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11. 发明授权

US4430138A Microwave plasma etching apparatus having fan-shaped discharge 失效
标题翻译：具有扇形放电的微波等离子体蚀刻装置
公开(公告)号：US4430138A
公开(公告)日：1984-02-07
申请号：US138082
申请日：1980-04-07
申请人： Keizo Suzuki , Sadayuki Okudaira , Shigeru Nishimatsu , Ichiro Kanomata
发明人： Keizo Suzuki , Sadayuki Okudaira , Shigeru Nishimatsu , Ichiro Kanomata
IPC分类号： C23F4/00 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H05H1/30 , C23F1/02
CPC分类号： H01L21/67069 , H01J37/32192 , H05H1/30 , H01J2237/3343
摘要： In a microwave plasma etching apparatus wherein the surface of a sample is exposed to a plasma generated by microwave discharge, thereby to subject the sample surface to an etching processing; the sample is transported while revolving along a circular orbit in a plasma exposure region, and the section of the plasma exposure region is put into the shape of a fan whose pivot coincides with the central point of the circuit orbit, whereby the enhancement of the etching processing capability and the uniformity of the etching speed are achieved.
摘要翻译：在微波等离子体蚀刻装置中，其中样品的表面暴露于通过微波放电产生的等离子体，从而使样品表面进行蚀刻处理; 样品在等离子体曝光区域中沿着圆形轨道旋转传送，并且等离子体暴露区域的部分被放置成其枢转与电路轨道的中心点重合的风扇的形状，由此增强蚀刻实现了处理能力和蚀刻速度的均匀性。

12. 发明授权

US4844767A Method of and apparatus for etching 失效
标题翻译：蚀刻方法和设备
公开(公告)号：US4844767A
公开(公告)日：1989-07-04
申请号：US158126
申请日：1988-02-16
申请人： Sadayuki Okudaira , Shigeru Nishimatsi , Keizo Suzuki , Ken Ninomiya
发明人： Sadayuki Okudaira , Shigeru Nishimatsi , Keizo Suzuki , Ken Ninomiya
IPC分类号： H01L21/302 , C23F4/00 , H01J37/32 , H01L21/3065 , H01L21/3213
CPC分类号： H01J37/32192 , H01J37/32706 , H01L21/32136 , H01J2237/3346
摘要： A plasma which is formed by the contact between a microwave and a reaction gas is brought into contact with an article to be etched which is AC-biased, thereby effecting etching of an exposed region of the article. The etching is carried out in a state wherein the self-bias formed between the plasma and the article is minimized, whereby it is possible to effect etching which provides high selectivity and which enables a substantially vertical side wall to be formed.
摘要翻译：通过微波和反应气体之间的接触而形成的等离子体与被AC偏压的被蚀刻物接触，从而进行对物品的暴露区域的蚀刻。在等离子体和制品之间形成的自偏压最小化的状态下进行蚀刻，从而可以实现提供高选择性的蚀刻，并且能够形成基本垂直的侧壁。

13. 发明授权

US4609426A Method and apparatus for monitoring etching 失效
标题翻译：用于监测蚀刻的方法和装置
公开(公告)号：US4609426A
公开(公告)日：1986-09-02
申请号：US736769
申请日：1985-05-22
申请人： Yoshifumi Ogawa , Masaharu Nishiumi , Yoshie Tanaka , Sadayuki Okudaira , Shigeru Nishimatsu
发明人： Yoshifumi Ogawa , Masaharu Nishiumi , Yoshie Tanaka , Sadayuki Okudaira , Shigeru Nishimatsu
IPC分类号： H01L21/302 , G01N21/62 , H01J37/32 , H01L21/145 , H01L21/3065 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01J37/32935 , G01N21/62 , G01N2201/122
摘要： This invention relates to a method and apparatus for monitoring etching. The monitor method comprises the steps of regulating a gas pressure inside a treating chamber, in which a sample is being etched by a dry etching process, to a pressure at which a emission line spectrum can be clarified, converting the gas whose pressure is regulated to plasma, and monitoring the etching state of the sample from the change of the intensity of the emission line spectrum with time. The monitor apparatus comprises exhaust means for discharging a gas from a treating chamber in which a sample is being etched by a dry etching process, plasma means for introducing the gas discharged from the treating chamber and converting it plasma, pressure regulation means for regulating the pressure of the gas at the plasma means to a pressure at which a emission line spectrum can be clarified, and spectrum detection means for detecting the emission line spectrum of the plasma at the plasma means, and detecting the change of the intensity of the detected emission line spectrum with time.
摘要翻译：本发明涉及一种用于监测蚀刻的方法和装置。监测方法包括以下步骤：将通过干蚀刻工艺蚀刻样品的处理室内的气体压力调节到可以澄清发射谱线谱的压力，将压力调节的气体转化为等离子体，并且随着时间的推移从发射线谱的强度的变化监测样品的蚀刻状态。监视器装置包括排气装置，用于通过干蚀刻处理从其中正在蚀刻样品的处理室排出气体，用于引入从处理室排出的气体并将其转换成等离子体的等离子体装置，用于调节压力的压力调节装置在等离子体装置处的等离子体的发射线谱的检测装置，以及用于检测等离子体装置上的等离子体的发射谱线光谱的光谱检测装置，以及检测发射线的强度的变化随着时间的推移。

14. 发明授权

US5580420A Plasma generating method and apparatus and plasma processing method and apparatus 失效
标题翻译：等离子体发生方法及装置及等离子体处理方法及装置
公开(公告)号：US5580420A
公开(公告)日：1996-12-03
申请号：US307272
申请日：1994-09-16
申请人： Katsuya Watanabe , Tetsunori Kaji , Naoyuki Tamura , Kenji Nakata , Hiroyuki Shichida , Seiichi Watanabe , Sadayuki Okudaira , Keizo Suzuki
发明人： Katsuya Watanabe , Tetsunori Kaji , Naoyuki Tamura , Kenji Nakata , Hiroyuki Shichida , Seiichi Watanabe , Sadayuki Okudaira , Keizo Suzuki
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01J37/32238 , H01J37/32192 , H01J37/32247 , H01J37/32275 , H01J37/32678
摘要： A microwave penetrating window and a cavity which are substantially equal in diameter to a plasma generating chamber are successively connected to the plasma generating chamber and microwaves are introduced via the cavity into the plasma generating chamber. A processing gas in the plasma generating chamber is converted into a plasma by means of the microwaves introduced into the plasma generating chamber and the microwaves in specific modes are resonated in between a microwave reflective interface with the plasma generated in the plasma generating chamber and the reflective edge face of the cavity. The microwaves in the specific modes are thus formed in the cavity and the energy of the microwaves in the specific modes is increased by resonance. The boosted energy is added to the plasma and the plasma is densified accordingly. Moreover, a plasma excellent in uniformity and stability can be generated by resonating the microwaves in the specific modes in the presence of a uniform electromagnetic field.
摘要翻译：与等离子体发生室直径基本相等的微波穿透窗和空腔连续地连接到等离子体发生室，并且微波经由腔引入等离子体发生室。等离子体发生室中的处理气体通过引入到等离子体发生室中的微波转换为等离子体，并且特定模式中的微波共振在与等离子体发生室中产生的等离子体的微波反射界面和反射空腔的边缘面。因此，特定模式中的微波形成在空腔中，并且特定模式中的微波的能量通过共振增加。将升高的能量加入到等离子体中，并且等离子体相应地致密化。此外，通过在存在均匀电磁场的情况下在特定模式中谐振微波，可以产生均匀性和稳定性优异的等离子体。

15. 发明授权

US4101411A Plasma etching apparatus 失效
标题翻译：等离子刻蚀装置
公开(公告)号：US4101411A
公开(公告)日：1978-07-18
申请号：US787878
申请日：1977-04-15
申请人： Keizo Suzuki , Sadayuki Okudaira , Ichiro Kanomata , Noriyuki Sakudo
发明人： Keizo Suzuki , Sadayuki Okudaira , Ichiro Kanomata , Noriyuki Sakudo
IPC分类号： H01J37/32 , C23C15/00 , B01K1/00
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32238
摘要： In an apparatus wherein a microwave discharge is caused by introducing a discharge gas into a discharge area to which a microwave electric field is supplied by a microwave coupler and to which an external magnetic field is supplied by a magnetic field generator, whereby the surface of a substrate is etched by using ions in a generated plasma, a plasma etching apparatus is characterized by employing a round waveguide as the microwave coupler, the discharge area being formed within the round waveguide.
摘要翻译：在微波放电是通过将放电气体引入到由微波耦合器供给微波电场的放电区域中并且由磁场发生器供应外部磁场的情况下引起的微波放电的装置，由此，通过在产生的等离子体中使用离子蚀刻衬底，等离子体蚀刻装置的特征在于采用圆形波导作为微波耦合器，放电区域形成在圆形波导内。

16. 发明授权

US06767782B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06767782B2
公开(公告)日：2004-07-27
申请号：US10082311
申请日：2002-02-26
申请人： Takeshi Saikawa , Ryohei Maeno , Sadayuki Okudaira , Tetsuo Saito , Tsuyoshi Tamaru , Kazutoshi Ohmori
发明人： Takeshi Saikawa , Ryohei Maeno , Sadayuki Okudaira , Tetsuo Saito , Tsuyoshi Tamaru , Kazutoshi Ohmori
IPC分类号： H01L218238
CPC分类号： H01L21/76801 , H01L21/76819 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要： Charge-up damages to a substrate are reduced in a manufacturing process using plasma, and the reliability of a semiconductor device is improved. By forming an insulating film on the back of a substrate before a step of forming a first wiring layer, even if a plasma CVD method, a sputtering method, or a dry-etching method is used in a wiring-forming step executed later, then it is possible to suppress electric charges which are generated on the substrate and which flow to the ground potential through the substrate, and to prevent damages to the substrate due to charge-up.
摘要翻译：在使用等离子体的制造工艺中，对基板的充电损坏减少，并且提高了半导体器件的可靠性。通过在形成第一布线层的步骤之前在基板背面形成绝缘膜，即使在稍后执行的布线形成步骤中使用等离子体CVD法，溅射法或干蚀刻法，则可以抑制在基板上产生的电荷，并且通过基板流向接地电位，并防止由于充电而损坏基板。

17. 发明授权

US06309980B1 Semiconductor integrated circuit arrangement fabrication method 有权
标题翻译：半导体集成电路布置制造方法
公开(公告)号：US06309980B1
公开(公告)日：2001-10-30
申请号：US09564754
申请日：2000-05-04
申请人： Takafumi Tokunaga , Sadayuki Okudaira , Tatsumi Mizutani , Kazutami Tago , Hideyuki Kazumi , Ken Yoshioka
发明人： Takafumi Tokunaga , Sadayuki Okudaira , Tatsumi Mizutani , Kazutami Tago , Hideyuki Kazumi , Ken Yoshioka
IPC分类号： H01L2100
CPC分类号： H01L21/31116 , H01L21/76802
摘要： To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.
摘要翻译：为了在LSI的制造中以高选择率和高精度实现蚀刻，当通过使惰性气体激发成亚稳态来干法蚀刻半导体衬底上的薄膜时，反应气体的解离物质的组成被精确地控制状态在等离子体和氟里昂气体中彼此相互作用并选择性地获得期望的解离物种。

18. 发明授权

US4985114A Dry etching by alternately etching and depositing 失效
标题翻译：通过交替蚀刻和沉积干法蚀刻
公开(公告)号：US4985114A
公开(公告)日：1991-01-15
申请号：US418223
申请日：1989-10-06
申请人： Sadayuki Okudaira , Hiroshi Kawakami , Tokuo Kure , Kazunori Tsujimoto , Shinichi Tachi
发明人： Sadayuki Okudaira , Hiroshi Kawakami , Tokuo Kure , Kazunori Tsujimoto , Shinichi Tachi
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/32139 , H01L21/30655 , H01L21/3085 , H01L21/31144 , Y10S438/913
摘要： A dry etching method including the steps of introducing etching and deposition gases alternately into a reaction chamber at predetermined time intervals, etching the exposed surface of an article to be etched and applying deposition to the surface film thereof alternately by making plasma generated by applying power to the etching and deposition gases introduced into the reaction chamber come in contact with the article to be etched in the reaction chamber in order to etch the surface, is characterized in that the power is applied after the passage of predetermined time from the start of the introduction of the deposition gas and before the etching gas is introduced and cut off when the introduction of the etching gas is suspended.

19. 发明授权

US4992136A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US4992136A
公开(公告)日：1991-02-12
申请号：US223570
申请日：1988-07-25
申请人： Shinichi Tachi , Kazunori Tsujimoto , Sadayuki Okudaira
发明人： Shinichi Tachi , Kazunori Tsujimoto , Sadayuki Okudaira
IPC分类号： H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/32135 , H01L21/30621 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： An article to be etched is contacted with a plasma of a mixed gas containing an etching gas and a film forming gas or a surface modification gas at a low temperature to effect the dry etching of the article, whereby the selectivity of etching can be made very high and the inclination angle of the side wall of pattern can be controlled at a desired level.
摘要翻译：待蚀刻的制品在低温下与含有蚀刻气体和成膜气体或表面改性气体的混合气体的等离子体接触以实现制品的干蚀刻，从而可以非常地进行蚀刻的选择性可以将图案的侧壁的倾斜角度控制在期望的水平。

20. 发明授权

US4857137A Process for surface treatment 失效
标题翻译：表面处理工艺
公开(公告)号：US4857137A
公开(公告)日：1989-08-15
申请号：US9784
申请日：1987-02-02
申请人： Shinichi Tachi , Sadayuki Okudaira , Kazunori Tsujimoto , Kiichiro Mukai
发明人： Shinichi Tachi , Sadayuki Okudaira , Kazunori Tsujimoto , Kiichiro Mukai
IPC分类号： C23C14/22 , H01J37/02 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/316 , H01L21/3213
CPC分类号： H01L21/02019 , C23C14/221 , H01J37/026 , H01L21/02164 , H01L21/02263 , H01L21/02266 , H01L21/30621 , H01L21/3065 , H01L21/31116 , H01L21/31608 , H01L21/32136
摘要： An ion beam is allowed to hit the surface of a target and the resulting forward scattered particle beam is then allowed to hit the surface of a workpiece, thereby etching or modifying the surface of the workpiece or depositing a film on the surface of the workpiece. By bombardment of ions with the target, electric charges possessed by the ion beam are lost, and only the thus neutralized forward scattered particle beam is allowed to hit the surface of the workpiece, and thus the said surface treatment can be carried out without any electrically charging trouble.
摘要翻译：允许离子束撞击靶的表面，然后使得到的前向散射的粒子束撞击工件的表面，从而蚀刻或改变工件的表面或在工件的表面上沉积膜。通过用目标轰击离子，离子束所具有的电荷损失，只有这样被中和的前向散射的粒子束能够撞击到工件的表面，因此所述表面处理可以在没有任何电充电麻烦

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