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11. 发明授权

US5848889A Semiconductor wafer support with graded thermal mass 失效
标题翻译：具有分级热质的半导体晶片支架
公开(公告)号：US5848889A
公开(公告)日：1998-12-15
申请号：US685493
申请日：1996-07-24
申请人： James V. Tietz , Benjamin Bierman , David S. Ballance
发明人： James V. Tietz , Benjamin Bierman , David S. Ballance
IPC分类号： H01L21/683 , H01L21/205 , H01L21/22 , H01L21/26 , H01L21/687 , F27D5/00
CPC分类号： H01L21/68735
摘要： An annular-shaped edge ring support for a semiconductor wafer has an innermost radial portion for supporting the semiconductor wafer and an outermost radial portion contiguous with the inner portion. The inner portion has a graded thermal mass that generally increases with increasing radius.
摘要翻译：用于半导体晶片的环形边缘环支撑件具有用于支撑半导体晶片的最内径向部分和与内部部分邻接的最外径部分。内部部分具有通常随着半径的增加而增加的分级热质量。

12. 发明授权

US5920797A Method for gaseous substrate support 失效
标题翻译：气体底物支撑方法
公开(公告)号：US5920797A
公开(公告)日：1999-07-06
申请号：US758699
申请日：1996-12-03
申请人： David S. Ballance , Benjamin Bierman , James V. Tietz , Brian Haas
发明人： David S. Ballance , Benjamin Bierman , James V. Tietz , Brian Haas
IPC分类号： H01L21/22 , H01L21/00 , H01L21/205 , H01L21/26 , H01L21/31 , H01L21/683
CPC分类号： H01L21/67115 , H01L21/6838 , Y10S438/909
摘要： A method of reducing stress on a substrate in a thermal processing chamber. The method includes the steps of supporting a first portion of a substrate by means of contacting the same such that a second portion of the substrate is not contacted, part of the second portion forming one wall of a cavity, and flowing a gas into the cavity such that the pressure of the gas exerts a force on the second portion to at least partially support the second portion.
摘要翻译：一种降低热处理室中的衬底上的应力的方法。该方法包括以下步骤：通过使基板的第一部分接触而支撑基板的第一部分，使得基板的第二部分不接触，形成空腔的一个壁的第二部分的一部分并将气体流入腔使得气体的压力在第二部分上施加力以至少部分地支撑第二部分。

13. 发明授权

US5884412A Method and apparatus for purging the back side of a substrate during chemical vapor processing 失效
标题翻译：用于在化学气相处理期间净化衬底的背面的方法和装置
公开(公告)号：US5884412A
公开(公告)日：1999-03-23
申请号：US687166
申请日：1996-07-24
申请人： James V. Tietz , Benjamin Bierman , David S. Ballance
发明人： James V. Tietz , Benjamin Bierman , David S. Ballance
IPC分类号： C23C16/44 , C23C16/455 , F26B11/18
CPC分类号： C23C16/45521 , C23C16/455
摘要： A method of processing a disk-shaped substrate, or wafer, during a chemical vapor process includes a backside purge of the substrate with a purge gas. The backside purge is obtained by spinning the substrate about a central axis, directing a flow of the purge gas over the backside of the spinning substrate, and causing the purge gas to flow in an outward radial direction with the spinning substrate. An apparatus in a vapor processing system structured for conducting the backside purge includes a support mechanism structured and arranged to support the substrate and spin the substrate about a central axis, and a conduit coupled to a source of purge gas, structured and arranged to direct a flow of the purge gas over a backside of the substrate while the substrate is spinning such that the spinning substrate causes the purge gas to flow radially outward.
摘要翻译：在化学蒸汽处理过程中处理盘形基板或晶片的方法包括用吹扫气体对基板进行背面吹扫。背面吹扫是通过围绕中心轴线旋转衬底而获得的，该吹扫气体引导吹扫气体流过纺丝衬底的背面，并使吹扫气体与旋转衬底沿向外径向流动。构造用于进行背面清洗的蒸气处理系统中的装置包括构造和布置成支撑基板并围绕中心轴线旋转基板的支撑机构，以及耦合到吹扫气体源的导管，其被构造和布置成引导当衬底旋转时，吹扫气体在衬底的背面上流动，使得纺丝衬底使吹扫气体径向向外流动。

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