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11. 发明申请

US20050272236A1 METHOD FOR FORMING BIT LINE CONTACT HOLE/CONTACT STRUCTURE 有权
标题翻译：形成位线接触孔/接触结构的方法
公开(公告)号：US20050272236A1
公开(公告)日：2005-12-08
申请号：US10862570
申请日：2004-06-08
申请人： Meng-Hung Chen , Chia-Sheng Yu
发明人： Meng-Hung Chen , Chia-Sheng Yu
IPC分类号： H01L21/44 , H01L21/60 , H01L21/8242
CPC分类号： H01L21/76897 , H01L27/10888 , H01L27/10891
摘要： Disclosed is a method for forming a bit line contact hole/contact structure. The method of the present invention comprises steps of providing a substrate; forming a pluarality of word line structures on the substrate; forming a doped dielectric layer on the substrate having the word line structures formed thereon; defining a position for forming a bit line contact hole; removing the doped dielectric layer other than the portion at the position for forming the bit line contact hole; forming a non-doped dielectric layer on the substrate having the word line structures and residual doped dielectric layer formed thereon; removing the residual doped dielectric layer by using an etchant with a high selectivity for doped dielectric layer/non-doped dielectric layer to form a bit line contact hole; and filling the bit line contact hole with conductive material for form a bit line contact structure.
摘要翻译：公开了一种形成位线接触孔/接触结构的方法。本发明的方法包括提供基底的步骤; 在衬底上形成字线结构的一个重要原因; 在其上形成有字线结构的衬底上形成掺杂介质层; 限定用于形成位线接触孔的位置; 除去除了用于形成位线接触孔的位置处的部分之外的掺杂电介质层; 在其上形成有字线结构和残留掺杂介电层的衬底上形成非掺杂电介质层; 通过使用对掺杂介质层/非掺杂介质层具有高选择性的蚀刻剂来去除残余掺杂介电层，以形成位线接触孔; 并用导电材料填充位线接触孔，形成位线接触结构。

12. 发明授权

US06977210B1 Method for forming bit line contact hole/contact structure 有权
标题翻译：用于形成位线接触孔/接触结构的方法
公开(公告)号：US06977210B1
公开(公告)日：2005-12-20
申请号：US10862570
申请日：2004-06-08
申请人： Meng-Hung Chen , Chia-Sheng Yu
发明人： Meng-Hung Chen , Chia-Sheng Yu
IPC分类号： H01L21/44 , H01L21/60 , H01L21/8242
CPC分类号： H01L21/76897 , H01L27/10888 , H01L27/10891
摘要： Disclosed is a method for forming a bit line contact hole/contact structure. The method of the present invention includes steps of providing a substrate; forming a plurality of word line structures on the substrate; forming a doped dielectric layer on the substrate having the word line structures formed thereon; defining a position for forming a bit line contact hole; removing the doped dielectric layer other than the portion at the position for forming the bit line contact hole; forming a non-doped dielectric layer on the substrate having the word line structures and residual doped dielectric layer formed thereon; removing the residual doped dielectric layer by using an etchant with a high selectivity for doped dielectric layer/non-doped dielectric layer to form a bit line contact hole; and filling the bit line contact hole with conductive material to form a bit line contact structure.
摘要翻译：公开了一种形成位线接触孔/接触结构的方法。本发明的方法包括提供基板的步骤; 在所述基板上形成多个字线结构; 在其上形成有字线结构的衬底上形成掺杂介质层; 限定用于形成位线接触孔的位置; 除去除了用于形成位线接触孔的位置处的部分之外的掺杂电介质层; 在其上形成有字线结构和残留掺杂介电层的衬底上形成非掺杂电介质层; 通过使用对掺杂介质层/非掺杂介质层具有高选择性的蚀刻剂来去除残余掺杂介电层，以形成位线接触孔; 并用导电材料填充位线接触孔以形成位线接触结构。

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