专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US09214517B2 Semiconductor device using 2-dimensional electron gas and 2-dimensional hole gas and method of manufacturing the semiconductor device 有权
标题翻译：使用二维电子气体和二维空穴气体的半导体装置及其制造方法
公开(公告)号：US09214517B2
公开(公告)日：2015-12-15
申请号：US13860153
申请日：2013-04-10
申请人： Samsung Electronics Co., Ltd.
发明人： Woo-chul Jeon , Jai-kwang Shin , Jae-joon Oh
IPC分类号： H01L29/15 , H01L29/20 , H01L21/8252 , H01L27/06 , H01L29/66 , H01L29/778 , H01L27/085 , H01L29/417 , H01L29/10
CPC分类号： H01L29/2003 , H01L21/8252 , H01L27/0605 , H01L27/085 , H01L29/1066 , H01L29/41766 , H01L29/66462 , H01L29/7781 , H01L29/7786
摘要： A semiconductor device includes a first compound semiconductor layer on a substrate, first through third electrodes spaced apart from each other on the first compound semiconductor layer, a second compound semiconductor layer on the first compound semiconductor layer between the first through third electrodes, a third compound semiconductor layer on the second compound semiconductor layer between the first and second electrodes, a first gate electrode on the third compound semiconductor layer, a fourth compound semiconductor layer having a smaller thickness than the third compound semiconductor layer on a portion of the second compound semiconductor layer between the second and third electrodes, and a second gate electrode on the fourth compound semiconductor layer. The first compound semiconductor layer between the second and third electrodes includes a 2-dimensional electron gas (2DEG) and the third compound semiconductor layer includes a 2-dimensional hole gas (2DHG).
摘要翻译：半导体器件包括：衬底上的第一化合物半导体层，在第一化合物半导体层上彼此间隔开的第一至第三电极，在第一至第三电极之间的第一化合物半导体层上的第二化合物半导体层，第三化合物在第一和第二电极之间的第二化合物半导体层上的半导体层，第三化合物半导体层上的第一栅电极，在第二化合物半导体层的一部分上具有比第三化合物半导体层更小的厚度的第四化合物半导体层在第二和第三电极之间以及在第四化合物半导体层上的第二栅电极。第二和第三电极之间的第一化合物半导体层包括二维电子气（2DEG），第三化合物半导体层包括二维空穴气体（2DHG）。

12. 发明申请

US20150221745A1 HIGH ELECTRON MOBILITY TRANSISTORS AND METHODS OF MANUFACTURING THE SAME 审中-公开
标题翻译：高电子移动晶体管及其制造方法
公开(公告)号：US20150221745A1
公开(公告)日：2015-08-06
申请号：US14686436
申请日：2015-04-14
申请人： Samsung Electronics Co., Ltd.
发明人： In-jun HWANG , Hyuk-soon Choi , Jae-joon Oh , Jong-bong Ha , Jong-seob Kim , Ki-ha Hong , Jai-kwang Shin
IPC分类号： H01L29/66 , H01L29/20
CPC分类号： H01L29/66462 , H01L29/1066 , H01L29/2003 , H01L29/7787
摘要： High electron mobility transistors (HEMTs) including a substrate and a HEMT stack on the substrate, the HEMT stack including a compound semiconductor layer that includes a 2-dimensional electron gas (2DEG), an upper compound semiconductor layer that has a polarization index higher than a polarization index of the compound semiconductor layer, and a source electrode, a drain electrode, and a gate that are disposed on the upper compound semiconductor layer. The substrate may be a nitride substrate that has a dielectric constant and a thermal conductivity higher than a dielectric constant and a thermal conductivity of a silicon substrate. The substrate may include an insulating layer that has a dielectric constant and a thermal conductivity higher than a dielectric constant and a thermal conductivity of the silicon substrate, a metal layer that is deposited on the insulating layer, and a plate that is attached to the metal layer.
摘要翻译：包括衬底和衬底上的HEMT堆叠的高电子迁移率晶体管（HEMT），所述HEMT堆叠包括包含二维电子气（2DEG）的化合物半导体层，具有高于化合物半导体层的极化指数，以及设置在上部化合物半导体层上的源电极，漏电极和栅极。衬底可以是氮化物衬底，其具有高于介电常数和硅衬底的热导率的介电常数和导热系数。衬底可以包括绝缘层，该绝缘层的介电常数和热导率高于介电常数和硅衬底的热导率，沉积在绝缘层上的金属层和附着到金属的板层。

13. 发明授权

US09082693B2 Nitride semiconductor based power converting device 有权
标题翻译：氮化物半导体电力转换装置
公开(公告)号：US09082693B2
公开(公告)日：2015-07-14
申请号：US13921466
申请日：2013-06-19
申请人： Samsung Electronics Co., Ltd.
发明人： Woo-chul Jeon , Baik-woo Lee , Jai-kwang Shin , Jae-joon Oh
IPC分类号： H01L31/0328 , H01L29/205
CPC分类号： H01L29/205 , H01L21/2654 , H01L21/8252 , H01L27/0605 , H01L27/0629 , H01L28/10 , H01L28/20 , H01L29/0642 , H01L29/2003 , H01L29/7786 , H01L29/86 , H01L29/94
摘要： A nitride semiconductor based power converting device includes a nitride semiconductor based power transistor, and at least one nitride semiconductor based passive device. The passive device and the power transistor respectively include a channel layer including a first nitride semiconductor material, and a channel supply layer on the channel layer including a second nitride semiconductor material to induce a 2-dimensional electron gas (2DEG) at the channel layer. The passive device may be a resistor, an inductor, or a capacitor.
摘要翻译：一种基于氮化物半导体的功率转换器件包括基于氮化物半导体的功率晶体管和至少一个基于氮化物半导体的无源器件。无源器件和功率晶体管分别包括包括第一氮化物半导体材料的沟道层和在沟道层上的沟道供应层，该沟道层包括在沟道层处引起二维电子气（2DEG）的第二氮化物半导体材料。无源器件可以是电阻器，电感器或电容器。

14. 发明授权

US08890212B2 Normally-off high electron mobility transistor 有权
标题翻译：常关高电子迁移率晶体管
公开(公告)号：US08890212B2
公开(公告)日：2014-11-18
申请号：US13874920
申请日：2013-05-01
申请人： Samsung Electronics Co., Ltd.
发明人： Woo-chul Jeon , Young-hwan Park , Jae-joon Oh , Kyoung-yeon Kim , Joon-yong Kim , Ki-yeol Park , Jai-kwang Shin , Sun-kyu Hwang
IPC分类号： H01L29/66 , H01L29/15 , H01L33/00 , H01L29/12 , H01L29/20 , H01L29/778 , H01L29/10 , H01L29/423 , H01L29/40
CPC分类号： H01L29/778 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/42316 , H01L29/7786
摘要： According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.
摘要翻译：根据示例性实施例，常关高电子迁移率晶体管（HEMT）包括：具有第一氮化物半导体的沟道层，沟道层上的沟道供应层，沟道供应层侧面的源电极和漏电极沟道供应层上的耗尽形成层，耗尽型层上的栅极绝缘层和栅极绝缘层上的栅电极。沟道供给层包括第二氮化物半导体，并且被配置为在沟道层中诱导二维电子气（2DEG）。耗尽形成层被配置为具有至少两个厚度，并且被配置为在2DEG的至少部分区域中形成耗尽区。栅电极与耗尽形成层接触。

15. 发明申请

US20140091310A1 SEMICONDUCTOR DEVICE USING 2-DIMENSIONAL ELECTRON GAS AND 2-DIMENSIONAL HOLE GAS AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE 有权
标题翻译：使用二维电子气体和二维孔气体的半导体器件及制造半导体器件的方法
公开(公告)号：US20140091310A1
公开(公告)日：2014-04-03
申请号：US13860153
申请日：2013-04-10
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Woo-chul Jeon , Jai-kwang Shin , Jae-joon Oh
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , H01L21/8252 , H01L27/0605 , H01L27/085 , H01L29/1066 , H01L29/41766 , H01L29/66462 , H01L29/7781 , H01L29/7786
摘要： A semiconductor device includes a first compound semiconductor layer on a substrate, first through third electrodes spaced apart from each other on the first compound semiconductor layer, a second compound semiconductor layer on the first compound semiconductor layer between the first through third electrodes, a third compound semiconductor layer on the second compound semiconductor layer between the first and second electrodes, a first gate electrode on the third compound semiconductor layer, a fourth compound semiconductor layer having a smaller thickness than the third compound semiconductor layer on a portion of the second compound semiconductor layer between the second and third electrodes, and a second gate electrode on the fourth compound semiconductor layer. The first compound semiconductor layer between the second and third electrodes includes a 2-dimensional electron gas (2DEG) and the third compound semiconductor layer includes a 2-dimensional hole gas (2DHG).
摘要翻译：半导体器件包括：衬底上的第一化合物半导体层，在第一化合物半导体层上彼此间隔开的第一至第三电极，在第一至第三电极之间的第一化合物半导体层上的第二化合物半导体层，第三化合物在第一和第二电极之间的第二化合物半导体层上的半导体层，第三化合物半导体层上的第一栅电极，在第二化合物半导体层的一部分上具有比第三化合物半导体层更小的厚度的第四化合物半导体层在第二和第三电极之间以及在第四化合物半导体层上的第二栅电极。第二和第三电极之间的第一化合物半导体层包括二维电子气（2DEG），第三化合物半导体层包括二维空穴气体（2DHG）。

16. 发明授权

US09859410B2 High electron mobility transistors and methods of fabricating the same 有权
公开(公告)号：US09859410B2
公开(公告)日：2018-01-02
申请号：US14497585
申请日：2014-09-26
申请人： Samsung Electronics Co., Ltd.
发明人： In-jun Hwang , Jai-kwang Shin , Jae-joon Oh , Jong-seob Kim , Hyuk-soon Choi , Ki-ha Hong
IPC分类号： H01L29/778 , H01L29/267 , H01L29/51 , H01L29/66 , H01L29/08 , H01L29/10 , H01L29/20 , H01L29/423
CPC分类号： H01L29/778 , H01L29/0847 , H01L29/1029 , H01L29/1066 , H01L29/2003 , H01L29/267 , H01L29/4236 , H01L29/42364 , H01L29/517 , H01L29/66431 , H01L29/66462 , H01L29/7785 , H01L29/7786
摘要： A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the drain electrode are located on the channel supplying layer. A channel increase layer is between the channel supplying layer and the source and drain electrodes. A thickness of the channel supplying layer is less than about 15 nm.

17. 发明授权

US09306544B2 Electronic device including transistor and method of operating the same 有权
标题翻译：包括晶体管的电子器件及其操作方法
公开(公告)号：US09306544B2
公开(公告)日：2016-04-05
申请号：US13789884
申请日：2013-03-08
申请人： Samsung Electronics Co., Ltd.
发明人： Woo-chul Jeon , Ki-yeol Park , Young-hwan Park , Jai-kwang Shin , Jae-joon Oh
IPC分类号： H03B1/00 , H03K3/012 , H03K17/687
CPC分类号： H03K3/012 , H03K17/6871 , H03K2017/6875
摘要： An electronic device may include a first transistor having a normally-on characteristic; a second transistor connected to the first transistor and having a normally-off characteristic; a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor; and a switching unit configured to apply a switching signal to the second transistor. The first transistor may be a high electron mobility transistor (HEMT). The second transistor may be a field-effect transistor (FET). The constant voltage application unit may include a diode connected to the gate of the first transistor; and a constant current source connected to the diode.
摘要翻译：电子设备可以包括具有常开特性的第一晶体管; 连接到第一晶体管并具有常关特性的第二晶体管; 恒压施加单元，被配置为向所述第一晶体管的栅极施加恒定电压; 以及切换单元，被配置为向第二晶体管施加切换信号。第一晶体管可以是高电子迁移率晶体管（HEMT）。第二晶体管可以是场效应晶体管（FET）。恒压施加单元可以包括连接到第一晶体管的栅极的二极管; 和连接到二极管的恒流源。

18. 发明授权

US09252255B2 High electron mobility transistor and method of manufacturing the same 有权
标题翻译：高电子迁移率晶体管及其制造方法
公开(公告)号：US09252255B2
公开(公告)日：2016-02-02
申请号：US14085121
申请日：2013-11-20
申请人： Samsung Electronics Co., Ltd.
发明人： Jong-seob Kim , In-jun Hwang , Jai-kwang Shin , Jae-joon Oh , Woo-chul Jeon , Hyuk-soon Choi , Sun-kyu Hwang
IPC分类号： H01L29/66 , H01L29/778 , H01L29/10 , H01L29/417 , H01L29/06 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/41725 , H01L29/41766 , H01L29/66462
摘要： Provided are a high electron mobility transistor (HEMT) and a method of manufacturing the HEMT. The HEMT includes: a channel layer comprising a first semiconductor material; a channel supply layer comprising a second semiconductor material and generating two-dimensional electron gas (2DEG) in the channel layer; a source electrode and a drain electrode separated from each other in the channel supply layer; at least one depletion forming unit that is formed on the channel supply layer and forms a depletion region in the 2DEG; at least one gate electrode that is formed on the at least one depletion forming unit; at least one bridge that connects the at least one depletion forming unit and the source electrode; and a contact portion that extends from the at least one bridge under the source electrode.
摘要翻译：提供高电子迁移率晶体管（HEMT）和制造HEMT的方法。 HEMT包括：包含第一半导体材料的沟道层; 沟道供应层，包括第二半导体材料并在沟道层中产生二维电子气（2DEG）; 在所述沟道供给层中彼此分离的源电极和漏电极; 至少一个耗尽形成单元，其形成在所述沟道供应层上并在所述2DEG中形成耗尽区; 至少一个栅电极，形成在所述至少一个耗尽形成单元上; 连接所述至少一个耗尽形成单元和所述源电极的至少一个桥; 以及从所述源电极下方的所述至少一个桥延伸的接触部。

19. 发明授权

US09231093B2 High electron mobility transistor and method of manufacturing the same 有权
标题翻译：高电子迁移率晶体管及其制造方法
公开(公告)号：US09231093B2
公开(公告)日：2016-01-05
申请号：US13804188
申请日：2013-03-14
申请人： Samsung Electronics Co., Ltd.
发明人： Woo-chul Jeon , Kyoung-yeon Kim , Jong-seob Kim , Joon-yong Kim , Ki-yeol Park , Young-hwan Park , Jai-kwang Shin , Jae-joon Oh , Hyuk-soon Choi , Jong-bong Ha , Sun-kyu Hwang , In-jun Hwang
IPC分类号： H01L29/778 , H01L29/66 , H01L29/872 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/47 , H01L29/10 , H01L29/20
CPC分类号： H01L29/778 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/41766 , H01L29/4236 , H01L29/475 , H01L29/66431 , H01L29/66462 , H01L29/7786 , H01L29/872
摘要： A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.
摘要翻译：根据示例实施例的高电子迁移率晶体管（HEMT）包括沟道层，沟道层上的沟道供应层，沟道层和沟道供应层中的至少一个上的源电极和漏电极，栅电极源极电极和漏极电极之间，肖特基电极与沟道供给层形成肖特基接触。通道供应层的上表面可以限定肖特基电极调节单元。肖特基电极的至少一部分可以在肖特基电极调节单元中。肖特基电极电连接到源电极。

20. 发明授权

US09184280B2 Semiconductor device having dual parallel channel structure and method of fabricating the same 有权
标题翻译：具有双平行通道结构的半导体器件及其制造方法
公开(公告)号：US09184280B2
公开(公告)日：2015-11-10
申请号：US13960333
申请日：2013-08-06
申请人： Samsung Electronics Co., Ltd.
发明人： Chang-yong Um , Jai-kwang Shin
IPC分类号： H01L29/78 , H01L29/66 , H01L29/423 , H01L29/08 , H01L29/10 , H01L21/28
CPC分类号： H01L29/7813 , H01L21/2815 , H01L29/0865 , H01L29/1095 , H01L29/42376 , H01L29/4238 , H01L29/66734 , H01L29/7803
摘要： A semiconductor device may include a substrate having a drift region doped to a first conduction type. A trench may be etched into an upper surface of the substrate. A gate may be arranged along side walls of the trench. A gate oxide layer may be between the side walls of the trench and gate and between a bottom surface of the trench and gate. A first source region of the first conduction type may be on the upper surface of the substrate. A second source region of the first conduction type may be on the bottom surface of the trench. A first well region may be between the first source region and drift region, and a second well region may be between the second source region and drift region, the first and second well regions being doped to a second conduction type (electrically opposite to the first conduction type).
摘要翻译：半导体器件可以包括具有掺杂到第一导电类型的漂移区的衬底。可以将沟槽蚀刻到衬底的上表面中。栅极可以沿着沟槽的侧壁布置。栅极氧化物层可以在沟槽的侧壁和栅极之间以及沟槽的底表面和栅极之间。第一导电类型的第一源区可以在衬底的上表面上。第一导电类型的第二源极区可以在沟槽的底表面上。第一阱区可以在第一源极区域和漂移区域之间，第二阱区域可以在第二源极区域和漂移区域之间，第一和第二阱区域被掺杂到第二导电类型（与第一源区域导电型）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式