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11. 发明授权

US08988324B2 Light emitting device and method of driving the light emitting device 有权
公开(公告)号：US08988324B2
公开(公告)日：2015-03-24
申请号：US14186600
申请日：2014-02-21
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Mitsuaki Osame , Aya Anzai , Yoshifumi Tanada , Keisuke Miyagawa , Satoshi Seo , Shunpei Yamazaki
IPC分类号： G09G3/30 , G09G3/32 , H01L33/00
CPC分类号： G09G3/32 , G09G3/3233 , G09G3/3258 , G09G3/3266 , G09G3/3291 , G09G2300/043 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2310/0256 , G09G2310/027 , G09G2310/061 , G09G2310/08 , G09G2320/043 , G09G2320/045 , H01L33/0041
摘要： A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.

12. 发明申请

US20140285410A1 Display Device 审中-公开
标题翻译：显示设备
公开(公告)号：US20140285410A1
公开(公告)日：2014-09-25
申请号：US14298292
申请日：2014-06-06
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yoshifumi Tanada
IPC分类号： G09G3/30
CPC分类号： H01L27/124 , G09G3/30 , G09G3/32 , G09G2300/0404 , G09G2300/0426 , G09G2300/0809 , G09G2320/0233 , G09G2320/0242 , G09G2330/02 , H01L27/15 , H01L27/156 , H01L27/3211 , H01L27/3262 , H01L27/3276 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A display device in which the current load of wirings are distributed and display variations due to voltage drop are suppressed. An active matrix display device of the invention comprises a first current input terminal, a second current input terminal, and a plurality of current supply lines extending parallel to each other. Each current supply line is connected to a plurality of driving transistors in a line. One end of each current supply line is connected to the first current input terminal via a first wiring intersecting with the current supply lines, and the other end thereof is connected to the second current input terminal via a second wiring intersecting with the current supply lines. Accordingly, a current is supplied to each current supply line from both the first and. the second current input terminals. The first and the second current input terminals are provided separately from each other.
摘要翻译：布线的电流负载分布的显示装置和由于电压降引起的显示变化被抑制。本发明的有源矩阵显示装置包括第一电流输入端子，第二电流输入端子以及彼此平行延伸的多个电流供给线路。每个电源线连接到一行中的多个驱动晶体管。每个电源线的一端经由与电流供给线相交的第一布线连接到第一电流输入端，并且其另一端经由与电流线相交的第二布线连接到第二电流输入端。因此，从第一和第二电流输入端子向每个电流供给线路提供电流。第一和第二电流输入端子彼此分开设置。

13. 发明申请

US20140159045A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20140159045A1
公开(公告)日：2014-06-12
申请号：US14180415
申请日：2014-02-14
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Munehiro Azami , Shou Nagao , Yoshifumi Tanada
IPC分类号： H01L29/786
CPC分类号： H01L29/786 , H03K19/01714 , H03K19/01721
摘要： There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source of a TFT (203) connected to an output node, and a circuit formed of TFTs (201) and (202) has a function to bring a node α into a floating state. When the node α is in the floating state, a potential of the node α is caused higher than VDD by using gate-source capacitance coupling of the TFT (203) through the capacitance (205), thus an output signal having an amplitude of VDD−GND can be normally obtained without causing amplitude attenuation due to the threshold value of the TFT.
摘要翻译：提供了一种半导体器件，其中可以通过仅使用一种导电类型的TFT构成电路并且可以正常获得输出信号的电压振幅来减小制造步骤。电容（205）设置在连接到输出节点的TFT（203）的栅极和源极之间，并且由TFT（201）和（202）形成的电路具有使节点α成为浮置状态的功能。当节点α处于浮置状态时，通过使用TFT（203）通过电容（205）的栅源电容耦合，使节点α的电位高于VDD，因此具有VDD的幅度的输出信号通常可以获得-GND，而不会由于TFT的阈值引起振幅衰减。

14. 发明授权

US11316478B2 Semiconductor device outputting reference voltage 有权
公开(公告)号：US11316478B2
公开(公告)日：2022-04-26
申请号：US16783306
申请日：2020-02-06
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kei Takahashi , Yoshifumi Tanada
IPC分类号： H03F1/02 , G05F1/46 , H03F3/45 , G05F1/56 , H03F1/34 , H02M3/156
摘要： Power consumption of a signal processing circuit is reduced. Further, power consumption of a semiconductor device including the signal processing circuit is reduced. The signal processing circuit includes a reference voltage generation circuit, a voltage divider circuit, an operational amplifier, a bias circuit for supplying bias current to the operational amplifier, and first and second holding circuits. The first holding circuit is connected between the reference voltage generation circuit and the bias circuit. The second holding circuit is connected between the voltage divider circuit and a non-inverting input terminal of the operational amplifier. Reference voltage from the reference voltage generation circuit and reference voltage from the voltage divider circuit can be held in the first and second holding circuits, respectively, so that the reference voltage generation circuit can stop operating. Thus, power consumption of the reference voltage generation circuit can be reduced.

15. 发明申请

US20220123097A1 Semiconductor Device and Method of Driving the Semiconductor Device 有权
公开(公告)号：US20220123097A1
公开(公告)日：2022-04-21
申请号：US17467616
申请日：2021-09-07
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hajime Kimura , Yoshifumi Tanada
IPC分类号： H01L27/32 , G09G3/3233 , G09G3/3266 , G09G3/3283 , G09G3/3291 , G09G3/20 , G09G3/30 , G09G3/36
摘要： Display irregularities in light emitting devices, which develop due to dispersions per pixel in the threshold value of TFTs for supplying electric current to light emitting elements, are obstacles to increasing the image quality of the light emitting devices. An electric potential in which the threshold voltage of a TFT (105) is either added to or subtracted from the electric potential of a reset signal line (110) is stored in capacitor means (108). A voltage, in which the corresponding threshold voltage is added to an image signal, is applied to a gate electrode of a TFT (106). TFTs within a pixel are disposed adjacently, and dispersion in the characteristics of the TFTs does not easily develop. The threshold value of to the TFT (105) is thus cancelled, even if the threshold values of the TFTs (106) differ per pixel, and a predetermined drain current can be supplied to an EL element (109).

16. 发明授权

US10355068B2 Semiconductor device and method of driving the semiconductor device 有权
公开(公告)号：US10355068B2
公开(公告)日：2019-07-16
申请号：US15262192
申请日：2016-09-12
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hajime Kimura , Yoshifumi Tanada
IPC分类号： H01L27/32 , G09G3/3233 , G09G3/3266 , G09G3/3283 , G09G3/3291 , G09G3/20 , G09G3/30 , G09G3/36 , G09G3/3258 , G09G3/3275
摘要： Display irregularities in light emitting devices, which develop due to dispersions per pixel in the threshold value of TFTs for supplying electric current to light emitting elements, are obstacles to increasing the image quality of the light emitting devices. An electric potential in which the threshold voltage of a TFT (105) is either added to or subtracted from the electric potential of a reset signal line (110) is stored in capacitor means (108). A voltage, in which the corresponding threshold voltage is added to an image signal, is applied to a gate electrode of a TFT (106). TFTs within a pixel are disposed adjacently, and dispersion in the characteristics of the TFTs does not easily develop. The threshold value of the TFT (105) is thus cancelled, even if the threshold values of the TFTs (106) differ per pixel, and a predetermined drain current can be supplied to an EL element (109).

17. 发明授权

US09859353B2 Semiconductor device 有权
公开(公告)号：US09859353B2
公开(公告)日：2018-01-02
申请号：US15074255
申请日：2016-03-18
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Masahiko Hayakawa , Yoshifumi Tanada , Mitsuaki Osame , Aya Anzai , Ryota Fukumoto
IPC分类号： H01L27/32 , H01L29/786 , G09G5/00 , G09G3/32 , H01L27/12 , G09G3/3233 , H01L27/02
CPC分类号： H01L27/3262 , G09G3/3233 , G09G2310/0251 , G09G2330/04 , H01L27/0248 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L27/3276 , H01L29/78675
摘要： Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

18. 发明授权

US09830853B2 Semiconductor device and driving method thereof 有权
公开(公告)号：US09830853B2
公开(公告)日：2017-11-28
申请号：US14957767
申请日：2015-12-03
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Hajime Kimura , Yoshifumi Tanada
IPC分类号： G09G5/10 , G09G3/3225 , G09G3/20 , G09G3/3266 , G09G3/3283 , G09G3/3291 , G09G3/3233
CPC分类号： G09G3/3225 , G09G3/2022 , G09G3/3233 , G09G3/3266 , G09G3/3283 , G09G3/3291 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2300/0866 , G09G2300/0876 , G09G2300/088 , G09G2310/027 , G09G2310/061 , G09G2320/0233
摘要： Brightness irregularities that develop in a light emitting device due to is persion among pixels in the threshold values of TFTs used for supplying electric current to light emitting devices become obstacles to improved image quality of the light emitting device. As an image signal input to a pixel from a source signal line, a desired electric potential is applied to a gate electrode of a TFT for supplying electric current to an EL device, through a TFT having its gate and drain connected to each other. A voltage equal to the TFT threshold value is produced between the source and the drain of the TFT 105. An electric potential in which the image signal is offset by the amount of the threshold value is therefore applied to the gate electrode of the TFT. Further, TFTs are disposed in close proximity to each other within the pixel, so that dispersions in the TFT characteristics do not easily develop. A desired drain current can thus be supplied to the EL device even if there is dispersion in the threshold values of the TFTs among pixels, because this is offset by the threshold value of the TFT.

19. 发明授权

US09812218B2 Pulse output circuit, shift register and display device 有权
公开(公告)号：US09812218B2
公开(公告)日：2017-11-07
申请号：US15343373
申请日：2016-11-04
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Munehiro Azami , Shou Nagao , Yoshifumi Tanada
IPC分类号： G11C19/28 , H01L27/12 , G02F1/133 , G09G3/36 , G02F1/1333
CPC分类号： G11C19/28 , G02F1/13306 , G02F1/1333 , G09G3/36 , G09G3/3688 , G09G2310/0286 , G09G2330/021 , H01L27/1214 , H01L27/124
摘要： A pulse is inputted to TFTs 101 and 104 so that the TFTs would turn ON and then potential of a node α rises. When the potential of the node α reaches (VDD−VthN), the node α became in a floating state. Accordingly, a TFT 105 then turns ON, and potential of an output node rises as a clock signal reaches the level H. On the other hand, potential of a gate electrode of the TFT 105 further rises due to an operation of capacitance 107 as the potential of the output node rises, so that the potential of the output node would be higher than (VDD+VthN). Thus, the potential of the output node rises to VDD without voltage drop caused by a threshold of the TFT 105.

20. 发明授权

US09742378B2 Pulse output circuit and semiconductor device 有权
公开(公告)号：US09742378B2
公开(公告)日：2017-08-22
申请号：US13922685
申请日：2013-06-20
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yoshifumi Tanada , Manabu Sato , Hiroyuki Miyake , Toshinari Sasaki , Kenichi Okazaki , Junichi Koezuka , Shunpei Yamazaki
IPC分类号： H03K3/01 , G11C19/28 , G09G3/36
CPC分类号： H03K3/01 , G09G3/3688 , G11C19/28
摘要： A highly reliable semiconductor device in which a shift in threshold voltage of a transistor due to deterioration can be inhibited is provided. A pulse output circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. A clock signal is supplied to a drain of the first transistor. A first power supply potential is applied to a source of the second transistor, and a drain of the second transistor is connected to the drain of the first transistor. A second power supply potential is applied to a drain of the third transistor. The first power supply potential is applied to a source of the fourth transistor, and a drain of the fourth transistor is connected to the drain of the third transistor. The first power supply potential is applied to a source of the fifth transistor, and a drain of the fifth transistor is connected to a gate of the third transistor. One of a source and a drain of the sixth transistor is connected to the drain of the first transistor, and the other of the source and the drain of the sixth transistor is connected to the gate of the third transistor. The first transistor and the third transistor include back gates connected to each other. The first to sixth transistors have the same conductivity type.

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