： A non-volatile storage system includes a plurality of non-volatile storage elements, a plurality of bit lines connected to the non-volatile storage elements, a plurality of word lines connected to the non-volatile storage elements, and one or more control circuits connected to the bit lines and word lines. The one or more control circuits perform programming, verifying, reading and erasing for the non-volatile storage elements. When verifying, a first subset of bit lines connected to non-volatile storage elements are charged to allow for sensing, while a second subset of bit lines are not charged. When reading, a two strobe sensing process is selectively used to more accurately read data from the non-volatile storage elements.
摘要翻译：非易失性存储系统包括多个非易失性存储元件，连接到非易失性存储元件的多个位线，连接到非易失性存储元件的多个字线，以及一个或多个控制电路连接到位线和字线。一个或多个控制电路对非易失性存储元件执行编程，验证，读取和擦除。当验证时，连接到非易失性存储元件的位线的第一子集被充电以允许感测，而位线的第二子集不被充电。当读取时，选择性地使用两个频闪检测处理来更准确地从非易失性存储元件读取数据。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式